TWI412119B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI412119B
TWI412119B TW093119217A TW93119217A TWI412119B TW I412119 B TWI412119 B TW I412119B TW 093119217 A TW093119217 A TW 093119217A TW 93119217 A TW93119217 A TW 93119217A TW I412119 B TWI412119 B TW I412119B
Authority
TW
Taiwan
Prior art keywords
conductive
inductor
continuous conductor
semiconductor substrate
dielectric layer
Prior art date
Application number
TW093119217A
Other languages
English (en)
Chinese (zh)
Other versions
TW200509370A (en
Inventor
哈里斯 愛德華
唐尼 史帝芬
Original Assignee
艾基爾系統股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 艾基爾系統股份有限公司 filed Critical 艾基爾系統股份有限公司
Publication of TW200509370A publication Critical patent/TW200509370A/zh
Application granted granted Critical
Publication of TWI412119B publication Critical patent/TWI412119B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041—Printed circuit coils
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F2017/0046—Printed inductances with a conductive path having a bridge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49073—Electromagnet, transformer or inductor by assembling coil and core
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW093119217A 2003-08-22 2004-06-29 半導體裝置 TWI412119B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/646,997 US7075167B2 (en) 2003-08-22 2003-08-22 Spiral inductor formed in a semiconductor substrate

Publications (2)

Publication Number Publication Date
TW200509370A TW200509370A (en) 2005-03-01
TWI412119B true TWI412119B (zh) 2013-10-11

Family

ID=34136607

Family Applications (2)

Application Number Title Priority Date Filing Date
TW093119217A TWI412119B (zh) 2003-08-22 2004-06-29 半導體裝置
TW102102447A TWI418017B (zh) 2003-08-22 2004-06-29 用於形成電感器的方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW102102447A TWI418017B (zh) 2003-08-22 2004-06-29 用於形成電感器的方法

Country Status (7)

Country Link
US (2) US7075167B2 (https=)
EP (2) EP1513170B1 (https=)
JP (2) JP2005072588A (https=)
KR (1) KR101084959B1 (https=)
CN (3) CN1707806B (https=)
SG (1) SG109577A1 (https=)
TW (2) TWI412119B (https=)

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US7075167B2 (en) * 2003-08-22 2006-07-11 Agere Systems Inc. Spiral inductor formed in a semiconductor substrate
US7205632B2 (en) * 2004-04-05 2007-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-scattering attenuator structure for high energy particle radiation into integrated circuits
US7215000B2 (en) * 2004-08-23 2007-05-08 Texas Instruments Incorporated Selectively encased surface metal structures in a semiconductor device
JP2007049115A (ja) * 2005-07-13 2007-02-22 Seiko Epson Corp 半導体装置
GB2440365A (en) * 2006-07-21 2008-01-30 X Fab Uk Ltd A semiconductor device
US7935607B2 (en) * 2007-04-09 2011-05-03 Freescale Semiconductor, Inc. Integrated passive device with a high resistivity substrate and method for forming the same
KR100947933B1 (ko) * 2007-08-28 2010-03-15 주식회사 동부하이텍 인덕터 및 그 제조 방법
CN101442048B (zh) * 2007-11-23 2010-09-08 上海华虹Nec电子有限公司 射频cmos集成电感中的接地环结构
CN101924102B (zh) * 2009-06-15 2013-07-31 慧国(上海)软件科技有限公司 半导体装置
JP2011040882A (ja) * 2009-08-07 2011-02-24 Sony Corp 高周波デバイス
JP2011049397A (ja) * 2009-08-27 2011-03-10 Sony Corp 高周波デバイス
TWI412114B (zh) * 2009-12-31 2013-10-11 日月光半導體製造股份有限公司 半導體封裝結構及其製造方法
TWI436463B (zh) * 2009-12-31 2014-05-01 日月光半導體製造股份有限公司 半導體封裝結構及其製造方法
US8710622B2 (en) * 2011-11-17 2014-04-29 Harris Corporation Defected ground plane inductor
US8580647B2 (en) * 2011-12-19 2013-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Inductors with through VIAS
CN108878117A (zh) * 2014-11-14 2018-11-23 乾坤科技股份有限公司 无基板电子组件及其制造方法
US9484297B2 (en) 2015-03-13 2016-11-01 Globalfoundries Inc. Semiconductor device having non-magnetic single core inductor and method of producing the same
US10075132B2 (en) 2015-03-24 2018-09-11 Nxp Usa, Inc. RF amplifier with conductor-less region underlying filter circuit inductor, and methods of manufacture thereof
US9509251B2 (en) 2015-03-24 2016-11-29 Freescale Semiconductor, Inc. RF amplifier module and methods of manufacture thereof
US9871107B2 (en) * 2015-05-22 2018-01-16 Nxp Usa, Inc. Device with a conductive feature formed over a cavity and method therefor
US9787254B2 (en) 2015-09-23 2017-10-10 Nxp Usa, Inc. Encapsulated semiconductor device package with heatsink opening, and methods of manufacture thereof
US11373803B2 (en) * 2017-08-11 2022-06-28 Applied Materials, Inc. Method of forming a magnetic core on a substrate
US10672704B2 (en) * 2017-11-30 2020-06-02 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device with polygonal inductive device
CN108133101B (zh) * 2017-12-21 2021-09-24 上海华力微电子有限公司 一种电感版图之辅助层及器件参数抽取的方法
US10535635B2 (en) 2018-06-15 2020-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Second semiconductor wafer attached to a first semiconductor wafer with a through hole connected to an inductor

Citations (4)

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US5384274A (en) * 1992-04-06 1995-01-24 Nippon Precision Circuits Inc. Method of making a combined semiconductor device and inductor
US5539241A (en) * 1993-01-29 1996-07-23 The Regents Of The University Of California Monolithic passive component
TW327253B (en) * 1997-05-23 1998-02-21 Vanguard Int Semiconduct Corp The manufacturing method of metallization for IC
TW367623B (en) * 1998-02-20 1999-08-21 Winbond Electronic Corp High Q value inductor and forming method thereof

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US5539241A (en) * 1993-01-29 1996-07-23 The Regents Of The University Of California Monolithic passive component
TW327253B (en) * 1997-05-23 1998-02-21 Vanguard Int Semiconduct Corp The manufacturing method of metallization for IC
TW367623B (en) * 1998-02-20 1999-08-21 Winbond Electronic Corp High Q value inductor and forming method thereof

Also Published As

Publication number Publication date
US7075167B2 (en) 2006-07-11
CN1707806B (zh) 2010-08-18
EP1513170A3 (en) 2005-05-25
US20070107206A1 (en) 2007-05-17
CN101345242A (zh) 2009-01-14
JP2007300143A (ja) 2007-11-15
TW200509370A (en) 2005-03-01
CN101794775A (zh) 2010-08-04
JP2005072588A (ja) 2005-03-17
KR101084959B1 (ko) 2011-11-23
KR20050020707A (ko) 2005-03-04
EP1513170B1 (en) 2014-09-24
EP1830402B1 (en) 2015-06-17
TWI418017B (zh) 2013-12-01
CN1707806A (zh) 2005-12-14
CN101794775B (zh) 2011-12-28
US20050040471A1 (en) 2005-02-24
EP1830402A3 (en) 2007-10-17
EP1513170A2 (en) 2005-03-09
CN101345242B (zh) 2010-07-21
TW201330228A (zh) 2013-07-16
US7381607B2 (en) 2008-06-03
EP1830402A2 (en) 2007-09-05
SG109577A1 (en) 2005-03-30

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