JP2008147644A - ウェットエッチングアンダカットを最小にし且つ超低k(k<2.5)誘電体をポアシーリングする方法 - Google Patents
ウェットエッチングアンダカットを最小にし且つ超低k(k<2.5)誘電体をポアシーリングする方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 63
- 238000007789 sealing Methods 0.000 title abstract description 11
- 239000003989 dielectric material Substances 0.000 title 1
- 239000010410 layer Substances 0.000 claims abstract description 166
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 62
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 49
- 239000002243 precursor Substances 0.000 claims abstract description 46
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 45
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 43
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000001301 oxygen Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 26
- 230000008569 process Effects 0.000 claims abstract description 19
- 238000004140 cleaning Methods 0.000 claims abstract description 18
- 230000035515 penetration Effects 0.000 claims abstract description 7
- 239000002344 surface layer Substances 0.000 claims abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 37
- 238000000151 deposition Methods 0.000 claims description 35
- 239000007789 gas Substances 0.000 claims description 22
- 125000000217 alkyl group Chemical group 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 229910052734 helium Inorganic materials 0.000 claims description 10
- 125000004122 cyclic group Chemical group 0.000 claims description 9
- 239000001307 helium Substances 0.000 claims description 9
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 9
- 229920006395 saturated elastomer Polymers 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 239000006117 anti-reflective coating Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 150000003377 silicon compounds Chemical class 0.000 claims 4
- 238000000231 atomic layer deposition Methods 0.000 claims 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical compound [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 17
- 230000005661 hydrophobic surface Effects 0.000 abstract description 5
- 238000010030 laminating Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 98
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 34
- 238000004380 ashing Methods 0.000 description 31
- 230000008021 deposition Effects 0.000 description 17
- 238000009736 wetting Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 150000003961 organosilicon compounds Chemical class 0.000 description 9
- 239000011148 porous material Substances 0.000 description 9
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 7
- 238000009832 plasma treatment Methods 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 239000002052 molecular layer Substances 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- -1 cyclic organosiloxane compound Chemical class 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- NBBQQQJUOYRZCA-UHFFFAOYSA-N diethoxymethylsilane Chemical compound CCOC([SiH3])OCC NBBQQQJUOYRZCA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 2
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 239000003361 porogen Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- KWEKXPWNFQBJAY-UHFFFAOYSA-N (dimethyl-$l^{3}-silanyl)oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)C KWEKXPWNFQBJAY-UHFFFAOYSA-N 0.000 description 1
- JDYIHBJBOWFKFW-UHFFFAOYSA-N 1,2,3,4,5,6,7,8-octamethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetrazatetrasilocane Chemical compound CN1[Si](C)N(C)[Si](C)N(C)[Si](C)N(C)[Si]1C JDYIHBJBOWFKFW-UHFFFAOYSA-N 0.000 description 1
- TXELXUPMAZCYJR-UHFFFAOYSA-N 1,2,3,4,5,6-hexamethyl-1,3,5,7,2,4,6,8-tetrazatetrasilocane Chemical compound CN1[SiH2]N[SiH](C)N(C)[SiH](C)N(C)[SiH]1C TXELXUPMAZCYJR-UHFFFAOYSA-N 0.000 description 1
- PUNGSQUVTIDKNU-UHFFFAOYSA-N 2,4,6,8,10-pentamethyl-1,3,5,7,9,2$l^{3},4$l^{3},6$l^{3},8$l^{3},10$l^{3}-pentaoxapentasilecane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O[Si](C)O1 PUNGSQUVTIDKNU-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- HTDJPCNNEPUOOQ-UHFFFAOYSA-N hexamethylcyclotrisiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O1 HTDJPCNNEPUOOQ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- OFLMWACNYIOTNX-UHFFFAOYSA-N methyl(methylsilyloxy)silane Chemical compound C[SiH2]O[SiH2]C OFLMWACNYIOTNX-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
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Abstract
【解決手段】 一態様において、方法は、シリコンと、炭素とを含み、所望により酸素及び/又は窒素を含んでもよい薄層を膜上に堆積させることによりフォトレジストが膜から除去された後のパターン形成された低誘電率膜を処理するステップを含む。薄層は、パターン形成された低誘電率膜に炭素を多く含む疎水性表面を与える。薄層は、また、続いての湿式洗浄プロセスと、低誘電率膜上に続いて堆積される層の前駆物質による浸透から低誘電率膜を保護する。
【選択図】 図1F
Description
[0001]本発明の実施形態は、一般的には、集積回路の製造に関する。より詳細には、本発明の実施形態は、低誘電率層上にシリコンと、炭素とを含み、所望により酸素及び/又は窒素とを含んでもよい薄層を堆積させる方法に関する。
[0002]集積回路の形状は、このようなデバイスが最初に導入された数十年前からサイズが劇的に減少してきた。その後、集積回路は、一般的に、チップ上のデバイスの数が二年毎に二倍になることを意味する、二年/ハーフサイズのルール(しばしばムーアの法則と呼ばれる)に従ってきた。今日の製造施設は、通常0.13μm、0.1μmもの特徴部サイズを持つデバイスを製造している。将来の施設はまもなく、更に小さい特徴部を持つデバイスを製造するであろう。
ヘキサメチルシクロトリシロキサン (-Si(CH3)2-O-)3- 環状、
1,3,5,7-テトラメチルシクロテトラシロキサン(TMCTS) (-SiH(CH3)-O-)4- 環状、
オクタメチルシクロテトラシロキサン(OMCTS) (-Si(CH3)2-O-)4- 環状、
1,3,5,7,9-ペンタメチルシクロペンタシロキサン (-SiH(CH3)-O-)5- 環状。
1,2,3,4,5,6,7,8-オクタメチルシクロテトラシラザン、
1,2,3,4,5,6-ヘキサメチルシクロテトラシラザン、
1,1,3,3,5,5-ヘキサメチルシクロテトラシラザン、
1,1,3,3,5,5,7,7-オクタメチルシクロテトラシラザン。
Claims (20)
- チャンバ内で基板上の膜を処理する方法であって、
該膜の酸素を多く含む表面又は窒素を多く含む表面上に4オングストローム〜100オングストロームの厚さを有し且つシリコンと炭素とを含み、所望により酸素又は窒素とを含んでもよい薄層を選択的に堆積させることによって該膜を処理するステップであって、該層を堆積させるステップがRF電力の存在下にSiとCとHとを含む前駆物質を反応させる工程を含む、前記方法。 - 該前駆物質が、一般式Rx-Si-(OR’)y(式中、R=H、CH3、CH2CH3、又は他のアルキル基、R’=CH3、CH2CH3、又は他のアルキル基、xは0〜4であり、yは0〜4であり、x+y=4である)を有する前駆物質、構造(RX-Si-O-Si-RY)Z(式中、RX=CH3、CH2CH3、又は他のアルキル基、RY=H、CH3、CH2CH3、又は他のアルキル基)を有する有機ジシロキサン、構造(RX-Si-O)Y(式中、RX=CH3、CH2CH3、又は他のアルキル基)を含む環状有機シロキサン、三つ以上のシリコン原子を有する環構造と所望により一つ以上の酸素原子を含んでもよい環構造を含む環状有機シリコン化合物、及びシリコン原子と酸素原子と、該シリコン原子に結合した一つ又は二つのアルキル基と交互した環を含む環状有機シリコン化合物からなる群より選ばれる、請求項1記載の方法。
- 該前駆物質が、該薄層の成長継続を抑制するために選ばれるメチル基を含む、請求項1記載の方法。
- 該層が該膜の該酸素を多く含む表面又は窒素を多く含む表面より炭素含量が大きく、該層が該膜上に炭素飽和表面層を与える、請求項1記載の方法。
- 該層が堆積された後に該基板を湿式洗浄するステップを更に含む、請求項1記載の方法。
- 該RF電力が約0.109W/cm2以下の電力レベルで印加される、請求項1記載の方法。
- 該チャンバ内の圧力が、約1.5トール以上である、請求項1記載の方法。
- 該チャンバ内のシャワーヘッドと該チャンバ内の基板支持体との間隔が約200ミルを超える、請求項1記載の方法。
- O2、CO2、N2O、NH3、H2、ヘリウム、アルゴン、及び窒素からなる群より選ばれるガスを用いて該層をプラズマ後処理するステップを更に含む、請求項1記載の方法。
- 該層をプラズマ後処理するステップであって、該プラズマ後処理が該層の該表面特性を変化させ、該表面特性が表面張力及び表面接触角からなる群より選ばれる、前記ステップを更に含む、請求項1記載の方法。
- 該層上に底面反射防止コーティング(BARC)を堆積させるステップを更に含む、請求項1記載の方法。
- 約4オングストローム〜約100オングストロームの厚さを有し且つシリコンと炭素とを含み、所望により酸素及び/又は窒素とを含んでもよい原子層堆積又は物理気相堆積によってバリヤ層を堆積させるステップを更に含む、請求項1記載の方法。
- 該薄層が、BARC物質とALD又はPVDバリヤ層前駆物質の該膜への浸透を防止する密度の高い層を与える、請求項1記載の方法。
- 低k誘電体膜がその表面上に堆積した基板を処理する方法であって、
RF電力の存在下に前駆物質を反応させることにより該膜の酸素を多く含む表面又は窒素を多く含む表面上に炭素を多く含む層を選択的に堆積させるステップであって、該前駆物質がシリコン、炭素、酸素、及び窒素からなる群より選ばれる元素を含む、前記ステップを含む、前記方法。 - 該炭素を多く含む層が4オングストローム〜100オングストロームの厚さを有する、請求項14記載の方法。
- 該前駆物質が自己飽和である、請求項14記載の方法。
- 該前駆物質が、一般式Rx-Si-(OR’)y(式中、R=H、CH3、CH2CH3、又は他のアルキル基、R’=CH3、CH2CH3、又は他のアルキル基、xは0〜4であり、yは0〜4であり、x+y=4である)を有する前駆物質、構造(RX-Si-O-Si-RY)Z(式中、RX=CH3、CH2CH3、又は他のアルキル基、RY=H、CH3、CH2CH3、又は他のアルキル基)を有する有機ジシロキサン、構造(RX-Si-O)Y(式中、RX=CH3、CH2CH3、又は他のアルキル基)を含む環状有機シロキサン、三つ以上のシリコン原子を有する環構造と所望により一つ以上の酸素原子を含んでもよい環構造を含む環状有機シリコン化合物、及びシリコン原子と酸素原子と、該シリコン原子に結合した一つ又は二つのアルキル基とを交互にした環を含む環状有機シリコン化合物からなる群より選ばれる、請求項14記載の方法。
- O2、CO2、N2O、NH3、H2、ヘリウム、アルゴン、及び窒素からなる群より選ばれるガスを用いて該炭素を多く含む層をプラズマ後処理するステップを更に含む、請求項14記載の方法。
- チャンバ内で基板上の膜を処理する方法であって、
RF電力の存在下に前駆物質を反応させることにより該基板の酸素を多く含む表面又は窒素を多く含む表面上に4オングストローム〜100オングストロームの厚さを有する炭素を多く含む層を堆積させるステップであって、該前駆物質がシリコン、炭素、酸素、及び窒素からなる群より選ばれる元素を含む、前記ステップを含む、前記方法。 - O2、CO2、N2O、NH3、H2、ヘリウム、アルゴン、及び窒素からなる群より選ばれる化合物から形成されるプラズマに該炭素を多く含む層をさらすステップを更に含む、請求項19記載の方法。
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US11/694,856 US20070287301A1 (en) | 2006-03-31 | 2007-03-30 | Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics |
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CN101740332B (zh) * | 2008-11-13 | 2012-04-25 | 中芯国际集成电路制造(北京)有限公司 | 一种半导体元件的蚀刻方法 |
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CN105244257B (zh) * | 2014-07-08 | 2020-06-23 | 中芯国际集成电路制造(上海)有限公司 | 改善多孔低k薄膜的突起缺陷的方法 |
CN105702619A (zh) * | 2014-11-27 | 2016-06-22 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
CN113667976A (zh) * | 2021-08-27 | 2021-11-19 | 中国科学院兰州化学物理研究所 | 一种具有封孔顶层的耐蚀dlc薄膜及其制备方法 |
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