TWI382451B - 製造半導體鍍層基板之方法 - Google Patents

製造半導體鍍層基板之方法 Download PDF

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Publication number
TWI382451B
TWI382451B TW093141280A TW93141280A TWI382451B TW I382451 B TWI382451 B TW I382451B TW 093141280 A TW093141280 A TW 093141280A TW 93141280 A TW93141280 A TW 93141280A TW I382451 B TWI382451 B TW I382451B
Authority
TW
Taiwan
Prior art keywords
substrate
plasma
plating
coating
roughened
Prior art date
Application number
TW093141280A
Other languages
English (en)
Chinese (zh)
Other versions
TW200535926A (en
Inventor
戴維斯 伊安Ｍ
勞貝 大衛Ｐ
Original Assignee
量子全球技術公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 量子全球技術公司 filed Critical 量子全球技術公司
Publication of TW200535926A publication Critical patent/TW200535926A/zh
Application granted granted Critical
Publication of TWI382451B publication Critical patent/TWI382451B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134—Plasma spraying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Coating By Spraying Or Casting (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemically Coating (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
TW093141280A 2004-03-24 2004-12-30 製造半導體鍍層基板之方法 TWI382451B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/807,716 US20050215059A1 (en) 2004-03-24 2004-03-24 Process for producing semi-conductor coated substrate

Publications (2)

Publication Number Publication Date
TW200535926A TW200535926A (en) 2005-11-01
TWI382451B true TWI382451B (zh) 2013-01-11

Family

ID=34862056

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093141280A TWI382451B (zh) 2004-03-24 2004-12-30 製造半導體鍍層基板之方法

Country Status (8)

Country Link
US (1) US20050215059A1 (https=)
EP (1) EP1580292A1 (https=)
JP (1) JP4785834B2 (https=)
KR (1) KR20050094766A (https=)
CN (1) CN101304815A (https=)
IL (1) IL178084A (https=)
TW (1) TWI382451B (https=)
WO (1) WO2005098930A2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8067067B2 (en) * 2002-02-14 2011-11-29 Applied Materials, Inc. Clean, dense yttrium oxide coating protecting semiconductor processing apparatus
US10242888B2 (en) 2007-04-27 2019-03-26 Applied Materials, Inc. Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance
US10622194B2 (en) 2007-04-27 2020-04-14 Applied Materials, Inc. Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance
EP2187843B1 (de) * 2007-09-13 2015-10-07 DERU GmbH Endoprothesenkomponente
US9090046B2 (en) * 2012-04-16 2015-07-28 Applied Materials, Inc. Ceramic coated article and process for applying ceramic coating
CN109112464A (zh) * 2018-09-20 2019-01-01 安徽富乐德科技发展有限公司 一种半导体清洗腔陶瓷溶射层的制备方法
CN114381683B (zh) * 2020-10-20 2024-04-12 中国兵器工业第五九研究所 基体防护涂层的制备方法

Citations (2)

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US20020094686A1 (en) * 1999-06-28 2002-07-18 Gorczyca Thomas Bert Semiconductor processing article
US20030129772A1 (en) * 2001-12-07 2003-07-10 Komico Co., Ltd Method of fabricating and repairing ceramic components for semiconductor fabrication using plasma spray process

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US20020094686A1 (en) * 1999-06-28 2002-07-18 Gorczyca Thomas Bert Semiconductor processing article
US20030129772A1 (en) * 2001-12-07 2003-07-10 Komico Co., Ltd Method of fabricating and repairing ceramic components for semiconductor fabrication using plasma spray process

Also Published As

Publication number Publication date
WO2005098930A2 (en) 2005-10-20
EP1580292A1 (en) 2005-09-28
TW200535926A (en) 2005-11-01
JP2007530788A (ja) 2007-11-01
JP4785834B2 (ja) 2011-10-05
US20050215059A1 (en) 2005-09-29
KR20050094766A (ko) 2005-09-28
IL178084A (en) 2013-09-30
IL178084A0 (en) 2006-12-31
CN101304815A (zh) 2008-11-12
WO2005098930A3 (en) 2006-11-09

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