KR20050094766A - 반도체 코팅 기판의 제조방법 - Google Patents

반도체 코팅 기판의 제조방법 Download PDF

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Publication number
KR20050094766A
KR20050094766A KR1020050005915A KR20050005915A KR20050094766A KR 20050094766 A KR20050094766 A KR 20050094766A KR 1020050005915 A KR1020050005915 A KR 1020050005915A KR 20050005915 A KR20050005915 A KR 20050005915A KR 20050094766 A KR20050094766 A KR 20050094766A
Authority
KR
South Korea
Prior art keywords
substrate
semiconductor processing
substrate suitable
making
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020050005915A
Other languages
English (en)
Korean (ko)
Inventor
데이비스이안엠
라우베데이비드피
Original Assignee
더 비오씨 그룹 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 더 비오씨 그룹 인코포레이티드 filed Critical 더 비오씨 그룹 인코포레이티드
Publication of KR20050094766A publication Critical patent/KR20050094766A/ko
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134—Plasma spraying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Coating By Spraying Or Casting (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemically Coating (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
KR1020050005915A 2004-03-24 2005-01-21 반도체 코팅 기판의 제조방법 Ceased KR20050094766A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/807,716 US20050215059A1 (en) 2004-03-24 2004-03-24 Process for producing semi-conductor coated substrate
US10/807,716 2004-03-24

Publications (1)

Publication Number Publication Date
KR20050094766A true KR20050094766A (ko) 2005-09-28

Family

ID=34862056

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050005915A Ceased KR20050094766A (ko) 2004-03-24 2005-01-21 반도체 코팅 기판의 제조방법

Country Status (8)

Country Link
US (1) US20050215059A1 (https=)
EP (1) EP1580292A1 (https=)
JP (1) JP4785834B2 (https=)
KR (1) KR20050094766A (https=)
CN (1) CN101304815A (https=)
IL (1) IL178084A (https=)
TW (1) TWI382451B (https=)
WO (1) WO2005098930A2 (https=)

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US8067067B2 (en) * 2002-02-14 2011-11-29 Applied Materials, Inc. Clean, dense yttrium oxide coating protecting semiconductor processing apparatus
US10242888B2 (en) 2007-04-27 2019-03-26 Applied Materials, Inc. Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance
US10622194B2 (en) 2007-04-27 2020-04-14 Applied Materials, Inc. Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance
EP2187843B1 (de) * 2007-09-13 2015-10-07 DERU GmbH Endoprothesenkomponente
US9090046B2 (en) * 2012-04-16 2015-07-28 Applied Materials, Inc. Ceramic coated article and process for applying ceramic coating
CN109112464A (zh) * 2018-09-20 2019-01-01 安徽富乐德科技发展有限公司 一种半导体清洗腔陶瓷溶射层的制备方法
CN114381683B (zh) * 2020-10-20 2024-04-12 中国兵器工业第五九研究所 基体防护涂层的制备方法

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JPS5172934A (https=) * 1974-12-23 1976-06-24 Mitsubishi Heavy Ind Ltd
US4245229A (en) * 1979-01-26 1981-01-13 Exxon Research & Engineering Co. Optical recording medium
US4349408A (en) * 1981-03-26 1982-09-14 Rca Corporation Method of depositing a refractory metal on a semiconductor substrate
US4656730A (en) * 1984-11-23 1987-04-14 American Telephone And Telegraph Company, At&T Bell Laboratories Method for fabricating CMOS devices
GB2185758B (en) * 1985-12-28 1990-09-05 Canon Kk Method for forming deposited film
US5391275A (en) * 1990-03-02 1995-02-21 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
US5202008A (en) * 1990-03-02 1993-04-13 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
JPH0598412A (ja) * 1991-10-07 1993-04-20 Nippon Steel Corp 被溶射材料の前処理方法
FI92897C (fi) * 1993-07-20 1995-01-10 Planar International Oy Ltd Menetelmä kerrosrakenteen valmistamiseksi elektroluminenssikomponentteja varten
JP3347555B2 (ja) * 1994-12-01 2002-11-20 キヤノン株式会社 リチウム二次電池の負極の作製方法
US5651797A (en) * 1995-08-07 1997-07-29 Joray Corporation Apparatus and method for the immersion cleaning and transport of semiconductor components
US5788304A (en) * 1996-05-17 1998-08-04 Micron Technology, Inc. Wafer carrier having both a rigid structure and resistance to corrosive environments
US5916454A (en) * 1996-08-30 1999-06-29 Lam Research Corporation Methods and apparatus for reducing byproduct particle generation in a plasma processing chamber
JPH1146006A (ja) * 1997-07-25 1999-02-16 Canon Inc 光起電力素子およびその製造方法
US6087191A (en) * 1998-01-22 2000-07-11 International Business Machines Corporation Method for repairing surface defects
US6221269B1 (en) * 1999-01-19 2001-04-24 International Business Machines Corporation Method of etching molybdenum metal from substrates
US6368410B1 (en) * 1999-06-28 2002-04-09 General Electric Company Semiconductor processing article
US6504233B1 (en) * 1999-06-28 2003-01-07 General Electric Company Semiconductor processing component
US6296716B1 (en) * 1999-10-01 2001-10-02 Saint-Gobain Ceramics And Plastics, Inc. Process for cleaning ceramic articles
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JP2002249864A (ja) * 2000-04-18 2002-09-06 Ngk Insulators Ltd 耐ハロゲンガスプラズマ用部材およびその製造方法
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Also Published As

Publication number Publication date
WO2005098930A2 (en) 2005-10-20
EP1580292A1 (en) 2005-09-28
TW200535926A (en) 2005-11-01
JP2007530788A (ja) 2007-11-01
TWI382451B (zh) 2013-01-11
JP4785834B2 (ja) 2011-10-05
US20050215059A1 (en) 2005-09-29
IL178084A (en) 2013-09-30
IL178084A0 (en) 2006-12-31
CN101304815A (zh) 2008-11-12
WO2005098930A3 (en) 2006-11-09

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