SG109577A1 - A spiral inductor formed in a semiconductor substrate and a method for forming the inductor - Google Patents

A spiral inductor formed in a semiconductor substrate and a method for forming the inductor

Info

Publication number
SG109577A1
SG109577A1 SG200404702A SG200404702A SG109577A1 SG 109577 A1 SG109577 A1 SG 109577A1 SG 200404702 A SG200404702 A SG 200404702A SG 200404702 A SG200404702 A SG 200404702A SG 109577 A1 SG109577 A1 SG 109577A1
Authority
SG
Singapore
Prior art keywords
inductor
forming
semiconductor substrate
spiral
spiral inductor
Prior art date
Application number
SG200404702A
Other languages
English (en)
Inventor
B Harris Edward
W Downey Stephen
Original Assignee
Agere Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Systems Inc filed Critical Agere Systems Inc
Publication of SG109577A1 publication Critical patent/SG109577A1/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/20Inductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type
    • H01F17/0006Printed inductances
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041Printed circuit coils
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497Inductive arrangements or effects of, or between, wiring layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type
    • H01F17/0006Printed inductances
    • H01F2017/0046Printed inductances with a conductive path having a bridge
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903FET configuration adapted for use as static memory cell
    • Y10S257/904FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/4902Electromagnet, transformer or inductor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/4902Electromagnet, transformer or inductor
    • Y10T29/49073Electromagnet, transformer or inductor by assembling coil and core
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155Manufacturing circuit on or in base

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG200404702A 2003-08-22 2004-08-18 A spiral inductor formed in a semiconductor substrate and a method for forming the inductor SG109577A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/646,997 US7075167B2 (en) 2003-08-22 2003-08-22 Spiral inductor formed in a semiconductor substrate

Publications (1)

Publication Number Publication Date
SG109577A1 true SG109577A1 (en) 2005-03-30

Family

ID=34136607

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200404702A SG109577A1 (en) 2003-08-22 2004-08-18 A spiral inductor formed in a semiconductor substrate and a method for forming the inductor

Country Status (7)

Country Link
US (2) US7075167B2 (https=)
EP (2) EP1513170B1 (https=)
JP (2) JP2005072588A (https=)
KR (1) KR101084959B1 (https=)
CN (3) CN1707806B (https=)
SG (1) SG109577A1 (https=)
TW (2) TWI412119B (https=)

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US7205632B2 (en) * 2004-04-05 2007-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-scattering attenuator structure for high energy particle radiation into integrated circuits
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JP2007049115A (ja) * 2005-07-13 2007-02-22 Seiko Epson Corp 半導体装置
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US7935607B2 (en) * 2007-04-09 2011-05-03 Freescale Semiconductor, Inc. Integrated passive device with a high resistivity substrate and method for forming the same
KR100947933B1 (ko) * 2007-08-28 2010-03-15 주식회사 동부하이텍 인덕터 및 그 제조 방법
CN101442048B (zh) * 2007-11-23 2010-09-08 上海华虹Nec电子有限公司 射频cmos集成电感中的接地环结构
CN101924102B (zh) * 2009-06-15 2013-07-31 慧国(上海)软件科技有限公司 半导体装置
JP2011040882A (ja) * 2009-08-07 2011-02-24 Sony Corp 高周波デバイス
JP2011049397A (ja) * 2009-08-27 2011-03-10 Sony Corp 高周波デバイス
TWI412114B (zh) * 2009-12-31 2013-10-11 日月光半導體製造股份有限公司 半導體封裝結構及其製造方法
TWI436463B (zh) * 2009-12-31 2014-05-01 日月光半導體製造股份有限公司 半導體封裝結構及其製造方法
US8710622B2 (en) * 2011-11-17 2014-04-29 Harris Corporation Defected ground plane inductor
US8580647B2 (en) * 2011-12-19 2013-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Inductors with through VIAS
CN108878117A (zh) * 2014-11-14 2018-11-23 乾坤科技股份有限公司 无基板电子组件及其制造方法
US9484297B2 (en) 2015-03-13 2016-11-01 Globalfoundries Inc. Semiconductor device having non-magnetic single core inductor and method of producing the same
US10075132B2 (en) 2015-03-24 2018-09-11 Nxp Usa, Inc. RF amplifier with conductor-less region underlying filter circuit inductor, and methods of manufacture thereof
US9509251B2 (en) 2015-03-24 2016-11-29 Freescale Semiconductor, Inc. RF amplifier module and methods of manufacture thereof
US9871107B2 (en) * 2015-05-22 2018-01-16 Nxp Usa, Inc. Device with a conductive feature formed over a cavity and method therefor
US9787254B2 (en) 2015-09-23 2017-10-10 Nxp Usa, Inc. Encapsulated semiconductor device package with heatsink opening, and methods of manufacture thereof
US11373803B2 (en) * 2017-08-11 2022-06-28 Applied Materials, Inc. Method of forming a magnetic core on a substrate
US10672704B2 (en) * 2017-11-30 2020-06-02 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device with polygonal inductive device
CN108133101B (zh) * 2017-12-21 2021-09-24 上海华力微电子有限公司 一种电感版图之辅助层及器件参数抽取的方法
US10535635B2 (en) 2018-06-15 2020-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Second semiconductor wafer attached to a first semiconductor wafer with a through hole connected to an inductor

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Also Published As

Publication number Publication date
US7075167B2 (en) 2006-07-11
CN1707806B (zh) 2010-08-18
EP1513170A3 (en) 2005-05-25
US20070107206A1 (en) 2007-05-17
CN101345242A (zh) 2009-01-14
JP2007300143A (ja) 2007-11-15
TW200509370A (en) 2005-03-01
CN101794775A (zh) 2010-08-04
JP2005072588A (ja) 2005-03-17
TWI412119B (zh) 2013-10-11
KR101084959B1 (ko) 2011-11-23
KR20050020707A (ko) 2005-03-04
EP1513170B1 (en) 2014-09-24
EP1830402B1 (en) 2015-06-17
TWI418017B (zh) 2013-12-01
CN1707806A (zh) 2005-12-14
CN101794775B (zh) 2011-12-28
US20050040471A1 (en) 2005-02-24
EP1830402A3 (en) 2007-10-17
EP1513170A2 (en) 2005-03-09
CN101345242B (zh) 2010-07-21
TW201330228A (zh) 2013-07-16
US7381607B2 (en) 2008-06-03
EP1830402A2 (en) 2007-09-05

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