TWI388639B - 用於低ｋ介電質之障蔽物漿液 - Google Patents

用於低ｋ介電質之障蔽物漿液 Download PDF

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Publication number
TWI388639B
TWI388639B TW098130809A TW98130809A TWI388639B TW I388639 B TWI388639 B TW I388639B TW 098130809 A TW098130809 A TW 098130809A TW 98130809 A TW98130809 A TW 98130809A TW I388639 B TWI388639 B TW I388639B
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TW
Taiwan
Prior art keywords
polishing composition
ppm
salt
acid
polishing
Prior art date
Application number
TW098130809A
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English (en)
Chinese (zh)
Other versions
TW201016807A (en
Inventor
李守田
史帝芬 葛倫拜
傑佛瑞 戴薩
潘卡 辛
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卡博特微電子公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 卡博特微電子公司 filed Critical 卡博特微電子公司
Publication of TW201016807A publication Critical patent/TW201016807A/zh
Application granted granted Critical
Publication of TWI388639B publication Critical patent/TWI388639B/zh

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW098130809A 2008-09-19 2009-09-11 用於低ｋ介電質之障蔽物漿液 TWI388639B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9860008P 2008-09-19 2008-09-19

Publications (2)

Publication Number Publication Date
TW201016807A TW201016807A (en) 2010-05-01
TWI388639B true TWI388639B (zh) 2013-03-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW098130809A TWI388639B (zh) 2008-09-19 2009-09-11 用於低ｋ介電質之障蔽物漿液

Country Status (9)

Country Link
US (1) US8252687B2 (https=)
EP (1) EP2356192B1 (https=)
JP (1) JP5619009B2 (https=)
KR (1) KR101247890B1 (https=)
CN (1) CN102159662B (https=)
IL (1) IL211576A (https=)
MY (1) MY150487A (https=)
TW (1) TWI388639B (https=)
WO (1) WO2010033156A2 (https=)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5646996B2 (ja) * 2007-09-21 2014-12-24 キャボット マイクロエレクトロニクス コーポレイション 研磨組成物およびアミノシランを用いて処理された研削剤粒子の使用方法
EP2389417B1 (en) * 2009-01-20 2017-03-15 Cabot Corporation Compositons comprising silane modified metal oxides
KR102136432B1 (ko) * 2012-06-11 2020-07-21 캐보트 마이크로일렉트로닉스 코포레이션 몰리브덴을 연마하기 위한 조성물 및 방법
US10358579B2 (en) * 2013-12-03 2019-07-23 Cabot Microelectronics Corporation CMP compositions and methods for polishing nickel phosphorous surfaces
US9850402B2 (en) * 2013-12-09 2017-12-26 Cabot Microelectronics Corporation CMP compositions and methods for selective removal of silicon nitride
US20150233004A1 (en) * 2014-02-18 2015-08-20 Nano And Advanced Materials Institute Limited Method of selective recovery of valuable metals from mixed metal oxides
US9303189B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9238754B2 (en) 2014-03-11 2016-01-19 Cabot Microelectronics Corporation Composition for tungsten CMP
US9303188B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9309442B2 (en) 2014-03-21 2016-04-12 Cabot Microelectronics Corporation Composition for tungsten buffing
US9127187B1 (en) 2014-03-24 2015-09-08 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9303190B2 (en) 2014-03-24 2016-04-05 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
JP2015189829A (ja) * 2014-03-27 2015-11-02 株式会社フジミインコーポレーテッド 研磨用組成物
KR102464630B1 (ko) * 2014-06-25 2022-11-08 씨엠씨 머티리얼즈, 인코포레이티드 콜로이드성 실리카 화학적-기계적 연마 조성물
SG11201610330TA (en) * 2014-06-25 2017-01-27 Cabot Microelectronics Corp Tungsten chemical-mechanical polishing composition
SG11201610332PA (en) * 2014-06-25 2017-02-27 Cabot Microelectronics Corp Copper barrier chemical-mechanical polishing composition
US9868902B2 (en) * 2014-07-17 2018-01-16 Soulbrain Co., Ltd. Composition for etching
KR102418496B1 (ko) * 2014-12-24 2022-07-08 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 이를 이용하는 반도체 소자의 제조방법
CN105802511A (zh) * 2014-12-29 2016-07-27 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
US9771496B2 (en) 2015-10-28 2017-09-26 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant and cyclodextrin
US9631122B1 (en) 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
US9534148B1 (en) 2015-12-21 2017-01-03 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
WO2017117404A1 (en) * 2015-12-29 2017-07-06 Cabot Microelectronics Corporation Cmp processing composition comprising alkylamine and cyclodextrin
WO2017120396A1 (en) * 2016-01-06 2017-07-13 Cabot Microelectronics Corporation Method of polishing a low-k substrate
WO2018058347A1 (en) * 2016-09-28 2018-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing of tungsten using method and composition containing quaternary phosphonium compounds
US10586914B2 (en) * 2016-10-14 2020-03-10 Applied Materials, Inc. Method of forming ultra-smooth bottom electrode surface for depositing magnetic tunnel junctions
WO2018179061A1 (ja) * 2017-03-27 2018-10-04 日立化成株式会社 研磨液、研磨液セット及び研磨方法
US11043151B2 (en) * 2017-10-03 2021-06-22 Cmc Materials, Inc. Surface treated abrasive particles for tungsten buff applications
WO2019131885A1 (ja) 2017-12-27 2019-07-04 ニッタ・ハース株式会社 研磨用スラリー
KR102546609B1 (ko) * 2018-07-13 2023-06-23 오씨아이 주식회사 실리콘 기판 식각 용액
JP7028120B2 (ja) * 2018-09-20 2022-03-02 Jsr株式会社 化学機械研磨用水系分散体及びその製造方法、並びに化学機械研磨方法
TWI755060B (zh) * 2019-11-15 2022-02-11 日商Ｊｓｒ股份有限公司 化學機械研磨用組成物以及化學機械研磨方法
KR20220000284A (ko) * 2020-06-25 2022-01-03 삼성전자주식회사 화학적 기계적 연마용 슬러리 조성물
CN114686112A (zh) * 2020-12-30 2022-07-01 安集微电子科技（上海）股份有限公司 一种化学机械抛光液及其使用方法
JP2022131199A (ja) * 2021-02-26 2022-09-07 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
US12291655B2 (en) * 2021-04-27 2025-05-06 DuPont Electronic Materials Holding, Inc. Polishing composition and method of polishing a substrate having enhanced defect reduction
US11274230B1 (en) 2021-04-27 2022-03-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition
KR20240051552A (ko) 2022-10-13 2024-04-22 솔브레인 주식회사 화학적 기계적 연마용 슬러리 조성물 및 그 제조방법
KR20240051553A (ko) 2022-10-13 2024-04-22 솔브레인 주식회사 화학적 기계적 연마용 슬러리 조성물 및 그 제조방법
KR20240051550A (ko) 2022-10-13 2024-04-22 솔브레인 주식회사 화학적 기계적 연마용 슬러리 조성물 및 그 제조방법
KR20240051551A (ko) 2022-10-13 2024-04-22 솔브레인 주식회사 화학적 기계적 연마용 슬러리 조성물 및 그 제조방법

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US6592776B1 (en) * 1997-07-28 2003-07-15 Cabot Microelectronics Corporation Polishing composition for metal CMP
US6083840A (en) * 1998-11-25 2000-07-04 Arch Specialty Chemicals, Inc. Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
FR2789998B1 (fr) * 1999-02-18 2005-10-07 Clariant France Sa Nouvelle composition de polissage mecano-chimique d'une couche en un materiau conducteur d'aluminium ou d'alliage d'aluminium
EP1739146A3 (en) * 1999-07-07 2007-01-24 Cabot Microelectronics Corporation CMP compositions containing silane modified abrasive particles
KR100444239B1 (ko) * 1999-11-22 2004-08-11 제이에스알 가부시끼가이샤 복합화 입자의 제조 방법, 이 방법에 의해 제조되는복합화 입자 및 이 복합화 입자를 함유하는 화학 기계연마용 수계 분산체, 및 화학 기계 연마용 수계 분산체의제조 방법
EP1263906A1 (en) * 2000-02-02 2002-12-11 Rodel Holdings, Inc. Polishing composition
TW503154B (en) * 2000-02-04 2002-09-21 Showa Denko Kk LSI device polishing composition and method for reproducing LSI device
JP2001345295A (ja) * 2000-03-31 2001-12-14 Nikko Materials Co Ltd 化学機械研磨用スラリー
WO2004100242A1 (ja) * 2003-05-09 2004-11-18 Sanyo Chemical Industries, Ltd. Cmpプロセス用研磨液及び研磨方法
WO2004101222A2 (en) * 2003-05-12 2004-11-25 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for step-ii copper liner and other associated materials and method of using same
US7186653B2 (en) * 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing
JP4608196B2 (ja) * 2003-09-30 2011-01-05 株式会社フジミインコーポレーテッド 研磨用組成物
US20050090104A1 (en) 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
JP2007053214A (ja) * 2005-08-17 2007-03-01 Sumitomo Bakelite Co Ltd 研磨用組成物
JP2007095946A (ja) * 2005-09-28 2007-04-12 Fujifilm Corp 金属用研磨液及び研磨方法
JP2007214155A (ja) * 2006-02-07 2007-08-23 Fujifilm Corp バリア用研磨液及び化学的機械的研磨方法
JP2007273910A (ja) * 2006-03-31 2007-10-18 Fujifilm Corp 研磨用組成液
US20070254485A1 (en) 2006-04-28 2007-11-01 Daxin Mao Abrasive composition for electrochemical mechanical polishing
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
US9129907B2 (en) * 2006-09-08 2015-09-08 Cabot Microelectronics Corporation Onium-containing CMP compositions and methods of use thereof
JP5094112B2 (ja) * 2006-12-28 2012-12-12 富士フイルム株式会社 研磨液
JP5094139B2 (ja) * 2007-01-23 2012-12-12 富士フイルム株式会社 研磨液
JP5202258B2 (ja) * 2008-03-25 2013-06-05 富士フイルム株式会社 金属研磨用組成物、及び化学的機械的研磨方法

Also Published As

Publication number Publication date
US20100075502A1 (en) 2010-03-25
EP2356192B1 (en) 2020-01-15
TW201016807A (en) 2010-05-01
IL211576A (en) 2014-05-28
KR20110069107A (ko) 2011-06-22
EP2356192A4 (en) 2013-05-22
CN102159662A (zh) 2011-08-17
CN102159662B (zh) 2014-05-21
EP2356192A2 (en) 2011-08-17
MY150487A (en) 2014-01-30
JP2012503329A (ja) 2012-02-02
JP5619009B2 (ja) 2014-11-05
KR101247890B1 (ko) 2013-03-26
US8252687B2 (en) 2012-08-28
WO2010033156A2 (en) 2010-03-25
WO2010033156A3 (en) 2010-05-20
IL211576A0 (en) 2011-05-31

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