KR101084959B1 - 반도체 기판에 형성된 스파이럴 인덕터 및 인덕터 형성 방법 - Google Patents

반도체 기판에 형성된 스파이럴 인덕터 및 인덕터 형성 방법 Download PDF

Info

Publication number
KR101084959B1
KR101084959B1 KR1020040065903A KR20040065903A KR101084959B1 KR 101084959 B1 KR101084959 B1 KR 101084959B1 KR 1020040065903 A KR1020040065903 A KR 1020040065903A KR 20040065903 A KR20040065903 A KR 20040065903A KR 101084959 B1 KR101084959 B1 KR 101084959B1
Authority
KR
South Korea
Prior art keywords
inductor
semiconductor substrate
delete delete
dielectric layer
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020040065903A
Other languages
English (en)
Korean (ko)
Other versions
KR20050020707A (ko
Inventor
해리스에드워드비.
도우니스티븐더블유.
Original Assignee
에이저 시스템즈 인크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이저 시스템즈 인크 filed Critical 에이저 시스템즈 인크
Publication of KR20050020707A publication Critical patent/KR20050020707A/ko
Application granted granted Critical
Publication of KR101084959B1 publication Critical patent/KR101084959B1/ko
Assigned to 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드 reassignment 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드 권리의 전부이전등록 Assignors: 에이저 시스템즈 엘엘시
Assigned to 아바고 테크놀로지스 인터내셔널 세일즈 피티이 리미티드 reassignment 아바고 테크놀로지스 인터내셔널 세일즈 피티이 리미티드 권리의 전부이전등록 Assignors: 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드
Assigned to 벨 세미컨덕터 엘엘씨 reassignment 벨 세미컨덕터 엘엘씨 권리의 전부이전등록 Assignors: 아바고 테크놀로지스 인터내셔널 세일즈 피티이 리미티드
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041—Printed circuit coils
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F2017/0046—Printed inductances with a conductive path having a bridge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49073—Electromagnet, transformer or inductor by assembling coil and core
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020040065903A 2003-08-22 2004-08-20 반도체 기판에 형성된 스파이럴 인덕터 및 인덕터 형성 방법 Expired - Lifetime KR101084959B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/646,997 US7075167B2 (en) 2003-08-22 2003-08-22 Spiral inductor formed in a semiconductor substrate
US10/646,997 2003-08-22

Publications (2)

Publication Number Publication Date
KR20050020707A KR20050020707A (ko) 2005-03-04
KR101084959B1 true KR101084959B1 (ko) 2011-11-23

Family

ID=34136607

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040065903A Expired - Lifetime KR101084959B1 (ko) 2003-08-22 2004-08-20 반도체 기판에 형성된 스파이럴 인덕터 및 인덕터 형성 방법

Country Status (7)

Country Link
US (2) US7075167B2 (https=)
EP (2) EP1513170B1 (https=)
JP (2) JP2005072588A (https=)
KR (1) KR101084959B1 (https=)
CN (3) CN1707806B (https=)
SG (1) SG109577A1 (https=)
TW (2) TWI412119B (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7075167B2 (en) * 2003-08-22 2006-07-11 Agere Systems Inc. Spiral inductor formed in a semiconductor substrate
US7205632B2 (en) * 2004-04-05 2007-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-scattering attenuator structure for high energy particle radiation into integrated circuits
US7215000B2 (en) * 2004-08-23 2007-05-08 Texas Instruments Incorporated Selectively encased surface metal structures in a semiconductor device
JP2007049115A (ja) * 2005-07-13 2007-02-22 Seiko Epson Corp 半導体装置
GB2440365A (en) * 2006-07-21 2008-01-30 X Fab Uk Ltd A semiconductor device
US7935607B2 (en) * 2007-04-09 2011-05-03 Freescale Semiconductor, Inc. Integrated passive device with a high resistivity substrate and method for forming the same
KR100947933B1 (ko) * 2007-08-28 2010-03-15 주식회사 동부하이텍 인덕터 및 그 제조 방법
CN101442048B (zh) * 2007-11-23 2010-09-08 上海华虹Nec电子有限公司 射频cmos集成电感中的接地环结构
CN101924102B (zh) * 2009-06-15 2013-07-31 慧国(上海)软件科技有限公司 半导体装置
JP2011040882A (ja) * 2009-08-07 2011-02-24 Sony Corp 高周波デバイス
JP2011049397A (ja) * 2009-08-27 2011-03-10 Sony Corp 高周波デバイス
TWI412114B (zh) * 2009-12-31 2013-10-11 日月光半導體製造股份有限公司 半導體封裝結構及其製造方法
TWI436463B (zh) * 2009-12-31 2014-05-01 日月光半導體製造股份有限公司 半導體封裝結構及其製造方法
US8710622B2 (en) * 2011-11-17 2014-04-29 Harris Corporation Defected ground plane inductor
US8580647B2 (en) * 2011-12-19 2013-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Inductors with through VIAS
CN108878117A (zh) * 2014-11-14 2018-11-23 乾坤科技股份有限公司 无基板电子组件及其制造方法
US9484297B2 (en) 2015-03-13 2016-11-01 Globalfoundries Inc. Semiconductor device having non-magnetic single core inductor and method of producing the same
US10075132B2 (en) 2015-03-24 2018-09-11 Nxp Usa, Inc. RF amplifier with conductor-less region underlying filter circuit inductor, and methods of manufacture thereof
US9509251B2 (en) 2015-03-24 2016-11-29 Freescale Semiconductor, Inc. RF amplifier module and methods of manufacture thereof
US9871107B2 (en) * 2015-05-22 2018-01-16 Nxp Usa, Inc. Device with a conductive feature formed over a cavity and method therefor
US9787254B2 (en) 2015-09-23 2017-10-10 Nxp Usa, Inc. Encapsulated semiconductor device package with heatsink opening, and methods of manufacture thereof
US11373803B2 (en) * 2017-08-11 2022-06-28 Applied Materials, Inc. Method of forming a magnetic core on a substrate
US10672704B2 (en) * 2017-11-30 2020-06-02 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device with polygonal inductive device
CN108133101B (zh) * 2017-12-21 2021-09-24 上海华力微电子有限公司 一种电感版图之辅助层及器件参数抽取的方法
US10535635B2 (en) 2018-06-15 2020-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Second semiconductor wafer attached to a first semiconductor wafer with a through hole connected to an inductor

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227659A (en) * 1990-06-08 1993-07-13 Trustees Of Boston University Integrated circuit inductor
JPH0677407A (ja) * 1992-04-06 1994-03-18 Nippon Precision Circuits Kk 半導体装置
CA2124197A1 (en) * 1992-09-24 1994-03-31 Robert F. Mcclanahan Dielectric vias within multi-layer 3-dimensional structural/substrates
WO1994017558A1 (en) * 1993-01-29 1994-08-04 The Regents Of The University Of California Monolithic passive component
US5370766A (en) * 1993-08-16 1994-12-06 California Micro Devices Methods for fabrication of thin film inductors, inductor networks and integration with other passive and active devices
US5446311A (en) * 1994-09-16 1995-08-29 International Business Machines Corporation High-Q inductors in silicon technology without expensive metalization
JP2904086B2 (ja) * 1995-12-27 1999-06-14 日本電気株式会社 半導体装置およびその製造方法
US6492705B1 (en) * 1996-06-04 2002-12-10 Intersil Corporation Integrated circuit air bridge structures and methods of fabricating same
US5736749A (en) * 1996-11-19 1998-04-07 Lucent Technologies Inc. Integrated circuit device with inductor incorporated therein
TW327253B (en) * 1997-05-23 1998-02-21 Vanguard Int Semiconduct Corp The manufacturing method of metallization for IC
US6160303A (en) * 1997-08-29 2000-12-12 Texas Instruments Incorporated Monolithic inductor with guard rings
US6153489A (en) * 1997-12-22 2000-11-28 Electronics And Telecommunications Research Institute Fabrication method of inductor devices using a substrate conversion technique
TW363278B (en) * 1998-01-16 1999-07-01 Winbond Electronics Corp Preparation method for semiconductor to increase the inductive resonance frequency and Q value
TW367623B (en) * 1998-02-20 1999-08-21 Winbond Electronic Corp High Q value inductor and forming method thereof
US6025261A (en) * 1998-04-29 2000-02-15 Micron Technology, Inc. Method for making high-Q inductive elements
JPH11354330A (ja) 1998-06-08 1999-12-24 Mitsubishi Materials Corp 積層チップ部品およびその使用方法
US6426267B2 (en) * 1998-06-19 2002-07-30 Winbond Electronics Corp. Method for fabricating high-Q inductance device in monolithic technology
JP2000022085A (ja) * 1998-06-29 2000-01-21 Toshiba Corp 半導体装置及びその製造方法
US6249191B1 (en) * 1998-11-23 2001-06-19 Micron Technology, Inc. Monolithic integrated circuit oscillators, complementary metal oxide semiconductor (CMOS) voltage-controlled oscillators, integrated circuit oscillators, oscillator-forming methods, and oscillation methods
US6083802A (en) * 1998-12-31 2000-07-04 Winbond Electronics Corporation Method for forming an inductor
US6310387B1 (en) * 1999-05-03 2001-10-30 Silicon Wave, Inc. Integrated circuit inductor with high self-resonance frequency
US6140197A (en) * 1999-08-30 2000-10-31 Chartered Semiconductor Manufacturing Ltd. Method of making spiral-type RF inductors having a high quality factor (Q)
JP2001168288A (ja) * 1999-12-13 2001-06-22 Seiko Epson Corp 半導体装置
US6503838B1 (en) * 1999-12-31 2003-01-07 Texas Instruments Incorporated Integrated circuit isolation of functionally distinct RF circuits
JP2001223331A (ja) * 2000-02-07 2001-08-17 Sony Corp 半導体装置及びその製造方法
US6800533B1 (en) 2000-03-06 2004-10-05 Chartered Semiconductor Manufacturing Ltd. Integrated vertical spiral inductor on semiconductor material
JP2002009299A (ja) * 2000-04-17 2002-01-11 Mitsubishi Electric Corp 半導体装置の製造方法
US6429504B1 (en) * 2000-05-16 2002-08-06 Tyco Electronics Corporation Multilayer spiral inductor and integrated circuits incorporating the same
US6420773B1 (en) * 2000-10-04 2002-07-16 Winbond Electronics Corp. Multi-level spiral inductor structure having high inductance (L) and high quality factor (Q)
JP2002164512A (ja) * 2000-11-28 2002-06-07 Fujitsu Ltd 半導体装置及びその製造方法
US6534843B2 (en) * 2001-02-10 2003-03-18 International Business Machines Corporation High Q inductor with faraday shield and dielectric well buried in substrate
US6712983B2 (en) * 2001-04-12 2004-03-30 Memsic, Inc. Method of etching a deep trench in a substrate and method of fabricating on-chip devices and micro-machined structures using the same
JP3666411B2 (ja) * 2001-05-07 2005-06-29 ソニー株式会社 高周波モジュール装置
JP4355128B2 (ja) * 2002-07-04 2009-10-28 富士通マイクロエレクトロニクス株式会社 半導体装置およびその製造方法
US7075167B2 (en) * 2003-08-22 2006-07-11 Agere Systems Inc. Spiral inductor formed in a semiconductor substrate

Also Published As

Publication number Publication date
US7075167B2 (en) 2006-07-11
CN1707806B (zh) 2010-08-18
EP1513170A3 (en) 2005-05-25
US20070107206A1 (en) 2007-05-17
CN101345242A (zh) 2009-01-14
JP2007300143A (ja) 2007-11-15
TW200509370A (en) 2005-03-01
CN101794775A (zh) 2010-08-04
JP2005072588A (ja) 2005-03-17
TWI412119B (zh) 2013-10-11
KR20050020707A (ko) 2005-03-04
EP1513170B1 (en) 2014-09-24
EP1830402B1 (en) 2015-06-17
TWI418017B (zh) 2013-12-01
CN1707806A (zh) 2005-12-14
CN101794775B (zh) 2011-12-28
US20050040471A1 (en) 2005-02-24
EP1830402A3 (en) 2007-10-17
EP1513170A2 (en) 2005-03-09
CN101345242B (zh) 2010-07-21
TW201330228A (zh) 2013-07-16
US7381607B2 (en) 2008-06-03
EP1830402A2 (en) 2007-09-05
SG109577A1 (en) 2005-03-30

Similar Documents

Publication Publication Date Title
KR101084959B1 (ko) 반도체 기판에 형성된 스파이럴 인덕터 및 인덕터 형성 방법
JP4948756B2 (ja) 集積回路内に形成されたインダクタ及びその製造方法
US7969274B2 (en) Method to improve inductance with a high-permeability slotted plate core in an integrated circuit
US6870456B2 (en) Integrated transformer
US7791447B2 (en) Integrated transformer
CN1826670B (zh) 用于具有最小图案密度要求的半导体技术的电感和电容元件
EP1267391B1 (en) A method to fabricate RF inductors with minimum area
JP4584533B2 (ja) 半導体基板中に形成された薄膜多層高ｑトランスフォーマ
US6924725B2 (en) Coil on a semiconductor substrate and method for its production
US8004061B1 (en) Conductive trace with reduced RF impedance resulting from the skin effect

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20040820

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20090820

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20040820

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20110107

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20111028

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20111114

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20111115

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20141023

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20141023

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20181112

Year of fee payment: 8

PR1001 Payment of annual fee

Payment date: 20181112

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20211026

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 20221025

Start annual number: 12

End annual number: 12

PR1001 Payment of annual fee

Payment date: 20231023

Start annual number: 13

End annual number: 13

PC1801 Expiration of term

Termination date: 20250220

Termination category: Expiration of duration