TWI437236B - The method of modifying the probe device and the contact position - Google Patents

The method of modifying the probe device and the contact position Download PDF

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Publication number
TWI437236B
TWI437236B TW098116016A TW98116016A TWI437236B TW I437236 B TWI437236 B TW I437236B TW 098116016 A TW098116016 A TW 098116016A TW 98116016 A TW98116016 A TW 98116016A TW I437236 B TWI437236 B TW I437236B
Authority
TW
Taiwan
Prior art keywords
distance
mounting table
overdrive amount
probe
inspected
Prior art date
Application number
TW098116016A
Other languages
English (en)
Chinese (zh)
Other versions
TW201007172A (en
Inventor
Hiroshi Yamada
Tomoya Endo
Shinya Koizumi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201007172A publication Critical patent/TW201007172A/zh
Application granted granted Critical
Publication of TWI437236B publication Critical patent/TWI437236B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2891—Features relating to contacting the IC under test, e.g. probe heads; chucks related to sensing or controlling of force, position, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Measuring Leads Or Probes (AREA)
TW098116016A 2008-05-15 2009-05-14 The method of modifying the probe device and the contact position TWI437236B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008128145A JP2009276215A (ja) 2008-05-15 2008-05-15 プローブ装置及びコンタクト位置の補正方法

Publications (2)

Publication Number Publication Date
TW201007172A TW201007172A (en) 2010-02-16
TWI437236B true TWI437236B (zh) 2014-05-11

Family

ID=41315591

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098116016A TWI437236B (zh) 2008-05-15 2009-05-14 The method of modifying the probe device and the contact position

Country Status (5)

Country Link
US (3) US8130004B2 (enExample)
JP (1) JP2009276215A (enExample)
KR (1) KR101059603B1 (enExample)
CN (1) CN101581733B (enExample)
TW (1) TWI437236B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11656181B2 (en) 2018-12-21 2023-05-23 Industrial Technology Research Institute Inspection apparatus and inspection method for inspecting light-emitting diodes

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JP5308948B2 (ja) * 2009-07-23 2013-10-09 ルネサスエレクトロニクス株式会社 半導体デバイスの検査装置及び方法
KR101083346B1 (ko) * 2010-12-09 2011-11-15 주식회사 이노비즈 엘이디 칩 검사장치
JP5687172B2 (ja) * 2011-11-01 2015-03-18 三菱電機株式会社 半導体テスト治具およびそれを用いた耐圧測定方法
JP5993649B2 (ja) * 2012-07-31 2016-09-14 東京エレクトロン株式会社 プローブカードへの基板当接装置、基板当接装置を備えた基板検査装置、及びプローブカードへの基板当接方法
JP6031292B2 (ja) 2012-07-31 2016-11-24 東京エレクトロン株式会社 プローブカードへの基板当接方法
CN104793118B (zh) * 2014-01-17 2017-11-03 中芯国际集成电路制造(上海)有限公司 设定测试针压的方法
CN103792483B (zh) * 2014-01-24 2016-04-06 苏州高新区世纪福科技有限公司 手机pcb板测试装置
US10281518B2 (en) * 2014-02-25 2019-05-07 Formfactor Beaverton, Inc. Systems and methods for on-wafer dynamic testing of electronic devices
JP6423660B2 (ja) * 2014-09-09 2018-11-14 東京エレクトロン株式会社 ウエハ検査装置における検査用圧力設定値決定方法
KR102396428B1 (ko) 2014-11-11 2022-05-11 삼성전자주식회사 반도체 테스트 장치 및 방법
CN104459230A (zh) * 2014-11-26 2015-03-25 上海华力微电子有限公司 一种探针保护装置
JP6890921B2 (ja) * 2015-10-21 2021-06-18 株式会社日本マイクロニクス プローブカード及び接触検査装置
US10372121B2 (en) * 2016-04-26 2019-08-06 Ford Global Technologies, Llc Determination of continuous user interaction and intent through measurement of force variability
DE112016007382T5 (de) * 2016-10-26 2019-09-26 Mitsubishi Electric Corporation Inspektionsvorrichtung und Inspektionsverfahren
JP6745197B2 (ja) * 2016-11-04 2020-08-26 浜松ホトニクス株式会社 超音波検査装置及び超音波検査方法
US10509071B2 (en) * 2016-11-18 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for aligning probe card in semiconductor device testing
KR102654604B1 (ko) * 2016-11-22 2024-04-03 세메스 주식회사 프로브 스테이션
US10388579B2 (en) * 2017-09-21 2019-08-20 Texas Instruments Incorporated Multi-plate semiconductor wafer testing systems
JP7160051B6 (ja) * 2017-12-28 2022-11-11 日本電産リード株式会社 検査装置及び検査方法
CN111239448B (zh) * 2018-11-28 2024-05-03 长鑫存储技术有限公司 测试机以及用于校准探针卡与待测器件的方法
WO2020108352A1 (en) * 2018-11-28 2020-06-04 Changxin Memory Technologies, Inc. Tester and method for calibrating probe card and device under testing (dut)
CN109633273B (zh) * 2018-11-30 2021-06-04 上海无线电设备研究所 一种用于开孔式负载阻抗测试系统及其方法
CN110187255B (zh) * 2019-04-15 2021-10-15 上海华力集成电路制造有限公司 一种建立探针测试程式时确定过驱动量的方法
CN110045269A (zh) * 2019-05-09 2019-07-23 肇庆学院 一种芯片测试装置及方法
JP7374682B2 (ja) * 2019-09-17 2023-11-07 株式会社国際電気セミコンダクターサービス 抵抗率測定器、半導体装置の製造方法および抵抗率測定方法
JP7421990B2 (ja) * 2020-04-08 2024-01-25 株式会社日本マイクロニクス 電気的接続装置および検査方法
US20240094261A1 (en) * 2020-08-12 2024-03-21 Microfabrica Inc. Probe Arrays and Improved Methods for Making and Using Longitudinal Deformation of Probe Preforms
KR102721104B1 (ko) * 2020-09-22 2024-10-23 세메스 주식회사 프로브 스테이션
KR20240116931A (ko) * 2021-12-08 2024-07-30 도쿄엘렉트론가부시키가이샤 검사 방법, 보정량 산출 방법 및 검사 장치

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JP3208734B2 (ja) * 1990-08-20 2001-09-17 東京エレクトロン株式会社 プローブ装置
US7382142B2 (en) * 2000-05-23 2008-06-03 Nanonexus, Inc. High density interconnect system having rapid fabrication cycle
JP2002313857A (ja) * 2001-04-12 2002-10-25 Ando Electric Co Ltd 距離変化出力装置及び方法
JP4782953B2 (ja) 2001-08-06 2011-09-28 東京エレクトロン株式会社 プローブカード特性測定装置、プローブ装置及びプローブ方法
JP2003168707A (ja) 2001-11-30 2003-06-13 Tokyo Electron Ltd プローブ装置
JP2004265895A (ja) 2003-01-20 2004-09-24 Tokyo Electron Ltd 光学的測長器を備えたプローブ装置及びプローブ検査方法
JP4246010B2 (ja) 2003-07-30 2009-04-02 東京エレクトロン株式会社 検査装置
JP2006186130A (ja) 2004-12-28 2006-07-13 Matsushita Electric Ind Co Ltd 半導体検査装置
JP4817830B2 (ja) * 2005-12-14 2011-11-16 株式会社東京精密 プローバ、プローブ接触方法及びそのためのプログラム
JP2007183193A (ja) * 2006-01-10 2007-07-19 Micronics Japan Co Ltd プロービング装置
JP2007218850A (ja) * 2006-02-20 2007-08-30 Sumitomo Electric Ind Ltd プローブピン、プローブカード、検査装置および検査装置の制御方法
JP2008028103A (ja) 2006-07-20 2008-02-07 Fujifilm Corp ウエハプローバ
JP2008243861A (ja) 2007-03-23 2008-10-09 Tokyo Electron Ltd 検査装置及び検査方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11656181B2 (en) 2018-12-21 2023-05-23 Industrial Technology Research Institute Inspection apparatus and inspection method for inspecting light-emitting diodes

Also Published As

Publication number Publication date
TW201007172A (en) 2010-02-16
CN101581733B (zh) 2011-12-21
US8130004B2 (en) 2012-03-06
US20120119766A1 (en) 2012-05-17
US20120126841A1 (en) 2012-05-24
CN101581733A (zh) 2009-11-18
KR101059603B1 (ko) 2011-08-25
JP2009276215A (ja) 2009-11-26
KR20090119715A (ko) 2009-11-19
US20090284277A1 (en) 2009-11-19

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