CN1826670B - 用于具有最小图案密度要求的半导体技术的电感和电容元件 - Google Patents
用于具有最小图案密度要求的半导体技术的电感和电容元件 Download PDFInfo
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- CN1826670B CN1826670B CN200480021000.4A CN200480021000A CN1826670B CN 1826670 B CN1826670 B CN 1826670B CN 200480021000 A CN200480021000 A CN 200480021000A CN 1826670 B CN1826670 B CN 1826670B
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- 241000254171 Curculionidae Species 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F2017/008—Electric or magnetic shielding of printed inductances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
金属5 | 电感器层 |
金属4 | 瓦面结构图案 |
金属3 | 瓦面结构图案 |
金属2 | 瓦面结构图案 |
金属1 | 瓦面结构图案 |
硅化的多晶硅 | 接地屏蔽层 |
金属5 | 电感器层 |
金属4 | 瓦面结构图案层 |
金属3 | 瓦面结构图案层 |
金属2 | 瓦面结构图案层 |
金属1 | 屏蔽层 |
多晶硅(poly) | 构图的可变电容器 |
金属9 | 电感器层 |
金属8 | 瓦面结构图案层 |
金属7 | 瓦面结构图案层 |
金属6 | 瓦面结构图案层 |
金属5 | 屏蔽层 |
金属4 | 构图的电容器层 |
金属3 | 构图的电容器层 |
金属2 | 构图的电容器层 |
金属1 | 屏蔽层 |
多晶硅 |
Claims (16)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03102261.9 | 2003-07-23 | ||
EP03102261 | 2003-07-23 | ||
PCT/IB2004/051234 WO2005008695A2 (en) | 2003-07-23 | 2004-07-15 | Inductive and capacitive elements for semiconductor technologies with minimum pattern density requirements |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1826670A CN1826670A (zh) | 2006-08-30 |
CN1826670B true CN1826670B (zh) | 2012-12-05 |
Family
ID=34072677
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200480021000.4A Expired - Fee Related CN1826670B (zh) | 2003-07-23 | 2004-07-15 | 用于具有最小图案密度要求的半导体技术的电感和电容元件 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8653926B2 (zh) |
EP (1) | EP1652199A2 (zh) |
JP (1) | JP2006528837A (zh) |
CN (1) | CN1826670B (zh) |
TW (1) | TW200519979A (zh) |
WO (1) | WO2005008695A2 (zh) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4908035B2 (ja) * | 2006-03-30 | 2012-04-04 | 株式会社東芝 | 半導体集積回路 |
US7928539B2 (en) * | 2007-01-29 | 2011-04-19 | Renesas Electronics Corporation | Semiconductor device |
JP5180625B2 (ja) * | 2007-03-12 | 2013-04-10 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
GB2464542A (en) * | 2008-10-21 | 2010-04-28 | Cambridge Silicon Radio Ltd | Interdigitised metal on metal capacitor |
CN102576605B (zh) * | 2009-11-17 | 2016-01-20 | 马维尔国际贸易有限公司 | 接地屏蔽电容器 |
KR101133397B1 (ko) * | 2010-04-05 | 2012-04-09 | 삼성전기주식회사 | 평면형 트랜스포머 및 이의 제조 방법 |
US8836078B2 (en) | 2011-08-18 | 2014-09-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Vertically oriented inductor within interconnect structures and capacitor structure thereof |
US8791784B2 (en) | 2011-08-18 | 2014-07-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Vertically oriented semiconductor device and shielding structure thereof |
US8675368B2 (en) | 2011-08-18 | 2014-03-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Vertically oriented semiconductor device and shielding structure thereof |
US8809956B2 (en) * | 2011-10-13 | 2014-08-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Vertically oriented semiconductor device and shielding structure thereof |
CN102412230B (zh) * | 2011-11-28 | 2014-04-16 | 上海华虹宏力半导体制造有限公司 | 用于射频工艺中的电感地屏蔽结构 |
CN102738124B (zh) * | 2012-06-29 | 2015-05-13 | 杭州电子科技大学 | 一种分形图案接地屏蔽结构 |
CN102738127B (zh) * | 2012-06-29 | 2015-05-20 | 杭州电子科技大学 | 分形pgs结构 |
CN102738125B (zh) * | 2012-06-29 | 2015-01-28 | 杭州电子科技大学 | 新型的分形pfs结构 |
US9214269B2 (en) * | 2012-12-10 | 2015-12-15 | Texas Instruments Incorporated | IC rectangular inductor with perpendicular center and side shield traces |
US9551758B2 (en) | 2012-12-27 | 2017-01-24 | Duracell U.S. Operations, Inc. | Remote sensing of remaining battery capacity using on-battery circuitry |
US9478850B2 (en) | 2013-05-23 | 2016-10-25 | Duracell U.S. Operations, Inc. | Omni-directional antenna for a cylindrical body |
CN104241242B (zh) * | 2013-06-09 | 2017-12-29 | 中芯国际集成电路制造(上海)有限公司 | 接地屏蔽结构及半导体器件 |
US9726763B2 (en) | 2013-06-21 | 2017-08-08 | Duracell U.S. Operations, Inc. | Systems and methods for remotely determining a battery characteristic |
CN104934408B (zh) * | 2014-03-20 | 2017-11-24 | 中芯国际集成电路制造(上海)有限公司 | 一种具有金属填充物结构的电感器 |
US9646759B1 (en) * | 2014-04-11 | 2017-05-09 | Altera Corporation | LC tank circuitry with shielding structures |
US9882250B2 (en) | 2014-05-30 | 2018-01-30 | Duracell U.S. Operations, Inc. | Indicator circuit decoupled from a ground plane |
US10297875B2 (en) | 2015-09-01 | 2019-05-21 | Duracell U.S. Operations, Inc. | Battery including an on-cell indicator |
US10644697B2 (en) | 2016-02-11 | 2020-05-05 | Texas Instruments Incorporated | Material-discernment proximity sensor |
DE102016110425B4 (de) * | 2016-06-06 | 2023-07-20 | X-Fab Semiconductor Foundries Gmbh | Halbleitertransformator |
US10818979B2 (en) | 2016-11-01 | 2020-10-27 | Duracell U.S. Operations, Inc. | Single sided reusable battery indicator |
US10483634B2 (en) | 2016-11-01 | 2019-11-19 | Duracell U.S. Operations, Inc. | Positive battery terminal antenna ground plane |
US10151802B2 (en) | 2016-11-01 | 2018-12-11 | Duracell U.S. Operations, Inc. | Reusable battery indicator with electrical lock and key |
US10608293B2 (en) | 2016-11-01 | 2020-03-31 | Duracell U.S. Operations, Inc. | Dual sided reusable battery indicator |
US11024891B2 (en) | 2016-11-01 | 2021-06-01 | Duracell U.S. Operations, Inc. | Reusable battery indicator with lock and key mechanism |
US10790244B2 (en) | 2017-09-29 | 2020-09-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
US10643985B2 (en) | 2017-12-15 | 2020-05-05 | Qualcomm Incorporated | Capacitor array overlapped by on-chip inductor/transformer |
US10600731B2 (en) * | 2018-02-20 | 2020-03-24 | Qualcomm Incorporated | Folded metal-oxide-metal capacitor overlapped by on-chip inductor/transformer |
US11004589B2 (en) * | 2018-04-27 | 2021-05-11 | Realtek Semiconductor Corp. | High-Q integrated inductor and method thereof |
US10658973B2 (en) * | 2018-04-30 | 2020-05-19 | International Business Machines Corporation | Reconfigurable allocation of VNCAP inter-layer vias for co-tuning of L and C in LC tank |
US20220037457A1 (en) * | 2020-07-29 | 2022-02-03 | Silicon Laboratories Inc. | Ensuring minimum density compliance in integrated circuit inductors |
US11837754B2 (en) | 2020-12-30 | 2023-12-05 | Duracell U.S. Operations, Inc. | Magnetic battery cell connection mechanism |
DE102021108849A1 (de) * | 2021-04-09 | 2022-10-13 | Marquardt Gmbh | Sensoreinrichtung für ein Kraftfahrzeug |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06326106A (ja) | 1993-03-18 | 1994-11-25 | Sony Corp | ダミーパターンの形成方法 |
WO1998050956A1 (en) | 1997-05-02 | 1998-11-12 | The Board Of Trustees Of The Leland Stanford Junior University | Patterned ground shields for integrated circuit inductors |
US6310378B1 (en) | 1997-12-24 | 2001-10-30 | Philips Electronics North American Corporation | High voltage thin film transistor with improved on-state characteristics and method for making same |
JP3351377B2 (ja) | 1999-03-12 | 2002-11-25 | 日本電気株式会社 | 高周波回路装置 |
US6310387B1 (en) | 1999-05-03 | 2001-10-30 | Silicon Wave, Inc. | Integrated circuit inductor with high self-resonance frequency |
KR100326202B1 (ko) * | 1999-08-19 | 2002-02-27 | 구본준, 론 위라하디락사 | 액정 표시소자와 그의 에칭 포인트 검출방법 |
JP3488164B2 (ja) * | 2000-02-14 | 2004-01-19 | Necエレクトロニクス株式会社 | 半導体装置 |
JP2002110908A (ja) * | 2000-09-28 | 2002-04-12 | Toshiba Corp | スパイラルインダクタおよびこれを備える半導体集積回路装置の製造方法 |
JP2002158278A (ja) * | 2000-11-20 | 2002-05-31 | Hitachi Ltd | 半導体装置およびその製造方法ならびに設計方法 |
US6593838B2 (en) | 2000-12-19 | 2003-07-15 | Atheros Communications Inc. | Planar inductor with segmented conductive plane |
US6489663B2 (en) * | 2001-01-02 | 2002-12-03 | International Business Machines Corporation | Spiral inductor semiconducting device with grounding strips and conducting vias |
US6362012B1 (en) | 2001-03-05 | 2002-03-26 | Taiwan Semiconductor Manufacturing Company | Structure of merged vertical capacitor inside spiral conductor for RF and mixed-signal applications |
JP2002373896A (ja) | 2001-06-15 | 2002-12-26 | Mitsubishi Electric Corp | 半導体装置 |
-
2004
- 2004-07-15 US US10/564,582 patent/US8653926B2/en active Active
- 2004-07-15 JP JP2006520960A patent/JP2006528837A/ja not_active Withdrawn
- 2004-07-15 EP EP04744591A patent/EP1652199A2/en not_active Withdrawn
- 2004-07-15 WO PCT/IB2004/051234 patent/WO2005008695A2/en active Application Filing
- 2004-07-15 CN CN200480021000.4A patent/CN1826670B/zh not_active Expired - Fee Related
- 2004-07-20 TW TW093121660A patent/TW200519979A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
JP2006528837A (ja) | 2006-12-21 |
US8653926B2 (en) | 2014-02-18 |
WO2005008695A2 (en) | 2005-01-27 |
EP1652199A2 (en) | 2006-05-03 |
US20060163692A1 (en) | 2006-07-27 |
TW200519979A (en) | 2005-06-16 |
CN1826670A (zh) | 2006-08-30 |
WO2005008695A3 (en) | 2005-05-12 |
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