TWI435374B - 複合氮化物半導體結構的磊晶成長 - Google Patents
複合氮化物半導體結構的磊晶成長 Download PDFInfo
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- TWI435374B TWI435374B TW096113129A TW96113129A TWI435374B TW I435374 B TWI435374 B TW I435374B TW 096113129 A TW096113129 A TW 096113129A TW 96113129 A TW96113129 A TW 96113129A TW I435374 B TWI435374 B TW I435374B
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- Prior art keywords
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- 239000004065 semiconductor Substances 0.000 title claims description 14
- -1 compound nitride Chemical class 0.000 title description 2
- 238000012545 processing Methods 0.000 claims description 254
- 238000000034 method Methods 0.000 claims description 214
- 230000008569 process Effects 0.000 claims description 158
- 239000002243 precursor Substances 0.000 claims description 126
- 239000007789 gas Substances 0.000 claims description 114
- 239000000758 substrate Substances 0.000 claims description 95
- 238000000151 deposition Methods 0.000 claims description 64
- 229910002601 GaN Inorganic materials 0.000 claims description 57
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 54
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 36
- 230000008021 deposition Effects 0.000 claims description 30
- 229910052733 gallium Inorganic materials 0.000 claims description 27
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 24
- 238000004140 cleaning Methods 0.000 claims description 23
- 150000004767 nitrides Chemical class 0.000 claims description 23
- 230000007704 transition Effects 0.000 claims description 20
- 238000005229 chemical vapour deposition Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- 239000012298 atmosphere Substances 0.000 claims description 16
- 239000012159 carrier gas Substances 0.000 claims description 16
- 229910052738 indium Inorganic materials 0.000 claims description 16
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 229910002704 AlGaN Inorganic materials 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 238000012546 transfer Methods 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 229910021478 group 5 element Inorganic materials 0.000 claims description 9
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 8
- 239000000460 chlorine Substances 0.000 claims description 8
- 229910052801 chlorine Inorganic materials 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 6
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 230000009347 mechanical transmission Effects 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims 5
- 238000004320 controlled atmosphere Methods 0.000 claims 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 3
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 claims 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 16
- 239000007788 liquid Substances 0.000 description 12
- 238000007726 management method Methods 0.000 description 12
- 238000009826 distribution Methods 0.000 description 11
- 239000002131 composite material Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000002156 mixing Methods 0.000 description 7
- 238000012544 monitoring process Methods 0.000 description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 6
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 241001422033 Thestylus Species 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000004590 computer program Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 230000004941 influx Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000012705 liquid precursor Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000010977 unit operation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/404,516 US20070240631A1 (en) | 2006-04-14 | 2006-04-14 | Epitaxial growth of compound nitride semiconductor structures |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200807504A TW200807504A (en) | 2008-02-01 |
| TWI435374B true TWI435374B (zh) | 2014-04-21 |
Family
ID=38481932
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096113129A TWI435374B (zh) | 2006-04-14 | 2007-04-13 | 複合氮化物半導體結構的磊晶成長 |
| TW100104449A TWI446412B (zh) | 2006-04-14 | 2007-04-13 | 複合氮化物半導體結構的磊晶成長 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100104449A TWI446412B (zh) | 2006-04-14 | 2007-04-13 | 複合氮化物半導體結構的磊晶成長 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US20070240631A1 (enExample) |
| EP (1) | EP2008297A1 (enExample) |
| JP (2) | JP2009533879A (enExample) |
| KR (2) | KR101338230B1 (enExample) |
| CN (2) | CN101317247B (enExample) |
| TW (2) | TWI435374B (enExample) |
| WO (1) | WO2007121270A1 (enExample) |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070240631A1 (en) * | 2006-04-14 | 2007-10-18 | Applied Materials, Inc. | Epitaxial growth of compound nitride semiconductor structures |
| US20070254093A1 (en) * | 2006-04-26 | 2007-11-01 | Applied Materials, Inc. | MOCVD reactor with concentration-monitor feedback |
| US20070254100A1 (en) * | 2006-04-26 | 2007-11-01 | Applied Materials, Inc. | MOCVD reactor without metalorganic-source temperature control |
| US7374960B1 (en) * | 2006-08-23 | 2008-05-20 | Applied Materials, Inc. | Stress measurement and stress balance in films |
| JP4312805B2 (ja) * | 2007-03-27 | 2009-08-12 | Ｏｋｉセミコンダクタ株式会社 | 半導体製造装置とそれを用いた半導体ウェハの製造方法およびそのプログラムを記録した記録媒体 |
| US20090095222A1 (en) * | 2007-10-16 | 2009-04-16 | Alexander Tam | Multi-gas spiral channel showerhead |
| US20090095221A1 (en) * | 2007-10-16 | 2009-04-16 | Alexander Tam | Multi-gas concentric injection showerhead |
| US7976631B2 (en) * | 2007-10-16 | 2011-07-12 | Applied Materials, Inc. | Multi-gas straight channel showerhead |
| US20090194026A1 (en) * | 2008-01-31 | 2009-08-06 | Burrows Brian H | Processing system for fabricating compound nitride semiconductor devices |
| US20090194024A1 (en) * | 2008-01-31 | 2009-08-06 | Applied Materials, Inc. | Cvd apparatus |
| US8183132B2 (en) * | 2009-04-10 | 2012-05-22 | Applied Materials, Inc. | Methods for fabricating group III nitride structures with a cluster tool |
| CN102414786B (zh) * | 2009-04-28 | 2016-08-24 | 应用材料公司 | 在原位清洁后利用nh3净化对mocvd腔室进行去污染处理 |
| US8110889B2 (en) * | 2009-04-28 | 2012-02-07 | Applied Materials, Inc. | MOCVD single chamber split process for LED manufacturing |
| US20110027973A1 (en) * | 2009-07-31 | 2011-02-03 | Applied Materials, Inc. | Method of forming led structures |
| WO2011017222A2 (en) * | 2009-08-04 | 2011-02-10 | Applied Materials, Inc. | Method and apparatus for dry cleaning a cooled showerhead |
| WO2011017501A2 (en) * | 2009-08-05 | 2011-02-10 | Applied Materials, Inc. | Cvd apparatus |
| US8080466B2 (en) * | 2009-08-10 | 2011-12-20 | Applied Materials, Inc. | Method for growth of nitrogen face (N-face) polarity compound nitride semiconductor device with integrated processing system |
| DE102009043840A1 (de) * | 2009-08-24 | 2011-03-03 | Aixtron Ag | CVD-Reaktor mit streifenförmig verlaufenden Gaseintrittszonen sowie Verfahren zum Abscheiden einer Schicht auf einem Substrat in einem derartigen CVD-Reaktor |
| JP2011060900A (ja) * | 2009-09-08 | 2011-03-24 | Showa Denko Kk | 半導体発光素子の製造方法およびランプ、電子機器、機械装置 |
| CN102414846A (zh) * | 2009-10-07 | 2012-04-11 | 应用材料公司 | 用于led制造的改良多腔室分离处理 |
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| KR100888440B1 (ko) * | 2007-11-23 | 2009-03-11 | 삼성전기주식회사 | 수직구조 발광다이오드 소자의 제조방법 |
| CA2653581A1 (en) * | 2009-02-11 | 2010-08-11 | Kenneth Scott Alexander Butcher | Migration and plasma enhanced chemical vapour deposition |
-
2006
- 2006-04-14 US US11/404,516 patent/US20070240631A1/en not_active Abandoned
-
2007
- 2007-04-11 JP JP2009505610A patent/JP2009533879A/ja active Pending
- 2007-04-11 WO PCT/US2007/066468 patent/WO2007121270A1/en not_active Ceased
- 2007-04-11 KR KR1020077024078A patent/KR101338230B1/ko active Active
- 2007-04-11 EP EP07760516A patent/EP2008297A1/en not_active Withdrawn
- 2007-04-11 CN CN2007800003652A patent/CN101317247B/zh active Active
- 2007-04-11 KR KR1020107029444A patent/KR101200198B1/ko active Active
- 2007-04-11 CN CN201110079465.7A patent/CN102174708B/zh active Active
- 2007-04-13 TW TW096113129A patent/TWI435374B/zh active
- 2007-04-13 TW TW100104449A patent/TWI446412B/zh active
-
2010
- 2010-11-24 US US12/954,133 patent/US20110070721A1/en not_active Abandoned
-
2011
- 2011-10-19 JP JP2011230211A patent/JP2012084892A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012084892A (ja) | 2012-04-26 |
| US20110070721A1 (en) | 2011-03-24 |
| TW200807504A (en) | 2008-02-01 |
| CN101317247B (zh) | 2011-05-25 |
| TW201120944A (en) | 2011-06-16 |
| KR101338230B1 (ko) | 2013-12-06 |
| KR101200198B1 (ko) | 2012-11-13 |
| US20070240631A1 (en) | 2007-10-18 |
| EP2008297A1 (en) | 2008-12-31 |
| CN102174708B (zh) | 2016-01-20 |
| JP2009533879A (ja) | 2009-09-17 |
| WO2007121270A1 (en) | 2007-10-25 |
| CN101317247A (zh) | 2008-12-03 |
| KR20080108382A (ko) | 2008-12-15 |
| KR20110018925A (ko) | 2011-02-24 |
| CN102174708A (zh) | 2011-09-07 |
| TWI446412B (zh) | 2014-07-21 |
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