TWI392024B - 將溼蝕刻之底切最小化以及提供超低介電常數（ｋ＜２.５）之介電質封孔之方法 - Google Patents

將溼蝕刻之底切最小化以及提供超低介電常數（ｋ＜２.５）之介電質封孔之方法 Download PDF

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Publication number
TWI392024B
TWI392024B TW096140628A TW96140628A TWI392024B TW I392024 B TWI392024 B TW I392024B TW 096140628 A TW096140628 A TW 096140628A TW 96140628 A TW96140628 A TW 96140628A TW I392024 B TWI392024 B TW I392024B
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TW
Taiwan
Prior art keywords
layer
oxygen
nitrogen
rich
film
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TW096140628A
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English (en)
Chinese (zh)
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TW200826196A (en
Inventor
許惠雯
石美儀
夏立群
阿巴雅提亞彌爾
惠蒂德瑞克Ｒ.
姆薩德希肯
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應用材料股份有限公司
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Priority claimed from US11/694,856 external-priority patent/US20070287301A1/en
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW200826196A publication Critical patent/TW200826196A/zh
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Publication of TWI392024B publication Critical patent/TWI392024B/zh

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    • H10W20/076—
    • H10P14/6336—
    • H10P50/283—
    • H10P70/15—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
TW096140628A 2006-11-21 2007-10-29 將溼蝕刻之底切最小化以及提供超低介電常數（ｋ＜２.５）之介電質封孔之方法 TWI392024B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US86677006P 2006-11-21 2006-11-21
US11/694,856 US20070287301A1 (en) 2006-03-31 2007-03-30 Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics

Publications (2)

Publication Number Publication Date
TW200826196A TW200826196A (en) 2008-06-16
TWI392024B true TWI392024B (zh) 2013-04-01

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TW096140628A TWI392024B (zh) 2006-11-21 2007-10-29 將溼蝕刻之底切最小化以及提供超低介電常數（ｋ＜２.５）之介電質封孔之方法

Country Status (4)

Country Link
JP (1) JP5174435B2 (enExample)
KR (1) KR100939593B1 (enExample)
CN (1) CN100550318C (enExample)
TW (1) TWI392024B (enExample)

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* Cited by examiner, † Cited by third party
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US8236684B2 (en) * 2008-06-27 2012-08-07 Applied Materials, Inc. Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layer
CN101740332B (zh) * 2008-11-13 2012-04-25 中芯国际集成电路制造(北京)有限公司 一种半导体元件的蚀刻方法
US20120122320A1 (en) * 2010-11-17 2012-05-17 Applied Materials, Inc. Method Of Processing Low K Dielectric Films
US9034770B2 (en) * 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
CN103839871B (zh) * 2012-11-21 2017-09-08 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
CN105448705B (zh) * 2014-06-18 2018-05-04 无锡华润上华科技有限公司 一种消除晶圆氧化膜上微粒的方法及其氧化膜
CN105244257B (zh) * 2014-07-08 2020-06-23 中芯国际集成电路制造(上海)有限公司 改善多孔低k薄膜的突起缺陷的方法
CN105702619A (zh) * 2014-11-27 2016-06-22 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
CN111863610A (zh) * 2020-05-12 2020-10-30 中国电子科技集团公司第十一研究所 一种制备电极孔的方法及计算机可读存储介质
CN113667976A (zh) * 2021-08-27 2021-11-19 中国科学院兰州化学物理研究所 一种具有封孔顶层的耐蚀dlc薄膜及其制备方法

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US6383907B1 (en) * 1999-09-08 2002-05-07 Sony Corporation Process for fabricating a semiconductor device
US20040069410A1 (en) * 2002-05-08 2004-04-15 Farhad Moghadam Cluster tool for E-beam treated films
US20040072436A1 (en) * 2002-10-09 2004-04-15 Ramachandrarao Vijayakumar S. Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials
US20040214446A1 (en) * 2002-07-11 2004-10-28 Applied Materials, Inc. Nitrogen-free dielectric anti-reflective coating and hardmask

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TW535253B (en) * 2000-09-08 2003-06-01 Applied Materials Inc Plasma treatment of silicon carbide films
US6890850B2 (en) * 2001-12-14 2005-05-10 Applied Materials, Inc. Method of depositing dielectric materials in damascene applications
KR100909175B1 (ko) * 2002-12-27 2009-07-22 매그나칩 반도체 유한회사 듀얼 다마신 패턴 형성 방법
KR100573484B1 (ko) * 2003-06-30 2006-04-24 에스티마이크로일렉트로닉스 엔.브이. 반도체 소자 및 그 제조 방법
KR20050014231A (ko) * 2003-07-30 2005-02-07 매그나칩 반도체 유한회사 반도체소자의 형성방법
JP2005050954A (ja) * 2003-07-31 2005-02-24 Toshiba Corp 半導体装置およびその製造方法
US20050037153A1 (en) * 2003-08-14 2005-02-17 Applied Materials, Inc. Stress reduction of sioc low k films
JP4015976B2 (ja) * 2003-08-28 2007-11-28 株式会社東芝 電子装置の製造方法
JP2005203568A (ja) * 2004-01-15 2005-07-28 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法及び半導体装置
JP2006332408A (ja) * 2005-05-27 2006-12-07 Sony Corp 半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6383907B1 (en) * 1999-09-08 2002-05-07 Sony Corporation Process for fabricating a semiconductor device
US20040069410A1 (en) * 2002-05-08 2004-04-15 Farhad Moghadam Cluster tool for E-beam treated films
US20040214446A1 (en) * 2002-07-11 2004-10-28 Applied Materials, Inc. Nitrogen-free dielectric anti-reflective coating and hardmask
US20040072436A1 (en) * 2002-10-09 2004-04-15 Ramachandrarao Vijayakumar S. Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials

Also Published As

Publication number Publication date
TW200826196A (en) 2008-06-16
KR20080046087A (ko) 2008-05-26
JP2008147644A (ja) 2008-06-26
JP5174435B2 (ja) 2013-04-03
KR100939593B1 (ko) 2010-02-01
CN100550318C (zh) 2009-10-14
CN101202227A (zh) 2008-06-18

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