KR101059603B1 - 프로브 장치 및 콘택트 위치의 보정 방법 - Google Patents

프로브 장치 및 콘택트 위치의 보정 방법 Download PDF

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KR101059603B1
KR101059603B1 KR1020090041659A KR20090041659A KR101059603B1 KR 101059603 B1 KR101059603 B1 KR 101059603B1 KR 1020090041659 A KR1020090041659 A KR 1020090041659A KR 20090041659 A KR20090041659 A KR 20090041659A KR 101059603 B1 KR101059603 B1 KR 101059603B1
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South Korea
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distance
probe card
probe
measuring
overdrive amount
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Korean (ko)
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KR20090119715A (ko
Inventor
히로시 야마다
도모야 엔도
신야 고이즈미
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도쿄엘렉트론가부시키가이샤
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Publication of KR20090119715A publication Critical patent/KR20090119715A/ko
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2891—Features relating to contacting the IC under test, e.g. probe heads; chucks related to sensing or controlling of force, position, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
  • Tests Of Electronic Circuits (AREA)
KR1020090041659A 2008-05-15 2009-05-13 프로브 장치 및 콘택트 위치의 보정 방법 Active KR101059603B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008128145A JP2009276215A (ja) 2008-05-15 2008-05-15 プローブ装置及びコンタクト位置の補正方法
JPJP-P-2008-128145 2008-05-15

Publications (2)

Publication Number Publication Date
KR20090119715A KR20090119715A (ko) 2009-11-19
KR101059603B1 true KR101059603B1 (ko) 2011-08-25

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Application Number Title Priority Date Filing Date
KR1020090041659A Active KR101059603B1 (ko) 2008-05-15 2009-05-13 프로브 장치 및 콘택트 위치의 보정 방법

Country Status (5)

Country Link
US (3) US8130004B2 (enExample)
JP (1) JP2009276215A (enExample)
KR (1) KR101059603B1 (enExample)
CN (1) CN101581733B (enExample)
TW (1) TWI437236B (enExample)

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JP5308948B2 (ja) * 2009-07-23 2013-10-09 ルネサスエレクトロニクス株式会社 半導体デバイスの検査装置及び方法
KR101083346B1 (ko) * 2010-12-09 2011-11-15 주식회사 이노비즈 엘이디 칩 검사장치
JP5687172B2 (ja) * 2011-11-01 2015-03-18 三菱電機株式会社 半導体テスト治具およびそれを用いた耐圧測定方法
JP6031292B2 (ja) * 2012-07-31 2016-11-24 東京エレクトロン株式会社 プローブカードへの基板当接方法
JP5993649B2 (ja) * 2012-07-31 2016-09-14 東京エレクトロン株式会社 プローブカードへの基板当接装置、基板当接装置を備えた基板検査装置、及びプローブカードへの基板当接方法
CN104793118B (zh) * 2014-01-17 2017-11-03 中芯国际集成电路制造(上海)有限公司 设定测试针压的方法
CN103792483B (zh) * 2014-01-24 2016-04-06 苏州高新区世纪福科技有限公司 手机pcb板测试装置
US10281518B2 (en) * 2014-02-25 2019-05-07 Formfactor Beaverton, Inc. Systems and methods for on-wafer dynamic testing of electronic devices
JP6423660B2 (ja) * 2014-09-09 2018-11-14 東京エレクトロン株式会社 ウエハ検査装置における検査用圧力設定値決定方法
KR102396428B1 (ko) 2014-11-11 2022-05-11 삼성전자주식회사 반도체 테스트 장치 및 방법
CN104459230A (zh) * 2014-11-26 2015-03-25 上海华力微电子有限公司 一种探针保护装置
JP6890921B2 (ja) * 2015-10-21 2021-06-18 株式会社日本マイクロニクス プローブカード及び接触検査装置
US10372121B2 (en) * 2016-04-26 2019-08-06 Ford Global Technologies, Llc Determination of continuous user interaction and intent through measurement of force variability
DE112016007382T5 (de) * 2016-10-26 2019-09-26 Mitsubishi Electric Corporation Inspektionsvorrichtung und Inspektionsverfahren
JP6745197B2 (ja) * 2016-11-04 2020-08-26 浜松ホトニクス株式会社 超音波検査装置及び超音波検査方法
US10509071B2 (en) * 2016-11-18 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for aligning probe card in semiconductor device testing
KR102654604B1 (ko) * 2016-11-22 2024-04-03 세메스 주식회사 프로브 스테이션
US10388579B2 (en) * 2017-09-21 2019-08-20 Texas Instruments Incorporated Multi-plate semiconductor wafer testing systems
WO2019130952A1 (ja) * 2017-12-28 2019-07-04 日本電産リード株式会社 検査装置及び検査方法
CN111239448B (zh) * 2018-11-28 2024-05-03 长鑫存储技术有限公司 测试机以及用于校准探针卡与待测器件的方法
WO2020108352A1 (en) * 2018-11-28 2020-06-04 Changxin Memory Technologies, Inc. Tester and method for calibrating probe card and device under testing (dut)
CN109633273B (zh) * 2018-11-30 2021-06-04 上海无线电设备研究所 一种用于开孔式负载阻抗测试系统及其方法
US11656181B2 (en) 2018-12-21 2023-05-23 Industrial Technology Research Institute Inspection apparatus and inspection method for inspecting light-emitting diodes
CN110187255B (zh) * 2019-04-15 2021-10-15 上海华力集成电路制造有限公司 一种建立探针测试程式时确定过驱动量的方法
CN110045269A (zh) * 2019-05-09 2019-07-23 肇庆学院 一种芯片测试装置及方法
JP7374682B2 (ja) * 2019-09-17 2023-11-07 株式会社国際電気セミコンダクターサービス 抵抗率測定器、半導体装置の製造方法および抵抗率測定方法
JP7421990B2 (ja) * 2020-04-08 2024-01-25 株式会社日本マイクロニクス 電気的接続装置および検査方法
US20240094261A1 (en) * 2020-08-12 2024-03-21 Microfabrica Inc. Probe Arrays and Improved Methods for Making and Using Longitudinal Deformation of Probe Preforms
KR102721104B1 (ko) * 2020-09-22 2024-10-23 세메스 주식회사 프로브 스테이션
WO2023106150A1 (ja) * 2021-12-08 2023-06-15 東京エレクトロン株式会社 検査方法、補正量算出方法および検査装置

Citations (3)

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JP2004265895A (ja) 2003-01-20 2004-09-24 Tokyo Electron Ltd 光学的測長器を備えたプローブ装置及びプローブ検査方法
JP2006186130A (ja) 2004-12-28 2006-07-13 Matsushita Electric Ind Co Ltd 半導体検査装置
JP2008028103A (ja) 2006-07-20 2008-02-07 Fujifilm Corp ウエハプローバ

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JP3208734B2 (ja) * 1990-08-20 2001-09-17 東京エレクトロン株式会社 プローブ装置
US7382142B2 (en) * 2000-05-23 2008-06-03 Nanonexus, Inc. High density interconnect system having rapid fabrication cycle
JP2002313857A (ja) * 2001-04-12 2002-10-25 Ando Electric Co Ltd 距離変化出力装置及び方法
JP4782953B2 (ja) 2001-08-06 2011-09-28 東京エレクトロン株式会社 プローブカード特性測定装置、プローブ装置及びプローブ方法
JP2003168707A (ja) 2001-11-30 2003-06-13 Tokyo Electron Ltd プローブ装置
JP4246010B2 (ja) 2003-07-30 2009-04-02 東京エレクトロン株式会社 検査装置
JP4817830B2 (ja) * 2005-12-14 2011-11-16 株式会社東京精密 プローバ、プローブ接触方法及びそのためのプログラム
JP2007183193A (ja) * 2006-01-10 2007-07-19 Micronics Japan Co Ltd プロービング装置
JP2007218850A (ja) * 2006-02-20 2007-08-30 Sumitomo Electric Ind Ltd プローブピン、プローブカード、検査装置および検査装置の制御方法
JP2008243861A (ja) 2007-03-23 2008-10-09 Tokyo Electron Ltd 検査装置及び検査方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004265895A (ja) 2003-01-20 2004-09-24 Tokyo Electron Ltd 光学的測長器を備えたプローブ装置及びプローブ検査方法
JP2006186130A (ja) 2004-12-28 2006-07-13 Matsushita Electric Ind Co Ltd 半導体検査装置
JP2008028103A (ja) 2006-07-20 2008-02-07 Fujifilm Corp ウエハプローバ

Also Published As

Publication number Publication date
CN101581733A (zh) 2009-11-18
US20120126841A1 (en) 2012-05-24
US20090284277A1 (en) 2009-11-19
TW201007172A (en) 2010-02-16
US20120119766A1 (en) 2012-05-17
US8130004B2 (en) 2012-03-06
TWI437236B (zh) 2014-05-11
KR20090119715A (ko) 2009-11-19
JP2009276215A (ja) 2009-11-26
CN101581733B (zh) 2011-12-21

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