TWI404202B - 固態成像器件，固態成像器件之製造方法，及電子裝置 - Google Patents
固態成像器件，固態成像器件之製造方法，及電子裝置 Download PDFInfo
- Publication number
- TWI404202B TWI404202B TW098128300A TW98128300A TWI404202B TW I404202 B TWI404202 B TW I404202B TW 098128300 A TW098128300 A TW 098128300A TW 98128300 A TW98128300 A TW 98128300A TW I404202 B TWI404202 B TW I404202B
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- TW
- Taiwan
- Prior art keywords
- horizontal
- horizontal transfer
- transfer
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- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 96
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 238000003860 storage Methods 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 30
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 27
- 229920005591 polysilicon Polymers 0.000 claims description 27
- 239000007772 electrode material Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- 239000000872 buffer Substances 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 5
- 230000005571 horizontal transmission Effects 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 230000005570 vertical transmission Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 50
- 229910052732 germanium Inorganic materials 0.000 description 25
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 239000012535 impurity Substances 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000010276 construction Methods 0.000 description 3
- 238000005421 electrostatic potential Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical group Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008239902A JP2010073901A (ja) | 2008-09-18 | 2008-09-18 | 固体撮像装置、固体撮像装置の製造方法、及び電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201017874A TW201017874A (en) | 2010-05-01 |
| TWI404202B true TWI404202B (zh) | 2013-08-01 |
Family
ID=41506522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098128300A TWI404202B (zh) | 2008-09-18 | 2009-08-21 | 固態成像器件，固態成像器件之製造方法，及電子裝置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8319877B2 (enExample) |
| EP (1) | EP2166572B1 (enExample) |
| JP (1) | JP2010073901A (enExample) |
| KR (1) | KR20100032836A (enExample) |
| CN (1) | CN101677370B (enExample) |
| TW (1) | TWI404202B (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2011086622A1 (ja) * | 2010-01-12 | 2013-05-16 | パナソニック株式会社 | 固体撮像装置、その駆動方法及びカメラ |
| JP5466975B2 (ja) * | 2010-03-15 | 2014-04-09 | パナソニック株式会社 | 固体撮像装置、固体撮像装置の駆動方法及びカメラ |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070164334A1 (en) * | 2004-07-29 | 2007-07-19 | Hideo Kanbe | Solid-state imaging device, production method and drive method thereof, and camera |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6016461A (ja) * | 1984-06-01 | 1985-01-28 | Hitachi Ltd | 電荷移送素子 |
| JPS63287056A (ja) * | 1987-05-20 | 1988-11-24 | Toshiba Corp | 固体撮像装置 |
| JPH0499381A (ja) * | 1990-08-17 | 1992-03-31 | Hitachi Ltd | 固体撮像素子及びその製造方法 |
| JPH04360477A (ja) * | 1991-06-07 | 1992-12-14 | Sony Corp | Ｃｃｄ固体撮像素子 |
| JPH09246519A (ja) * | 1996-03-14 | 1997-09-19 | Sony Corp | 固体撮像装置およびその駆動方法 |
| JPH10150602A (ja) * | 1996-11-18 | 1998-06-02 | Sharp Corp | 固体撮像素子の駆動方法および固体撮像素子 |
| JP3248470B2 (ja) * | 1997-11-21 | 2002-01-21 | 日本電気株式会社 | 電荷転送装置および電荷転送装置の製造方法 |
| JP2000022134A (ja) * | 1998-07-01 | 2000-01-21 | Matsushita Electron Corp | 固体撮像装置およびその駆動方法 |
| JP2004112304A (ja) * | 2002-09-18 | 2004-04-08 | Canon Inc | 固体撮像装置、その駆動方法、及び撮像システム |
| JP4165346B2 (ja) * | 2003-03-24 | 2008-10-15 | ソニー株式会社 | 固体撮像素子および固体撮像素子の駆動方法 |
| US20050062868A1 (en) * | 2003-03-24 | 2005-03-24 | Tomohiro Shiiba | Solid-state imaging device and method of driving solid-state imaging device |
| JP3885769B2 (ja) * | 2003-06-02 | 2007-02-28 | ソニー株式会社 | 固体撮像装置および固体撮像装置の駆動方法 |
| JP2006049451A (ja) * | 2004-08-03 | 2006-02-16 | Sony Corp | 固体撮像素子及び固体撮像素子の駆動方法 |
| JP2006120743A (ja) * | 2004-10-20 | 2006-05-11 | Sanyo Electric Co Ltd | 固体撮像装置 |
| JP2006319184A (ja) | 2005-05-13 | 2006-11-24 | Sony Corp | 固体撮像装置およびカメラ |
| JP4530961B2 (ja) * | 2005-06-30 | 2010-08-25 | オリンパスイメージング株式会社 | 電子的ぶれ補正装置 |
| JP2008104017A (ja) * | 2006-10-19 | 2008-05-01 | Sharp Corp | 固体撮像装置およびその駆動方法、電子情報機器 |
| JP2008239902A (ja) | 2007-03-28 | 2008-10-09 | Fujifilm Corp | ポリマー微粒子及びその製造方法 |
-
2008
- 2008-09-18 JP JP2008239902A patent/JP2010073901A/ja active Pending
-
2009
- 2009-08-21 TW TW098128300A patent/TWI404202B/zh not_active IP Right Cessation
- 2009-08-27 EP EP09011020.6A patent/EP2166572B1/en not_active Not-in-force
- 2009-09-09 US US12/556,315 patent/US8319877B2/en not_active Expired - Fee Related
- 2009-09-17 KR KR1020090088074A patent/KR20100032836A/ko not_active Withdrawn
- 2009-09-17 CN CN2009101767077A patent/CN101677370B/zh not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070164334A1 (en) * | 2004-07-29 | 2007-07-19 | Hideo Kanbe | Solid-state imaging device, production method and drive method thereof, and camera |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101677370A (zh) | 2010-03-24 |
| CN101677370B (zh) | 2012-03-14 |
| EP2166572A2 (en) | 2010-03-24 |
| KR20100032836A (ko) | 2010-03-26 |
| US8319877B2 (en) | 2012-11-27 |
| EP2166572B1 (en) | 2014-07-23 |
| TW201017874A (en) | 2010-05-01 |
| EP2166572A3 (en) | 2013-08-07 |
| US20100066886A1 (en) | 2010-03-18 |
| JP2010073901A (ja) | 2010-04-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |