TWI422076B - 半導體裝置及半導體裝置之製造方法 - Google Patents

半導體裝置及半導體裝置之製造方法 Download PDF

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Publication number
TWI422076B
TWI422076B TW099103472A TW99103472A TWI422076B TW I422076 B TWI422076 B TW I422076B TW 099103472 A TW099103472 A TW 099103472A TW 99103472 A TW99103472 A TW 99103472A TW I422076 B TWI422076 B TW I422076B
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Taiwan
Prior art keywords
stop layer
solder stop
conductor arrangement
upper side
semiconductor device
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TW099103472A
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English (en)
Chinese (zh)
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TW201112458A (en
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馬提亞 斯柏
麥可 席斯朋格
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歐斯朗奧托半導體股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4842—Mechanical treatment, e.g. punching, cutting, deforming, cold welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49586—Insulating layers on lead frames
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    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/732—Location after the connecting process
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H10H20/80—Constructional details
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    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
TW099103472A 2009-02-12 2010-02-05 半導體裝置及半導體裝置之製造方法 TWI422076B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009008738A DE102009008738A1 (de) 2009-02-12 2009-02-12 Halbleiteranordnung und Verfahren zum Herstellen einer Halbleiteranordnung

Publications (2)

Publication Number Publication Date
TW201112458A TW201112458A (en) 2011-04-01
TWI422076B true TWI422076B (zh) 2014-01-01

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Country Link
US (1) US8710609B2 (enExample)
EP (1) EP2396832B1 (enExample)
JP (1) JP5385411B2 (enExample)
KR (1) KR101616153B1 (enExample)
CN (1) CN102318090B (enExample)
DE (1) DE102009008738A1 (enExample)
TW (1) TWI422076B (enExample)
WO (1) WO2010091967A1 (enExample)

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JP5652175B2 (ja) * 2010-12-08 2015-01-14 日亜化学工業株式会社 発光装置及びその製造方法
JP5817297B2 (ja) * 2011-06-03 2015-11-18 東芝ライテック株式会社 発光装置及び照明装置
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TWI479622B (zh) * 2011-11-15 2015-04-01 精材科技股份有限公司 晶片封裝體及其形成方法
US20130307013A1 (en) * 2012-05-15 2013-11-21 Avago Technlogies Ecbu Ip (Singapore) Pte. Ltd. Light emitting device with dark layer
JP2015115432A (ja) * 2013-12-11 2015-06-22 ローム株式会社 半導体装置
DE102014104819A1 (de) * 2014-03-26 2015-10-01 Heraeus Deutschland GmbH & Co. KG Träger und/oder Clip für Halbleiterelemente, Halbleiterbauelement und Verfahren zur Herstellung
JP2017157593A (ja) * 2016-02-29 2017-09-07 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 発光ダイオード、発光ダイオードの製造方法、発光ダイオード表示装置及び発光ダイオード表示装置の製造方法
DE102016124373A1 (de) * 2016-12-14 2018-06-14 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung, Pixelmodul, und Verfahren zur Herstellung einer strahlungsemittierenden Vorrichtung
DE102017105235B4 (de) 2017-03-13 2022-06-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement mit Verstärkungsschicht und Verfahren zur Herstellung eines Bauelements
JP7004397B2 (ja) * 2017-06-09 2022-01-21 ローム株式会社 光学装置
DE102018128109A1 (de) * 2018-11-09 2020-05-14 Infineon Technologies Ag Ein clip mit einem diebefestigungsabschnitt, der konfiguriert ist, um das entfernen von hohlräumen beim löten zu fördern
US10923436B2 (en) * 2019-03-25 2021-02-16 Qualcomm Incorporated Techniques for thermal matching of integrated circuits
IT201900009501A1 (it) * 2019-06-19 2020-12-19 St Microelectronics Srl Procedimento di die attachment per dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente
CN116435201B (zh) * 2023-06-12 2023-09-12 四川遂宁市利普芯微电子有限公司 一种塑封封装方法以及器件封装结构

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JP5385411B2 (ja) 2014-01-08
US20110303945A1 (en) 2011-12-15
EP2396832A1 (de) 2011-12-21
CN102318090A (zh) 2012-01-11
US8710609B2 (en) 2014-04-29
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