CN102054910B - Led芯片工艺集成系统及其处理方法 - Google Patents
Led芯片工艺集成系统及其处理方法 Download PDFInfo
- Publication number
- CN102054910B CN102054910B CN2010105524128A CN201010552412A CN102054910B CN 102054910 B CN102054910 B CN 102054910B CN 2010105524128 A CN2010105524128 A CN 2010105524128A CN 201010552412 A CN201010552412 A CN 201010552412A CN 102054910 B CN102054910 B CN 102054910B
- Authority
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- China
- Prior art keywords
- deposition chamber
- led chip
- led substrate
- temperature
- integrated system
- Prior art date
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- 238000000034 method Methods 0.000 title abstract description 14
- 230000008569 process Effects 0.000 title abstract description 8
- 230000010354 integration Effects 0.000 title abstract 3
- 238000003672 processing method Methods 0.000 claims abstract description 23
- 230000005540 biological transmission Effects 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims description 378
- 230000008021 deposition Effects 0.000 claims description 367
- 239000000758 substrate Substances 0.000 claims description 198
- 238000005516 engineering process Methods 0.000 claims description 90
- 239000007789 gas Substances 0.000 claims description 62
- 238000001816 cooling Methods 0.000 claims description 41
- 238000010438 heat treatment Methods 0.000 claims description 29
- 238000012545 processing Methods 0.000 claims description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- 230000001681 protective effect Effects 0.000 claims description 26
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 238000004062 sedimentation Methods 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910021529 ammonia Inorganic materials 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 7
- 238000000605 extraction Methods 0.000 claims description 4
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 3
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 26
- 230000002035 prolonged effect Effects 0.000 abstract description 2
- 239000013049 sediment Substances 0.000 abstract 4
- 239000010410 layer Substances 0.000 description 241
- 229910002601 GaN Inorganic materials 0.000 description 88
- 239000003595 mist Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000003344 environmental pollutant Substances 0.000 description 4
- 231100000719 pollutant Toxicity 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000009395 breeding Methods 0.000 description 1
- 230000001488 breeding effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (30)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010105524128A CN102054910B (zh) | 2010-11-19 | 2010-11-19 | Led芯片工艺集成系统及其处理方法 |
KR1020137011679A KR20130105671A (ko) | 2010-11-19 | 2011-08-23 | 발광다이오드 공정의 통합 시스템 및 그 공정 방법 |
PCT/CN2011/078773 WO2012065467A1 (zh) | 2010-11-19 | 2011-08-23 | Led芯片工艺集成系统及其处理方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010105524128A CN102054910B (zh) | 2010-11-19 | 2010-11-19 | Led芯片工艺集成系统及其处理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102054910A CN102054910A (zh) | 2011-05-11 |
CN102054910B true CN102054910B (zh) | 2013-07-31 |
Family
ID=43959059
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010105524128A Active CN102054910B (zh) | 2010-11-19 | 2010-11-19 | Led芯片工艺集成系统及其处理方法 |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR20130105671A (zh) |
CN (1) | CN102054910B (zh) |
WO (1) | WO2012065467A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102054910B (zh) * | 2010-11-19 | 2013-07-31 | 理想能源设备(上海)有限公司 | Led芯片工艺集成系统及其处理方法 |
CN102994983A (zh) * | 2011-09-15 | 2013-03-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Mocvd设备和利用该mocvd形成白光led的方法 |
CN117096048A (zh) * | 2022-05-09 | 2023-11-21 | 华为技术有限公司 | 沉积装置 |
CN114959628A (zh) * | 2022-06-18 | 2022-08-30 | 安徽纯源镀膜科技有限公司 | 一种真空离子镀膜预处理设备 |
CN116926513B (zh) * | 2023-09-15 | 2024-01-09 | 广州市艾佛光通科技有限公司 | 一种pecvd设备 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5259881A (en) * | 1991-05-17 | 1993-11-09 | Materials Research Corporation | Wafer processing cluster tool batch preheating and degassing apparatus |
CN1691845A (zh) * | 1999-07-23 | 2005-11-02 | 株式会社半导体能源研究所 | 制造电致发光显示装置的方法和形成薄膜的装置 |
CN1835258A (zh) * | 2005-03-17 | 2006-09-20 | 株式会社爱发科 | 有机电致发光器件制造方法及有机电致发光器件制造装置 |
CN101755330A (zh) * | 2007-07-19 | 2010-06-23 | 太阳能公司 | 具有线性源的群集工具 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5941470A (ja) * | 1982-08-31 | 1984-03-07 | Shimadzu Corp | 多室形薄膜作成装置 |
US5186718A (en) * | 1989-05-19 | 1993-02-16 | Applied Materials, Inc. | Staged-vacuum wafer processing system and method |
CN1996552B (zh) * | 2001-08-31 | 2012-09-05 | 克罗辛自动化公司 | 晶片机 |
US20070240631A1 (en) * | 2006-04-14 | 2007-10-18 | Applied Materials, Inc. | Epitaxial growth of compound nitride semiconductor structures |
CN102054910B (zh) * | 2010-11-19 | 2013-07-31 | 理想能源设备(上海)有限公司 | Led芯片工艺集成系统及其处理方法 |
-
2010
- 2010-11-19 CN CN2010105524128A patent/CN102054910B/zh active Active
-
2011
- 2011-08-23 KR KR1020137011679A patent/KR20130105671A/ko not_active Application Discontinuation
- 2011-08-23 WO PCT/CN2011/078773 patent/WO2012065467A1/zh active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5259881A (en) * | 1991-05-17 | 1993-11-09 | Materials Research Corporation | Wafer processing cluster tool batch preheating and degassing apparatus |
CN1691845A (zh) * | 1999-07-23 | 2005-11-02 | 株式会社半导体能源研究所 | 制造电致发光显示装置的方法和形成薄膜的装置 |
CN1835258A (zh) * | 2005-03-17 | 2006-09-20 | 株式会社爱发科 | 有机电致发光器件制造方法及有机电致发光器件制造装置 |
CN101755330A (zh) * | 2007-07-19 | 2010-06-23 | 太阳能公司 | 具有线性源的群集工具 |
Also Published As
Publication number | Publication date |
---|---|
CN102054910A (zh) | 2011-05-11 |
KR20130105671A (ko) | 2013-09-25 |
WO2012065467A1 (zh) | 2012-05-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: IDEAL ENERGY EQUIPMENT (SHANGHAI) LTD. Free format text: FORMER OWNER: IDEAL ENERGY EQUIPMENT LTD. Effective date: 20110628 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 4301, TRINITY CHAMBERS, ROAD TOWN, TORTOLA, BRITISH VIRGIN ISLANDS TO: 201203 NO. 1, JULI ROAD, ZHANGJIANG, PUDONG NEW DISTRICT, SHANGHAI |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20110628 Address after: 201203 Pudong New Area Zhangjiang Road, Shanghai, No. 1 Curie Applicant after: Ideal Energy Equipment (Shanghai) Ltd. Address before: The British Virgin Islands, the island of Hispaniola, Luo Decheng, 31, 4301 Applicant before: Ideal Energy Equipment Ltd. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190719 Address after: Building B, Building 4, 3255 Sixian Road, Songjiang District, Shanghai, 201620 Patentee after: DEPOSITION EQUIPMENT AND APPLICATIONS (SHANGHAI) Ltd. Address before: 201203 Pudong New Area Zhangjiang Road, Shanghai, No. 1 Curie Patentee before: Ideal Energy Equipment (Shanghai) Ltd. |
|
TR01 | Transfer of patent right | ||
CP03 | Change of name, title or address |
Address after: Room 402, building 3, 3255 Sixian Road, Songjiang District, Shanghai, 201602 Patentee after: Ideal semiconductor equipment (Shanghai) Co.,Ltd. Address before: Building B, Building 4, 3255 Sixian Road, Songjiang District, Shanghai, 201620 Patentee before: DEPOSITION EQUIPMENT AND APPLICATIONS (SHANGHAI) Ltd. |
|
CP03 | Change of name, title or address | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: LED chip process integration system and its processing method Effective date of registration: 20230209 Granted publication date: 20130731 Pledgee: Agricultural Bank of China Limited Shanghai Songjiang Sub-branch Pledgor: Ideal semiconductor equipment (Shanghai) Co.,Ltd. Registration number: Y2023310000023 |