CN100521439C - 静电放电保护电路及操作方法 - Google Patents

静电放电保护电路及操作方法 Download PDF

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Publication number
CN100521439C
CN100521439C CNB200480029739XA CN200480029739A CN100521439C CN 100521439 C CN100521439 C CN 100521439C CN B200480029739X A CNB200480029739X A CN B200480029739XA CN 200480029739 A CN200480029739 A CN 200480029739A CN 100521439 C CN100521439 C CN 100521439C
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CN
China
Prior art keywords
bus
circuit
voltage
esd
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB200480029739XA
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English (en)
Chinese (zh)
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CN1868104A (zh
Inventor
迈克尔·斯托金格
詹姆斯·W·米勒
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NXP USA Inc
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Freescale Semiconductor Inc
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Publication of CN1868104A publication Critical patent/CN1868104A/zh
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/20—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess voltage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/20—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess voltage
    • H02H3/22—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess voltage of short duration, e.g. lightning
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/921—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Logic Circuits (AREA)
CNB200480029739XA 2003-10-10 2004-09-22 静电放电保护电路及操作方法 Expired - Fee Related CN100521439C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/684,112 2003-10-10
US10/684,112 US6970336B2 (en) 2003-10-10 2003-10-10 Electrostatic discharge protection circuit and method of operation

Publications (2)

Publication Number Publication Date
CN1868104A CN1868104A (zh) 2006-11-22
CN100521439C true CN100521439C (zh) 2009-07-29

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB200480029739XA Expired - Fee Related CN100521439C (zh) 2003-10-10 2004-09-22 静电放电保护电路及操作方法

Country Status (7)

Country Link
US (1) US6970336B2 (enExample)
EP (1) EP1673844A1 (enExample)
JP (1) JP4727584B2 (enExample)
KR (1) KR101110942B1 (enExample)
CN (1) CN100521439C (enExample)
TW (1) TWI413227B (enExample)
WO (1) WO2005039011A1 (enExample)

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US20060028776A1 (en) * 2004-08-09 2006-02-09 Michael Stockinger Electrostatic discharge protection for an integrated circuit
US7518841B2 (en) * 2004-11-02 2009-04-14 Industrial Technology Research Institute Electrostatic discharge protection for power amplifier in radio frequency integrated circuit
US7446990B2 (en) * 2005-02-11 2008-11-04 Freescale Semiconductor, Inc. I/O cell ESD system
CN101258597A (zh) * 2005-07-08 2008-09-03 Nxp股份有限公司 具有静电放电保护的集成电路
US7639462B2 (en) * 2005-10-25 2009-12-29 Honeywell International Inc. Method and system for reducing transient event effects within an electrostatic discharge power clamp
US7808117B2 (en) * 2006-05-16 2010-10-05 Freescale Semiconductor, Inc. Integrated circuit having pads and input/output (I/O) cells
US20070267748A1 (en) * 2006-05-16 2007-11-22 Tran Tu-Anh N Integrated circuit having pads and input/output (i/o) cells
US7660086B2 (en) * 2006-06-08 2010-02-09 Cypress Semiconductor Corporation Programmable electrostatic discharge (ESD) protection device
US7589945B2 (en) * 2006-08-31 2009-09-15 Freescale Semiconductor, Inc. Distributed electrostatic discharge protection circuit with varying clamp size
JP4917394B2 (ja) * 2006-09-15 2012-04-18 ルネサスエレクトロニクス株式会社 出力回路
WO2008059451A2 (en) * 2006-11-15 2008-05-22 Nxp B.V. Protection circuit with overdrive technique
CN100568659C (zh) * 2006-12-08 2009-12-09 智原科技股份有限公司 静电放电保护电路
KR100996195B1 (ko) 2007-04-05 2010-11-24 주식회사 하이닉스반도체 정전기 방전 보호 장치
WO2008132561A1 (en) * 2007-04-27 2008-11-06 Freescale Semiconductor, Inc. Integrated circuit, electronic device and esd protection therefor
US7777998B2 (en) 2007-09-10 2010-08-17 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor
CN101425799B (zh) * 2007-11-02 2011-04-20 晨星半导体股份有限公司 用以避免nmos组件承受过高电压的保护电路
US7911750B2 (en) * 2008-02-27 2011-03-22 Freescale Semiconductor, Inc. Resistor triggered electrostatic discharge protection
KR101633858B1 (ko) * 2009-02-17 2016-06-28 삼성전자주식회사 패드인터페이스회로 및 패드인터페이스회로 신뢰성 향상방법
US8760827B2 (en) * 2009-04-15 2014-06-24 International Business Machines Corporation Robust ESD protection circuit, method and design structure for tolerant and failsafe designs
CN102474094B (zh) * 2009-08-06 2014-11-12 飞思卡尔半导体公司 具有保护电路的电子装置
JP2011228372A (ja) * 2010-04-16 2011-11-10 Toshiba Corp 半導体集積回路装置
US8456784B2 (en) * 2010-05-03 2013-06-04 Freescale Semiconductor, Inc. Overvoltage protection circuit for an integrated circuit
TWI420770B (zh) * 2010-10-12 2013-12-21 Innolux Corp 具有靜電放電保護的驅動器電路
US8730625B2 (en) * 2011-09-22 2014-05-20 Freescale Semiconductor, Inc. Electrostatic discharge protection circuit for an integrated circuit
KR101885334B1 (ko) * 2012-01-18 2018-08-07 삼성전자 주식회사 정전기 방전 보호 회로
CN103795049B (zh) * 2012-10-29 2017-03-01 台湾积体电路制造股份有限公司 使用i/o焊盘的esd保护电路
US8867180B2 (en) * 2012-11-30 2014-10-21 Tesla Motors, Inc. Dynamic current protection in energy distribution systems
US9362252B2 (en) 2013-03-13 2016-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus of ESD protection in stacked die semiconductor device
US9076656B2 (en) * 2013-05-02 2015-07-07 Freescale Semiconductor, Inc. Electrostatic discharge (ESD) clamp circuit with high effective holding voltage
US9064938B2 (en) * 2013-05-30 2015-06-23 Freescale Semiconductor, Inc. I/O cell ESD system
US9425188B2 (en) 2013-09-26 2016-08-23 Texas Instruments Incorporated Active ESD protection circuit with blocking diode
JP6143690B2 (ja) 2014-03-12 2017-06-07 株式会社東芝 出力回路
US9478529B2 (en) 2014-05-28 2016-10-25 Freescale Semiconductor, Inc. Electrostatic discharge protection system
US9553446B2 (en) 2014-10-31 2017-01-24 Nxp Usa, Inc. Shared ESD circuitry
GB2537916B (en) * 2015-04-30 2017-08-30 Advanced Risc Mach Ltd Power supply clamp
CN205621414U (zh) * 2016-04-26 2016-10-05 京东方科技集团股份有限公司 静电放电电路、阵列基板和显示装置
US10074643B2 (en) 2016-09-22 2018-09-11 Nxp Usa, Inc. Integrated circuit with protection from transient electrical stress events and method therefor
US10320185B2 (en) 2016-09-22 2019-06-11 Nxp Usa, Inc. Integrated circuit with protection from transient electrical stress events and method therefor
JP6828588B2 (ja) 2017-05-22 2021-02-10 株式会社ソシオネクスト 半導体装置
US10811873B2 (en) * 2017-11-28 2020-10-20 Stmicroelectronics International N.V. Power supply clamp for electrostatic discharge (ESD) protection having a circuit for controlling clamp time out behavior
US11004843B2 (en) * 2019-01-18 2021-05-11 Nxp Usa, Inc. Switch control circuit for a power switch with electrostatic discharge (ESD) protection
US11315919B2 (en) 2019-02-05 2022-04-26 Nxp Usa, Inc. Circuit for controlling a stacked snapback clamp
US10930639B2 (en) 2019-02-19 2021-02-23 Nxp Usa, Inc. ESD protection circuit providing multiple detection signals
US11056879B2 (en) 2019-06-12 2021-07-06 Nxp Usa, Inc. Snapback clamps for ESD protection with voltage limited, centralized triggering scheme
US11581729B2 (en) * 2020-05-01 2023-02-14 Cypress Semiconductor Corporation Combined positive and negative voltage electrostatic discharge (ESD) protection clamp with cascoded circuitry
KR102852456B1 (ko) * 2021-01-27 2025-08-29 주식회사 디비하이텍 정전기 보호 회로
US11716073B2 (en) * 2021-04-07 2023-08-01 Mediatek Inc. Chip with pad tracking
US12034000B2 (en) * 2022-03-23 2024-07-09 Nxp B.V. Double IO pad cell including electrostatic discharge protection scheme with reduced latch-up risk
KR20240072440A (ko) 2022-11-16 2024-05-24 삼성디스플레이 주식회사 표시 장치
KR20240120068A (ko) * 2023-01-31 2024-08-07 삼성전자주식회사 반도체 장치

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US5301084A (en) * 1991-08-21 1994-04-05 National Semiconductor Corporation Electrostatic discharge protection for CMOS integrated circuits
US6385021B1 (en) * 2000-04-10 2002-05-07 Motorola, Inc. Electrostatic discharge (ESD) protection circuit
CN1399386A (zh) * 2001-07-27 2003-02-26 旺宏电子股份有限公司 静电放电保护电路

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SUB-MICRON CHIP ESD PROTECTION SCHEMESWHICHAVOID AVALANCHING JUNCTIONS. E. R. Worley, R. Gupta, B. Jones, R. Kjar, C. Nguyen, andM.Tennyson.EOS/ESD SYMPOSIUM,Vol.1995 . 1995 *

Also Published As

Publication number Publication date
US20050078419A1 (en) 2005-04-14
CN1868104A (zh) 2006-11-22
KR101110942B1 (ko) 2012-03-13
TW200525726A (en) 2005-08-01
TWI413227B (zh) 2013-10-21
JP4727584B2 (ja) 2011-07-20
EP1673844A1 (en) 2006-06-28
US6970336B2 (en) 2005-11-29
KR20060122813A (ko) 2006-11-30
JP2007511898A (ja) 2007-05-10
WO2005039011A1 (en) 2005-04-28

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SE01 Entry into force of request for substantive examination
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GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: Texas in the United States

Patentee after: NXP USA, Inc.

Address before: Texas in the United States

Patentee before: FREESCALE SEMICONDUCTOR, Inc.

CP01 Change in the name or title of a patent holder
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090729

CF01 Termination of patent right due to non-payment of annual fee