TWI400217B - A surface-treated ceramic member, a method of manufacturing the same, and a vacuum processing apparatus - Google Patents
A surface-treated ceramic member, a method of manufacturing the same, and a vacuum processing apparatus Download PDFInfo
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- TWI400217B TWI400217B TW98127987A TW98127987A TWI400217B TW I400217 B TWI400217 B TW I400217B TW 98127987 A TW98127987 A TW 98127987A TW 98127987 A TW98127987 A TW 98127987A TW I400217 B TWI400217 B TW I400217B
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- Prior art keywords
- film
- ceramic
- ceramic member
- sintered body
- particles
- Prior art date
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- 239000000919 ceramic Substances 0.000 title claims description 111
- 238000012545 processing Methods 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000000463 material Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 28
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- 108010025899 gelatin film Proteins 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 description 46
- 238000000034 method Methods 0.000 description 25
- 238000009826 distribution Methods 0.000 description 22
- 230000007797 corrosion Effects 0.000 description 17
- 238000005260 corrosion Methods 0.000 description 17
- 239000010419 fine particle Substances 0.000 description 15
- 239000007789 gas Substances 0.000 description 14
- 238000001878 scanning electron micrograph Methods 0.000 description 14
- 238000001514 detection method Methods 0.000 description 12
- 239000011148 porous material Substances 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 229910052736 halogen Inorganic materials 0.000 description 5
- 150000002367 halogens Chemical class 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 208000032544 Cicatrix Diseases 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000000333 X-ray scattering Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- -1 alkoxide compound Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007723 die pressing method Methods 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 231100000241 scar Toxicity 0.000 description 1
- 230000037387 scars Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
- C04B41/5035—Silica
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/82—Coating or impregnation with organic materials
- C04B41/84—Compounds having one or more carbon-to-metal of carbon-to-silicon linkages
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1229—Composition of the substrate
- C23C18/1245—Inorganic substrates other than metallic
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1254—Sol or sol-gel processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12993—Surface feature [e.g., rough, mirror]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249955—Void-containing component partially impregnated with adjacent component
- Y10T428/249956—Void-containing component is inorganic
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249955—Void-containing component partially impregnated with adjacent component
- Y10T428/249956—Void-containing component is inorganic
- Y10T428/249957—Inorganic impregnant
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249967—Inorganic matrix in void-containing component
- Y10T428/249969—Of silicon-containing material [e.g., glass, etc.]
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
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- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Structural Engineering (AREA)
- Mechanical Engineering (AREA)
- Thermal Sciences (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Dispersion Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Silicon Compounds (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
本發明,係有關於施加了表面處理之陶瓷構件、以及其之製造方法。更詳細而言,係有關於適合使用在供以進行加熱處理之構件、或者是適合使用在會被暴露於處理氣體氛圍、電漿氛圍或是熱處理時之真空氛圍中的構件處之表面處理陶瓷構件以及其之製造方法。進而,本發明,係有關於使用有表面處理陶瓷構件之真空處理裝置。
半導體裝置製造裝置之電漿處理室用構件等,係被暴露在腐蝕性氣體中。在此種構件中,係使用有在耐蝕性上為優良之陶瓷。此係因為,若是使用耐蝕性為劣之材料,則裝置壽命會變短,又,亦會有材料與腐蝕性氣體間之反應生成物成為粒子並附著在裝置上,而造成裝置之品質劣化的情況之故。在此種用途中,除了一般性的陶瓷材料(氧化鋁等)之外,亦使用有在耐蝕性上為更加優良之材料(AlN、Y2
O3
等)。
然而,僅靠材料之變更,係並無法對粒子完全地防止。亦即是,由於陶瓷構件係為脆性材料之加工品,因此,在表層處係必定會存在有凹部(氣孔、微碎裂、加工傷痕等)。而,會有在此凹部內而進入有在表面研削工程等之中所產生之微粒子的情況。此種凹部內微粒子,係難以藉由通常之洗淨工程來完全地除去。又,在陶瓷構件之製造工程中,亦會有產生微碎裂的情況。此種微粒子或是微碎裂,若是暴露在高溫氛圍、處理氣體氛圍、電漿氛圍或是熱處理時之真空氛圍等之中,則會成為粒子並飛散。
在先前技術中,作為對陶瓷構件之粒子的飛散作防止之方法,係進行有數種的提案。
在專利文獻1中,係揭示有相關於「一種將陶瓷製品洗淨之方法,其特徵為,係在前述陶瓷製品之被洗淨面上塗布溶劑,並接著使由對於此溶劑而為可溶性之材料所成的薄膜,與前述被洗淨面相接觸,再經由將前述薄膜從前述被洗淨面而剝離,來將前述被洗淨面洗淨。」的發明。在此發明中,由於經由溶劑,薄膜之對於被洗淨面的接觸部分係溶融,並追隨於被洗淨面之型態的凹凸而變形,因此,存在於被洗淨面上之粒子,係被包入至薄膜之溶融了的部分中。其結果,若是將薄膜從被洗淨面而剝離,則粒子係在薄膜之接觸面側處而被固定化,並成為被從被洗淨面上而除去。
在專利文獻2中,係揭示有一種相關於「一種氧化鋁陶瓷燒結體,其特徵為:係將一種由99.2重量%以上99.99重量%以下之氧化鋁和殘部為鋁以外之金屬的氧化物所成,而平均粒徑為0.5μm以上15μm以下,且密度為3.88g/cm3
以上3.97g/cm3
以下的燒結體、或者是進行了研削加工後之燒結體,在1000℃以上1550℃以下之溫度下,而進行了0.1小時以上6小時以下的加熱處理。」的發明。
又,作為使陶瓷材料之耐蝕性提升的方法,主要針對熔射陶瓷,亦提案有形成耐蝕性為高之皮膜的發明。
在專利文獻3中,係揭示有一種相關於「一種耐蝕性複合構件,係為在鹵素系腐蝕氣體環境下或是鹵素系腐蝕氣體之電漿環境下所被使用之耐蝕性複合構件,其特徵為,具備有:基材、和被設置在基材上之至少暴露在鹵素系腐蝕氣體或是鹵素系腐蝕氣體之電漿中的部位處之藉由陶瓷溶膠/凝膠所形成的被膜。」的發明。
在專利文獻4中,係揭示有一種相關於「一種複合皮膜之形成方法,其特徵為:在進行了熔射用之前置加工的基材表面上,熔射單一金屬或是合金又或是金屬陶瓷亦或是陶瓷,而後,塗布或是含浸在熔射皮膜內之氣孔中形成封孔物之浸透性為佳的封孔液,並在靜置等待乾燥或是進行熱處理而進行了封孔處理後,將使玻璃質形成成分作了溶解或是懸濁的液體藉由刷毛塗抹或是噴霧來進行塗布,並進行常溫乾燥或是藉由900℃以下之溫度來作燒成,藉由此,而形成玻璃質表層皮膜。」的發明。
在專利文獻5中,係揭示有一種相關於「一種複合被覆材料,係為被設置在陶瓷構件上之複合被覆材料,其特徵為,具備有:具有開氣孔之陶瓷多孔體、和被含浸於前述開氣孔中之樹脂。」的發明,於其之實施例中,係僅記載有陶瓷多孔體為經由熔射法所形成者。
在專利文獻6中,係記載有一種相關於「一種封孔處理陶瓷絕緣層,其特徵為:在經由熔射所得到之陶瓷絕緣層中,利用氣體與樹脂間之溫度差所致的收縮率之差異,來在產生於此陶瓷絕緣層中之氣孔的入口處形成由熱硬化性樹脂所成之封孔體。」的發明。
[專利文獻]
[專利文獻1]日本特開平11-21187號公報
[專利文獻2]日本特開平8-81258號公報
[專利文獻3]日本特開2003-335589號公報
[專利文獻4]日本特開2001-152307號公報
[專利文獻5]日本特開2003-119087號公報
[專利文獻6]日本特開2002-180233號公報
在專利文獻1中所記載之發明,係在陶瓷之表面上形成薄膜,並藉由將該薄膜從被洗淨面而剝離,來將成為粒子之原因的微粒子除去,但是,關於進入至粒界(Grain boundary)、氣孔中之微粒子的除去,係為困難。
在專利文獻2中所記載之發明,係經由1000~1550℃之熱處理,來將成為粒子之原因的微碎裂作修復,但是,係無法將進入至粒界或是氣孔中之微粒子除去。
在專利文獻3~6中所記載之發明,係均為以對於熔射陶瓷之皮膜形成作為目的者,而並非為對於粒子之問題作解決者。又,專利文獻3~5,由於係為在陶瓷表面之全面上而使皮膜形成者,因此,係無法發揮陶瓷之功能。
又,在經由陶瓷等之熔射來形成皮膜並減低粒子之方法的情況時,例如針對需要進行週期性的洗淨之構件,由於熔射本身會因為洗淨而從構件剝離,因此,在每一次或數次之洗淨後,係需要再度施加熔射。此一每次洗淨後之熔射費用,係成為裝置之運轉成本上升的重要原因。為了對此成本作削減,係成為需要發明一種恆久有效之處理方法。
本發明者們,係為了解決上述問題,而針對能夠在維持陶瓷燒結體所具有之優良的耐蝕性的同時亦能夠恆久性地防止粒子之產生的方法作了努力研究,其結果,係得到了下述之知識。
(A)若是將陶瓷燒結體之全面藉由皮膜而作了覆蓋,則係無法發揮陶瓷燒結體原本所具有的功能,而其之作為耐蝕性構件的功能,係成為被皮膜之性能所左右。又,當全面被覆的情況時,係存在有剝離等之耐久性的問題。故而,係以設為並不將陶瓷燒結體之全面(與處理氛圍相接觸之面的全面)作覆蓋的構成為理想。
(B)粒子之發生原因的其中之一,係在於:在燒成時或研削加工時等之中,由於陶瓷之微粒子的飛散所致者。此些之陶瓷微粒子,係會附著在陶瓷燒結體之表面上,且,就算是使用超音波洗淨等之於先前技術所週知之各種的洗淨方法,要將進入至結晶粒界之空隙、微小氣孔內、加工傷痕內等處之微粒子完全除去一事,亦為困難。故而,係並非應將殘存於此些之微小空間中的陶瓷粒子除去,而係需要將陶瓷微粒子固定在微小空間內。
(C)粒子之發生的另外一個原因,係為由於在陶瓷構件中所產生之微碎裂而發生的微小碎片在裝置運轉中脫落所導致者。故而,在陶瓷構件之表面上,係有必要存在用以對於微碎裂所致之微小碎片的脫落作防止的定著材。
(D)由上述(B)以及(C)之原因所致的粒子,係在裝置運用之較為初期的階段而大量地發生。圖5,係為在將先前技術之陶瓷構件以及於表面上被覆了定著材之陶瓷構件適用在半導體製造裝置中的情況時,對於其使用時間與粒子之發生量間的關係作展示的圖。如圖5中所示一般,當使用了先前技術之陶瓷構件的情況時,粒子之發生量,雖然會隨著持續運用而逐漸的降低,但是,一直到粒子數減少至能夠將構件供以使用的數量為止的期間中,係無法進行製品處理。但是,若是使用被覆了定著材之陶瓷構件,則從初期階段起便能夠降低粒子之發生量。而,定著材雖然會在裝置運用中而減少,但是,由上述(B)以及(C)中所記載之原因所致的粒子,係會隨著持續運用而減少。因此,存在有定著材之陶瓷構件,係能夠恆久性地將粒子之發生量抑制在低水準。
本發明,係為根據上述之知識而進行者,其目的,係在於提供一種:能夠使陶瓷燒結體發揮原本所具有之功能,同時亦不會發生粒子之飛散的陶瓷構件及其製造方法、以及使用有此種陶瓷構件之真空處理裝置。
本發明,係將下述(1)~(5)中所示之表面處理陶瓷構件、下述(6)以及(7)中所示之表面處理陶瓷構件之製造方法、還有下述(8)中所示之真空處理裝置作為要旨。
(1)一種表面處理陶瓷構件,係為在氣孔率為1%以下之陶瓷燒結體基材的至少一部份處而具備有皮膜形成表面之陶瓷構件,其特徵為:皮膜形成表面,係為由矽烷氧化物化合物共聚物之溶膠凝膠皮膜與基材表面混合存在所成。
(2)如上述(1)所記載之表面處理陶瓷構件,其中,前述溶膠凝膠皮膜之面積率,係為前述皮膜形成表面全體之5~80%。
(3)如上述(1)或(2)所記載之表面處理陶瓷構件,其中,在前述皮膜形成表面上,陶瓷燒結體基材表面之凹部,係選擇性地經由前述溶膠凝膠皮膜而被被覆。
(4)如上述(1)~(3)中之任一者所記載之表面處理陶瓷構件,其中,係被使用在真空處理裝置或是氛圍處理裝置中。
(5)如上述(4)所記載之表面處理陶瓷構件,其中,至少在與處理氛圍相接之部分處,係被形成有前述皮膜形成表面。
(6)一種表面處理陶瓷構件之製造方法,其特徵為:在氣孔率為1%以下之陶瓷燒結體基材表面上,塗布由矽烷氧化物化合物聚合物之溶膠凝膠所成的皮膜材,而後,以會使硬化前之皮膜材殘存於陶瓷燒結體表面之凹部中一般的條件,來將皮膜材之一部分除去,並使殘存於陶瓷燒結體表面之凹部中的皮膜材硬化。
(7)如上述(6)所記載之表面處理陶瓷構件之製造方法,其中,皮膜材之一部份的除去,係藉由擦拭而進行。
(8)一種真空處理裝置,其特徵為:係使用有如上述(1)~(5)中之任一者所記載之表面處理陶瓷構件。
若藉由本發明,則能夠發揮陶瓷燒結體原本所具備之功能、亦即是能夠發揮優良之耐蝕性,同時,能夠對於起因於在燒結、研削加工等時所發生並殘存在陶瓷燒結體表面之氣孔內等的微小空間中之微粒子或是微碎裂而導致的粒子之飛散作防止。進而,若藉由本發明,則從裝置運用之初期階段起,便能夠進行成膜處理等之必要的處理。
作為陶瓷燒結體,係為了發揮原本之化學性的安定功能,而使用藉由氣孔率1%以下之緻密質而呈現微小組織者。此係因為,若是氣孔率超過1%,則其之機械性特性以及耐蝕性係降低之故。又,當陶瓷熔射被膜的情況時,由於相較於作了緻密的燒結之燒結體,係為多孔質,且進而在機械性強度為弱的同時,比表面積亦為大,因此,在耐蝕性以及耐蝕性上係為差。故而,由於其係為容易因脫粒等而導致粒子發生之材料,因此係無法利用在本發明之表面處理陶瓷構件中。
在本發明所使用之陶瓷構件中,雖並未特別限定,但是,係可使用氧化鋁、氧化釔、氧化鋯、富鋁紅柱石、堇青石、碳化矽、氮化矽、氮化鋁、賽綸陶瓷(Sialon)等之一般性的陶瓷材料。其中,特別是以使用在耐蝕性以及耐熱性上為優良之氧化鋁、氮化鋁、氧化釔等為理想。
在陶瓷燒結體之製造方法中,係並未特別作限定,只要採用一般之製造方法即可。例如,係可在平均粒徑為0.01~1μm左右之粉末原料中,添加週知之成形黏結劑,並藉由噴霧乾燥法等之週知的方法來造粒,而後,藉由模具衝壓、CIP(冷均壓成形)而得到成形體,並將成形體作燒結,而製造之。在粉末原料中,亦可因應於需要而添加週知之燒結助劑。此時,若是氧化物系陶瓷,則係可使用大氣爐。又,若是非氧化物系陶瓷,則可使用真空爐,亦可使用氮、氬等之氛圍燒成爐。
本發明之表面處理陶瓷構件,係為在上述之陶瓷燒結體的表面上,形成由矽烷氧化物化合物聚合物之溶膠凝膠所成的皮膜者。此係因為,矽烷氧化物化合物,係在室溫下或是藉由加熱而進行重合反應,並容易的硬化,且在裝置運轉中亦會安定地存在之故。又,亦因為,當被處理之裝置係為由矽系材料所構成的情況時,就算是有飛散的情況,亦難以導致不良影響之故。進而,矽烷氧化物化合物聚合物之溶膠凝膠膜,在能夠使用溶液來形成膜而為簡便之點上,亦具備有優點。
上述之皮膜,係以在存在於陶瓷燒結體之至少於半導體製造裝置等之中而暴露在處理氛圍中的表面處之凹部(結晶粒界之空隙、微小氣孔、加工傷痕等)中選擇性地作填埋,而在凹部以外之部分處則使陶瓷燒結體露出的方式而被形成,陶瓷燒結體之處理表面為由陶瓷燒結體基材之表面與皮膜之表面混合存在所成一事,係為必要條件。於此,所謂處理氛圍,係為處理氣體氛圍(氬氣、氫氣、鹵素氣體等之腐蝕氣體等)、電漿氛圍、熱處理時之真空氛圍等。
如前述一般,在陶瓷燒結體之凹部中,係殘存有微粒子等,又,在燒成工程、加工工程等之中,係會有形成微碎裂的情況。上述之皮膜,係將凹部選擇性地作被覆,並將存在於該處之微粒子捕捉而防止飛散,同時,亦防止由於微碎裂之產生所導致的微小碎片之脫落。另一方面,在耐蝕性上為優良之陶瓷燒結體,則係露出。此陶瓷燒結體作露出之面,由於係為原本便沒有凹陷而為平滑之部分,因此,係容易藉由洗淨等來將微粒子除去,且粒子亦難以發生,因此,於此部分,係為應使陶瓷燒結體露出並讓其發揮原本之功能的部位。
在陶瓷燒結體之處理表面上的皮膜之面積率,係以佔據表面處理面全體之5~80%為理想。亦即是,當皮膜之面積率未滿5%的情況時,上述之微粒子等的捕捉效果係成為不充分,而有無法防止粒子的飛散之虞,另一方面,若是該面積率超過80%,則係有無法發揮陶瓷燒結體之原本的功能之虞。
皮膜之面積率,係可藉由以下之方法而求取出來。
(1)藉由波長分散型之電子探針微分析機(EPMA)來對於表面處理陶瓷構件之任意場所而將由來於皮膜材之主要元素(例如,當Si系烷氧化物化合物的情況時,主要元素係為Si)的分布比例作映射。
(2)藉由與上述(1)相同之方法,而對於由來於陶瓷基材之主要元素(例如,當氧化鋁的情況時,主要元素係為Al)的分布比例作映射,並確認係成為互補關係。
(3)由所檢測出之X線檢測強度與其之面積比,來求取出由來於皮膜材之主要元素的面積率,並將此作為皮膜之面積率。具體而言,為了將由於X線散射、表面性質形狀所致之雜訊的影響除外,係將成為X線檢測強度之最大值的0.20倍之值作為臨限值,並將X線檢測強度劃分為二個區分,而將X線檢測強度成為臨限值以上之區域處的面積率,作為皮膜之面積率。
為了在處理表面上使基材表面與皮膜表面混和存在,係可將前述之皮膜材塗布在陶瓷燒結體上,並在其完全硬化前,藉由廢料布等來作擦拭,並使其乾燥、硬化。此作業,雖然就算是僅進行1次亦能夠發揮效果,但是,係以進行2次以上為更理想。作為基材表面,除了研削面以外,亦可為燒成面、熱處理面、噴砂面等。
於此,在較為平滑之面(於此面上,係難以殘存微粒子)處,皮膜液係可容易地除去,但是,在凹部(氣孔等)之中,皮膜液係殘存,而此係乾燥、硬化,而陶瓷燒結體之凹部係被作被覆。被形成於凹部之皮膜,由於係藉由投錨(Anchor)效果而被強固地作被覆,因此,係不會有脫落之虞。
製作具備有表1中所揭示之組成以及氣孔率的各種之陶瓷基材(面粗度為Ra:0.7±0.1μm,尺寸為30mm×30mm×2.5mm),並於此些處塗布表1中所示之皮膜材,再藉由廢棄布來作擦拭,而後將所得者作為試驗片。針對各種試驗片,而求取出了該皮膜之面積率以及粒子之發生個數。又,針對一部份的實施例,係實際地製作半導體製造裝置之真空槽內構件,並安裝在裝置上,而對使用狀況作了調查。
使用SEM試驗用濺鍍成膜裝置(Sanyu-Electron公司製,SC-704),並對試驗片預先進行金蒸鍍,而形成導電膜,再藉由分析裝置(日本電子製,JXA-8100),來經由100μm×100μm視野、加速電壓15kV的條件,而對於SEM影像和由來於基材之元素以及由來於皮膜材之元素的分布作掃描,並作映射顯示。藉由此,而確認了:由來於基材之元素以及由來於皮膜材之元素的分布,係成為互補關係。而後,將成為所檢測出之X線檢測強度之最大值的0.20倍之值作為臨限值,並劃分為二個區分,而將X線檢測強度成為臨限值以上之區域處的面積率,作為皮膜之面積率。
在裝入了純水之燒杯中,插入各試驗片,並將此燒杯裝著在具備有超音波發訊機之槽中,而後,在室溫下而使其負荷104kHz之超音波,並將在燒杯之純水中所飛散之粒子的數量,藉由粒子計數器(測定範圍0.5~20μm)來作測定,並將1μm以上之粒子的數量展示於表1中。
如表1中所示一般,在本發明例1~5中,粒子數係為18~81個/ml,而為良好。以下,將關於本發明例1以及3之SEM影像、和由來於基材之元素以及由來於皮膜之元素的分布作展示,同時,對於從皮膜由來之元素的分布來求取出皮膜之面積率的手法作具體說明。
於圖1中,係展示本發明例1之SEM影像、和Al(由來於基材之元素)以及Si(由來於皮膜之元素)之以X線檢測強度之最大值作為基準所得的分布,於圖2中,係展示本發明例1之SEM影像、和依據上述之手法而作了2區分化之Si(由來於皮膜之元素)的分布。另外,圖中之SL,係為SEM影像,Si係代表Si之分布,Al係代表Al之分布。圖1、2之SEM影像以及Al、Si之分布圖,由於係為同一部分,且係以1:1而作對應,因此,係能夠將該些分別作重合。
如圖1中所示一般,在本發明例1中,Al與Si係成為互補關係,而能夠得知基材表面與皮膜表面係混合存在。又,如圖2中所示一般,在Si之分布中的X線檢測強度之最大值,係為240,當將該值之0.20倍之48作為臨限值並劃分為2個區分時,在X線檢測強度成為臨限值以上之區域處的面積率(皮膜之面積率),係為16.0%。
於圖3中,係展示本發明例3之SEM影像、和Al(由來於基材之元素)以及Si(由來於皮膜之元素)之以X線檢測強度之最大值作為基準所得的分布,於圖4中,係展示本發明例3之SEM影像、和依據上述之手法而作了2區分化之Si(由來於皮膜之元素)的分布。另外,圖中之SL,係為SEM影像,Si係代表Si之分布,Al係代表Al之分布。圖3、4之SEM影像以及Al、Si之分布圖,由於係為同一部分,且係以1:1而作對應,因此,係能夠將該些分別作重合。
如圖3中所示一般,在本發明例3中,亦同樣的,Al與Si係成為互補關係,而能夠得知基材表面與皮膜表面係混合存在。又,如圖4中所示一般,在Si之分布中的X線檢測強度之最大值,係為310,當將該值之0.20倍之62作為臨限值並劃分為2個區分時,在X線檢測強度成為臨限值以上之區域處的面積率(皮膜之面積率),係為50.9%。
另一方面,比較例1,係為將氧化鋁作為基材而使用之例,比較例2,係為將被週知為耐蝕性高之材料的氧化釔(Y2
O3
)作為基材而使用之例,但是,由於兩者均未形成皮膜,因此,粒子數係為多。又,在將皮膜形成於全面上之比較例3中,雖然起初之粒子數係為少,但是,若是作為半導體製造裝置之處理室構件而使用了2小時,則係發生剝離,而粒子數係急遽增加。比較例4~7,雖然均為在基材中使用熔射陶瓷者,但是,該些之氣孔率係均為大,就算是使皮膜形成,亦無法得到使粒子數減少的效果。
針對表1中所示之本發明例3以及比較例1,係作為在半導體製造裝置電漿處理槽中所使用之防著板而作設置,並使用粒子計數器(KLA-Tencor公司製SPI)來對於粒子之發生數作了調查。該調查,係對於25枚之晶圓而進行電漿處理,並對於第1、第5、第10、第15、第20以及第25枚之合計6枚的晶圓,而對於存在於晶圓上之1μm以上的粒子數作了測定。將其結果展示於表2。又,針對本發明例3之陶瓷構件,係將在通常維修時而成為需要之洗淨進行5次,並再度安裝於裝置上,再藉由與上述相同之方法來對粒子之發生數作了調查。將其結果,作為本發明例6而一併記載於表2。
如表2中所示一般,在比較例1之陶瓷構件中,在任一之晶圓處,粒子均係以平均16.8個而附著有多數,但是,在本發明例3之陶瓷構件中,平均係為1.0個,而幾乎沒有粒子之附著。又,就算是在實施了5次之洗淨的本發明例6之陶瓷構件中,亦為平均3.3個而為少,故能夠確認到,就算是在洗淨後,本發明之效果亦仍係被維持。
若藉由本發明,則能夠發揮陶瓷燒結體原本所具備之功能、亦即是能夠發揮優良之耐蝕性,同時,能夠對於起因於在燒結、研削加工等時所發生並殘存在陶瓷燒結體表面之氣孔內等的微小空間中之微粒子或是微碎裂而導致的粒子之飛散作防止。故而,本發明之表面處理陶瓷構件,係最適合於作為在例如半導體裝置製造裝置、液晶顯示器製造裝置、精密分析機器之加熱單元等之中而會暴露在高溫氛圍、處理氣體氛圍或是電漿氛圍等之中的構件來使用。
[圖1]本發明例1之SEM影像,以及Al(由來於基材之元素)和Si(由來於皮膜之元素)的分布。
[圖2]本發明例1之SEM影像,以及根據上述之手法而作了二分化的Si(由來於皮膜之元素)之分布。
[圖3]本發明例3之SEM影像,以及Al(由來於基材之元素)和Si(由來於皮膜之元素)的分布。
[圖4]本發明例3之SEM影像,以及根據上述之手法而作了二分化的Si(由來於皮膜之元素)之分布。
[圖5]在將先前技術之陶瓷構件以及於表面上被覆了定著材之陶瓷構件適用在半導體製造裝置中的情況時,對於其使用時間與粒子之發生量間的關係作展示的圖。
Claims (6)
- 一種表面處理陶瓷構件,係為在氣孔率為1%以下之陶瓷燒結體基材的至少一部份處而具備有皮膜形成表面之陶瓷構件,其特徵為:皮膜形成表面,係為由矽烷氧化物化合物聚合物之溶膠凝膠皮膜與基材表面混合存在所成,前述溶膠凝膠皮膜之面積率,係為前述皮膜形成表面全體之5~80%,在前述皮膜形成表面上,陶瓷燒結體基材表面之凹部,係選擇性地經由前述溶膠凝膠皮膜而被被覆。
- 如申請專利範圍第1項中之任一項所記載之表面處理陶瓷構件,其中,係被使用在真空處理裝置或是氛圍處理裝置中。
- 如申請專利範圍第2項所記載之表面處理陶瓷構件,其中,至少在與處理氛圍相接之部分處,係被形成有前述皮膜形成表面。
- 一種表面處理陶瓷構件之製造方法,其特徵為:在氣孔率為1%以下之陶瓷燒結體基材表面上,塗布由矽烷氧化物化合物聚合物之溶膠凝膠所成的皮膜材,而後,以會使硬化前之皮膜材殘存於陶瓷燒結體表面之凹部中一般的條件,來將皮膜材之一部分除去,並使殘存於陶瓷燒結體表面之凹部中的皮膜材硬化。
- 如申請專利範圍第4項所記載之表面處理陶瓷構件之製造方法,其中,皮膜材之一部份的除去,係藉由擦拭 而進行。
- 一種真空處理裝置,其特徵為:係使用有如申請專利範圍第1~3項中之任一項所記載之表面處理陶瓷構件。
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