CN102123970B - 表面处理陶瓷构件、其制造方法及真空处理装置 - Google Patents
表面处理陶瓷构件、其制造方法及真空处理装置 Download PDFInfo
- Publication number
- CN102123970B CN102123970B CN200980132385.4A CN200980132385A CN102123970B CN 102123970 B CN102123970 B CN 102123970B CN 200980132385 A CN200980132385 A CN 200980132385A CN 102123970 B CN102123970 B CN 102123970B
- Authority
- CN
- China
- Prior art keywords
- epithelium
- ceramic
- ceramic member
- treated
- sintered bodies
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 114
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 238000012545 processing Methods 0.000 title claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- -1 silicon alkoxide compound Chemical class 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 210000000981 epithelium Anatomy 0.000 claims description 76
- 239000000463 material Substances 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 36
- 238000005245 sintering Methods 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 238000009434 installation Methods 0.000 claims description 8
- 238000009489 vacuum treatment Methods 0.000 claims description 7
- 238000006116 polymerization reaction Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 abstract description 39
- 239000011248 coating agent Substances 0.000 abstract description 9
- 238000000576 coating method Methods 0.000 abstract description 9
- 238000005260 corrosion Methods 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 5
- 229920000642 polymer Polymers 0.000 abstract 1
- 238000009826 distribution Methods 0.000 description 21
- 239000007789 gas Substances 0.000 description 14
- 230000003628 erosive effect Effects 0.000 description 13
- 239000011148 porous material Substances 0.000 description 13
- 238000005406 washing Methods 0.000 description 13
- 239000002131 composite material Substances 0.000 description 10
- 239000008187 granular material Substances 0.000 description 9
- 230000006870 function Effects 0.000 description 8
- 238000005507 spraying Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 238000007669 thermal treatment Methods 0.000 description 6
- 230000000295 complement effect Effects 0.000 description 5
- 229910052736 halogen Inorganic materials 0.000 description 5
- 150000002367 halogens Chemical class 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 238000004453 electron probe microanalysis Methods 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 231100000241 scar Toxicity 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000004568 cement Substances 0.000 description 2
- 238000009694 cold isostatic pressing Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000000333 X-ray scattering Methods 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000033001 locomotion Effects 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000036299 sexual function Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/82—Coating or impregnation with organic materials
- C04B41/84—Compounds having one or more carbon-to-metal of carbon-to-silicon linkages
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
- C04B41/5035—Silica
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1229—Composition of the substrate
- C23C18/1245—Inorganic substrates other than metallic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1254—Sol or sol-gel processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12993—Surface feature [e.g., rough, mirror]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249955—Void-containing component partially impregnated with adjacent component
- Y10T428/249956—Void-containing component is inorganic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249955—Void-containing component partially impregnated with adjacent component
- Y10T428/249956—Void-containing component is inorganic
- Y10T428/249957—Inorganic impregnant
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249967—Inorganic matrix in void-containing component
- Y10T428/249969—Of silicon-containing material [e.g., glass, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Structural Engineering (AREA)
- Mechanical Engineering (AREA)
- Thermal Sciences (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Dispersion Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Silicon Compounds (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
一种表面处理陶瓷构件,其为气孔率为1%以下的陶瓷烧结体基材的至少部分具有皮膜形成表面的陶瓷构件,皮膜形成表面是由硅醇盐化合物聚合体的溶胶凝胶皮膜和基材表面混杂存在而成的,具体而言,所述溶胶凝胶皮膜的面积率为皮膜形成表面整体的5~80%。该表面处理陶瓷构件具有优异的耐腐蚀性,不存在颗粒的飞散。
Description
技术领域
本发明涉及实施了表面处理的陶瓷构件以及其制造方法。更详细而言,涉及适合用于供于加热处理的构件、或用于暴露于处理气体气氛、等离子体气氛、或热处理时的真空气氛的构件中的表面处理陶瓷构件、及其制造方法。本发明还涉及使用了表面处理陶瓷构件的真空处理装置。
背景技术
半导体器件制造装置的等离子体腔室用构件等被暴露于腐蚀性气体中。这类构件中通常使用耐腐蚀性优异的陶瓷。这是由于耐腐蚀性差的材料会使装置寿命缩短,此外,材料与腐蚀性气体的反应产物有时还以颗粒(particle)形式附着在器件上而导致器件品质劣化。这类用途中,除使用通常的陶瓷材料(氧化铝等)外,也使用耐腐蚀性更优异的材料(AlN、Y2O3等)。
然而,仅改变材料并不能完全防止颗粒。即,由于陶瓷构件为脆性材料的加工品,其表层必然存在凹部(气孔、微细裂纹、加工伤痕等)。表面磨削工序等中产生的微粒有时会进入该凹部内。通过通常的洗涤工序难以完全除去这类凹部内微粒。此外,陶瓷构件的制造工序中有时也会产生微细裂纹。当这类微粒或微细裂纹暴露于高温气氛、处理气体气氛、等离子体气氛或热处理时的真空气氛等时,会以颗粒形式飞散。
迄今为止,在防止陶瓷构件的颗粒飞散的方法方面,已提出了一些提案。
专利文献1中公开了关于陶瓷制品的洗涤方法的如下技术方案:“一种陶瓷制品的洗涤方法,其特征在于,其是洗涤陶瓷制品的方法,将溶剂涂布于所述陶瓷制品的被洗涤面;接着使所述被洗涤面与由在该溶剂中为可溶性的材料形成的薄膜接触;通过将所述薄膜从所述被洗涤面剥离,从而对所述被洗涤面进行洗涤”。该发明中,通过溶剂来熔融薄膜的与被洗涤面相接触的部分,由于该接触部分追随被洗涤面的形态的凹凸,被洗涤面中存在的颗粒被包入薄膜的熔融部分中。其结果是,将薄膜从被洗涤面剥离时,颗粒被固定在薄膜的接触面侧,从被洗涤面被除去。
专利文献2中公开了关于氧化铝陶瓷烧结体的如下技术方案:“一种氧化铝陶瓷烧结体,其特征在于,将烧结体、或磨削加工后的烧结体在1000℃以上、1550℃以下的温度下加热处理0.1小时以上、6小时以下,所述烧结体由99.2重量%以上且99.99重量%以下的氧化铝、和剩余部分即铝以外金属的氧化物构成,平均粒径为0.5μm以上、15μm以下,且密度为3.88g/cm3以上、3.97g/cm3以下”。
此外,作为提高陶瓷材料的耐腐蚀性的方法,主要针对喷涂陶瓷(Sprayed Ceramic)而提出了形成耐腐蚀性高的皮膜的技术方案。
专利文献3中公开了关于耐腐蚀性复合构件的技术方案:“耐腐蚀性复合构件,其特征在于,其为在卤素系腐蚀气体环境下或卤素系腐蚀气体的等离子体的环境下使用的耐腐蚀性复合构件,其具有基材和设置于基材上的至少暴露于卤素系腐蚀气体或卤素系腐蚀气体的等离子体的部位的由陶瓷溶胶/凝胶形成的被膜”。
专利文献4中公开了关于复合皮膜的形成方法的技术方案:“一种具有耐腐蚀性、耐长期使用的复合皮膜的形成方法,其特征在于,在喷涂用的经前加工的基材表面喷涂单一金属、合金、陶瓷合金或陶瓷,之后涂布或浸渍用于在喷涂皮膜内的气孔中形成封孔物的渗透性良好的封孔液,实施时效处理或热处理而进行封孔处理后,通过刷涂或喷涂溶解或悬浮有玻璃质形成成分的液体,常温干燥或在900℃以下的温度下烧成,从而形成玻璃质表层皮膜”。
专利文献5中公开了关于复合涂层材料的技术方案:“一种复合涂层材料,其特征在于,其为设置于陶瓷构件上的复合涂层材料,其包括具有开放气孔(open pore)的陶瓷多孔体和所述开放气孔中所浸渍的树脂”,其实施例中仅记载有陶瓷多孔体是通过喷涂法形成的。
专利文献6中公开了关于封孔处理陶瓷绝缘层的技术方案:“封孔处理陶瓷绝缘层,其为通过喷涂而获得的陶瓷绝缘层,其特征在于,利用气体和树脂间的温度差所产生的收缩率之差,在该陶瓷绝缘层中所产生的气孔的入口处形成有由热固性树脂构成的封孔体”。
现有技术文献
专利文献
专利文献1:日本特开平11-21187
专利文献2:日本特开平8-81258
专利文献3:日本特开2003-335589
专利文献4:日本特开2001-152307
专利文献5:日本特开2003-119087
专利文献6:日本特开2002-180233
发明内容
发明要解决的问题
专利文献1中记载的技术方案是在陶瓷的表面形成薄膜、并通过将该薄膜从被洗涤面剥离从而除去作为颗粒成因的微粒,但难以除去进入晶界、气孔内的微粒。
专利文献2中记载的技术方案是通过1000~1550℃的热处理而修复作为颗粒成因的微细裂纹,但无法除去进入晶界、气孔内的微粒。
专利文献3~6中记载的技术方案均是以在喷涂陶瓷上形成皮膜为目的,原本就不是为了解决颗粒的问题。此外,专利文献3~5由于是使陶瓷整个表面形成皮膜,因此无法发挥陶瓷的功能。
此外,在通过陶瓷等的喷涂而形成皮膜以减少颗粒的方法的情况下,例如,对于需要周期性进行洗涤的部件而言,由于喷涂自身随着洗涤而从构件剥离,所以随着每次洗涤或多次洗涤而需要再次实施喷涂。该每次洗涤而产生的喷涂费用为装置的运转成本上升的重要因素。为了削减该成本,需要一种恒久、有效的处理方法的技术方案。
本发明人等为了解决上述问题,对在维持陶瓷烧结体所具有的优异耐腐蚀性的同时恒久防止颗粒的产生的方法进行了深入研究,结果获得下述见解。
(A)用皮膜覆盖陶瓷烧结体的整面时,无法发挥陶瓷烧结体原本具有的功能,作为耐腐蚀性构件的功能受皮膜性能的左右。此外,整面覆盖时存在剥离等耐久性的问题。因此,期望不覆盖陶瓷烧结体的整面(与处理气氛相接触的面的整面)的方案。
(B)颗粒产生的一个原因是由于烧成时、磨削加工时等产生的陶瓷微粒的飞散。这些陶瓷微粒附着在陶瓷烧结体表面,但即使使用超声波洗涤等目前已知的各种洗涤方法,也难以完全除去已进入到晶体晶界的间隙、微小气孔内、加工伤痕内等的微粒。因此,需要的并非是除去这些微小空间中残存的陶瓷微粒而是将陶瓷微粒固定在微小空间内。
(C)颗粒产生的另一个原因是由于在陶瓷构件中产生的微细裂纹所产生的微小片在装置运转中脱落。因此,在陶瓷构件的表面需要存在固定材料,以防止微细裂纹所导致的微小片的脱落。
(D)基于上述(B)和(C)中所述原因而产生的颗粒,其在装置使用的比较初期的阶段会大量产生。图5是表示将目前的陶瓷构件和表面覆盖有固定材料的陶瓷构件应用于半导体制造装置时的、使用时间与颗粒的产生量的关系的图。如图5所示,使用现有的陶瓷构件时,颗粒的产生量由于使用的持续而缓缓降低,在颗粒数减少至能够使用的数目之前无法进行制品处理。然而,如果使用覆盖有固定材料的陶瓷构件,能够从初期阶段开始即降低颗粒的产生量。并且,在装置使用中固定材料减少,但基于上述(B)和(C)中所述的原因而产生的颗粒在持续使用期间内也降低。因此,存在有固定材料的陶瓷部件能够恒久地将颗粒的产生量抑制在较低水平。
本发明是基于上述见解而进行的,目的在于提供在维持陶瓷烧结体原本所具有的功能的同时不产生颗粒飞散的陶瓷构件和其制造方法、以及使用了这种陶瓷构件的真空处理装置。
用于解决问题的方案
本发明的主旨在于下述(1)~(5)所示的表面处理陶瓷构件、下述(6)和(7)所示的表面处理陶瓷构件的制造方法、以及下述(8)所示的真空处理装置。
(1)一种表面处理陶瓷构件,其为孔隙率为1%以下的陶瓷烧结体基材的至少部分具有皮膜形成表面的陶瓷构件,皮膜形成表面是由硅醇盐化合物聚合体的溶胶凝胶皮膜和基材表面混杂存在而成的。
(2)根据上述(1)的表面处理陶瓷构件,所述溶胶凝胶皮膜的面积率为所述皮膜形成表面整体的5~80%。
(3)根据上述(1)或(2)的表面处理陶瓷构件,在所述皮膜形成表面中,陶瓷烧结体基材表面的凹部被所述溶胶凝胶皮膜选择性覆盖。
(4)根据上述(1)~(3)中任意一项的表面处理陶瓷构件,其用于真空处理装置或气氛处理装置。
(5)根据上述(4)的表面处理陶瓷构件,至少在与处理气氛接触的部分形成有所述皮膜形成表面。
(6)一种表面处理陶瓷构件的制造方法,其特征在于,在孔隙率为1%以下的陶瓷烧结体基材的表面涂布由硅醇盐化合物聚合体的溶胶凝胶构成的皮膜材料,然后在满足固化前的皮膜材料残存于陶瓷烧结体表面的凹部的条件下除去部分皮膜材料,并使残存于陶瓷烧结体表面的凹部的皮膜材料固化。
(7)根据上述(6)的表面处理陶瓷构件的制造方法,除去部分皮膜材料是通过擦拭进行的。
(8)一种真空处理装置,其使用了上述(1)~(5)中任意一项的表面处理陶瓷构件。
发明的效果
根据本发明,能够在发挥陶瓷烧结体原本所具有的功能、即优异的耐腐蚀性的同时,防止烧结时、磨削加工等时产生的、因陶瓷烧结体表面的气孔内等微小空间内残存的微粒或因微细裂纹而产生的颗粒的飞散。进而,由此能够从装置使用的初期阶段即进行成膜处理等必要处理。
附图说明
图1:本发明例1的SEM像以及Al(来自基材的元素)和Si(来自皮膜的元素)的分布。
图2:本发明例1的SEM像、和按照上述方法分成2个区域时的Si(来自皮膜的元素)的分布。
图3:本发明例3的SEM像以及Al(来自基材的元素)和Si(来自皮膜的元素)的分布。
图4:本发明例3的SEM像、和按照上述方法分成2个区域时的Si(来自皮膜的元素)的分布。
图5:是表示将目前的陶瓷构件和表面覆盖有固定材料的陶瓷构件应用于半导体制造装置时的、使用时间与颗粒的产生量的关系的图。
具体实施方式
1.陶瓷烧结体
作为陶瓷烧结体,为表现其原本的化学稳定性功能,而使用孔隙率为1%以下的呈现致密的微小组织的陶瓷烧结体。这是由于,孔隙率超过1%时,机械特性和耐腐蚀性将降低。此外,陶瓷喷涂被膜的情况下,其与致密烧结的烧结体相比为多孔性,进而机械强度弱且比表面积大,因此耐腐蚀性、耐久性也差。因此,其为容易因脱粒等而产生颗粒的材料,因此,无法用于本发明的表面处理陶瓷构件。
本发明中使用的陶瓷材料没有特别限制,可使用氧化铝、氧化钇、氧化锆、莫来石、堇青石、碳化硅、氮化硅、氮化铝、赛隆(sialon)等通常的陶瓷材料。其中,特别期望使用耐腐蚀性及耐热性优异的氧化铝、氮化铝、氧化钇等。
陶瓷烧结体的制造方法没有特别限制,采用通常的制造方法即可。例如,可如下制造:在平均粒径为0.01~1μm左右的粉末原料中添加公知的成形粘合剂,通过喷雾干燥法等公知的方法造粒,然后通过模压、CIP(Cold Isostatic Pressing,冷等静水压成型)而获得成形体,将其烧成而制造。根据需要,粉末原料中也可以添加公知的烧结助剂。此时,如果是氧化物系陶瓷,可使用大气炉。此外,如果是非氧化物系陶瓷,除真空炉外,可使用氮气、氩气等气氛的烧成炉。
2.皮膜材料
本发明的表面处理陶瓷构件中,在上述陶瓷烧结体的表面形成有由硅醇盐化合物聚合体的溶胶凝胶膜构成的皮膜。这是由于,硅醇盐化合物在室温下或通过加热进行聚合反应而容易固化,在装置运转中也稳定地存在。此外,还由于在被处理的器件由硅系材料构成的情况下,即使飞散也不会产生不良影响。进而,硅醇盐化合物聚合体的溶胶凝胶膜能够使用溶液来形成膜,因而还具有简便的优点。
上述皮膜必须以下述方式形成:皮膜至少被选择性埋入存在于陶瓷烧结体的在半导体制造装置等中暴露于处理气氛的表面的凹部(晶体晶界的间隙、微小气孔、加工伤痕等),并使陶瓷烧结体在凹部以外的部分露出,并且,在陶瓷烧结体的处理表面中,陶瓷烧结体基材的表面和皮膜的表面必须混杂存在。在此,处理气氛是指处理气体气氛(氩气、氢气、卤素等腐蚀气体等)、等离子体气氛、热处理时的真空气氛等。
这如前所述,陶瓷烧结体的凹部残存着微粒等,此外,存在在烧成工序、加工工序等中形成微细裂纹的情况。上述的皮膜选择性覆盖凹部,并捕捉其中存在的微粒而防止飞散,同时还发挥防止由于微细裂纹产生而产生的微小片的脱落的作用。另一方面,使耐腐蚀性优异的陶瓷烧结体露出。该陶瓷烧结体露出的面由于原本为没有凹陷的平滑部分,因此容易通过洗涤等除去微粒,不易产生颗粒,因而该部分是使陶瓷烧结体露出、发挥原本的功能的部位。
陶瓷烧结体的处理表面中的皮膜的面积率期望为占表面处理面整体的5~80%。即,皮膜的面积率小于5%的情况下,上述的微粒等的捕捉效果变得不充分,可能无法防止颗粒的飞散,另一方面,其面积率超过80%的话,可能无法发挥陶瓷烧结体原本的功能。
皮膜的面积率可通过以下方法求出。
(1)对表面处理陶瓷构件的任意位置利用波长分散型的电子探针显微分析(EPMA)绘制来自皮膜材料的主要元素(例如,Si系醇盐化合物的情况下主要元素为Si。)的分布比率图。
(2)通过与上述(1)同样的方法绘制来自陶瓷基材的主要元素(例如,氧化铝的情况下主要元素为Al。)的分布比率图,确认为互补关系(complementary relation)。
(3)由进行检测的X射线检测强度和其面积比求出来自皮膜材料的主要元素的面积率,将其作为皮膜的面积率。具体而言,为消除X射线散射、表面性状带来的噪声的影响,以X射线检测强度的最大值的0.20倍的值作为阈值,将X射线检测强度分成2部分,将X射线检测强度大于等于阈值的区域中的面积率作为皮膜的面积率。
为了使处理表面中基材表面和皮膜表面混杂存在,将前述皮膜材料涂布在陶瓷烧结体上并在其完全固化前用废布等擦拭、干燥、固化,这是有用的。1次该操作即能发挥效果,但更期望进行2次以上。作为基材表面,除磨削面外,还可以是烧成面、热处理面、等离子体面等。
这里,在比较平滑的面(该面中不易残存微粒)中,皮膜液能够容易地除去,但凹部(气孔等)中残存皮膜液,其干燥、固化后覆盖陶瓷烧结体的凹部。凹部中形成的皮膜通过锚定效果而牢固覆盖,因此不必担心脱落。
实施例1
制作具有表1所述的组成和孔隙率的各种陶瓷基材(表面粗糙度Ra:0.7±0.1μm、尺寸:30mm×30mm×2.5mm),在这些陶瓷基材上涂布表1所示的皮膜材料,用废布擦拭,将其作为试验片。对各种试验片求出其皮膜的面积率和颗粒的产生个数。此外,对部分实施例实际制作半导体制造装置的真空槽内部件,并安装于装置中调查使用状况。
<皮膜的面积率>
使用SEM试验用溅射成膜装置(Sanyu Electron Co.,Ltd.制,SC-704),对试验片进行预备金蒸镀,形成导电膜,通过分析装置(日本电子制、JXA-8100),利用100μm×100μm视野、加速电压15kV的条件,扫描SEM像、以及来自基材的元素和来自皮膜材料的元素的分布,并作图进行表示。由此确认来自基材的元素和来自皮膜材料的元素的分布为互补关系。然后,以进行检测的X射线检测强度的最大值的0.20倍的值为阈值而分成2部分,将X射线检测强度大于等于阈值的区域中的面积率作为皮膜的面积率。
<颗粒数>
将各试验片插入装有纯水的烧杯中,将该烧杯安装到具有超声波发生器的槽中后,在室温下施加1分钟104kHz的超声波,用液体中颗粒计数器测定飞散到烧杯的纯水中的颗粒数(测定范围0.5~20μm),将1μm以上的颗粒的数示于表1。
表1
*是指偏离本发明规定的范围。
**未擦拭
如表1所示,本发明例1~5中,颗粒数为18~81个/ml,结果良好。下面,对本发明例1和3表示出SEM像以及来自基材的元素和来自皮膜的元素的分布,同时具体说明由来自皮膜的元素的分布求出皮膜的面积率的方法。
图1表示本发明例1的SEM像以及Al(来自基材的元素)和Si(来自皮膜的元素)的以X射线检测强度的最大值为基准的分布,图2表示本发明例1的SEM像、和按照上述方法分成2个区域时的Si(来自皮膜的元素)的分布。此外,图中SL为SEM像,Si表示Si的分布,Al表示Al的分布。图1、2的SEM像以及Al、Si的分布图为同一部位且以1∶1对应,因此能够分别叠加。
如图1所示,可知:本发明例1中,Al和Si为互补关系,基材表面和皮膜表面混杂存在。此外,如图2所示,Si的分布中X射线检测强度的最大值为240,以其0.20倍即48为阈值分成2部分时,X射线检测强度大于等于阈值的区域中的面积率(皮膜的面积率)为16.0%。
图3表示本发明例3的SEM像以及Al(来自基材的元素)和Si(来自皮膜的元素)的以X射线检测强度的最大值为基准的分布,图4表示本发明例3的SEM像、和按照上述方法分成2个区域时的Si(来自皮膜的元素)的分布。此外,图中SL为SEM像,S i表示Si的分布,Al表示Al的分布。图3、4的SEM像以及Al、Si的分布图为同一部位且以1∶1对应,因此能够分别叠加。
如图3所示,可知:本发明例3中,也是Al和Si为互补关系,基材表面和皮膜表面混杂存在。此外,如图4所示,Si的分布中X射线检测强度的最大值为310,以其0.20倍即62为阈值分成2部分时,X射线检测强度大于等于阈值的区域中的面积率(皮膜的面积率)为50.9%。
另一方面,比较例1为基材中使用氧化铝的例子,比较例2为基材中使用已知耐腐蚀性高的氧化钇(Y2O3)的例子,均没有形成皮膜,因此颗粒数多。此外,整面形成皮膜的比较例3中,最初时颗粒数少,但作为半导体制造装置的腔室部件使用2小时时发生剥离,颗粒数急剧增加。比较例4~7均为基材使用了喷涂陶瓷的例子,孔隙率均大,即使形成了皮膜也没有实现颗粒数减少。
实施例2
对于表1所示的本发明例3和比较例1,设置为半导体制造装置等离子体处理槽中使用的防粘板,用颗粒计数器(KLA-Tencor公司制SPI)调查了颗粒的产生数。调查中,对25枚晶圆进行等离子体处理,对第1、第5、第10、第15、第20和第25枚共计6枚晶圆,测定晶圆上存在的1μm以上的颗粒数。其结果示于表2。此外,对本发明例3的陶瓷构件,进行5次通常维护时必须的洗涤,再次安装到实际装置中,通过与上述同样的方法调查了颗粒的产生数。其结果作为本发明例6而一并记载于表2中。
表2
如表2所示,比较例1的陶瓷构件中,所有的晶圆上都附着了多个颗粒,平均为16.8个,本发明例3的陶瓷构件上几乎没有附着颗粒,平均为1.0个。此外,实施了5次洗涤的本发明例6的陶瓷构件上附着也较少,平均为3.3个,能够确认洗涤后也维持了本发明的效果。
产业上的可利用性
根据本发明,能够在发挥陶瓷烧结体原本所具有的功能、即优异的耐腐蚀性的同时,防止烧结时、磨削加工等时产生的、因陶瓷烧结体表面的气孔内等微小空间内残存的微粒或因微细裂纹而产生的颗粒的飞散。因此,本发明的表面处理陶瓷构件适合用于例如在半导体器件制造装置、液晶显示器制造装置、精密分析仪器的加热单元等中暴露于高温气氛、处理气体气氛或等离子体气氛的构件中。
Claims (6)
1.一种表面处理陶瓷构件,其为孔隙率为1%以下的陶瓷烧结体基材的至少部分具有皮膜形成表面的陶瓷构件,
皮膜形成表面是由硅醇盐化合物聚合体的溶胶凝胶皮膜和基材表面混杂存在而成的,
所述溶胶凝胶皮膜的面积率为所述皮膜形成表面整体的5~80%,
在所述皮膜形成表面中,陶瓷烧结体基材表面的凹部被所述溶胶凝胶皮膜选择性覆盖。
2.根据权利要求1所述的表面处理陶瓷构件,其特征在于,其用于真空处理装置或气氛处理装置。
3.根据权利要求2所述的表面处理陶瓷构件,其特征在于,至少在与处理气氛接触的部分形成有所述皮膜形成表面。
4.一种表面处理陶瓷构件的制造方法,其特征在于,在孔隙率为1%以下的陶瓷烧结体基材的表面涂布由硅醇盐化合物聚合体的溶胶凝胶构成的皮膜材料,然后在满足固化前的皮膜材料残存于陶瓷烧结体表面的凹部的条件下除去部分皮膜材料,并使残存于陶瓷烧结体表面的凹部的皮膜材料固化。
5.根据权利要求4所述的表面处理陶瓷构件的制造方法,其特征在于,部分皮膜材料的除去是通过擦拭进行的。
6.一种真空处理装置,其使用了权利要求1~3中任意一项所述的表面处理陶瓷构件。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008211292A JP5537001B2 (ja) | 2008-08-20 | 2008-08-20 | 表面処理セラミックス部材、その製造方法および真空処理装置 |
JP2008-211292 | 2008-08-20 | ||
PCT/JP2009/064109 WO2010021260A1 (ja) | 2008-08-20 | 2009-08-10 | 表面処理セラミックス部材、その製造方法および真空処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102123970A CN102123970A (zh) | 2011-07-13 |
CN102123970B true CN102123970B (zh) | 2014-01-29 |
Family
ID=41707138
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980132385.4A Active CN102123970B (zh) | 2008-08-20 | 2009-08-10 | 表面处理陶瓷构件、其制造方法及真空处理装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8231967B2 (zh) |
JP (1) | JP5537001B2 (zh) |
KR (1) | KR101276506B1 (zh) |
CN (1) | CN102123970B (zh) |
TW (1) | TWI400217B (zh) |
WO (1) | WO2010021260A1 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9034199B2 (en) | 2012-02-21 | 2015-05-19 | Applied Materials, Inc. | Ceramic article with reduced surface defect density and process for producing a ceramic article |
US9212099B2 (en) | 2012-02-22 | 2015-12-15 | Applied Materials, Inc. | Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics |
US9090046B2 (en) | 2012-04-16 | 2015-07-28 | Applied Materials, Inc. | Ceramic coated article and process for applying ceramic coating |
US9604249B2 (en) | 2012-07-26 | 2017-03-28 | Applied Materials, Inc. | Innovative top-coat approach for advanced device on-wafer particle performance |
US9343289B2 (en) | 2012-07-27 | 2016-05-17 | Applied Materials, Inc. | Chemistry compatible coating material for advanced device on-wafer particle performance |
DE102013104186A1 (de) * | 2013-04-25 | 2014-10-30 | Coatec Gmbh | Lagerring, elektrisch isolierende Beschichtung und Verfahren zum Aufbringen einer elektrisch isolierenden Beschichtung |
US9865434B2 (en) | 2013-06-05 | 2018-01-09 | Applied Materials, Inc. | Rare-earth oxide based erosion resistant coatings for semiconductor application |
US9850568B2 (en) | 2013-06-20 | 2017-12-26 | Applied Materials, Inc. | Plasma erosion resistant rare-earth oxide based thin film coatings |
US11047035B2 (en) | 2018-02-23 | 2021-06-29 | Applied Materials, Inc. | Protective yttria coating for semiconductor equipment parts |
CN108937607B (zh) * | 2018-09-18 | 2021-02-05 | 杭州蜗牛实业有限公司 | 一种表面防粘炊具的制作方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100367457C (zh) * | 2002-10-31 | 2008-02-06 | 东曹株式会社 | 岛状突起修饰部件及其制造方法和采用它的装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60169139A (ja) * | 1984-02-13 | 1985-09-02 | Canon Inc | 気相法装置 |
JPH06737A (ja) * | 1991-03-29 | 1994-01-11 | Shin Etsu Chem Co Ltd | 静電チャック基板 |
JP3126635B2 (ja) | 1994-07-11 | 2001-01-22 | 東洋鋼鈑株式会社 | アルミナセラミックス焼結体 |
JPH1121187A (ja) | 1997-07-02 | 1999-01-26 | Ngk Insulators Ltd | セラミックス製品の洗浄方法 |
WO1999039890A1 (fr) * | 1998-02-05 | 1999-08-12 | Nippon Sheet Glass Co., Ltd. | Article a surface rugueuse, procede de production dudit article et composition a cet effet |
JPH11312729A (ja) * | 1998-04-28 | 1999-11-09 | Kyocera Corp | 静電チャック |
JP2001152307A (ja) | 1999-11-29 | 2001-06-05 | Nippon Steel Hardfacing Co Ltd | 耐食性を有し、長期間使用に耐える複合皮膜の形成方法およびその複合皮膜を有する部材 |
JP3716386B2 (ja) * | 2000-07-24 | 2005-11-16 | 東芝セラミックス株式会社 | 耐プラズマ性アルミナセラミックスおよびその製造方法 |
JP2002180233A (ja) | 2000-12-14 | 2002-06-26 | Ntn Corp | 封孔処理セラミックス絶縁層および軌道輪 |
JP2003119087A (ja) | 2001-10-17 | 2003-04-23 | Ngk Insulators Ltd | 複合コーティング材料、積層体、耐蝕性部材、耐ハロゲンガスプラズマ用部材および複合コーティング材料の製造方法 |
JP2003335589A (ja) | 2002-05-20 | 2003-11-25 | Nihon Ceratec Co Ltd | 耐食性複合部材およびその製造方法 |
-
2008
- 2008-08-20 JP JP2008211292A patent/JP5537001B2/ja active Active
-
2009
- 2009-08-10 WO PCT/JP2009/064109 patent/WO2010021260A1/ja active Application Filing
- 2009-08-10 KR KR1020117003716A patent/KR101276506B1/ko active IP Right Grant
- 2009-08-10 CN CN200980132385.4A patent/CN102123970B/zh active Active
- 2009-08-19 TW TW98127987A patent/TWI400217B/zh active
-
2011
- 2011-02-14 US US13/026,356 patent/US8231967B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100367457C (zh) * | 2002-10-31 | 2008-02-06 | 东曹株式会社 | 岛状突起修饰部件及其制造方法和采用它的装置 |
Non-Patent Citations (2)
Title |
---|
JP特开2002-37660A 2002.02.06 |
JP特开平11-312729A 1999.11.09 |
Also Published As
Publication number | Publication date |
---|---|
KR20110033860A (ko) | 2011-03-31 |
US20110151237A1 (en) | 2011-06-23 |
US8231967B2 (en) | 2012-07-31 |
TW201016631A (en) | 2010-05-01 |
TWI400217B (zh) | 2013-07-01 |
JP5537001B2 (ja) | 2014-07-02 |
KR101276506B1 (ko) | 2013-06-18 |
WO2010021260A1 (ja) | 2010-02-25 |
JP2010047434A (ja) | 2010-03-04 |
CN102123970A (zh) | 2011-07-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102123970B (zh) | 表面处理陶瓷构件、其制造方法及真空处理装置 | |
JP4988597B2 (ja) | 酸溶液によるシリコン電極アセンブリ表面の汚染除去 | |
KR101232939B1 (ko) | 실리콘 전극 어셈블리 표면 오염물 제거를 위한 세정 방법 | |
JP5059620B2 (ja) | シリコン電極アセンブリのエッチング速度及びエッチング均一性を回復する方法 | |
KR102271200B1 (ko) | 전기-도금 접착력을 위한 양극산화 아키텍쳐 | |
KR100268052B1 (ko) | 정전 척부재 및 그 제조방법 | |
KR20170023780A (ko) | 반도체 챔버 구성요소를 위한 방사율 제어된 코팅 | |
JP5510411B2 (ja) | 静電チャック及び静電チャックの製造方法 | |
KR100940812B1 (ko) | 반도체 제조 장비용 열용사 코팅막의 제조방법 | |
US8221552B2 (en) | Cleaning of bonded silicon electrodes | |
JP2008514816A (ja) | 溶射法を用いた気密結晶性ムライト層の製造法 | |
US20050161061A1 (en) | Methods for cleaning a set of structures comprising yttrium oxide in a plasma processing system | |
WO2016003196A1 (ko) | 다양한 기판 상에 직접 성장된 산화세륨 초발수 나노/마이크로 구조체 및 이의 제조방법 | |
JP4981294B2 (ja) | 溶射皮膜 | |
EP3178964A1 (en) | Cvd apparatus | |
JP5462652B2 (ja) | 表面処理セラミックス部材およびその製造方法 | |
CN218025871U (zh) | 石墨组件 | |
JP4981293B2 (ja) | 溶射皮膜 | |
JP2010047433A (ja) | 表面処理セラミックス部材およびその製造方法 | |
JPH01220462A (ja) | 表面改質された窒化アルミニウム基板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |