KR101616153B1 - 땜납 레지스트층을 갖는 봉지된 광전 반도체 장치 및 그 제조 방법 - Google Patents

땜납 레지스트층을 갖는 봉지된 광전 반도체 장치 및 그 제조 방법 Download PDF

Info

Publication number
KR101616153B1
KR101616153B1 KR1020117021181A KR20117021181A KR101616153B1 KR 101616153 B1 KR101616153 B1 KR 101616153B1 KR 1020117021181 A KR1020117021181 A KR 1020117021181A KR 20117021181 A KR20117021181 A KR 20117021181A KR 101616153 B1 KR101616153 B1 KR 101616153B1
Authority
KR
South Korea
Prior art keywords
solder resist
resist layer
conductor device
upper side
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020117021181A
Other languages
English (en)
Korean (ko)
Other versions
KR20110127199A (ko
Inventor
미카엘 지츨스퍼거
마티아스 스펠
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오스람 옵토 세미컨덕터스 게엠베하 filed Critical 오스람 옵토 세미컨덕터스 게엠베하
Publication of KR20110127199A publication Critical patent/KR20110127199A/ko
Application granted granted Critical
Publication of KR101616153B1 publication Critical patent/KR101616153B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4842—Mechanical treatment, e.g. punching, cutting, deforming, cold welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49586—Insulating layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/183—Connection portion, e.g. seal
    • H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
KR1020117021181A 2009-02-12 2010-01-29 땜납 레지스트층을 갖는 봉지된 광전 반도체 장치 및 그 제조 방법 Expired - Fee Related KR101616153B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009008738.9 2009-02-12
DE102009008738A DE102009008738A1 (de) 2009-02-12 2009-02-12 Halbleiteranordnung und Verfahren zum Herstellen einer Halbleiteranordnung

Publications (2)

Publication Number Publication Date
KR20110127199A KR20110127199A (ko) 2011-11-24
KR101616153B1 true KR101616153B1 (ko) 2016-04-27

Family

ID=42091769

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117021181A Expired - Fee Related KR101616153B1 (ko) 2009-02-12 2010-01-29 땜납 레지스트층을 갖는 봉지된 광전 반도체 장치 및 그 제조 방법

Country Status (8)

Country Link
US (1) US8710609B2 (enExample)
EP (1) EP2396832B1 (enExample)
JP (1) JP5385411B2 (enExample)
KR (1) KR101616153B1 (enExample)
CN (1) CN102318090B (enExample)
DE (1) DE102009008738A1 (enExample)
TW (1) TWI422076B (enExample)
WO (1) WO2010091967A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010026344A1 (de) * 2010-07-07 2012-01-12 Osram Opto Semiconductors Gmbh Leuchtdiode
DE102010027313A1 (de) 2010-07-16 2012-01-19 Osram Opto Semiconductors Gmbh Trägervorrichtung für einen Halbleiterchip, elektronisches Bauelement mit einer Trägervorrichtung und optoelektronisches Bauelement mit einer Trägervorrichtung
JP5652175B2 (ja) * 2010-12-08 2015-01-14 日亜化学工業株式会社 発光装置及びその製造方法
JP5817297B2 (ja) * 2011-06-03 2015-11-18 東芝ライテック株式会社 発光装置及び照明装置
US9397274B2 (en) 2011-08-24 2016-07-19 Lg Innotek Co., Ltd. Light emitting device package
KR101849712B1 (ko) * 2011-09-02 2018-04-17 엘지이노텍 주식회사 발광소자 패키지, 백라이트 유닛 및 영상표시장치
TWI479622B (zh) * 2011-11-15 2015-04-01 精材科技股份有限公司 晶片封裝體及其形成方法
US20130307013A1 (en) * 2012-05-15 2013-11-21 Avago Technlogies Ecbu Ip (Singapore) Pte. Ltd. Light emitting device with dark layer
JP2015115432A (ja) * 2013-12-11 2015-06-22 ローム株式会社 半導体装置
DE102014104819A1 (de) * 2014-03-26 2015-10-01 Heraeus Deutschland GmbH & Co. KG Träger und/oder Clip für Halbleiterelemente, Halbleiterbauelement und Verfahren zur Herstellung
JP2017157593A (ja) * 2016-02-29 2017-09-07 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 発光ダイオード、発光ダイオードの製造方法、発光ダイオード表示装置及び発光ダイオード表示装置の製造方法
DE102016124373A1 (de) * 2016-12-14 2018-06-14 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung, Pixelmodul, und Verfahren zur Herstellung einer strahlungsemittierenden Vorrichtung
DE102017105235B4 (de) 2017-03-13 2022-06-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement mit Verstärkungsschicht und Verfahren zur Herstellung eines Bauelements
JP7004397B2 (ja) * 2017-06-09 2022-01-21 ローム株式会社 光学装置
DE102018128109A1 (de) * 2018-11-09 2020-05-14 Infineon Technologies Ag Ein clip mit einem diebefestigungsabschnitt, der konfiguriert ist, um das entfernen von hohlräumen beim löten zu fördern
US10923436B2 (en) * 2019-03-25 2021-02-16 Qualcomm Incorporated Techniques for thermal matching of integrated circuits
IT201900009501A1 (it) * 2019-06-19 2020-12-19 St Microelectronics Srl Procedimento di die attachment per dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente
CN116435201B (zh) * 2023-06-12 2023-09-12 四川遂宁市利普芯微电子有限公司 一种塑封封装方法以及器件封装结构

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003110058A (ja) 2001-10-01 2003-04-11 Dainippon Printing Co Ltd 半導体パッケージ及びその製造方法体装置用回路部材
WO2003034508A1 (fr) 2001-10-12 2003-04-24 Nichia Corporation Dispositif d'emission de lumiere et procede de fabrication de celui-ci
JP2008282917A (ja) 2007-05-09 2008-11-20 C I Kasei Co Ltd 発光装置および発光装置を作製する基板用リードフレーム

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2531382B2 (ja) * 1994-05-26 1996-09-04 日本電気株式会社 ボ―ルグリッドアレイ半導体装置およびその製造方法
JP3115807B2 (ja) * 1995-08-25 2000-12-11 株式会社三井ハイテック 半導体装置
US5973337A (en) 1997-08-25 1999-10-26 Motorola, Inc. Ball grid device with optically transmissive coating
US6667541B1 (en) * 1998-10-21 2003-12-23 Matsushita Electric Industrial Co., Ltd. Terminal land frame and method for manufacturing the same
EP1059668A3 (en) * 1999-06-09 2007-07-18 Sanyo Electric Co., Ltd. Hybrid integrated circuit device
JP2001094026A (ja) * 1999-09-22 2001-04-06 Toshiba Corp リードフレーム及びその製造方法
EP1153792A1 (de) * 2000-05-09 2001-11-14 SIDLER GMBH & CO Leuchtenanordnung mit mehreren LED's
JP2002026198A (ja) 2000-07-04 2002-01-25 Nec Corp 半導体装置及びその製造方法
TW473951B (en) * 2001-01-17 2002-01-21 Siliconware Precision Industries Co Ltd Non-leaded quad flat image sensor package
US6649832B1 (en) 2001-08-31 2003-11-18 Cypress Semiconductor Corporation Apparatus and method for coupling with components in a surface mount package
EP1357595A1 (en) * 2002-04-22 2003-10-29 Scientek Corporation Ball grid array semiconductor package with resin coated core
JP5068075B2 (ja) 2003-10-15 2012-11-07 奇美電子股▲ふん▼有限公司 電子デバイス及びその製造方法
CN100403565C (zh) * 2004-09-16 2008-07-16 日立Aic株式会社 Led器件
KR100674871B1 (ko) * 2005-06-01 2007-01-30 삼성전기주식회사 측면 발광형 엘이디 패키지 및 그 제조 방법
TW200707768A (en) * 2005-08-15 2007-02-16 Silicon Touch Tech Inc Sensing apparatus capable of easily selecting the light-sensing curve
JP4049186B2 (ja) * 2006-01-26 2008-02-20 ソニー株式会社 光源装置
JP5232369B2 (ja) 2006-02-03 2013-07-10 日立化成株式会社 光半導体素子搭載用パッケージ基板の製造方法およびこれを用いた光半導体装置の製造方法
JP2007324205A (ja) * 2006-05-30 2007-12-13 Toyoda Gosei Co Ltd 発光装置
JP2008140646A (ja) * 2006-12-01 2008-06-19 Sony Corp バックライト装置及び液晶表示装置
JP5089212B2 (ja) * 2007-03-23 2012-12-05 シャープ株式会社 発光装置およびそれを用いたｌｅｄランプ、発光装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003110058A (ja) 2001-10-01 2003-04-11 Dainippon Printing Co Ltd 半導体パッケージ及びその製造方法体装置用回路部材
WO2003034508A1 (fr) 2001-10-12 2003-04-24 Nichia Corporation Dispositif d'emission de lumiere et procede de fabrication de celui-ci
JP2008282917A (ja) 2007-05-09 2008-11-20 C I Kasei Co Ltd 発光装置および発光装置を作製する基板用リードフレーム

Also Published As

Publication number Publication date
CN102318090B (zh) 2015-04-08
KR20110127199A (ko) 2011-11-24
EP2396832B1 (de) 2016-03-30
TWI422076B (zh) 2014-01-01
JP5385411B2 (ja) 2014-01-08
US20110303945A1 (en) 2011-12-15
EP2396832A1 (de) 2011-12-21
CN102318090A (zh) 2012-01-11
US8710609B2 (en) 2014-04-29
TW201112458A (en) 2011-04-01
WO2010091967A1 (de) 2010-08-19
JP2012517709A (ja) 2012-08-02
DE102009008738A1 (de) 2010-08-19

Similar Documents

Publication Publication Date Title
KR101616153B1 (ko) 땜납 레지스트층을 갖는 봉지된 광전 반도체 장치 및 그 제조 방법
TWI491081B (zh) 可表面安裝之光電組件及可表面安裝之光電組件之製造方法
KR101659103B1 (ko) 반도체 소자를 위한 지지 몸체, 반도체 소자 및 지지 몸체의 제조 방법
US20070018191A1 (en) Side view LED with improved arrangement of protection device
CN103069563B (zh) 用于制造至少一个光电子半导体器件的方法
JP7240148B2 (ja) 光結合装置
JP4910220B1 (ja) Ｌｅｄモジュール装置及びその製造方法
KR20160008199A (ko) 광전자 컴포넌트를 포함하는 조명 디바이스
JP5688403B2 (ja) オプトエレクトロニクス部品
CN116210095A (zh) 光电子半导体器件和制造方法
JP2016149386A (ja) 半導体装置、電子装置、及び半導体装置の製造方法
CN108701740A (zh) 半导体器件和用于制造半导体器件的方法
CN103155185B (zh) 光电子半导体器件
KR20130062985A (ko) 복사 방출 소자 및 복사 방출 소자의 제조 방법
JP2019512165A (ja) 接続キャリア、オプトエレクトロニクス部品、および接続キャリアまたはオプトエレクトロニクス部品の製造方法
JP7652638B2 (ja) 半導体装置、その製造方法および基板
KR101762597B1 (ko) 반도체 발광소자용 기판
CN100570910C (zh) 表面安装型led
US20240250228A1 (en) Optoelectronic semiconductor component and panel
KR101693545B1 (ko) 전기 컴포넌트 및 전기 컴포넌트들을 생산하기 위한 방법
JP5392059B2 (ja) 半導体装置
JP6899226B2 (ja) 半導体装置
JP6679799B2 (ja) 発光装置
JP2003060240A (ja) 発光ダイオード及びその製造方法
JP4708014B2 (ja) 光半導体装置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20190422

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20190422

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000