TWI409863B - 半導體晶圓之清潔方法 - Google Patents
半導體晶圓之清潔方法 Download PDFInfo
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- TWI409863B TWI409863B TW098141131A TW98141131A TWI409863B TW I409863 B TWI409863 B TW I409863B TW 098141131 A TW098141131 A TW 098141131A TW 98141131 A TW98141131 A TW 98141131A TW I409863 B TWI409863 B TW I409863B
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- Prior art keywords
- cleaning
- wax
- wafer
- microbubbles
- cleaning method
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- 238000004140 cleaning Methods 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 239000007788 liquid Substances 0.000 claims abstract description 29
- 239000004094 surface-active agent Substances 0.000 claims description 10
- 239000000908 ammonium hydroxide Substances 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 125000001453 quaternary ammonium group Chemical group 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 47
- 239000001993 wax Substances 0.000 description 45
- 150000003839 salts Chemical class 0.000 description 13
- 239000000126 substance Substances 0.000 description 10
- -1 (n- or iso-) Chemical compound 0.000 description 9
- 238000005498 polishing Methods 0.000 description 9
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000002736 nonionic surfactant Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000002280 amphoteric surfactant Substances 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 150000003973 alkyl amines Chemical class 0.000 description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 description 4
- 235000014113 dietary fatty acids Nutrition 0.000 description 4
- 239000000194 fatty acid Substances 0.000 description 4
- 229930195729 fatty acid Natural products 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 125000002947 alkylene group Chemical group 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 230000003472 neutralizing effect Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000001180 sulfating effect Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910021642 ultra pure water Inorganic materials 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 239000003570 air Substances 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 150000005215 alkyl ethers Chemical class 0.000 description 2
- 239000003945 anionic surfactant Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003093 cationic surfactant Substances 0.000 description 2
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 2
- 229960001231 choline Drugs 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000005445 natural material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 235000014593 oils and fats Nutrition 0.000 description 2
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 125000002467 phosphate group Chemical class [H]OP(=O)(O[H])O[*] 0.000 description 2
- 229920005862 polyol Polymers 0.000 description 2
- 150000003077 polyols Chemical class 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 150000005846 sugar alcohols Polymers 0.000 description 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- 150000004670 unsaturated fatty acids Chemical class 0.000 description 2
- 235000021122 unsaturated fatty acids Nutrition 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OQZAQBGJENJMHT-UHFFFAOYSA-N 1,3-dibromo-5-methoxybenzene Chemical compound COC1=CC(Br)=CC(Br)=C1 OQZAQBGJENJMHT-UHFFFAOYSA-N 0.000 description 1
- SQRFXEGLEGEFHV-UHFFFAOYSA-N 2-[pentadecyl(sulfo)amino]ethanesulfonic acid Chemical compound CCCCCCCCCCCCCCCN(S(O)(=O)=O)CCS(O)(=O)=O SQRFXEGLEGEFHV-UHFFFAOYSA-N 0.000 description 1
- 101100379067 Caenorhabditis elegans anc-1 gene Proteins 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- JFKCVAZSEWPOIX-UHFFFAOYSA-N Menthyl ethylene glycol carbonate Chemical compound CC(C)C1CCC(C)CC1OC(=O)OCCO JFKCVAZSEWPOIX-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- 229920001800 Shellac Polymers 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 229910001860 alkaline earth metal hydroxide Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 description 1
- 229910001863 barium hydroxide Inorganic materials 0.000 description 1
- 235000013871 bee wax Nutrition 0.000 description 1
- 239000012166 beeswax Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 150000002632 lipids Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- LFETXMWECUPHJA-UHFFFAOYSA-N methanamine;hydrate Chemical compound O.NC LFETXMWECUPHJA-UHFFFAOYSA-N 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- BEVGWNKCJKXLQC-UHFFFAOYSA-N n-methylmethanamine;hydrate Chemical compound [OH-].C[NH2+]C BEVGWNKCJKXLQC-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 150000004671 saturated fatty acids Chemical class 0.000 description 1
- 239000004208 shellac Substances 0.000 description 1
- ZLGIYFNHBLSMPS-ATJNOEHPSA-N shellac Chemical compound OCCCCCC(O)C(O)CCCCCCCC(O)=O.C1C23[C@H](C(O)=O)CCC2[C@](C)(CO)[C@@H]1C(C(O)=O)=C[C@@H]3O ZLGIYFNHBLSMPS-ATJNOEHPSA-N 0.000 description 1
- 235000013874 shellac Nutrition 0.000 description 1
- 229940113147 shellac Drugs 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- JXKPEJDQGNYQSM-UHFFFAOYSA-M sodium propionate Chemical compound [Na+].CCC([O-])=O JXKPEJDQGNYQSM-UHFFFAOYSA-M 0.000 description 1
- 229960003212 sodium propionate Drugs 0.000 description 1
- 235000010334 sodium propionate Nutrition 0.000 description 1
- 239000004324 sodium propionate Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 150000005621 tetraalkylammonium salts Chemical class 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- JVOPCCBEQRRLOJ-UHFFFAOYSA-M tetrapentylazanium;hydroxide Chemical compound [OH-].CCCCC[N+](CCCCC)(CCCCC)CCCCC JVOPCCBEQRRLOJ-UHFFFAOYSA-M 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- BJAARRARQJZURR-UHFFFAOYSA-N trimethylazanium;hydroxide Chemical compound O.CN(C)C BJAARRARQJZURR-UHFFFAOYSA-N 0.000 description 1
- 239000004711 α-olefin Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/003—Cleaning involving contact with foam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/102—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration with means for agitating the liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
本發明係關於一種於一半導體晶圓(例如矽)之加工步驟中所實施之清潔方法。
一種使用於半導體裝置中之半導體晶圓(基材),其係藉由加工一錠塊(ingot block)為一類鏡面之薄板而製造,該錠塊係藉由柴氏法(Czochralski)或浮動區法(floating zone method)成長。在其加工步驟中,主要為實施(1)一將該錠塊切割為晶圓之切片步驟,(2)一將所切割之該晶圓之外周部分傾斜之傾斜步驟,(3)一藉由例如研磨或表面磨光,將傾斜之該晶圓平面化之平面化步驟,(4)一用以移除該平面化之晶圓中所出現之加工變形之蝕刻步驟,(5)一拋光各該經蝕刻之晶圓之雙面或單面之拋光步驟,(6)一熱處理步驟、檢查步驟、以及各種清潔步驟等。
一般而言,在拋光一晶圓之一表面之拋光步驟中,係將蠟施塗於欲拋光之該晶圓之一表面上,固定該晶圓並使其可轉動,並拋光另一表面。在該拋光步驟之後,為移除吸附於該晶圓上之蠟及加工過程中所吸附之顆粒,係實施使用鹼等之清潔(參見專利文獻1)。在此方法中,有時係以剝落代替完全溶解於清潔液之方式,移除吸附於該晶圓表面之蠟而去,而在清潔之後可能仍會有殘留的蠟。
[專利文獻1]日本未審查專利申請公開第8-213356號。
[本發明欲解決之問題]
本發明人已發現到,習知技術之清潔方法中之一問題點,未溶解且呈固體物質之剝落的蠟,會呈顆粒再次吸附於該晶圓上、污染該晶圓並導致清潔槽之過濾器之阻塞。
本發明之一目的在於提供一種能夠解決上述問題且有效地移除晶圓上之蠟之清潔方法。
[解決問題之方法]
為了解決上述問題,本發明人係敏銳地進行測試,結果發現,當藉由使用包含微氣泡之清潔液清潔晶圓,將吸附於晶圓表面之蠟完全地溶解至清潔液中,而非以呈固體物質而剝落,即可均勻地移除該蠟,進而完成本發明。
更特定言之,本發明係關於一種使用清潔液以移除吸附於一半導體晶圓表面之蠟之清潔方法,該清潔方法之特徵在於該清潔液係包含微氣泡。
此外,本發明係關於一種清潔方法,其中該清潔液係包含一鹼性成分及一表面活性劑。
此外,本發明係關於一種清潔方法,其中該鹼性成分為氨或有機氫氧化銨。
此外,本發明係關於一種清潔方法,其中該半導體晶圓為矽晶圓。
[本發明之效果]
在使用根據本發明之包含微氣泡之清潔液之清潔方法中,在將吸附於晶圓表面之蠟完全地溶解至清潔液中,而非呈固體物質而剝落時,即可均勻地移除該蠟,並且可以降低將蠟呈固體物質剝落之除蠟過程中,由蠟所產生之顆粒導致晶圓再次污染之風險。
下文將以一實施態樣詳細說明本發明。
本發明係關於一種使用清潔液以移除吸附於一半導體晶圓表面之蠟之清潔方法,該清潔方法之特徵在於該清潔液係包含微氣泡。
可以藉由本發明之清潔方法所清潔之晶圓之材料、形狀等並無特別限制。該材料係包含多種用於習知半導體製造中之材料。具體言之,該材料係包含:矽、鍺、砷或其複合材料。在本發明中,晶圓之形狀包含在各種加工步驟中所產生之一般眾所皆知之各種形狀。較佳包含在普通之矽晶圓製造步驟階段中之矽晶圓。
在本發明之清潔方法中,作為移除目標之蠟為普通半導體晶圓拋光步驟等中所使用之蠟,對其類型也沒有特別限制,且該蠟通常包含蠟狀物質之蠟成分、樹脂成分、以及添加劑。用於控制主要關於拋光精確度之黏度、伸長率、以及彈性之蠟成分的例子包含主要為天然之物質(例如蜂蠟、油類及脂類、棕櫚蠟、野漆樹蠟、以及石蠟)及主要為合成之物質(例如聚乙二醇及聚丙二醇)。用於控制主要關於保持力之吸附力、抗震性、硬度等之樹脂成分的例子包含主要為天然之物質(例如蟲漆、松香、以及瀝青)及主要為合成之物質(例如乙酸乙烯酯、尼龍、丙烯酸類聚合物、以及多種聚合物)。用於控制清潔性能、抗氧化性、耐熱性、浸濕性等之添加劑的例子包含各種表面活性劑。其施用形式同樣沒有特別限制,其例子包含噴塗蠟、固體蠟、以及塗層劑。
作為清潔液,可使用之清潔液並無特別限制,只要該清潔液係用於移除蠟,具體言之,一有利於油類及脂類、樹脂、顆粒等之移除性能且之包含一鹼性成分及一表面活性劑之含水液體係較佳的。
該鹼性成分之例子係包含:鹼金屬氫氧化物(例如氫氧化鋰、氫氧化鈉、以及氫氧化鉀)、鹼土金屬氫氧化物(例如氫氧化鈣、氫氧化鎂、以及氫氧化鋇)、無機氫氧化銨(例如氨及羥基胺)、有機氫氧化銨(例如單甲基氫氧化銨、二甲基氫氧化銨、三甲基氫氧化銨、四甲基氫氧化銨、四乙基氫氧化銨、(正-或異-)、四丙基氫氧化銨、(正-、異-或叔-)四丁基氫氧化銨、四戊基氫氧化銨、四己基氫氧化銨、以及膽鹼)、以及其混合物。在這些無機及有機氫氧化銨之中,較佳為使用氨、四甲基氫氧化銨或膽鹼,其可以較低成本得到用於清潔半導體之高清潔水準之化學液體。
為改善移除目標之蠟之溶解性可添加表面活性劑,且可根據移除目標之蠟選擇適合之表面活性劑。該表面活性劑之例子包含:非離子型表面活性劑、陰離子型表面活性劑、陽離子型表面活性劑、兩性表面活性劑、以及其混合物。
非離子型表面活性劑係包含環氧烷加成型之非離子表面活性劑及多元醇型之非離子表面活性劑。環氧烷加成型之非離子表面活性劑之具體例子係包含由環氧烷(例如環氧乙烷(在下文簡稱為EO)、環氧丙烷、環氧丁烷,下文亦同)所直接加成之高級醇、烷基酚、高級脂肪酸、以及高級烷基胺等。多元醇型之非離子表面活性劑之例子係包含多元醇脂肪酸酯、多元醇烷基醚、以及脂肪酸烷基醇醯胺等。
陰離子型表面活性劑之例子係包含:羧酸(例如具有8至22個碳原子之飽和或不飽和脂肪酸)或其鹽類、硫酸酯鹽類(例如高級醇之硫酸酯鹽類(例如具有8至18個碳原子之脂族醇之硫酸酯鹽類))、高級烷基醚之硫酸酯鹽類(例如具有8至18個碳原子之脂族醇之EO(1至10莫耳)加合物之硫酸酯鹽類)、硫酸化油(例如藉由硫酸化及中和未經變性之天然不飽和之油類及脂類或不飽和蠟所得到之鹽類)、脂肪酸酯之硫酸鹽(例如藉由硫酸化及中和不飽和脂肪酸之低級醇酯所得到之鹽類)、硫酸化之烯烴(例如藉由硫酸化及中和具有12至18個碳原子之烯烴所得到之鹽類)、磺酸鹽(例如烷基苯之磺酸鹽、烷基萘之磺酸鹽、硫代丁二酸二酯型、α-烯烴(碳原子數為12至18)之磺酸鹽)、以及磷酸酯鹽類(例如高級醇(碳原子數為8至60)之磷酸酯之鹽類)。該鹽類之例子係包含:鹼金屬(鈉、鉀等)之鹽類、鹼土金屬(鈣、鎂等)之鹽類、銨鹽、烷基胺之鹽類、以及鏈烷醇胺之鹽類。
陽離子型表面活性劑之例子係包含季銨鹽類(例如四烷基銨鹽、烷基吡啶鹽)及胺鹽類(例如高級胺(如月桂胺)之無機酸鹽)。
兩性表面活性劑之例子係包含:胺基酸型之兩性表面活性劑(例如高級烷基胺(碳原子數為12至18)之丙酸鈉)、硫酸酯鹽類之兩性表面活性劑(例如高級烷基胺(碳原子數為8至18)之硫酸酯鈉鹽)、以及磺酸鹽型之兩性表面活性劑(例如十五烷基硫代牛磺酸(pentadecyl sulfotaurine))。
表面活性劑之用量,以清潔劑之總重量計,通常為30%或更少,較佳為1至20%。
自防止晶圓污染之觀點而言,溶解上述鹼性成分及表面活性劑之含水液體較佳為超純水。
在本發明之清潔方法中,微氣泡之氣體種類並無特別限制;而其具體例子包含空氣、氫氣、氦氣、氮氣、氧氣、以及氬氣。本發明之微氣泡不僅包含單一氣體成分之微氣泡,也包含二或多種氣體成分所組成之微氣泡。具體言之,其例子係包含二或多種選自空氣、氫氣、氦氣、氮氣、氧氣、以及氬氣之氣體成分。
微氣泡之製備方法同樣沒有特別限制,且該微氣泡可使用一已知微氣泡產生方法或產生裝置,將氣體引入而在清潔液中產生。微氣泡產生方法可應用多種描述於已知文獻中之方法(例如Satoshi Ueyama及Makoto Miyamoto所撰寫之“The World of Microbubbles”,Kogyo Chosakai Publishing,Inc.(2006))。微氣泡產生裝置之例子係包含高速剪切流型微氣泡產生裝置。
本發明之清潔方法中所使用之微氣泡之產生條件及微氣泡所產生之量同樣沒有特別限制。微氣泡所產生之量可根據所使用之清潔裝置之體積及形狀、矽晶圓之數量、安裝方法、清潔液之溫度、清潔時間、以及清潔液之其他添加劑,在一合適範圍內隨意地選擇。
微氣泡所產生之位置同樣沒有特別限制,且微氣泡之噴嘴部分可設置於清潔容器之任意位置上。可根據所使用清潔裝置之體積及形狀、矽晶圓之數量、安裝方法、清潔液之溫度、清潔時間、以及清潔液之其他添加劑而隨意地選擇合適之位置。具體言之,其例子係包含:清潔容器之底部、側表面部分、上部、以及上述之多個部分。
亦可使用一在與清潔容器不同之容器中產生微氣泡,然後使用傳送泵將微氣泡引入清潔容器之方法。同樣可使用一藉由循環管將清潔容器及產生微氣泡水之容器彼此相連,並藉由傳送泵保持循環之方法。同樣可使用一在傳送管之中間安裝微氣泡產生裝置,並將微氣泡水引入清潔容器之方法。
在上述實施態樣中,上述說明係於一晶圓浸沒在裝有清潔液之清潔容器中之假設形式下;然而,亦可使用噴淋式清潔及噴霧式清潔等。此外,亦可同時聯合使用超音波進行清潔。
[實施例]
下文,將以實施例更詳細說明本發明。
1.實驗方法
根據以下(1)製備一其一表面上施有蠟之晶圓,並藉由方法(2)清潔該晶圓。
(1)製備其一表面上施有蠟之晶圓
將Skyliquid(由Nikka Seiko股份有限公司所製造之蠟(羥基化之松香+異丙醇+甲苯))作為蠟,施用於8英寸之P型矽晶圓上。將該矽晶圓以鏡面向上置於旋塗儀中,當以3000rpm旋轉時,以滴管量出3毫升之skyliquid之儲存溶液,並自基材之中心傾倒。20秒之後,停止旋轉,使該晶圓自然乾燥。
(2)清潔方法
將ANC-1(由Tama Chemicals股份有限公司所生產,10%或更少之TMAH(四甲基氫氧化銨)+表面活性劑)以超純水稀釋20倍作為清潔化學液體使用,並在液體溫度為20℃下進行清潔。實施例及比較例之條件係敘述如下。
(實施例)
在裝有清潔化學液體之4公升清潔槽之底部設有一微氣泡產生裝置(由Nanoplanet研究機構公司所生產之M2-MS/PTFE型)之噴嘴部分,持續地產生1公升/分鐘之微氣泡並將其引入。以空氣作為氣泡之氣體。在引入微氣泡5分鐘之後,將一表面上施有蠟之一矽晶圓浸沒於其中。在浸沒過程中,保持產生微氣泡。將該晶圓浸沒預定時間(1、3、5或10分鐘)之後,將該晶圓在超純水沖洗槽中浸沒1分鐘,並沖洗掉化學液體。然後,取出該晶圓並藉由以乾燥空氣吹過其表面加以乾燥。
(比較例)
除了未產生微氣泡以外,進行類似於該實施例之操作。
2.評估方法
視覺評估各晶圓之除蠟狀態及清潔液體之狀態。
3.實驗結果
第1圖(照片)及第2圖(示意圖)所示為觀察到之晶圓之除蠟狀態的結果。
短暫觀察除蠟過程之結果,在比較例中,蠟呈顆粒而從週邊剝落。因此,發現到蠟之移除方式為不均勻且不平坦。因此,可以說局部殘留蠟之可能性為高。蠟係呈固體物質之狀態剝落,可以說顆粒增加及過濾器之阻塞之風險為高。
另一方面,在加入微氣泡時,整個表面係均勻地溶解,且蠟之厚度整個減少。因此,發現到蠟之移除方式為均勻且無不平坦。因此,可以說局部殘留蠟之可能性為低。蠟係全部被溶解且移除,而非呈固體物質剝落;因此,可以說顆粒增加及過濾器之阻塞之風險為低。
本發明之清潔方法能夠在組裝半導體基材之過程中有效地移除吸附於晶圓之蠟;因此,該清潔方法係對該領域有顯著貢獻。
第1圖所示為實施例及比較例之晶圓的照片;以及
第2圖所示為觀察到之實施例及比較例之晶圓狀態之結果示意圖。
Claims (3)
- 一種藉由使用一清潔液而移除吸附於一半導體晶圓表面之蠟之清潔方法,該清潔方法之特徵在於該清潔液係一包含一鹼性成分、一表面活性劑及微氣泡之含水液體。
- 如請求項1所述之清潔方法,其中該鹼性成分為季銨氫氧化物。
- 如請求項1或2中所述之清潔方法,其中該半導體晶圓為矽晶圓。
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- 2009-11-05 CN CN200910211834A patent/CN101745507A/zh active Pending
- 2009-11-25 EP EP09014689A patent/EP2194567B1/en active Active
- 2009-12-01 US US12/592,706 patent/US10121649B2/en active Active
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US20100139711A1 (en) | 2010-06-10 |
KR101146000B1 (ko) | 2012-05-16 |
CN101745507A (zh) | 2010-06-23 |
TW201023254A (en) | 2010-06-16 |
EP2194567A1 (en) | 2010-06-09 |
EP2194567B1 (en) | 2012-08-15 |
US10121649B2 (en) | 2018-11-06 |
KR20100064328A (ko) | 2010-06-14 |
JP2010135525A (ja) | 2010-06-17 |
CN104550100A (zh) | 2015-04-29 |
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