TWI413227B - 靜電放電保護電路及其操作方法 - Google Patents

靜電放電保護電路及其操作方法 Download PDF

Info

Publication number
TWI413227B
TWI413227B TW093130261A TW93130261A TWI413227B TW I413227 B TWI413227 B TW I413227B TW 093130261 A TW093130261 A TW 093130261A TW 93130261 A TW93130261 A TW 93130261A TW I413227 B TWI413227 B TW I413227B
Authority
TW
Taiwan
Prior art keywords
bus
circuit
esd
voltage
coupled
Prior art date
Application number
TW093130261A
Other languages
English (en)
Chinese (zh)
Other versions
TW200525726A (en
Inventor
史達金勒 麥可
米勒 詹姆士Ｗ
Original Assignee
飛思卡爾半導體公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 飛思卡爾半導體公司 filed Critical 飛思卡爾半導體公司
Publication of TW200525726A publication Critical patent/TW200525726A/zh
Application granted granted Critical
Publication of TWI413227B publication Critical patent/TWI413227B/zh

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/20—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess voltage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/20—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess voltage
    • H02H3/22—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess voltage of short duration, e.g. lightning
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/921—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Logic Circuits (AREA)
TW093130261A 2003-10-10 2004-10-06 靜電放電保護電路及其操作方法 TWI413227B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/684,112 US6970336B2 (en) 2003-10-10 2003-10-10 Electrostatic discharge protection circuit and method of operation

Publications (2)

Publication Number Publication Date
TW200525726A TW200525726A (en) 2005-08-01
TWI413227B true TWI413227B (zh) 2013-10-21

Family

ID=34422912

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093130261A TWI413227B (zh) 2003-10-10 2004-10-06 靜電放電保護電路及其操作方法

Country Status (7)

Country Link
US (1) US6970336B2 (enExample)
EP (1) EP1673844A1 (enExample)
JP (1) JP4727584B2 (enExample)
KR (1) KR101110942B1 (enExample)
CN (1) CN100521439C (enExample)
TW (1) TWI413227B (enExample)
WO (1) WO2005039011A1 (enExample)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3796034B2 (ja) * 1997-12-26 2006-07-12 株式会社ルネサステクノロジ レベル変換回路および半導体集積回路装置
US7583484B2 (en) * 2003-08-20 2009-09-01 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit and method for ESD protection
TWI224391B (en) * 2004-02-10 2004-11-21 Univ Nat Chiao Tung Electrostatic discharge protection circuit
US20060028776A1 (en) * 2004-08-09 2006-02-09 Michael Stockinger Electrostatic discharge protection for an integrated circuit
US7518841B2 (en) * 2004-11-02 2009-04-14 Industrial Technology Research Institute Electrostatic discharge protection for power amplifier in radio frequency integrated circuit
US7446990B2 (en) * 2005-02-11 2008-11-04 Freescale Semiconductor, Inc. I/O cell ESD system
CN101258597A (zh) * 2005-07-08 2008-09-03 Nxp股份有限公司 具有静电放电保护的集成电路
US7639462B2 (en) * 2005-10-25 2009-12-29 Honeywell International Inc. Method and system for reducing transient event effects within an electrostatic discharge power clamp
US7808117B2 (en) * 2006-05-16 2010-10-05 Freescale Semiconductor, Inc. Integrated circuit having pads and input/output (I/O) cells
US20070267748A1 (en) * 2006-05-16 2007-11-22 Tran Tu-Anh N Integrated circuit having pads and input/output (i/o) cells
US7660086B2 (en) * 2006-06-08 2010-02-09 Cypress Semiconductor Corporation Programmable electrostatic discharge (ESD) protection device
US7589945B2 (en) * 2006-08-31 2009-09-15 Freescale Semiconductor, Inc. Distributed electrostatic discharge protection circuit with varying clamp size
JP4917394B2 (ja) * 2006-09-15 2012-04-18 ルネサスエレクトロニクス株式会社 出力回路
WO2008059451A2 (en) * 2006-11-15 2008-05-22 Nxp B.V. Protection circuit with overdrive technique
CN100568659C (zh) * 2006-12-08 2009-12-09 智原科技股份有限公司 静电放电保护电路
KR100996195B1 (ko) 2007-04-05 2010-11-24 주식회사 하이닉스반도체 정전기 방전 보호 장치
WO2008132561A1 (en) * 2007-04-27 2008-11-06 Freescale Semiconductor, Inc. Integrated circuit, electronic device and esd protection therefor
US7777998B2 (en) 2007-09-10 2010-08-17 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor
CN101425799B (zh) * 2007-11-02 2011-04-20 晨星半导体股份有限公司 用以避免nmos组件承受过高电压的保护电路
US7911750B2 (en) * 2008-02-27 2011-03-22 Freescale Semiconductor, Inc. Resistor triggered electrostatic discharge protection
KR101633858B1 (ko) * 2009-02-17 2016-06-28 삼성전자주식회사 패드인터페이스회로 및 패드인터페이스회로 신뢰성 향상방법
US8760827B2 (en) * 2009-04-15 2014-06-24 International Business Machines Corporation Robust ESD protection circuit, method and design structure for tolerant and failsafe designs
CN102474094B (zh) * 2009-08-06 2014-11-12 飞思卡尔半导体公司 具有保护电路的电子装置
JP2011228372A (ja) * 2010-04-16 2011-11-10 Toshiba Corp 半導体集積回路装置
US8456784B2 (en) * 2010-05-03 2013-06-04 Freescale Semiconductor, Inc. Overvoltage protection circuit for an integrated circuit
TWI420770B (zh) * 2010-10-12 2013-12-21 Innolux Corp 具有靜電放電保護的驅動器電路
US8730625B2 (en) * 2011-09-22 2014-05-20 Freescale Semiconductor, Inc. Electrostatic discharge protection circuit for an integrated circuit
KR101885334B1 (ko) * 2012-01-18 2018-08-07 삼성전자 주식회사 정전기 방전 보호 회로
CN103795049B (zh) * 2012-10-29 2017-03-01 台湾积体电路制造股份有限公司 使用i/o焊盘的esd保护电路
US8867180B2 (en) * 2012-11-30 2014-10-21 Tesla Motors, Inc. Dynamic current protection in energy distribution systems
US9362252B2 (en) 2013-03-13 2016-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus of ESD protection in stacked die semiconductor device
US9076656B2 (en) * 2013-05-02 2015-07-07 Freescale Semiconductor, Inc. Electrostatic discharge (ESD) clamp circuit with high effective holding voltage
US9064938B2 (en) * 2013-05-30 2015-06-23 Freescale Semiconductor, Inc. I/O cell ESD system
US9425188B2 (en) 2013-09-26 2016-08-23 Texas Instruments Incorporated Active ESD protection circuit with blocking diode
JP6143690B2 (ja) 2014-03-12 2017-06-07 株式会社東芝 出力回路
US9478529B2 (en) 2014-05-28 2016-10-25 Freescale Semiconductor, Inc. Electrostatic discharge protection system
US9553446B2 (en) 2014-10-31 2017-01-24 Nxp Usa, Inc. Shared ESD circuitry
GB2537916B (en) * 2015-04-30 2017-08-30 Advanced Risc Mach Ltd Power supply clamp
CN205621414U (zh) * 2016-04-26 2016-10-05 京东方科技集团股份有限公司 静电放电电路、阵列基板和显示装置
US10074643B2 (en) 2016-09-22 2018-09-11 Nxp Usa, Inc. Integrated circuit with protection from transient electrical stress events and method therefor
US10320185B2 (en) 2016-09-22 2019-06-11 Nxp Usa, Inc. Integrated circuit with protection from transient electrical stress events and method therefor
JP6828588B2 (ja) 2017-05-22 2021-02-10 株式会社ソシオネクスト 半導体装置
US10811873B2 (en) * 2017-11-28 2020-10-20 Stmicroelectronics International N.V. Power supply clamp for electrostatic discharge (ESD) protection having a circuit for controlling clamp time out behavior
US11004843B2 (en) * 2019-01-18 2021-05-11 Nxp Usa, Inc. Switch control circuit for a power switch with electrostatic discharge (ESD) protection
US11315919B2 (en) 2019-02-05 2022-04-26 Nxp Usa, Inc. Circuit for controlling a stacked snapback clamp
US10930639B2 (en) 2019-02-19 2021-02-23 Nxp Usa, Inc. ESD protection circuit providing multiple detection signals
US11056879B2 (en) 2019-06-12 2021-07-06 Nxp Usa, Inc. Snapback clamps for ESD protection with voltage limited, centralized triggering scheme
US11581729B2 (en) * 2020-05-01 2023-02-14 Cypress Semiconductor Corporation Combined positive and negative voltage electrostatic discharge (ESD) protection clamp with cascoded circuitry
KR102852456B1 (ko) * 2021-01-27 2025-08-29 주식회사 디비하이텍 정전기 보호 회로
US11716073B2 (en) * 2021-04-07 2023-08-01 Mediatek Inc. Chip with pad tracking
US12034000B2 (en) * 2022-03-23 2024-07-09 Nxp B.V. Double IO pad cell including electrostatic discharge protection scheme with reduced latch-up risk
KR20240072440A (ko) 2022-11-16 2024-05-24 삼성디스플레이 주식회사 표시 장치
KR20240120068A (ko) * 2023-01-31 2024-08-07 삼성전자주식회사 반도체 장치

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5034845A (en) * 1988-10-21 1991-07-23 Sharp Kabushiki Kaisha Integrated circuit apparatus including static electricity protection circuit
US5301084A (en) * 1991-08-21 1994-04-05 National Semiconductor Corporation Electrostatic discharge protection for CMOS integrated circuits
TW270229B (en) * 1995-01-14 1996-02-11 United Microelectronics Corp Electrostatic discharge protecting circuit for SCR
US5907464A (en) * 1997-03-24 1999-05-25 Intel Corporation MOSFET-based power supply clamps for electrostatic discharge protection of integrated circuits
US5956219A (en) * 1998-06-08 1999-09-21 Intel Corporation High voltage power supply clamp circuitry for electrostatic discharge (ESD) protection
TW441073B (en) * 2000-03-17 2001-06-16 United Microelectronics Corp Electrostatic discharge protection circuit for integrated circuit
US6385021B1 (en) * 2000-04-10 2002-05-07 Motorola, Inc. Electrostatic discharge (ESD) protection circuit

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5311391A (en) * 1993-05-04 1994-05-10 Hewlett-Packard Company Electrostatic discharge protection circuit with dynamic triggering
DE69622465T2 (de) * 1995-04-24 2003-05-08 Conexant Systems, Inc. Verfahren und Apparat zum Koppeln verschiedener, unabhängiger on-Chip-Vdd-Busse an eine ESD-Klemme
JP3184148B2 (ja) * 1998-04-15 2001-07-09 日本電気アイシーマイコンシステム株式会社 半導体集積回路装置
US5946177A (en) * 1998-08-17 1999-08-31 Motorola, Inc. Circuit for electrostatic discharge protection
JP2002270774A (ja) * 2001-03-12 2002-09-20 Hitachi Ltd 半導体装置
CN1189941C (zh) * 2001-07-27 2005-02-16 旺宏电子股份有限公司 静电放电保护电路
US6724603B2 (en) * 2002-08-09 2004-04-20 Motorola, Inc. Electrostatic discharge protection circuitry and method of operation

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5034845A (en) * 1988-10-21 1991-07-23 Sharp Kabushiki Kaisha Integrated circuit apparatus including static electricity protection circuit
US5301084A (en) * 1991-08-21 1994-04-05 National Semiconductor Corporation Electrostatic discharge protection for CMOS integrated circuits
TW270229B (en) * 1995-01-14 1996-02-11 United Microelectronics Corp Electrostatic discharge protecting circuit for SCR
US5907464A (en) * 1997-03-24 1999-05-25 Intel Corporation MOSFET-based power supply clamps for electrostatic discharge protection of integrated circuits
US5956219A (en) * 1998-06-08 1999-09-21 Intel Corporation High voltage power supply clamp circuitry for electrostatic discharge (ESD) protection
TW441073B (en) * 2000-03-17 2001-06-16 United Microelectronics Corp Electrostatic discharge protection circuit for integrated circuit
US6385021B1 (en) * 2000-04-10 2002-05-07 Motorola, Inc. Electrostatic discharge (ESD) protection circuit

Also Published As

Publication number Publication date
US20050078419A1 (en) 2005-04-14
CN1868104A (zh) 2006-11-22
KR101110942B1 (ko) 2012-03-13
CN100521439C (zh) 2009-07-29
TW200525726A (en) 2005-08-01
JP4727584B2 (ja) 2011-07-20
EP1673844A1 (en) 2006-06-28
US6970336B2 (en) 2005-11-29
KR20060122813A (ko) 2006-11-30
JP2007511898A (ja) 2007-05-10
WO2005039011A1 (en) 2005-04-28

Similar Documents

Publication Publication Date Title
TWI413227B (zh) 靜電放電保護電路及其操作方法
US20050180076A1 (en) Electrostatic discharge protection circuit
US6724603B2 (en) Electrostatic discharge protection circuitry and method of operation
US9076656B2 (en) Electrostatic discharge (ESD) clamp circuit with high effective holding voltage
CN101288215B (zh) I/o单元esd系统
TWI425732B (zh) 積體電路及輸入/輸出(i/o)單元庫以及用於在一積體電路處補償靜電放電(esd)之方法
US8830640B2 (en) Electrostatic discharge protection circuit
US20050068702A1 (en) Electro-static discharge protection circuit
KR101039856B1 (ko) 정전기 방전 회로
US20050030688A1 (en) ESD protection circuit having a control circuit
US6989979B1 (en) Active ESD shunt with transistor feedback to reduce latch-up susceptibility
TWI628447B (zh) Semiconductor integrated circuit device
US20150043113A1 (en) Esd clamp circuit
US8422180B2 (en) High-voltage-tolerant ESD clamp circuit with low leakage current fabricated by low-voltage CMOS process
US10381826B2 (en) Integrated circuit electrostatic discharge protection
US7420789B2 (en) ESD protection system for multi-power domain circuitry
JP2589938B2 (ja) 半導体集積回路装置の静電破壊保護回路
US10454269B2 (en) Dynamically triggered electrostatic discharge cell
TWI387093B (zh) 利用低壓元件實現的低漏電高壓電源靜電放電保護電路
JP2002299566A (ja) 保護回路
KR20070070966A (ko) 정전기 방전 보호 회로

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees