KR101720809B1 - 상승 시간 검출기와 방전 지속 회로를 구비하는 정전기 방전 보호 회로 - Google Patents

상승 시간 검출기와 방전 지속 회로를 구비하는 정전기 방전 보호 회로 Download PDF

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KR101720809B1
KR101720809B1 KR1020117016375A KR20117016375A KR101720809B1 KR 101720809 B1 KR101720809 B1 KR 101720809B1 KR 1020117016375 A KR1020117016375 A KR 1020117016375A KR 20117016375 A KR20117016375 A KR 20117016375A KR 101720809 B1 KR101720809 B1 KR 101720809B1
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circuit
esd
dissipation
signal
time constant
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KR20110114574A (ko
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리차드 제이. 케이. 홍
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샌디스크 테크놀로지스 엘엘씨
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/20—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess voltage
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020117016375A 2008-12-18 2009-12-09 상승 시간 검출기와 방전 지속 회로를 구비하는 정전기 방전 보호 회로 Active KR101720809B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/338,056 US8116047B2 (en) 2008-12-18 2008-12-18 Electrostatic discharge protective circuit having rise time detector and discharge sustaining circuitry
US12/338,056 2008-12-18
PCT/US2009/067390 WO2010080319A1 (en) 2008-12-18 2009-12-09 Electrostatic discharge protective circuit having rise time detector and discharge sustaining circuitry

Publications (2)

Publication Number Publication Date
KR20110114574A KR20110114574A (ko) 2011-10-19
KR101720809B1 true KR101720809B1 (ko) 2017-03-28

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KR1020117016375A Active KR101720809B1 (ko) 2008-12-18 2009-12-09 상승 시간 검출기와 방전 지속 회로를 구비하는 정전기 방전 보호 회로

Country Status (7)

Country Link
US (2) US8116047B2 (https=)
EP (1) EP2368325A1 (https=)
JP (1) JP5650659B2 (https=)
KR (1) KR101720809B1 (https=)
CN (1) CN102257731B (https=)
TW (1) TWI404288B (https=)
WO (1) WO2010080319A1 (https=)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8363367B2 (en) * 2009-03-27 2013-01-29 International Business Machines Corporation Electrical overstress protection circuit
US8649134B2 (en) * 2010-03-11 2014-02-11 Silicon Laboratories Inc. Electrostatic discharge protection rail clamp with discharge interruption circuitry
TWI420770B (zh) * 2010-10-12 2013-12-21 Innolux Corp 具有靜電放電保護的驅動器電路
JP5726583B2 (ja) * 2011-03-16 2015-06-03 リコー電子デバイス株式会社 Ｅｓｄ保護回路
TW201242202A (en) * 2011-04-07 2012-10-16 Ralink Technology Corp Surge protection circuit
JP2013033873A (ja) * 2011-08-03 2013-02-14 Denso Corp 半導体装置
WO2013076527A1 (en) * 2011-11-22 2013-05-30 Freescale Semiconductor, Inc. Integrated circuit, integrated circuit package and method of providing protection against an electrostatic discharge event
TWI434398B (zh) * 2011-12-21 2014-04-11 Holtek Semiconductor Inc 用於超高壓晶片的靜電放電保護電路
JP5696074B2 (ja) * 2012-03-16 2015-04-08 株式会社東芝 半導体装置
WO2013160713A1 (en) * 2012-04-26 2013-10-31 Freescale Semiconductor, Inc. Electronic device and method for maintaining functionality of an integrated circuit during electrical aggressions
US8767370B2 (en) 2012-07-25 2014-07-01 International Business Machines Corporation Providing noise protection in a signal transmission system
US9083176B2 (en) 2013-01-11 2015-07-14 Qualcomm Incorporated Electrostatic discharge clamp with disable
FR3001085A1 (fr) * 2013-01-15 2014-07-18 St Microelectronics Sa Dispositif semiconducteur bidirectionnel de protection contre les decharges electrostatiques, utilisable sans circuit de declenchement
US8922963B2 (en) * 2013-01-30 2014-12-30 Monolithic Power Systems, Inc. Electrostatic discharge protection circuit and method thereof
US9153958B2 (en) 2013-08-15 2015-10-06 Nxp B.V. Bias-insensitive trigger circuit for bigFET ESD supply protection
CN104283542B (zh) * 2014-07-31 2017-09-26 华帝股份有限公司 一种基于压电效应的金属面板输入控制系统及其控制方法
JP6398649B2 (ja) * 2014-11-25 2018-10-03 セイコーエプソン株式会社 静電気保護回路及び半導体集積回路装置
US10557881B2 (en) 2015-03-27 2020-02-11 Analog Devices Global Electrical overstress reporting
US9871373B2 (en) 2015-03-27 2018-01-16 Analog Devices Global Electrical overstress recording and/or harvesting
US20160306404A1 (en) * 2015-04-14 2016-10-20 Apple Inc. Limiting in-rush current for plug-in capacitive loads
GB2537916B (en) * 2015-04-30 2017-08-30 Advanced Risc Mach Ltd Power supply clamp
JP6627333B2 (ja) 2015-09-01 2020-01-08 セイコーエプソン株式会社 静電気保護回路、半導体集積回路装置、及び、電子機器
CN105470938B (zh) * 2016-01-25 2018-04-06 珠海全志科技股份有限公司 一种延长静电泄放时间的电源钳位电路
CN107278006A (zh) * 2016-04-08 2017-10-20 殷斌 一种自动感应和主动消除静电的方法、除静电装置、除静电产品
US10338132B2 (en) 2016-04-19 2019-07-02 Analog Devices Global Wear-out monitor device
US10365322B2 (en) 2016-04-19 2019-07-30 Analog Devices Global Wear-out monitor device
CN108075460B (zh) * 2016-11-15 2021-10-29 恩智浦有限公司 具有反馈控制的浪涌保护电路
JP6753301B2 (ja) * 2016-12-19 2020-09-09 三菱電機株式会社 駆動回路
US11024525B2 (en) 2017-06-12 2021-06-01 Analog Devices International Unlimited Company Diffusion temperature shock monitor
US10879232B2 (en) * 2017-10-13 2020-12-29 Taiwan Semiconductor Manufacturing Company Ltd. Circuit, system and method for electrostatic discharge (ESD) protection
CN107732888A (zh) * 2017-10-19 2018-02-23 丹阳恒芯电子有限公司 一种物联网中的高性能静电保护电路
CN107706896A (zh) * 2017-10-19 2018-02-16 丹阳恒芯电子有限公司 一种物联网中的锁存静电保护电路
CN110058094B (zh) * 2018-01-18 2021-09-07 中芯国际集成电路制造(上海)有限公司 一种esd检测电路以及电子系统
US10224817B1 (en) * 2018-07-19 2019-03-05 Navitas Semiconductor, Inc. Power transistor control signal gating
CN109524949A (zh) * 2018-12-20 2019-03-26 西安电子科技大学 一种静电防护esd保护装置
WO2022190475A1 (ja) * 2021-03-12 2022-09-15 ソニーセミコンダクタソリューションズ株式会社 静電気放電保護回路、および、電子装置
US12294211B2 (en) * 2021-03-25 2025-05-06 Texas Instruments Incorporated Integrated circuit with electrostatic discharge protected power supply
US11803201B1 (en) * 2022-05-11 2023-10-31 Stmicroelectronics S.R.L. Dynamic current scaling of a regulator
CN118074085A (zh) * 2024-04-22 2024-05-24 江苏应能微电子股份有限公司 用于esd防护的双模灵敏检测瞬态触发电路

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7102862B1 (en) 2002-10-29 2006-09-05 Integrated Device Technology, Inc. Electrostatic discharge protection circuit
US20080007882A1 (en) 2006-07-05 2008-01-10 Atmel Corporation Noise immune rc trigger for esd protection

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4010A (en) * 1845-04-22 Island
US8000A (en) * 1851-03-25 Improvement in scythe-fastenings
US8010A (en) * 1851-04-01 Peter mckinlay
US3941790A (en) * 1967-07-03 1976-03-02 National Research Development Corporation Bis diketopiperazines
US3928330A (en) * 1973-12-19 1975-12-23 Ciba Geigy Corp Substituted piperazinedione carboxylic acids and metal salts thereof
GB1459488A (en) * 1974-03-19 1976-12-22 Wyeth John & Brother Ltd Piperazinedione derivatives
US4088649A (en) * 1975-07-02 1978-05-09 Firmenich S.A. Process for preparing a diketo-piperazine
US4205057A (en) * 1978-01-17 1980-05-27 Government Of The United States Cerebrospinal fluid protein fragments
DE2940654A1 (de) * 1979-10-06 1981-04-16 Bayer Ag, 5090 Leverkusen Dimeres keten der 1,2,,-triazol-3-carbonsaeure
US4331595A (en) * 1980-06-23 1982-05-25 Ortho Pharmaceutical Corporation Immunoregulatory diketopiperazine compounds
US4289759A (en) * 1980-06-23 1981-09-15 Ortho Pharmaceutical Corporation Immunoregulatory diketopiperazine compounds
US4694061A (en) * 1983-10-12 1987-09-15 Ciba-Geigy Corporation Radiation-sensitive polycondensates, processes for their preparation coated material and its use
US4806538A (en) * 1984-11-02 1989-02-21 Fujisawa Pharmaceutical Co., Ltd. Piperazine compound as PAF-antagonist
US4661500A (en) * 1985-08-29 1987-04-28 Roman Rozencwaig Method of medical treatment with serotonin antagonists
US4771056A (en) * 1985-08-29 1988-09-13 Roman Rozencwaig Method of medical treatment with serotonin antagonists
US4694081A (en) * 1985-09-23 1987-09-15 Monsanto Company Process to prepare 2,5-diketopiperazines
US5255146A (en) * 1991-08-29 1993-10-19 National Semiconductor Corporation Electrostatic discharge detection and clamp control circuit
US5686751A (en) * 1996-06-28 1997-11-11 Winbond Electronics Corp. Electrostatic discharge protection circuit triggered by capacitive-coupling
US5946177A (en) * 1998-08-17 1999-08-31 Motorola, Inc. Circuit for electrostatic discharge protection
US6249410B1 (en) * 1999-08-23 2001-06-19 Taiwan Semiconductor Manufacturing Company ESD protection circuit without overstress gate-driven effect
US7209332B2 (en) * 2002-12-10 2007-04-24 Freescale Semiconductor, Inc. Transient detection circuit
US7245468B2 (en) * 2005-02-04 2007-07-17 Agere Systems Inc. Electro-static discharge (ESD) power clamp with power up detection
JP4504850B2 (ja) * 2005-03-17 2010-07-14 パナソニック株式会社 半導体集積回路装置
CN101258597A (zh) * 2005-07-08 2008-09-03 Nxp股份有限公司 具有静电放电保护的集成电路
US7453676B2 (en) * 2005-11-16 2008-11-18 Huh Yoon J RC-triggered ESD power clamp circuit and method for providing ESD protection
US7660086B2 (en) * 2006-06-08 2010-02-09 Cypress Semiconductor Corporation Programmable electrostatic discharge (ESD) protection device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7102862B1 (en) 2002-10-29 2006-09-05 Integrated Device Technology, Inc. Electrostatic discharge protection circuit
US20080007882A1 (en) 2006-07-05 2008-01-10 Atmel Corporation Noise immune rc trigger for esd protection

Also Published As

Publication number Publication date
CN102257731A (zh) 2011-11-23
KR20110114574A (ko) 2011-10-19
TWI404288B (zh) 2013-08-01
JP2012513121A (ja) 2012-06-07
US8116047B2 (en) 2012-02-14
US8520351B2 (en) 2013-08-27
JP5650659B2 (ja) 2015-01-07
WO2010080319A1 (en) 2010-07-15
CN102257731B (zh) 2015-01-21
US20120127618A1 (en) 2012-05-24
US20100157491A1 (en) 2010-06-24
TW201034331A (en) 2010-09-16
EP2368325A1 (en) 2011-09-28

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