JP2005072588A - 半導体基体中に形成されたスパイラル形状インダクタ及びそのインダクタを形成するための方法 - Google Patents

半導体基体中に形成されたスパイラル形状インダクタ及びそのインダクタを形成するための方法 Download PDF

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Publication number
JP2005072588A
JP2005072588A JP2004240186A JP2004240186A JP2005072588A JP 2005072588 A JP2005072588 A JP 2005072588A JP 2004240186 A JP2004240186 A JP 2004240186A JP 2004240186 A JP2004240186 A JP 2004240186A JP 2005072588 A JP2005072588 A JP 2005072588A
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JP
Japan
Prior art keywords
semiconductor device
conductive
semiconductor substrate
inductor
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2004240186A
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English (en)
Japanese (ja)
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JP2005072588A5 (https=
Inventor
Edward B Harris
ビー．ハリス エドワード
Stephen W Downey
ダブリュ．ダウニー スチーヴン
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Agere Systems LLC
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Agere Systems LLC
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Publication date
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Publication of JP2005072588A publication Critical patent/JP2005072588A/ja
Publication of JP2005072588A5 publication Critical patent/JP2005072588A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041—Printed circuit coils
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F2017/0046—Printed inductances with a conductive path having a bridge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49073—Electromagnet, transformer or inductor by assembling coil and core
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2004240186A 2003-08-22 2004-08-20 半導体基体中に形成されたスパイラル形状インダクタ及びそのインダクタを形成するための方法 Pending JP2005072588A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/646,997 US7075167B2 (en) 2003-08-22 2003-08-22 Spiral inductor formed in a semiconductor substrate

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007210590A Division JP2007300143A (ja) 2003-08-22 2007-08-13 半導体基体中に形成されたスパイラル形状インダクタ及びそのインダクタを形成するための方法

Publications (2)

Publication Number Publication Date
JP2005072588A true JP2005072588A (ja) 2005-03-17
JP2005072588A5 JP2005072588A5 (https=) 2007-09-27

Family

ID=34136607

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2004240186A Pending JP2005072588A (ja) 2003-08-22 2004-08-20 半導体基体中に形成されたスパイラル形状インダクタ及びそのインダクタを形成するための方法
JP2007210590A Pending JP2007300143A (ja) 2003-08-22 2007-08-13 半導体基体中に形成されたスパイラル形状インダクタ及びそのインダクタを形成するための方法

Family Applications After (1)

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JP2007210590A Pending JP2007300143A (ja) 2003-08-22 2007-08-13 半導体基体中に形成されたスパイラル形状インダクタ及びそのインダクタを形成するための方法

Country Status (7)

Country Link
US (2) US7075167B2 (https=)
EP (2) EP1513170B1 (https=)
JP (2) JP2005072588A (https=)
KR (1) KR101084959B1 (https=)
CN (3) CN1707806B (https=)
SG (1) SG109577A1 (https=)
TW (2) TWI412119B (https=)

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JP2007049115A (ja) * 2005-07-13 2007-02-22 Seiko Epson Corp 半導体装置
JP2011040882A (ja) * 2009-08-07 2011-02-24 Sony Corp 高周波デバイス

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US7075167B2 (en) * 2003-08-22 2006-07-11 Agere Systems Inc. Spiral inductor formed in a semiconductor substrate
US7205632B2 (en) * 2004-04-05 2007-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-scattering attenuator structure for high energy particle radiation into integrated circuits
US7215000B2 (en) * 2004-08-23 2007-05-08 Texas Instruments Incorporated Selectively encased surface metal structures in a semiconductor device
GB2440365A (en) * 2006-07-21 2008-01-30 X Fab Uk Ltd A semiconductor device
US7935607B2 (en) * 2007-04-09 2011-05-03 Freescale Semiconductor, Inc. Integrated passive device with a high resistivity substrate and method for forming the same
KR100947933B1 (ko) * 2007-08-28 2010-03-15 주식회사 동부하이텍 인덕터 및 그 제조 방법
CN101442048B (zh) * 2007-11-23 2010-09-08 上海华虹Nec电子有限公司 射频cmos集成电感中的接地环结构
CN101924102B (zh) * 2009-06-15 2013-07-31 慧国(上海)软件科技有限公司 半导体装置
JP2011049397A (ja) * 2009-08-27 2011-03-10 Sony Corp 高周波デバイス
TWI412114B (zh) * 2009-12-31 2013-10-11 日月光半導體製造股份有限公司 半導體封裝結構及其製造方法
TWI436463B (zh) * 2009-12-31 2014-05-01 日月光半導體製造股份有限公司 半導體封裝結構及其製造方法
US8710622B2 (en) * 2011-11-17 2014-04-29 Harris Corporation Defected ground plane inductor
US8580647B2 (en) * 2011-12-19 2013-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Inductors with through VIAS
CN108878117A (zh) * 2014-11-14 2018-11-23 乾坤科技股份有限公司 无基板电子组件及其制造方法
US9484297B2 (en) 2015-03-13 2016-11-01 Globalfoundries Inc. Semiconductor device having non-magnetic single core inductor and method of producing the same
US10075132B2 (en) 2015-03-24 2018-09-11 Nxp Usa, Inc. RF amplifier with conductor-less region underlying filter circuit inductor, and methods of manufacture thereof
US9509251B2 (en) 2015-03-24 2016-11-29 Freescale Semiconductor, Inc. RF amplifier module and methods of manufacture thereof
US9871107B2 (en) * 2015-05-22 2018-01-16 Nxp Usa, Inc. Device with a conductive feature formed over a cavity and method therefor
US9787254B2 (en) 2015-09-23 2017-10-10 Nxp Usa, Inc. Encapsulated semiconductor device package with heatsink opening, and methods of manufacture thereof
US11373803B2 (en) * 2017-08-11 2022-06-28 Applied Materials, Inc. Method of forming a magnetic core on a substrate
US10672704B2 (en) * 2017-11-30 2020-06-02 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device with polygonal inductive device
CN108133101B (zh) * 2017-12-21 2021-09-24 上海华力微电子有限公司 一种电感版图之辅助层及器件参数抽取的方法
US10535635B2 (en) 2018-06-15 2020-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Second semiconductor wafer attached to a first semiconductor wafer with a through hole connected to an inductor

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JPH0677407A (ja) * 1992-04-06 1994-03-18 Nippon Precision Circuits Kk 半導体装置
JP2001168288A (ja) * 1999-12-13 2001-06-22 Seiko Epson Corp 半導体装置
JP2002009299A (ja) * 2000-04-17 2002-01-11 Mitsubishi Electric Corp 半導体装置の製造方法
JP2002164512A (ja) * 2000-11-28 2002-06-07 Fujitsu Ltd 半導体装置及びその製造方法
JP2002334806A (ja) * 2001-05-07 2002-11-22 Sony Corp 高周波モジュール装置
JP2004039924A (ja) * 2002-07-04 2004-02-05 Fujitsu Ltd 半導体装置

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JPH0677407A (ja) * 1992-04-06 1994-03-18 Nippon Precision Circuits Kk 半導体装置
JP2001168288A (ja) * 1999-12-13 2001-06-22 Seiko Epson Corp 半導体装置
JP2002009299A (ja) * 2000-04-17 2002-01-11 Mitsubishi Electric Corp 半導体装置の製造方法
JP2002164512A (ja) * 2000-11-28 2002-06-07 Fujitsu Ltd 半導体装置及びその製造方法
JP2002334806A (ja) * 2001-05-07 2002-11-22 Sony Corp 高周波モジュール装置
JP2004039924A (ja) * 2002-07-04 2004-02-05 Fujitsu Ltd 半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007049115A (ja) * 2005-07-13 2007-02-22 Seiko Epson Corp 半導体装置
JP2011040882A (ja) * 2009-08-07 2011-02-24 Sony Corp 高周波デバイス

Also Published As

Publication number Publication date
US7075167B2 (en) 2006-07-11
CN1707806B (zh) 2010-08-18
EP1513170A3 (en) 2005-05-25
US20070107206A1 (en) 2007-05-17
CN101345242A (zh) 2009-01-14
JP2007300143A (ja) 2007-11-15
TW200509370A (en) 2005-03-01
CN101794775A (zh) 2010-08-04
TWI412119B (zh) 2013-10-11
KR101084959B1 (ko) 2011-11-23
KR20050020707A (ko) 2005-03-04
EP1513170B1 (en) 2014-09-24
EP1830402B1 (en) 2015-06-17
TWI418017B (zh) 2013-12-01
CN1707806A (zh) 2005-12-14
CN101794775B (zh) 2011-12-28
US20050040471A1 (en) 2005-02-24
EP1830402A3 (en) 2007-10-17
EP1513170A2 (en) 2005-03-09
CN101345242B (zh) 2010-07-21
TW201330228A (zh) 2013-07-16
US7381607B2 (en) 2008-06-03
EP1830402A2 (en) 2007-09-05
SG109577A1 (en) 2005-03-30

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