TWI432022B - 具有可選擇接收性之互補式金屬氧化物半導體影像感測器像素 - Google Patents

具有可選擇接收性之互補式金屬氧化物半導體影像感測器像素 Download PDF

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Publication number
TWI432022B
TWI432022B TW095119292A TW95119292A TWI432022B TW I432022 B TWI432022 B TW I432022B TW 095119292 A TW095119292 A TW 095119292A TW 95119292 A TW95119292 A TW 95119292A TW I432022 B TWI432022 B TW I432022B
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TW
Taiwan
Prior art keywords
pixel
charge
switch
voltage conversion
charge voltage
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TW095119292A
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English (en)
Chinese (zh)
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TW200704169A (en
Inventor
Robert M Guidash
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Omnivision Tech Inc
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Publication of TW200704169A publication Critical patent/TW200704169A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW095119292A 2005-06-01 2006-05-30 具有可選擇接收性之互補式金屬氧化物半導體影像感測器像素 TWI432022B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US68610405P 2005-06-01 2005-06-01
US11/408,640 US7705900B2 (en) 2005-06-01 2006-04-21 CMOS image sensor pixel with selectable binning and conversion gain

Publications (2)

Publication Number Publication Date
TW200704169A TW200704169A (en) 2007-01-16
TWI432022B true TWI432022B (zh) 2014-03-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW095119292A TWI432022B (zh) 2005-06-01 2006-05-30 具有可選擇接收性之互補式金屬氧化物半導體影像感測器像素

Country Status (6)

Country Link
US (1) US7705900B2 (enExample)
EP (1) EP1900191B1 (enExample)
JP (1) JP5355079B2 (enExample)
KR (1) KR101254360B1 (enExample)
TW (1) TWI432022B (enExample)
WO (1) WO2006130518A1 (enExample)

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Also Published As

Publication number Publication date
US7705900B2 (en) 2010-04-27
JP2008546313A (ja) 2008-12-18
US20060274176A1 (en) 2006-12-07
EP1900191A1 (en) 2008-03-19
EP1900191B1 (en) 2015-07-08
WO2006130518A1 (en) 2006-12-07
JP5355079B2 (ja) 2013-11-27
KR20080011680A (ko) 2008-02-05
KR101254360B1 (ko) 2013-04-12
TW200704169A (en) 2007-01-16

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