KR101759273B1 - 광전자 반도체 칩 그리고 ＡｌＧａＮ을 기본으로 하는 중간층의 용도 - Google Patents

광전자 반도체 칩 그리고 ＡｌＧａＮ을 기본으로 하는 중간층의 용도 Download PDF

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KR101759273B1
KR101759273B1 KR1020127020129A KR20127020129A KR101759273B1 KR 101759273 B1 KR101759273 B1 KR 101759273B1 KR 1020127020129 A KR1020127020129 A KR 1020127020129A KR 20127020129 A KR20127020129 A KR 20127020129A KR 101759273 B1 KR101759273 B1 KR 101759273B1
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layer
semiconductor chip
doped
layer sequence
intermediate layer
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KR20120094528A (ko
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마티아스 페터
토비아스 마이어
니콜라우스 그마인비저
테츠야 타키
한스-외르겐 루가우어
알렉산더 발터
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오스람 옵토 세미컨덕터스 게엠베하
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping

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  • Led Devices (AREA)
KR1020127020129A 2009-12-30 2010-12-20 광전자 반도체 칩 그리고 ＡｌＧａＮ을 기본으로 하는 중간층의 용도 Active KR101759273B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009060749.8 2009-12-30
DE102009060749.8A DE102009060749B4 (de) 2009-12-30 2009-12-30 Optoelektronischer Halbleiterchip
PCT/EP2010/070274 WO2011080144A2 (de) 2009-12-30 2010-12-20 Optoelektronischer halbleiterchip und verwendung einer auf algan basierenden zwischenschicht

Publications (2)

Publication Number Publication Date
KR20120094528A KR20120094528A (ko) 2012-08-24
KR101759273B1 true KR101759273B1 (ko) 2017-07-18

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KR1020127020129A Active KR101759273B1 (ko) 2009-12-30 2010-12-20 광전자 반도체 칩 그리고 ＡｌＧａＮ을 기본으로 하는 중간층의 용도

Country Status (8)

Country Link
US (1) US8592840B2 (enExample)
EP (1) EP2519979B1 (enExample)
JP (1) JP2013516749A (enExample)
KR (1) KR101759273B1 (enExample)
CN (1) CN102687289B (enExample)
DE (1) DE102009060749B4 (enExample)
TW (1) TWI442600B (enExample)
WO (1) WO2011080144A2 (enExample)

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DE102009058796A1 (de) 2009-12-18 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
US9419182B2 (en) 2012-01-05 2016-08-16 Micron Technology, Inc. Solid-state radiation transducer devices having at least partially transparent buried-contact elements, and associated systems and methods
CN104412395B (zh) 2012-07-11 2018-07-17 亮锐控股有限公司 降低或者消除ⅲ-氮化物结构中的纳米管缺陷
DE102012111245A1 (de) * 2012-11-21 2014-05-22 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Anschlussbereichs eines optoelektronischen Halbleiterchips
DE102013104192A1 (de) 2013-04-25 2014-10-30 Osram Opto Semiconductors Gmbh Halbleiterbauelement mit einer Zwischenschicht
DE102018126936A1 (de) 2018-10-29 2020-04-30 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen
KR20230142017A (ko) * 2022-03-30 2023-10-11 삼성디스플레이 주식회사 발광 소자, 발광 소자의 제조 방법, 및 표시 장치

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JP2005191306A (ja) * 2003-12-25 2005-07-14 Nichia Chem Ind Ltd 窒化物半導体積層基板およびそれを用いた窒化物半導体デバイス、窒化物半導体レーザ素子
WO2009121319A1 (de) * 2008-03-31 2009-10-08 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip und verfahren zur herstellung eines solchen

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US6121638A (en) * 1995-09-12 2000-09-19 Kabushiki Kaisha Toshiba Multi-layer structured nitride-based semiconductor devices
US5903017A (en) * 1996-02-26 1999-05-11 Kabushiki Kaisha Toshiba Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN
AU747260B2 (en) 1997-07-25 2002-05-09 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JP4166885B2 (ja) 1998-05-18 2008-10-15 富士通株式会社 光半導体装置およびその製造方法
DE10042947A1 (de) 2000-08-31 2002-03-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
US6504183B1 (en) 2000-09-08 2003-01-07 United Epitaxy Company Epitaxial growth of nitride semiconductor device
DE10056475B4 (de) * 2000-11-15 2010-10-07 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis mit verbesserter p-Leitfähigkeit und Verfahren zu dessen Herstellung
US6828596B2 (en) * 2002-06-13 2004-12-07 Lumileds Lighting U.S., Llc Contacting scheme for large and small area semiconductor light emitting flip chip devices
KR100580623B1 (ko) * 2003-08-04 2006-05-16 삼성전자주식회사 초격자 구조의 반도체층을 갖는 반도체 소자 및 그 제조방법
TWI309894B (en) * 2003-10-14 2009-05-11 Showa Denko Kk Group-iii nitride semiconductor luminescent doide
DE102005003460A1 (de) 2004-01-26 2005-10-13 Osram Opto Semiconductors Gmbh Dünnfilm-LED mit einer Stromaufweitungsstruktur
CN100411209C (zh) 2004-01-26 2008-08-13 奥斯兰姆奥普托半导体有限责任公司 具有电流扩展结构的薄膜led
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JP2007201195A (ja) 2006-01-26 2007-08-09 Sumitomo Electric Ind Ltd 窒化物半導体発光素子
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KR101055090B1 (ko) * 2009-03-02 2011-08-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법

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JP2000353821A (ja) * 1999-06-10 2000-12-19 Pioneer Electronic Corp 窒化物半導体素子の製造方法及びかかる方法により製造された素子
JP2005191306A (ja) * 2003-12-25 2005-07-14 Nichia Chem Ind Ltd 窒化物半導体積層基板およびそれを用いた窒化物半導体デバイス、窒化物半導体レーザ素子
WO2009121319A1 (de) * 2008-03-31 2009-10-08 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip und verfahren zur herstellung eines solchen

Also Published As

Publication number Publication date
TWI442600B (zh) 2014-06-21
JP2013516749A (ja) 2013-05-13
WO2011080144A3 (de) 2011-12-22
WO2011080144A2 (de) 2011-07-07
TW201135976A (en) 2011-10-16
DE102009060749B4 (de) 2021-12-30
EP2519979A2 (de) 2012-11-07
EP2519979B1 (de) 2019-12-18
US8592840B2 (en) 2013-11-26
DE102009060749A1 (de) 2011-07-07
US20120313138A1 (en) 2012-12-13
KR20120094528A (ko) 2012-08-24
CN102687289B (zh) 2016-08-03
CN102687289A (zh) 2012-09-19

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