TWI397944B - 半導體薄膜及其製造方法 - Google Patents
半導體薄膜及其製造方法 Download PDFInfo
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- TWI397944B TWI397944B TW095135844A TW95135844A TWI397944B TW I397944 B TWI397944 B TW I397944B TW 095135844 A TW095135844 A TW 095135844A TW 95135844 A TW95135844 A TW 95135844A TW I397944 B TWI397944 B TW I397944B
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- 239000004065 semiconductor Substances 0.000 title claims description 65
- 239000010409 thin film Substances 0.000 title claims description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000010408 film Substances 0.000 claims description 122
- 230000015572 biosynthetic process Effects 0.000 claims description 26
- 229910003437 indium oxide Inorganic materials 0.000 claims description 24
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 23
- 239000001301 oxygen Substances 0.000 claims description 23
- 229910052760 oxygen Inorganic materials 0.000 claims description 23
- 239000013078 crystal Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 4
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims description 4
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 4
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052614 beryl Inorganic materials 0.000 claims description 3
- 239000002178 crystalline material Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 description 35
- 229910000420 cerium oxide Inorganic materials 0.000 description 13
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 13
- 238000002834 transmittance Methods 0.000 description 12
- 229910052747 lanthanoid Inorganic materials 0.000 description 8
- 150000002602 lanthanoids Chemical class 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 4
- 229910001195 gallium oxide Inorganic materials 0.000 description 4
- 229910000464 lead oxide Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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Description
本發明係關於半導體元件,特別是有關藉由結晶薄膜所形成之半導體元件及該半導體元件應用於顯示裝置等。
近幾年,顯示裝置有驚人之發展,液晶顯示裝置或EL(電激發光)顯示裝置等各種顯示裝置被積極導入個人電腦等之OA(辦公室自動化)設備、薄型電視顯像器等。此等顯示裝置均具有以透明導電膜將顯示元件包挾之三明治式基本構造。
其次,從小型化等之觀點來看,則廣泛使用採用薄膜之元件,以作為驅動此等顯示裝置之開關元件。
此薄膜由於對開關元件之性能、製造步驟具有很大的影響,因此從過去以來即進行對其組成或製造方法等各種之技術檢討。
現在,驅動顯示裝置之開關元件,主流係使用矽系半導體膜的元件。此乃因矽系薄膜除良好之穩定性、加工性外,尚具有開關速度快等各種良好之性能。此矽系薄膜一般係藉由化學氣相沈積法(CVD)所製造。
又,已有提出比矽系薄膜穩定性更優異之透明半導體薄膜。此種半導體薄膜,係例如記載於下述專利文獻1。
〔專利文獻1〕日本特開2004-119525號公報
然而,當矽系薄膜為非晶質時,其開關速度較慢,於顯示高速動畫時,具有有時無法追隨其移動之困難點。
另一方面,當矽系薄膜為結晶質時,其開關速度雖較快,但是於欲使之結晶時,則須要800℃以上之高溫、或藉由雷射之加熱等,製造上具有消耗大量能源及須要許多步驟的問題。
又,已知以矽系薄膜作為電壓元件雖然性能優異,但是當流過電流時,有時會產生其特性隨著時間變化而造成問題之情形。
近幾年,相較於矽系薄膜,透明半導體薄膜因其優異之穩定性而受到注目(參照上述專利文獻1)。根據此專利文獻1,係記載著:記載於專利文獻1之透明半導體薄膜為具有與ITO膜同等之光透過率。
又,專利文獻1中,作為用來獲得此透明半導體薄膜之合適材料的靶,係有由氧化銦及氧化鎵所構成的濺射靶、由氧化亞鉛所構成的濺射靶、以及氧化亞鉛及氧化鎂所構成的靶等之各種靶。又,專利文獻1中,亦記載著使用此等濺射靶來製造半導體薄膜之方法。
然而,此等由.氧化銦及氧化鎵.氧化亞鉛.氧化亞鉛及氧化鎂所構成之透明半導體膜,其移動率較高亦只有10cm2
/V.sec左右,相較於非晶矽雖較大,但相較於多晶矽(polysilicon)則為非常小之值。又,有因加熱等導致移動率產生變化而引起半導體之動作不良、或因光線射入於半導體層時而造成誤動作之情形。
本發明有鑒於此種情形,其目的在於以氧化銦為主成分,且添加氧化鈰之氧化物,藉此提供不會因光線而造成誤動作之透明氧化物半導體及其製造方法。
本發明之其他目的在於提供不會因加熱等而導致薄膜之電阻係數產生變化,且穩定之透明氧化物半導體及其製造方法。
又,本發明之其他目的在於提供薄膜之移動率較高之透明氧化物半導體及其製造方法。
(1)為了解決上述課題,本發明之半導體薄膜其特徵為:含有氧化銦及氧化鈰,係由結晶質所構成之半導體薄膜,其電阻係數為10+ 1
~10+ 8
Ω cm。
此處,上述半導體薄膜之電阻係數若未滿10+ 1
Ω cm時,有可能因太過於提升導電性而無法發揮半導體之性能,反而變成漏電流大之元件。
又,在電阻係數超過10+ 8
Ω cm時,則會因絕緣性過強而有無法呈現半導體動作之顧慮。
上述半導體薄膜之電阻係數較佳的值為10+ 1
~10+ 7
Ω cm。更佳之電阻係數為10+ 2
~10+ 6
Ω cm。
(2)又,本發明係(1)所記載之半導體薄膜,其中,上述半導體薄膜中之原子比(各原子之數目比)為Ce/(Ce+In)=0.005~0.1。此外,Ce/(Ce+In)之式子係各原子之數目比,亦即用來表示鈰原子對整體組成之原子比的式子。此式中之Ce表示鈰原子之數目,In表示銦原子之數目。
(3)又,本發明係(1)或(2)所記載之半導體薄膜,其中,上述半導體薄膜中之鈰原子比為Ce/(Ce+In)=0.01~0.05。
此處,上述半導體薄膜中之原子比在未滿Ce/(Ce+In)=0.005時,則難以將上述半導體薄膜之電阻係數穩定地控制在上述範圍。又,上述半導體薄膜中之原子比在超過Ce/(Ce+In)=0.1時,則難以將上述半導體薄膜之電阻係數穩定地控制在上述範圍,且有移動率降低之情形。
此外,上述半導體薄膜中之鈰原子比更佳之數值範圍為Ce/(Ce+In)=0.01~0.05。
此外,於本發明之薄膜添加第三成分亦較佳。此處,第三成分係指在銦、鈰之後的第三種成分。
作為第三成分,正三價之金屬氧化物較佳。正三價之金屬氧化物的代表例有Al(鋁)、Ga(鎵)、Y(釔)之氧化物。又,亦合適選擇Nd(釹)、Sm(釤)等之正三價類鑭元素等。
作為第三成分之正三價之金屬氧化物的添加量,雖然只要不會影響到性能之量均無問題,但較佳係第三成分之原子比,亦即「第三成分/(Ce+In+第三成分)」之式的值為從0.01到0.1之範圍。更佳係此原子比為0.01到0.05。
此第三成分之原子比在超過0.1時,有薄膜不會結晶,或加熱時電阻係數不穩定等之情形。
(4)又,本發明係(1)至(3)所記載之半導體薄膜,其中,上述半導體薄膜為氧化銦之紅綠柱石型結晶。
半導體薄膜,即使是非晶質亦會呈現半導體之動作,但由於移動率較小因此有開關速度較慢之可能性。如此,半導體薄膜以結晶質較佳。此時,此結晶質以紅綠柱石型構造較佳。
又,此時可以X射線繞射藉由結晶峰值之(222)峰值、(400)峰值之有無,來判定到底是結晶質或非晶質。
(5)又,本發明係(1)至(4)中任一項所記載之半導體薄膜之製造方法,其中,於使用含有氧化銦及氧化鈰之靶,以藉由物理成膜法來製造薄膜之方法中,以成膜中的氧氣濃度為超過5vol.%之環境中來成膜。
此處,於氧氣濃度為超過5vol.%之濃度下來成膜較佳。氧氣濃度低於5vol.%時,有造成所獲得之半導體薄膜的導電性提升過度,而導致無法呈現半導體動作之情形。
(6)又,本發明係上述(5)所記載之半導體薄膜之製造方法,其中,上述成膜中之環境中的氧氣濃度為10vol.%~30vol.%之範圍內。
(7)又,本發明係(5)或(6)所記載之半導體薄膜之製造方法,其中,上述成膜中之環境中的氧氣濃度為10vol.%~20vol.%之範圍內。
此處,於氧氣濃度超過30vol.%時,有造成濺射時之電漿不穩定或引起異常放電之情形。更佳之氧氣濃度數值範圍為10vol.%~20vol.%。
藉由設定此種數值範圍,可控制氧氣濃度之值,以將氧化物半導體中之載體密度調整至未滿10+ 1 8
/cm3
。又,移動率即會超過10cm2
/V.sec,對半導體薄膜而言非常合適。若上述氧化物半導體中之載體密度調整至未滿10+ 1 7
/cm3
、當移動率超過10cm2
/V.sec則更佳。
此外,較佳之結晶方法,係於氧氣存在條件下,藉由加熱或照射燈炮光線、雷射光線等來給予能量。
(8)又,本發明係(1)至(4)中任一項所記載之半導體薄膜之製造方法,其中,於使用含有氧化銦及氧化鈰之靶,以藉由物理成膜法來製造薄膜之方法,使成膜中之基板溫度為在150℃以上之溫度來成膜。
(9)又,進一步本發明係(1)至(4)中任一項所記載之半導體薄膜之製造方法,其中,於使用含有氧化銦及氧化鈰之靶,以藉由物理成膜法來製造薄膜之方法,使成膜後之基板以200℃以上之溫度來加熱。
如以上所說明,以本發明所得到之透明氧化物半導體,可維持在熱穩定性優異之半導體區域的電阻係數,且可獲得高透明、高移動率之透明氧化物半導體。
又,根據本發明,藉由控制薄膜製造時之氧氣濃度,可容易地獲得上述透明氧化物半導體。
以下,根據圖面來說明本發明之最佳實施形態。
首先,作成靶樣品1。
將氧化銦與氧化鈰之粉末(平均粒子徑1 μ m以下),使Ce/(Ce+In)之莫耳比為0.01,並收容於濕式球磨機容器內,持續72小時予以混合碾碎。
接著,將以此方式所得到之粉碎物經由造粒,加壓成形為直徑4英吋、厚度5mm之尺寸。將此收容於燒成爐後,以1400℃之溫度、36小時加熱燒成,以作成靶。
此外,Ce/(Ce+In)為原子數比,此值在本發明實施形態中係等於上述莫耳比。
以同樣手法,將氧化銦與氧化鈰之組成改變,以作成靶樣品2~靶樣品8。
如圖1所示,樣品1係氧化銦與氧化鈰之莫耳比為0.01之靶。
又,樣品2係氧化銦與氧化鈰之莫耳比為0.03之靶。
又,樣品3係氧化銦與氧化鈰之莫耳比為0.05之靶。
又,樣品4係氧化銦與氧化鈰之莫耳比為0.1之靶。
又,樣品5中氧化銦與氧化鈰之莫耳比雖為0.02,但進一步添加有氧化釤作為第三成分。此氧化釤之添加量若以Sm/(In+Ce+Sm)所表示之莫耳比則為0.01。
又,樣品6中氧化銦與氧化鈰之莫耳比雖為0.02,但進一步添加有氧化鎵作為第三成分。此氧化鎵之添加量若以Ga/(In+Ce+Ga)所表示之莫耳比則為0.01。
又,樣品7係氧化銦與氧化鈰之莫耳比為0之靶。亦即,全部為氧化銦。
又,樣品8係氧化銦與氧化鈰之莫耳比為0.5之靶。
以上,作成靶樣品1~靶樣品8合計八種。
其次,將上述(1)所得到之靶裝著於濺射裝置。接著,一旦將真空度抽至10- 4
Pa之真空後,即導入氬氣與氧氣以調整至0.3Pa。其次,藉由RF磁控管濺射法,施加100W功率,於試料上以製造200nm之薄膜。將該薄膜之製造條件、及薄膜之測定值表示於圖2之表。又,有關結晶有無的測定方法,係藉由X射線繞射法來進行。
首先,進行實施例之說明。
如圖2所示,實施例1係使用樣品1之靶所製成的薄膜。氧氣分壓為10%,以200℃之成膜溫度來成膜。其結果,可得到電阻係數為10+ 2
Ω cm之薄膜。此薄膜對波長550nm之光線的透過率為85%,且已結晶。經300℃ 1小時加熱後,電阻係數為10+ 2
Ω cm,與加熱前比較無變化。又,與加熱前同樣雖仍為結晶狀態,但結晶峰值則變得更為尖銳,結晶更為提升。
如圖2所示,實施例2係使用樣品2之靶所製成的薄膜。氧氣分壓為10%,以200℃之成膜溫度來成膜。其結果,可得到電阻係數為10+ 2
Ω cm之薄膜。此薄膜對波長550nm之光線的透過率為85%,且已結晶。經300℃ 1小時加熱後,電阻係數為10+ 2
Ω cm,與加熱前比較無變化。又,與加熱前同樣雖仍為結晶狀態,但結晶峰值則變得更為尖銳,結晶更為提升。
如圖2所示,實施例3係使用樣品3之靶所製成的薄膜。氧氣分壓為10%,以200℃之成膜溫度來成膜。其結果,可得到電阻係數為10+ 4
Ω cm之薄膜。又,此薄膜對波長550nm之光線的透過率為85%,且已結晶。經300℃ 1小時加熱後,電阻係數為10+ 4
Ω cm,與加熱前比較無變化。又,與加熱前同樣雖仍為結晶狀態,但結晶峰值則變得更為尖銳,結晶更為提升。
如圖2所示,實施例4係使用樣品4之靶所製成的薄膜。氧氣分壓為10%,以200℃之成膜溫度來成膜。其結果,可得到電阻係數為10+ 5
Ω cm之薄膜。又,此薄膜對波長550nm之光線的透過率為85%,且已結晶。經300℃ 1小時加熱後,電阻係數為10+ 5
Ω cm,與加熱前比較無變化。又,與加熱前同樣雖仍為結晶狀態,但結晶峰值則變得更為尖銳,結晶更為提升。
如圖2所示,實施例5係使用樣品5之靶所製成的薄膜。氧氣分壓為10%,以200℃之成膜溫度來成膜。其結果,可得到電阻係數為10+ 6
Ω cm之薄膜。又,此薄膜對波長550nm之光線的透過率為86%,且已結晶。經300℃ 1小時加熱後,電阻係數為10+ 6
Ω cm,與加熱前比較無變化。又,與加熱前同樣雖仍為結晶狀態,但結晶峰值則變得更為尖銳,結晶更為提升。
如圖2所示,實施例6係使用樣品6之靶所製成的薄膜。氧氣分壓為10%,以200℃之成膜溫度來成膜。其結果,可得到電阻係數為10+ 2
Ω cm之薄膜。又,此薄膜對波長550nm之光線的透過率為87%,且已結晶。經300℃ 1小時加熱後,電阻係數為10+ 2
Ω cm,與加熱前比較無變化。又,與加熱前同樣雖仍為結晶狀態,但結晶峰值則變得更為尖銳,結晶更為提升。
如圖2所示,實施例7係使用樣品2之靶所製成的薄膜。氧氣分壓為20%,以200℃之成膜溫度來成膜。其結果,可得到電阻係數為10+ 2
Ω cm之薄膜。又,此薄膜對波長550nm之光線的透過率為85%,且已結晶。經300℃ 1小時加熱後,電阻係數為10+ 2
Ω cm,與加熱前比較無變化。又,與加熱前同樣雖仍為結晶狀態,但結晶峰值則變得更為尖銳,結晶更為提升。
又,如圖2所示,此等實施例藉由電洞測定所求出之載體密度皆為未滿10+ 1 8
/cm3
,且移動率超過10cm2
/V.sec。
其次,進行比較例之說明。
如圖2所示,比較例1係使用樣品2之靶所製成的薄膜。氧氣分壓為3%,以200℃之成膜溫度來成膜。其結果,可得到電阻係數為10- 2
Ω cm之薄膜。又,此薄膜對波長550nm之光線的透過率為85%,且已結晶。經300℃ 1小時加熱後,電阻係數為10- 2
Ω cm,與加熱前比較無變化。又,與加熱前同樣為結晶狀態。
如圖2所示,比較例2係使用樣品2之靶所製成的薄膜。氧氣分壓為0%,以室溫之成膜溫度來成膜。其結果,可得到電阻係數為10- 3
Ω cm之薄膜。又,此薄膜對波長550nm之光線的透過率為85%,又,尚未結晶。經300℃ 1小時加熱後,電阻係數為10- 2
Ω cm,與加熱前比較已有變化。又,尚未結晶之薄膜經1小時加熱後,即改變成結晶狀態。
如圖2所示,比較例3係使用樣品7之靶所製成的薄膜。氧氣分壓為0%,以室溫之成膜溫度來成膜。其結果,可得到電阻係數為10- 3
Ω cm之薄膜。又,此薄膜對波長550nm之光線的透過率為85%,又,尚未結晶。經300℃ 1小時加熱後,電阻係數為10- 1
Ω cm,與加熱前比較已有變化。又,尚未結晶之薄膜經1小時加熱後,即改變成結晶狀態。
如圖2所示,比較例4係使用樣品8之靶所製成的薄膜。氧氣分壓為0%,以室溫之成膜溫度來成膜。其結果,可得到電阻係數為10- 4
Ω cm之薄膜。又,此薄膜對波長550nm之光線的透過率為85%,又,尚未結晶。經300℃ 1小時加熱後,電阻係數為10- 2
Ω cm,又,藉由X射線繞射,已確認未結晶之薄膜已改變成結晶之狀態。
又,如圖2所示,此等比較例之移動率雖均超過10cm2
/V.sec,但藉由電洞測定所求出之載體密度皆為10+ 1 8
/cm3
。
〔圖1〕係表示以本實施形態所作成之靶的組成表。
〔圖2〕係表示使用以本實施形態所作成之靶來成膜之薄膜之測定值等的表。
Claims (7)
- 一種半導體薄膜,係含有氧化銦及氧化鈰,為由結晶質所構成之半導體薄膜,其特徵為:電阻係數為10+1 ~10+8 Ω cm;上述半導體薄膜中之鈰原子比為:Ce/(Ce+In)=0.005~0.1;上述半導體薄膜為氧化銦之紅綠柱石型結晶。
- 如申請專利範圍第1項所記載之半導體薄膜,其中,上述半導體薄膜中之鈰原子比為:Ce/(Ce+In)=0.01~0.05。
- 一種半導體薄膜的製造方法,其特徵為:使用含有氧化銦及氧化鈰之靶,以藉由物理成膜法來製造薄膜之方法,上述靶中之鈰原子比為:Ce/(Ce+In)=0.005~0.1;且以成膜中之環境中的氧氣濃度為超過5vol.%來成膜。
- 如申請專利範圍第3項所記載之半導體薄膜的製造方法,其中,於上述成膜中之環境中的氧氣濃度為10vol.%~30vol.%之範圍內來成膜。
- 如申請專利範圍第3或第4項所記載之半導體薄膜的製造方法,其中,於上述成膜中之環境中的氧氣濃度為10vol.%~20vol.%之範圍內來成膜。
- 一種半導體薄膜的製造方法,其特徵為:使用含有氧化銦及氧化鈰之靶,以藉由物理成膜法來製造薄膜之方法,上述靶中之鈰原子比為:Ce/(Ce+In)=0.005~0.1;使成膜中之基板溫度於150℃以上之溫度來成膜。
- 一種半導體薄膜的製造方法,其特徵為:使用含有氧化銦及氧化鈰之靶,以藉由物理成膜法來製造薄膜之方法,上述靶中之鈰原子比為:Ce/(Ce+In)=0.005~0.1;將成膜後之基板以200℃以上之溫度來加熱。
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JP2005304369A JP4805648B2 (ja) | 2005-10-19 | 2005-10-19 | 半導体薄膜及びその製造方法 |
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US (1) | US8062777B2 (zh) |
EP (1) | EP1939319A4 (zh) |
JP (1) | JP4805648B2 (zh) |
KR (1) | KR101347966B1 (zh) |
CN (1) | CN101233257B (zh) |
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WO (1) | WO2007046181A1 (zh) |
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JP4805648B2 (ja) | 2005-10-19 | 2011-11-02 | 出光興産株式会社 | 半導体薄膜及びその製造方法 |
JP2009231549A (ja) | 2008-03-24 | 2009-10-08 | Toyoda Gosei Co Ltd | 窒化物系半導体発光素子 |
US9269573B2 (en) * | 2008-09-17 | 2016-02-23 | Idemitsu Kosan Co., Ltd. | Thin film transistor having crystalline indium oxide semiconductor film |
JP5895144B2 (ja) * | 2009-09-17 | 2016-03-30 | パナソニックIpマネジメント株式会社 | 透明導電膜及びこれを備えた装置 |
JP5437825B2 (ja) * | 2010-01-15 | 2014-03-12 | 出光興産株式会社 | In−Ga−O系酸化物焼結体、ターゲット、酸化物半導体薄膜及びこれらの製造方法 |
US9493869B2 (en) * | 2010-03-19 | 2016-11-15 | Sumitomo Metal Mining Co., Ltd. | Transparent conductive film |
US9145348B2 (en) * | 2011-10-31 | 2015-09-29 | Merck Sharpe & Dohme Corp. | Process for synthesizing a CETP inhibitor |
JP6134379B2 (ja) * | 2012-04-24 | 2017-05-24 | フォルシュングスフェアブント・ベルリン・アインゲトラーゲナー・フェライン | インジウム酸化物(In2O3)単結晶を成長させる方法及び装置並びにインジウム酸化物(In2O3) |
JP5971201B2 (ja) * | 2013-06-17 | 2016-08-17 | 住友金属鉱山株式会社 | In−Ce−O系スパッタリングターゲットとその製造方法 |
US20150329371A1 (en) * | 2014-05-13 | 2015-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Oxide, semiconductor device, module, and electronic device |
WO2018225114A1 (ja) * | 2017-06-05 | 2018-12-13 | 凸版印刷株式会社 | 半導体装置、表示装置、及びスパッタリングターゲット |
CN114059025A (zh) * | 2020-07-31 | 2022-02-18 | 广州市尤特新材料有限公司 | 氧化铟靶材和氧化铟靶材制备方法 |
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2005
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- 2006-08-07 EP EP06782427A patent/EP1939319A4/en not_active Withdrawn
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- 2006-08-07 KR KR1020087009320A patent/KR101347966B1/ko not_active IP Right Cessation
- 2006-08-07 WO PCT/JP2006/315585 patent/WO2007046181A1/ja active Application Filing
- 2006-08-07 US US12/090,731 patent/US8062777B2/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
TW200717598A (en) | 2007-05-01 |
EP1939319A4 (en) | 2009-10-21 |
KR101347966B1 (ko) | 2014-01-07 |
WO2007046181A1 (ja) | 2007-04-26 |
US8062777B2 (en) | 2011-11-22 |
CN101233257B (zh) | 2010-09-22 |
EP1939319A1 (en) | 2008-07-02 |
JP2007113048A (ja) | 2007-05-10 |
JP4805648B2 (ja) | 2011-11-02 |
KR20080057297A (ko) | 2008-06-24 |
CN101233257A (zh) | 2008-07-30 |
US20090127548A1 (en) | 2009-05-21 |
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