CN102257731B - 具有上升时间检测器及放电持续电路的静电放电保护电路 - Google Patents

具有上升时间检测器及放电持续电路的静电放电保护电路 Download PDF

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Publication number
CN102257731B
CN102257731B CN200980151299.8A CN200980151299A CN102257731B CN 102257731 B CN102257731 B CN 102257731B CN 200980151299 A CN200980151299 A CN 200980151299A CN 102257731 B CN102257731 B CN 102257731B
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CN
China
Prior art keywords
circuit
esd
shunt
dissipation
input signal
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CN200980151299.8A
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English (en)
Chinese (zh)
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CN102257731A (zh
Inventor
理查德·J·K·洪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shengdi Technology Co ltd
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Sanindisco Technology Co ltd
SanDisk Corp
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Publication of CN102257731A publication Critical patent/CN102257731A/zh
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/20—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess voltage
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN200980151299.8A 2008-12-18 2009-12-09 具有上升时间检测器及放电持续电路的静电放电保护电路 Active CN102257731B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/338,056 US8116047B2 (en) 2008-12-18 2008-12-18 Electrostatic discharge protective circuit having rise time detector and discharge sustaining circuitry
US12/338,056 2008-12-18
PCT/US2009/067390 WO2010080319A1 (en) 2008-12-18 2009-12-09 Electrostatic discharge protective circuit having rise time detector and discharge sustaining circuitry

Publications (2)

Publication Number Publication Date
CN102257731A CN102257731A (zh) 2011-11-23
CN102257731B true CN102257731B (zh) 2015-01-21

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CN200980151299.8A Active CN102257731B (zh) 2008-12-18 2009-12-09 具有上升时间检测器及放电持续电路的静电放电保护电路

Country Status (7)

Country Link
US (2) US8116047B2 (https=)
EP (1) EP2368325A1 (https=)
JP (1) JP5650659B2 (https=)
KR (1) KR101720809B1 (https=)
CN (1) CN102257731B (https=)
TW (1) TWI404288B (https=)
WO (1) WO2010080319A1 (https=)

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TW201242202A (en) * 2011-04-07 2012-10-16 Ralink Technology Corp Surge protection circuit
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WO2013076527A1 (en) * 2011-11-22 2013-05-30 Freescale Semiconductor, Inc. Integrated circuit, integrated circuit package and method of providing protection against an electrostatic discharge event
TWI434398B (zh) * 2011-12-21 2014-04-11 Holtek Semiconductor Inc 用於超高壓晶片的靜電放電保護電路
JP5696074B2 (ja) * 2012-03-16 2015-04-08 株式会社東芝 半導体装置
WO2013160713A1 (en) * 2012-04-26 2013-10-31 Freescale Semiconductor, Inc. Electronic device and method for maintaining functionality of an integrated circuit during electrical aggressions
US8767370B2 (en) 2012-07-25 2014-07-01 International Business Machines Corporation Providing noise protection in a signal transmission system
US9083176B2 (en) 2013-01-11 2015-07-14 Qualcomm Incorporated Electrostatic discharge clamp with disable
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US8922963B2 (en) * 2013-01-30 2014-12-30 Monolithic Power Systems, Inc. Electrostatic discharge protection circuit and method thereof
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CN104283542B (zh) * 2014-07-31 2017-09-26 华帝股份有限公司 一种基于压电效应的金属面板输入控制系统及其控制方法
JP6398649B2 (ja) * 2014-11-25 2018-10-03 セイコーエプソン株式会社 静電気保護回路及び半導体集積回路装置
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US9871373B2 (en) 2015-03-27 2018-01-16 Analog Devices Global Electrical overstress recording and/or harvesting
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JP6627333B2 (ja) 2015-09-01 2020-01-08 セイコーエプソン株式会社 静電気保護回路、半導体集積回路装置、及び、電子機器
CN105470938B (zh) * 2016-01-25 2018-04-06 珠海全志科技股份有限公司 一种延长静电泄放时间的电源钳位电路
CN107278006A (zh) * 2016-04-08 2017-10-20 殷斌 一种自动感应和主动消除静电的方法、除静电装置、除静电产品
US10338132B2 (en) 2016-04-19 2019-07-02 Analog Devices Global Wear-out monitor device
US10365322B2 (en) 2016-04-19 2019-07-30 Analog Devices Global Wear-out monitor device
CN108075460B (zh) * 2016-11-15 2021-10-29 恩智浦有限公司 具有反馈控制的浪涌保护电路
JP6753301B2 (ja) * 2016-12-19 2020-09-09 三菱電機株式会社 駆動回路
US11024525B2 (en) 2017-06-12 2021-06-01 Analog Devices International Unlimited Company Diffusion temperature shock monitor
US10879232B2 (en) * 2017-10-13 2020-12-29 Taiwan Semiconductor Manufacturing Company Ltd. Circuit, system and method for electrostatic discharge (ESD) protection
CN107732888A (zh) * 2017-10-19 2018-02-23 丹阳恒芯电子有限公司 一种物联网中的高性能静电保护电路
CN107706896A (zh) * 2017-10-19 2018-02-16 丹阳恒芯电子有限公司 一种物联网中的锁存静电保护电路
CN110058094B (zh) * 2018-01-18 2021-09-07 中芯国际集成电路制造(上海)有限公司 一种esd检测电路以及电子系统
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Also Published As

Publication number Publication date
CN102257731A (zh) 2011-11-23
KR20110114574A (ko) 2011-10-19
TWI404288B (zh) 2013-08-01
KR101720809B1 (ko) 2017-03-28
JP2012513121A (ja) 2012-06-07
US8116047B2 (en) 2012-02-14
US8520351B2 (en) 2013-08-27
JP5650659B2 (ja) 2015-01-07
WO2010080319A1 (en) 2010-07-15
US20120127618A1 (en) 2012-05-24
US20100157491A1 (en) 2010-06-24
TW201034331A (en) 2010-09-16
EP2368325A1 (en) 2011-09-28

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