TWI404288B - 具有上升時間偵測器的靜電放電保護電路及放電維持電路及提供靜電放電保護之方法 - Google Patents
具有上升時間偵測器的靜電放電保護電路及放電維持電路及提供靜電放電保護之方法 Download PDFInfo
- Publication number
- TWI404288B TWI404288B TW098143423A TW98143423A TWI404288B TW I404288 B TWI404288 B TW I404288B TW 098143423 A TW098143423 A TW 098143423A TW 98143423 A TW98143423 A TW 98143423A TW I404288 B TWI404288 B TW I404288B
- Authority
- TW
- Taiwan
- Prior art keywords
- circuit
- esd
- shunt
- time constant
- dissipation
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000012423 maintenance Methods 0.000 title 1
- 230000036962 time dependent Effects 0.000 claims abstract description 23
- 230000004913 activation Effects 0.000 claims abstract description 7
- 230000008859 change Effects 0.000 claims description 55
- 230000004044 response Effects 0.000 claims description 17
- 230000006378 damage Effects 0.000 claims description 14
- 239000003990 capacitor Substances 0.000 claims description 9
- 230000015556 catabolic process Effects 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims 2
- 230000000977 initiatory effect Effects 0.000 claims 1
- 230000008569 process Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000009528 severe injury Effects 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/20—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess voltage
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
- H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/338,056 US8116047B2 (en) | 2008-12-18 | 2008-12-18 | Electrostatic discharge protective circuit having rise time detector and discharge sustaining circuitry |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201034331A TW201034331A (en) | 2010-09-16 |
| TWI404288B true TWI404288B (zh) | 2013-08-01 |
Family
ID=41728384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098143423A TWI404288B (zh) | 2008-12-18 | 2009-12-17 | 具有上升時間偵測器的靜電放電保護電路及放電維持電路及提供靜電放電保護之方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8116047B2 (https=) |
| EP (1) | EP2368325A1 (https=) |
| JP (1) | JP5650659B2 (https=) |
| KR (1) | KR101720809B1 (https=) |
| CN (1) | CN102257731B (https=) |
| TW (1) | TWI404288B (https=) |
| WO (1) | WO2010080319A1 (https=) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8363367B2 (en) * | 2009-03-27 | 2013-01-29 | International Business Machines Corporation | Electrical overstress protection circuit |
| US8649134B2 (en) * | 2010-03-11 | 2014-02-11 | Silicon Laboratories Inc. | Electrostatic discharge protection rail clamp with discharge interruption circuitry |
| TWI420770B (zh) * | 2010-10-12 | 2013-12-21 | Innolux Corp | 具有靜電放電保護的驅動器電路 |
| JP5726583B2 (ja) * | 2011-03-16 | 2015-06-03 | リコー電子デバイス株式会社 | Ｅｓｄ保護回路 |
| TW201242202A (en) * | 2011-04-07 | 2012-10-16 | Ralink Technology Corp | Surge protection circuit |
| JP2013033873A (ja) * | 2011-08-03 | 2013-02-14 | Denso Corp | 半導体装置 |
| WO2013076527A1 (en) * | 2011-11-22 | 2013-05-30 | Freescale Semiconductor, Inc. | Integrated circuit, integrated circuit package and method of providing protection against an electrostatic discharge event |
| TWI434398B (zh) * | 2011-12-21 | 2014-04-11 | Holtek Semiconductor Inc | 用於超高壓晶片的靜電放電保護電路 |
| JP5696074B2 (ja) * | 2012-03-16 | 2015-04-08 | 株式会社東芝 | 半導体装置 |
| WO2013160713A1 (en) * | 2012-04-26 | 2013-10-31 | Freescale Semiconductor, Inc. | Electronic device and method for maintaining functionality of an integrated circuit during electrical aggressions |
| US8767370B2 (en) | 2012-07-25 | 2014-07-01 | International Business Machines Corporation | Providing noise protection in a signal transmission system |
| US9083176B2 (en) | 2013-01-11 | 2015-07-14 | Qualcomm Incorporated | Electrostatic discharge clamp with disable |
| FR3001085A1 (fr) * | 2013-01-15 | 2014-07-18 | St Microelectronics Sa | Dispositif semiconducteur bidirectionnel de protection contre les decharges electrostatiques, utilisable sans circuit de declenchement |
| US8922963B2 (en) * | 2013-01-30 | 2014-12-30 | Monolithic Power Systems, Inc. | Electrostatic discharge protection circuit and method thereof |
| US9153958B2 (en) | 2013-08-15 | 2015-10-06 | Nxp B.V. | Bias-insensitive trigger circuit for bigFET ESD supply protection |
| CN104283542B (zh) * | 2014-07-31 | 2017-09-26 | 华帝股份有限公司 | 一种基于压电效应的金属面板输入控制系统及其控制方法 |
| JP6398649B2 (ja) * | 2014-11-25 | 2018-10-03 | セイコーエプソン株式会社 | 静電気保護回路及び半導体集積回路装置 |
| US10557881B2 (en) | 2015-03-27 | 2020-02-11 | Analog Devices Global | Electrical overstress reporting |
| US9871373B2 (en) | 2015-03-27 | 2018-01-16 | Analog Devices Global | Electrical overstress recording and/or harvesting |
| US20160306404A1 (en) * | 2015-04-14 | 2016-10-20 | Apple Inc. | Limiting in-rush current for plug-in capacitive loads |
| GB2537916B (en) * | 2015-04-30 | 2017-08-30 | Advanced Risc Mach Ltd | Power supply clamp |
| JP6627333B2 (ja) | 2015-09-01 | 2020-01-08 | セイコーエプソン株式会社 | 静電気保護回路、半導体集積回路装置、及び、電子機器 |
| CN105470938B (zh) * | 2016-01-25 | 2018-04-06 | 珠海全志科技股份有限公司 | 一种延长静电泄放时间的电源钳位电路 |
| CN107278006A (zh) * | 2016-04-08 | 2017-10-20 | 殷斌 | 一种自动感应和主动消除静电的方法、除静电装置、除静电产品 |
| US10338132B2 (en) | 2016-04-19 | 2019-07-02 | Analog Devices Global | Wear-out monitor device |
| US10365322B2 (en) | 2016-04-19 | 2019-07-30 | Analog Devices Global | Wear-out monitor device |
| CN108075460B (zh) * | 2016-11-15 | 2021-10-29 | 恩智浦有限公司 | 具有反馈控制的浪涌保护电路 |
| JP6753301B2 (ja) * | 2016-12-19 | 2020-09-09 | 三菱電機株式会社 | 駆動回路 |
| US11024525B2 (en) | 2017-06-12 | 2021-06-01 | Analog Devices International Unlimited Company | Diffusion temperature shock monitor |
| US10879232B2 (en) * | 2017-10-13 | 2020-12-29 | Taiwan Semiconductor Manufacturing Company Ltd. | Circuit, system and method for electrostatic discharge (ESD) protection |
| CN107732888A (zh) * | 2017-10-19 | 2018-02-23 | 丹阳恒芯电子有限公司 | 一种物联网中的高性能静电保护电路 |
| CN107706896A (zh) * | 2017-10-19 | 2018-02-16 | 丹阳恒芯电子有限公司 | 一种物联网中的锁存静电保护电路 |
| CN110058094B (zh) * | 2018-01-18 | 2021-09-07 | 中芯国际集成电路制造(上海)有限公司 | 一种esd检测电路以及电子系统 |
| US10224817B1 (en) * | 2018-07-19 | 2019-03-05 | Navitas Semiconductor, Inc. | Power transistor control signal gating |
| CN109524949A (zh) * | 2018-12-20 | 2019-03-26 | 西安电子科技大学 | 一种静电防护esd保护装置 |
| WO2022190475A1 (ja) * | 2021-03-12 | 2022-09-15 | ソニーセミコンダクタソリューションズ株式会社 | 静電気放電保護回路、および、電子装置 |
| US12294211B2 (en) * | 2021-03-25 | 2025-05-06 | Texas Instruments Incorporated | Integrated circuit with electrostatic discharge protected power supply |
| US11803201B1 (en) * | 2022-05-11 | 2023-10-31 | Stmicroelectronics S.R.L. | Dynamic current scaling of a regulator |
| CN118074085A (zh) * | 2024-04-22 | 2024-05-24 | 江苏应能微电子股份有限公司 | 用于esd防护的双模灵敏检测瞬态触发电路 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5946177A (en) * | 1998-08-17 | 1999-08-31 | Motorola, Inc. | Circuit for electrostatic discharge protection |
| TW200418165A (en) * | 2002-12-10 | 2004-09-16 | Motorola Inc | Transient detection circuit |
| US20060176626A1 (en) * | 2005-02-04 | 2006-08-10 | Griesbach William R | Electro-static discharge (ESD) power clamp with power up detection |
| US20080007882A1 (en) * | 2006-07-05 | 2008-01-10 | Atmel Corporation | Noise immune rc trigger for esd protection |
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| US4010A (en) * | 1845-04-22 | Island | ||
| US8000A (en) * | 1851-03-25 | Improvement in scythe-fastenings | ||
| US8010A (en) * | 1851-04-01 | Peter mckinlay | ||
| US3941790A (en) * | 1967-07-03 | 1976-03-02 | National Research Development Corporation | Bis diketopiperazines |
| US3928330A (en) * | 1973-12-19 | 1975-12-23 | Ciba Geigy Corp | Substituted piperazinedione carboxylic acids and metal salts thereof |
| GB1459488A (en) * | 1974-03-19 | 1976-12-22 | Wyeth John & Brother Ltd | Piperazinedione derivatives |
| US4088649A (en) * | 1975-07-02 | 1978-05-09 | Firmenich S.A. | Process for preparing a diketo-piperazine |
| US4205057A (en) * | 1978-01-17 | 1980-05-27 | Government Of The United States | Cerebrospinal fluid protein fragments |
| DE2940654A1 (de) * | 1979-10-06 | 1981-04-16 | Bayer Ag, 5090 Leverkusen | Dimeres keten der 1,2,,-triazol-3-carbonsaeure |
| US4331595A (en) * | 1980-06-23 | 1982-05-25 | Ortho Pharmaceutical Corporation | Immunoregulatory diketopiperazine compounds |
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| US4694061A (en) * | 1983-10-12 | 1987-09-15 | Ciba-Geigy Corporation | Radiation-sensitive polycondensates, processes for their preparation coated material and its use |
| US4806538A (en) * | 1984-11-02 | 1989-02-21 | Fujisawa Pharmaceutical Co., Ltd. | Piperazine compound as PAF-antagonist |
| US4661500A (en) * | 1985-08-29 | 1987-04-28 | Roman Rozencwaig | Method of medical treatment with serotonin antagonists |
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| US4694081A (en) * | 1985-09-23 | 1987-09-15 | Monsanto Company | Process to prepare 2,5-diketopiperazines |
| US5255146A (en) * | 1991-08-29 | 1993-10-19 | National Semiconductor Corporation | Electrostatic discharge detection and clamp control circuit |
| US5686751A (en) * | 1996-06-28 | 1997-11-11 | Winbond Electronics Corp. | Electrostatic discharge protection circuit triggered by capacitive-coupling |
| US6249410B1 (en) * | 1999-08-23 | 2001-06-19 | Taiwan Semiconductor Manufacturing Company | ESD protection circuit without overstress gate-driven effect |
| US7102862B1 (en) * | 2002-10-29 | 2006-09-05 | Integrated Device Technology, Inc. | Electrostatic discharge protection circuit |
| JP4504850B2 (ja) * | 2005-03-17 | 2010-07-14 | パナソニック株式会社 | 半導体集積回路装置 |
| CN101258597A (zh) * | 2005-07-08 | 2008-09-03 | Nxp股份有限公司 | 具有静电放电保护的集成电路 |
| US7453676B2 (en) * | 2005-11-16 | 2008-11-18 | Huh Yoon J | RC-triggered ESD power clamp circuit and method for providing ESD protection |
| US7660086B2 (en) * | 2006-06-08 | 2010-02-09 | Cypress Semiconductor Corporation | Programmable electrostatic discharge (ESD) protection device |
-
2008
- 2008-12-18 US US12/338,056 patent/US8116047B2/en not_active Expired - Fee Related
-
2009
- 2009-12-09 KR KR1020117016375A patent/KR101720809B1/ko active Active
- 2009-12-09 WO PCT/US2009/067390 patent/WO2010080319A1/en not_active Ceased
- 2009-12-09 JP JP2011542253A patent/JP5650659B2/ja active Active
- 2009-12-09 CN CN200980151299.8A patent/CN102257731B/zh active Active
- 2009-12-09 EP EP09796519A patent/EP2368325A1/en not_active Withdrawn
- 2009-12-17 TW TW098143423A patent/TWI404288B/zh active
-
2012
- 2012-01-10 US US13/347,395 patent/US8520351B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5946177A (en) * | 1998-08-17 | 1999-08-31 | Motorola, Inc. | Circuit for electrostatic discharge protection |
| TW200418165A (en) * | 2002-12-10 | 2004-09-16 | Motorola Inc | Transient detection circuit |
| US20060176626A1 (en) * | 2005-02-04 | 2006-08-10 | Griesbach William R | Electro-static discharge (ESD) power clamp with power up detection |
| US20080007882A1 (en) * | 2006-07-05 | 2008-01-10 | Atmel Corporation | Noise immune rc trigger for esd protection |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102257731A (zh) | 2011-11-23 |
| KR20110114574A (ko) | 2011-10-19 |
| KR101720809B1 (ko) | 2017-03-28 |
| JP2012513121A (ja) | 2012-06-07 |
| US8116047B2 (en) | 2012-02-14 |
| US8520351B2 (en) | 2013-08-27 |
| JP5650659B2 (ja) | 2015-01-07 |
| WO2010080319A1 (en) | 2010-07-15 |
| CN102257731B (zh) | 2015-01-21 |
| US20120127618A1 (en) | 2012-05-24 |
| US20100157491A1 (en) | 2010-06-24 |
| TW201034331A (en) | 2010-09-16 |
| EP2368325A1 (en) | 2011-09-28 |
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