JP2013516749A - オプトエレクトロニクス半導体チップおよびＡｌＧａＮをベースとする中間層の使用 - Google Patents

オプトエレクトロニクス半導体チップおよびＡｌＧａＮをベースとする中間層の使用 Download PDF

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Publication number
JP2013516749A
JP2013516749A JP2012546412A JP2012546412A JP2013516749A JP 2013516749 A JP2013516749 A JP 2013516749A JP 2012546412 A JP2012546412 A JP 2012546412A JP 2012546412 A JP2012546412 A JP 2012546412A JP 2013516749 A JP2013516749 A JP 2013516749A
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Prior art keywords
intermediate layer
layer
semiconductor chip
hole
optoelectronic semiconductor
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Pending
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JP2012546412A
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Japanese (ja)
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JP2013516749A5 (enExample
Inventor
マティアス ペーター
トビアス マイヤー
ニコラウス グマインワイザー
瀧　　哲也
ハンス−ユルゲン ルガウアー
アレキサンダー ワルター
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of JP2013516749A publication Critical patent/JP2013516749A/ja
Publication of JP2013516749A5 publication Critical patent/JP2013516749A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
JP2012546412A 2009-12-30 2010-12-20 オプトエレクトロニクス半導体チップおよびＡｌＧａＮをベースとする中間層の使用 Pending JP2013516749A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009060749.8 2009-12-30
DE102009060749.8A DE102009060749B4 (de) 2009-12-30 2009-12-30 Optoelektronischer Halbleiterchip
PCT/EP2010/070274 WO2011080144A2 (de) 2009-12-30 2010-12-20 Optoelektronischer halbleiterchip und verwendung einer auf algan basierenden zwischenschicht

Publications (2)

Publication Number Publication Date
JP2013516749A true JP2013516749A (ja) 2013-05-13
JP2013516749A5 JP2013516749A5 (enExample) 2013-10-10

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Family Applications (1)

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JP2012546412A Pending JP2013516749A (ja) 2009-12-30 2010-12-20 オプトエレクトロニクス半導体チップおよびＡｌＧａＮをベースとする中間層の使用

Country Status (8)

Country Link
US (1) US8592840B2 (enExample)
EP (1) EP2519979B1 (enExample)
JP (1) JP2013516749A (enExample)
KR (1) KR101759273B1 (enExample)
CN (1) CN102687289B (enExample)
DE (1) DE102009060749B4 (enExample)
TW (1) TWI442600B (enExample)
WO (1) WO2011080144A2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009058796A1 (de) 2009-12-18 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
US9419182B2 (en) 2012-01-05 2016-08-16 Micron Technology, Inc. Solid-state radiation transducer devices having at least partially transparent buried-contact elements, and associated systems and methods
CN108615725A (zh) 2012-07-11 2018-10-02 亮锐控股有限公司 降低或者消除ⅲ-氮化物结构中的纳米管缺陷
DE102012111245A1 (de) * 2012-11-21 2014-05-22 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Anschlussbereichs eines optoelektronischen Halbleiterchips
DE102013104192A1 (de) 2013-04-25 2014-10-30 Osram Opto Semiconductors Gmbh Halbleiterbauelement mit einer Zwischenschicht
DE102018126936A1 (de) * 2018-10-29 2020-04-30 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000353821A (ja) * 1999-06-10 2000-12-19 Pioneer Electronic Corp 窒化物半導体素子の製造方法及びかかる方法により製造された素子
JP2005191306A (ja) * 2003-12-25 2005-07-14 Nichia Chem Ind Ltd 窒化物半導体積層基板およびそれを用いた窒化物半導体デバイス、窒化物半導体レーザ素子

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US6121638A (en) * 1995-09-12 2000-09-19 Kabushiki Kaisha Toshiba Multi-layer structured nitride-based semiconductor devices
US5903017A (en) * 1996-02-26 1999-05-11 Kabushiki Kaisha Toshiba Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN
DE69835216T2 (de) * 1997-07-25 2007-05-31 Nichia Corp., Anan Halbleitervorrichtung aus einer nitridverbindung
JP4166885B2 (ja) * 1998-05-18 2008-10-15 富士通株式会社 光半導体装置およびその製造方法
DE10042947A1 (de) * 2000-08-31 2002-03-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
US6504183B1 (en) 2000-09-08 2003-01-07 United Epitaxy Company Epitaxial growth of nitride semiconductor device
DE10056475B4 (de) * 2000-11-15 2010-10-07 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis mit verbesserter p-Leitfähigkeit und Verfahren zu dessen Herstellung
US6828596B2 (en) * 2002-06-13 2004-12-07 Lumileds Lighting U.S., Llc Contacting scheme for large and small area semiconductor light emitting flip chip devices
KR100580623B1 (ko) * 2003-08-04 2006-05-16 삼성전자주식회사 초격자 구조의 반도체층을 갖는 반도체 소자 및 그 제조방법
WO2005036658A1 (en) * 2003-10-14 2005-04-21 Showa Denko K.K. Group-iii nitride semiconductor device
KR101386192B1 (ko) 2004-01-26 2014-04-17 오스람 옵토 세미컨덕터스 게엠베하 전류 분산 구조물을 갖는 박막 ｌｅｄ
DE102005003460A1 (de) * 2004-01-26 2005-10-13 Osram Opto Semiconductors Gmbh Dünnfilm-LED mit einer Stromaufweitungsstruktur
WO2005106972A1 (de) * 2004-04-29 2005-11-10 Osram Opto Semiconductors Gmbh Verfahren zum herstellen eines strahlungsemittierenden halbleiterchips
JP2007201195A (ja) 2006-01-26 2007-08-09 Sumitomo Electric Ind Ltd 窒化物半導体発光素子
JPWO2007129773A1 (ja) 2006-05-10 2009-09-17 昭和電工株式会社 Ｉｉｉ族窒化物化合物半導体積層構造体
EP1883141B1 (de) 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht
DE102006046237A1 (de) * 2006-07-27 2008-01-31 Osram Opto Semiconductors Gmbh Halbleiter-Schichtstruktur mit Übergitter
DE102007046027A1 (de) 2007-09-26 2009-04-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip mit einer Mehrfachquantentopfstruktur
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
DE102007057241A1 (de) 2007-11-28 2009-06-04 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Schichtenstapels auf einem kristallinen Substrat und Anordnung umfassend einen auf einem Substrat angeordneten Schichtenstapel
DE102008011848A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
DE102008032318A1 (de) 2008-03-31 2009-10-01 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines solchen
KR101055090B1 (ko) * 2009-03-02 2011-08-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000353821A (ja) * 1999-06-10 2000-12-19 Pioneer Electronic Corp 窒化物半導体素子の製造方法及びかかる方法により製造された素子
JP2005191306A (ja) * 2003-12-25 2005-07-14 Nichia Chem Ind Ltd 窒化物半導体積層基板およびそれを用いた窒化物半導体デバイス、窒化物半導体レーザ素子

Also Published As

Publication number Publication date
EP2519979B1 (de) 2019-12-18
KR101759273B1 (ko) 2017-07-18
CN102687289A (zh) 2012-09-19
US8592840B2 (en) 2013-11-26
US20120313138A1 (en) 2012-12-13
DE102009060749A1 (de) 2011-07-07
EP2519979A2 (de) 2012-11-07
CN102687289B (zh) 2016-08-03
WO2011080144A2 (de) 2011-07-07
KR20120094528A (ko) 2012-08-24
TWI442600B (zh) 2014-06-21
WO2011080144A3 (de) 2011-12-22
TW201135976A (en) 2011-10-16
DE102009060749B4 (de) 2021-12-30

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