CN1707806B - 在半导体衬底中形成的螺旋电感以及形成该电感的方法 - Google Patents

在半导体衬底中形成的螺旋电感以及形成该电感的方法 Download PDF

Info

Publication number
CN1707806B
CN1707806B CN2004100558476A CN200410055847A CN1707806B CN 1707806 B CN1707806 B CN 1707806B CN 2004100558476 A CN2004100558476 A CN 2004100558476A CN 200410055847 A CN200410055847 A CN 200410055847A CN 1707806 B CN1707806 B CN 1707806B
Authority
CN
China
Prior art keywords
semiconductor substrate
inductor
lead
substrate
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2004100558476A
Other languages
English (en)
Chinese (zh)
Other versions
CN1707806A (zh
Inventor
爱德华·B·哈里斯
斯蒂芬·W·唐尼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bell Semiconductor LLC
Original Assignee
Agere Systems LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Systems LLC filed Critical Agere Systems LLC
Publication of CN1707806A publication Critical patent/CN1707806A/zh
Application granted granted Critical
Publication of CN1707806B publication Critical patent/CN1707806B/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041—Printed circuit coils
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F2017/0046—Printed inductances with a conductive path having a bridge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49073—Electromagnet, transformer or inductor by assembling coil and core
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN2004100558476A 2003-08-22 2004-08-04 在半导体衬底中形成的螺旋电感以及形成该电感的方法 Expired - Lifetime CN1707806B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/646,997 US7075167B2 (en) 2003-08-22 2003-08-22 Spiral inductor formed in a semiconductor substrate
US10/646,997 2003-08-22

Related Child Applications (2)

Application Number Title Priority Date Filing Date
CN200810210288XA Division CN101345242B (zh) 2003-08-22 2004-08-04 在半导体衬底中形成的螺旋电感以及形成该电感的方法
CN201010115825XA Division CN101794775B (zh) 2003-08-22 2004-08-04 在半导体衬底中形成的螺旋电感以及形成该电感的方法

Publications (2)

Publication Number Publication Date
CN1707806A CN1707806A (zh) 2005-12-14
CN1707806B true CN1707806B (zh) 2010-08-18

Family

ID=34136607

Family Applications (3)

Application Number Title Priority Date Filing Date
CN2004100558476A Expired - Lifetime CN1707806B (zh) 2003-08-22 2004-08-04 在半导体衬底中形成的螺旋电感以及形成该电感的方法
CN201010115825XA Expired - Lifetime CN101794775B (zh) 2003-08-22 2004-08-04 在半导体衬底中形成的螺旋电感以及形成该电感的方法
CN200810210288XA Expired - Lifetime CN101345242B (zh) 2003-08-22 2004-08-04 在半导体衬底中形成的螺旋电感以及形成该电感的方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN201010115825XA Expired - Lifetime CN101794775B (zh) 2003-08-22 2004-08-04 在半导体衬底中形成的螺旋电感以及形成该电感的方法
CN200810210288XA Expired - Lifetime CN101345242B (zh) 2003-08-22 2004-08-04 在半导体衬底中形成的螺旋电感以及形成该电感的方法

Country Status (7)

Country Link
US (2) US7075167B2 (https=)
EP (2) EP1513170B1 (https=)
JP (2) JP2005072588A (https=)
KR (1) KR101084959B1 (https=)
CN (3) CN1707806B (https=)
SG (1) SG109577A1 (https=)
TW (2) TWI412119B (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7075167B2 (en) * 2003-08-22 2006-07-11 Agere Systems Inc. Spiral inductor formed in a semiconductor substrate
US7205632B2 (en) * 2004-04-05 2007-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-scattering attenuator structure for high energy particle radiation into integrated circuits
US7215000B2 (en) * 2004-08-23 2007-05-08 Texas Instruments Incorporated Selectively encased surface metal structures in a semiconductor device
JP2007049115A (ja) * 2005-07-13 2007-02-22 Seiko Epson Corp 半導体装置
GB2440365A (en) * 2006-07-21 2008-01-30 X Fab Uk Ltd A semiconductor device
US7935607B2 (en) * 2007-04-09 2011-05-03 Freescale Semiconductor, Inc. Integrated passive device with a high resistivity substrate and method for forming the same
KR100947933B1 (ko) * 2007-08-28 2010-03-15 주식회사 동부하이텍 인덕터 및 그 제조 방법
CN101442048B (zh) * 2007-11-23 2010-09-08 上海华虹Nec电子有限公司 射频cmos集成电感中的接地环结构
CN101924102B (zh) * 2009-06-15 2013-07-31 慧国(上海)软件科技有限公司 半导体装置
JP2011040882A (ja) * 2009-08-07 2011-02-24 Sony Corp 高周波デバイス
JP2011049397A (ja) * 2009-08-27 2011-03-10 Sony Corp 高周波デバイス
TWI412114B (zh) * 2009-12-31 2013-10-11 日月光半導體製造股份有限公司 半導體封裝結構及其製造方法
TWI436463B (zh) * 2009-12-31 2014-05-01 日月光半導體製造股份有限公司 半導體封裝結構及其製造方法
US8710622B2 (en) * 2011-11-17 2014-04-29 Harris Corporation Defected ground plane inductor
US8580647B2 (en) * 2011-12-19 2013-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Inductors with through VIAS
CN108878117A (zh) * 2014-11-14 2018-11-23 乾坤科技股份有限公司 无基板电子组件及其制造方法
US9484297B2 (en) 2015-03-13 2016-11-01 Globalfoundries Inc. Semiconductor device having non-magnetic single core inductor and method of producing the same
US10075132B2 (en) 2015-03-24 2018-09-11 Nxp Usa, Inc. RF amplifier with conductor-less region underlying filter circuit inductor, and methods of manufacture thereof
US9509251B2 (en) 2015-03-24 2016-11-29 Freescale Semiconductor, Inc. RF amplifier module and methods of manufacture thereof
US9871107B2 (en) * 2015-05-22 2018-01-16 Nxp Usa, Inc. Device with a conductive feature formed over a cavity and method therefor
US9787254B2 (en) 2015-09-23 2017-10-10 Nxp Usa, Inc. Encapsulated semiconductor device package with heatsink opening, and methods of manufacture thereof
US11373803B2 (en) * 2017-08-11 2022-06-28 Applied Materials, Inc. Method of forming a magnetic core on a substrate
US10672704B2 (en) * 2017-11-30 2020-06-02 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device with polygonal inductive device
CN108133101B (zh) * 2017-12-21 2021-09-24 上海华力微电子有限公司 一种电感版图之辅助层及器件参数抽取的方法
US10535635B2 (en) 2018-06-15 2020-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Second semiconductor wafer attached to a first semiconductor wafer with a through hole connected to an inductor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6429504B1 (en) * 2000-05-16 2002-08-06 Tyco Electronics Corporation Multilayer spiral inductor and integrated circuits incorporating the same
US6503838B1 (en) * 1999-12-31 2003-01-07 Texas Instruments Incorporated Integrated circuit isolation of functionally distinct RF circuits

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227659A (en) * 1990-06-08 1993-07-13 Trustees Of Boston University Integrated circuit inductor
JPH0677407A (ja) * 1992-04-06 1994-03-18 Nippon Precision Circuits Kk 半導体装置
CA2124197A1 (en) * 1992-09-24 1994-03-31 Robert F. Mcclanahan Dielectric vias within multi-layer 3-dimensional structural/substrates
WO1994017558A1 (en) * 1993-01-29 1994-08-04 The Regents Of The University Of California Monolithic passive component
US5370766A (en) * 1993-08-16 1994-12-06 California Micro Devices Methods for fabrication of thin film inductors, inductor networks and integration with other passive and active devices
US5446311A (en) * 1994-09-16 1995-08-29 International Business Machines Corporation High-Q inductors in silicon technology without expensive metalization
JP2904086B2 (ja) * 1995-12-27 1999-06-14 日本電気株式会社 半導体装置およびその製造方法
US6492705B1 (en) * 1996-06-04 2002-12-10 Intersil Corporation Integrated circuit air bridge structures and methods of fabricating same
US5736749A (en) * 1996-11-19 1998-04-07 Lucent Technologies Inc. Integrated circuit device with inductor incorporated therein
TW327253B (en) * 1997-05-23 1998-02-21 Vanguard Int Semiconduct Corp The manufacturing method of metallization for IC
US6160303A (en) * 1997-08-29 2000-12-12 Texas Instruments Incorporated Monolithic inductor with guard rings
US6153489A (en) * 1997-12-22 2000-11-28 Electronics And Telecommunications Research Institute Fabrication method of inductor devices using a substrate conversion technique
TW363278B (en) * 1998-01-16 1999-07-01 Winbond Electronics Corp Preparation method for semiconductor to increase the inductive resonance frequency and Q value
TW367623B (en) * 1998-02-20 1999-08-21 Winbond Electronic Corp High Q value inductor and forming method thereof
US6025261A (en) * 1998-04-29 2000-02-15 Micron Technology, Inc. Method for making high-Q inductive elements
JPH11354330A (ja) 1998-06-08 1999-12-24 Mitsubishi Materials Corp 積層チップ部品およびその使用方法
US6426267B2 (en) * 1998-06-19 2002-07-30 Winbond Electronics Corp. Method for fabricating high-Q inductance device in monolithic technology
JP2000022085A (ja) * 1998-06-29 2000-01-21 Toshiba Corp 半導体装置及びその製造方法
US6249191B1 (en) * 1998-11-23 2001-06-19 Micron Technology, Inc. Monolithic integrated circuit oscillators, complementary metal oxide semiconductor (CMOS) voltage-controlled oscillators, integrated circuit oscillators, oscillator-forming methods, and oscillation methods
US6083802A (en) * 1998-12-31 2000-07-04 Winbond Electronics Corporation Method for forming an inductor
US6310387B1 (en) * 1999-05-03 2001-10-30 Silicon Wave, Inc. Integrated circuit inductor with high self-resonance frequency
US6140197A (en) * 1999-08-30 2000-10-31 Chartered Semiconductor Manufacturing Ltd. Method of making spiral-type RF inductors having a high quality factor (Q)
JP2001168288A (ja) * 1999-12-13 2001-06-22 Seiko Epson Corp 半導体装置
JP2001223331A (ja) * 2000-02-07 2001-08-17 Sony Corp 半導体装置及びその製造方法
US6800533B1 (en) 2000-03-06 2004-10-05 Chartered Semiconductor Manufacturing Ltd. Integrated vertical spiral inductor on semiconductor material
JP2002009299A (ja) * 2000-04-17 2002-01-11 Mitsubishi Electric Corp 半導体装置の製造方法
US6420773B1 (en) * 2000-10-04 2002-07-16 Winbond Electronics Corp. Multi-level spiral inductor structure having high inductance (L) and high quality factor (Q)
JP2002164512A (ja) * 2000-11-28 2002-06-07 Fujitsu Ltd 半導体装置及びその製造方法
US6534843B2 (en) * 2001-02-10 2003-03-18 International Business Machines Corporation High Q inductor with faraday shield and dielectric well buried in substrate
US6712983B2 (en) * 2001-04-12 2004-03-30 Memsic, Inc. Method of etching a deep trench in a substrate and method of fabricating on-chip devices and micro-machined structures using the same
JP3666411B2 (ja) * 2001-05-07 2005-06-29 ソニー株式会社 高周波モジュール装置
JP4355128B2 (ja) * 2002-07-04 2009-10-28 富士通マイクロエレクトロニクス株式会社 半導体装置およびその製造方法
US7075167B2 (en) * 2003-08-22 2006-07-11 Agere Systems Inc. Spiral inductor formed in a semiconductor substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6503838B1 (en) * 1999-12-31 2003-01-07 Texas Instruments Incorporated Integrated circuit isolation of functionally distinct RF circuits
US6429504B1 (en) * 2000-05-16 2002-08-06 Tyco Electronics Corporation Multilayer spiral inductor and integrated circuits incorporating the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
US 6503838 B1,附图12、说明书第1栏第12-16行、第4栏第3行－第5栏第55行.

Also Published As

Publication number Publication date
US7075167B2 (en) 2006-07-11
EP1513170A3 (en) 2005-05-25
US20070107206A1 (en) 2007-05-17
CN101345242A (zh) 2009-01-14
JP2007300143A (ja) 2007-11-15
TW200509370A (en) 2005-03-01
CN101794775A (zh) 2010-08-04
JP2005072588A (ja) 2005-03-17
TWI412119B (zh) 2013-10-11
KR101084959B1 (ko) 2011-11-23
KR20050020707A (ko) 2005-03-04
EP1513170B1 (en) 2014-09-24
EP1830402B1 (en) 2015-06-17
TWI418017B (zh) 2013-12-01
CN1707806A (zh) 2005-12-14
CN101794775B (zh) 2011-12-28
US20050040471A1 (en) 2005-02-24
EP1830402A3 (en) 2007-10-17
EP1513170A2 (en) 2005-03-09
CN101345242B (zh) 2010-07-21
TW201330228A (zh) 2013-07-16
US7381607B2 (en) 2008-06-03
EP1830402A2 (en) 2007-09-05
SG109577A1 (en) 2005-03-30

Similar Documents

Publication Publication Date Title
CN1707806B (zh) 在半导体衬底中形成的螺旋电感以及形成该电感的方法
JP4948756B2 (ja) 集積回路内に形成されたインダクタ及びその製造方法
US6870456B2 (en) Integrated transformer
US7791447B2 (en) Integrated transformer
CN1826670B (zh) 用于具有最小图案密度要求的半导体技术的电感和电容元件
US6815220B2 (en) Magnetic layer processing
US7978043B2 (en) Semiconductor device
US8531002B2 (en) Apparatus and method for wafer level fabrication of high value inductors on semiconductor integrated circuits

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: AGERE SYSTEMS GUARDIAN CORP.

Free format text: FORMER NAME: EGREE SYSTEM CO. LTD.

CP03 Change of name, title or address

Address after: Delaware

Patentee after: Agere Systems Inc.

Address before: New jersey, USA

Patentee before: AGERE SYSTEMS Inc.

C41 Transfer of patent application or patent right or utility model
C56 Change in the name or address of the patentee
CP02 Change in the address of a patent holder

Address after: American Pennsylvania

Patentee after: Agere Systems Inc.

Address before: Delaware

Patentee before: Agere Systems Inc.

TR01 Transfer of patent right

Effective date of registration: 20160906

Address after: Singapore Singapore

Patentee after: Avago Technologies General IP (Singapore) Pte. Ltd.

Address before: American Pennsylvania

Patentee before: Agere Systems Inc.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20200123

Address after: Illinois, USA

Patentee after: Bell Semiconductor Co.,Ltd.

Address before: Singapore City

Patentee before: Avago Technologies General IP (Singapore) Pte. Ltd.

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20100818