CN116695048A - 钇基喷涂涂层和制造方法 - Google Patents
钇基喷涂涂层和制造方法 Download PDFInfo
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- CN116695048A CN116695048A CN202310896312.4A CN202310896312A CN116695048A CN 116695048 A CN116695048 A CN 116695048A CN 202310896312 A CN202310896312 A CN 202310896312A CN 116695048 A CN116695048 A CN 116695048A
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- acid
- yttrium
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- 229910052727 yttrium Inorganic materials 0.000 title claims abstract description 53
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 238000005507 spraying Methods 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title abstract description 17
- 239000002245 particle Substances 0.000 claims abstract description 58
- 238000000576 coating method Methods 0.000 claims abstract description 43
- 239000011248 coating agent Substances 0.000 claims abstract description 39
- 238000004140 cleaning Methods 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 150000007524 organic acids Chemical class 0.000 claims abstract description 11
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 15
- 239000007864 aqueous solution Substances 0.000 claims description 11
- 239000002253 acid Substances 0.000 claims description 10
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 10
- 229940105963 yttrium fluoride Drugs 0.000 claims description 10
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 claims description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- CHBIYWIUHAZZNR-UHFFFAOYSA-N [Y].FOF Chemical compound [Y].FOF CHBIYWIUHAZZNR-UHFFFAOYSA-N 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 9
- 239000007921 spray Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 8
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 7
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 150000001261 hydroxy acids Chemical class 0.000 claims description 6
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 6
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 6
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 5
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 235000002906 tartaric acid Nutrition 0.000 claims description 5
- 239000011975 tartaric acid Substances 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 3
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 3
- 235000019253 formic acid Nutrition 0.000 claims description 3
- 239000004310 lactic acid Substances 0.000 claims description 3
- 235000014655 lactic acid Nutrition 0.000 claims description 3
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 3
- 239000011976 maleic acid Substances 0.000 claims description 3
- 229940098779 methanesulfonic acid Drugs 0.000 claims description 3
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 12
- 150000007522 mineralic acids Chemical class 0.000 abstract description 8
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 abstract description 8
- 238000005260 corrosion Methods 0.000 abstract description 7
- 230000007797 corrosion Effects 0.000 abstract description 7
- 239000000203 mixture Substances 0.000 abstract description 7
- 239000007788 liquid Substances 0.000 abstract description 6
- 229910052736 halogen Inorganic materials 0.000 abstract description 4
- 150000002367 halogens Chemical class 0.000 abstract description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 238000010410 dusting Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 150000001735 carboxylic acids Chemical class 0.000 description 6
- 238000004090 dissolution Methods 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 238000007751 thermal spraying Methods 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 4
- 238000007750 plasma spraying Methods 0.000 description 4
- 229910021642 ultra pure water Inorganic materials 0.000 description 4
- 239000012498 ultrapure water Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical class F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical class O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid group Chemical class S(O)(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 150000003460 sulfonic acids Chemical class 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000011260 aqueous acid Substances 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 150000004653 carbonic acids Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- -1 lactic acid Chemical compound 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000011236 particulate material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- 238000010290 vacuum plasma spraying Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/06—Metallic material
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
- C23C4/11—Oxides
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- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/134—Plasma spraying
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/18—After-treatment
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- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/18—After-treatment
- C23C4/185—Separation of the coating from the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
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- Metallurgy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Inorganic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Coating By Spraying Or Casting (AREA)
- Drying Of Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
本发明涉及钇基喷涂涂层和制造方法。通过将氧化钇、氟化钇或氧氟化钇热喷涂到基材上以形成10‑500μm厚的涂层，并且用有机酸、无机酸或其混合物的清洁液对该涂层进行化学清洁直至该涂层表面具有300nm以下的尺寸的颗粒的粒数变为不多于5个颗粒/mm2，从而得到钇基喷涂涂层。该钇基喷涂涂层即使在卤素气体等离子体气氛中也显示出高耐腐蚀性并且防止钇基颗粒在蚀刻处理过程中剥落。
Description
本申请是申请号为201610616268.7、申请日为2016年07月29日、发明名称为“钇基喷涂涂层和制造方法”的中国专利申请的分案申请。
相关申请的交叉引用
本非临时申请根据35U.S.C.§119(a)要求于2015年7月31日在日本提交的专利申请No.2015-151568的优先权，由此通过引用将其全部内容并入本文。
技术领域
本发明涉及通过热喷涂氧化钇、氟化钇和/或氧氟化钇而形成的钇基喷涂涂层，其适合作为半导体器件制造工艺中遇到的在腐蚀性等离子体气氛中使用的部件和物品上的低起灰涂层。
背景技术
在用于制造半导体器件的现有技术方法中，常常在腐蚀性卤素系气体等离子体气氛中进行处理。典型的腐蚀性卤素系气体为氟系气体例如SF6、CF4、CHF3、ClF3和HF以及氯系气体例如Cl2、BCl3和HCl。用于这样的处理的装置典型地包括在它们的表面上具有耐腐蚀的涂层的部件或组件。例如，已知具有通过将氧化钇(专利文献1)和氟化钇(专利文献2和3)喷涂于金属铝和氧化铝陶瓷基材的表面而形成的涂层的部件或组件完全耐腐蚀并且在实际中使用。
随着目前的半导体技术以更高的集成度为目标，相互连接部的尺寸接近20nm以下。器件制造工艺中，钇基颗粒在蚀刻处理过程中可能从部件上的钇基涂层的表面剥落并且掉落到硅片上而干扰该蚀刻处理。这使得半导体器件的制造产量降低。存在着从钇基涂层表面剥落的钇基颗粒的数目在蚀刻处理的初期高并且随着蚀刻时间的经过而减小的倾向。通过引用也将涉及喷涂技术的专利文献4和5并入本文。
引用文献列表
专利文献1:JP 4006596(USP 6,852,433)
专利文献2:JP 3523222(USP 6,685,991)
专利文献3:JP-A 2011-514933(US 20090214825)
专利文献4:JP-A 2008-133528(USP 8,349,450)
专利文献5:JP 4591722(US 20130122218)
发明内容
本发明的目的是提供通过热喷涂选自氧化钇、氟化钇和氧氟化钇中的一种或多种化合物而形成的钇基喷涂涂层，其能够基本上防止在蚀刻或类似处理过程中钇基颗粒从该涂层表面剥落，并因此在半导体器件制造工艺过程中适合用作在腐蚀性等离子体气氛中使用的部件或物品上的低起灰涂层。
通过等离子体喷涂形成氧化钇、氟化钇或氧氟化钇的涂层时，在等离子体焰中颗粒材料被熔化为小滴，然后小滴在基材上沉积并且凝固以形成涂层。如果材料颗粒的大小太小，一些颗粒可能没有进入焰中，而是以未熔化状态沉积在该涂层上。而且，一旦颗粒熔化，有时小滴可能在该涂层上爆裂为更为细小的小滴，其将作为更为细小的颗粒沉积在该涂层上。在喷涂过程中在该涂层表面上沉积的这样细小(未熔化或爆裂)的颗粒被后续的小滴覆盖并因此融入到致密涂层中，而在接近喷涂的结束在该涂层表面上沉积的异物颗粒原样地保持结合。难以通过超纯水清洁、超声清洁等将该结合的颗粒除去。如果细颗粒在蚀刻处理过程中剥落，它们成为起灰源。专利文献5提供了通过抛光或喷砂来将粘附颗粒(即，通过超纯水清洁或超声清洁不能除去的颗粒)物理去除。但是，由于该处理自身就产生细颗粒，因此例如抛光这样的物理去除并不太有效。
本发明人已发现通过热喷涂选自氧化钇、氟化钇和氧氟化钇中的一种或多种化合物以形成10-500μm厚的涂层，并且使用有机酸或无机酸或其混合物的含水溶液的形式的清洁液对该涂层进行化学清洁以有效地将固定于该涂层表面的钇基颗粒除去直至该涂层表面具有300nm以下的大小的颗粒的粒数成为不多于5个颗粒/mm2，从而得到改进的钇基喷涂涂层。由于得到的钇基喷涂涂层防止钇基颗粒剥落以防止在随后的蚀刻处理过程中引起不良影响，因此其适合在半导体器件制造工艺中用作在腐蚀性等离子体气氛中使用的部件和物品上的低起灰涂层。
一方面，本发明提供钇基喷涂涂层，其包括选自由氧化钇、氟化钇和氧氟化钇组成的组中的一种或多种化合物并且具有10-500μm的厚度，其中具有300nm以下的大小的颗粒以每平方毫米不多于5个颗粒的粒数存在于该涂层表面上。
优选地，该钇基喷涂涂层具有80-400μm的厚度。
典型地，将该钇基喷涂涂层喷涂到金属铝、氧化铝或金属硅的基材的表面上。
另一方面，本发明提供制备钇基喷涂涂层的方法，包括下述步骤：热喷涂颗粒喷涂材料以形成具有10-500μm的厚度的钇基喷涂涂层，该颗粒喷涂材料包括选自由氧化钇、氟化钇和氧氟化钇组成的组中的至少一种化合物；和用清洁液对该涂层的表面进行化学清洁直至具有300nm以下的大小的颗粒的粒数为每平方毫米的该涂层表面不多于5个颗粒，该清洁液为有机酸含水溶液、无机酸含水溶液或有机酸/无机酸含水溶液。
该清洁液优选为选自由单官能羧酸、二官能羧酸、三官能羧酸、羟基酸、磺酸、硝酸、硫酸、碳酸、氢氟酸、和酸式氟化铵或其混合物组成的组中的酸的含水溶液。典型地，该单官能羧酸为甲酸或乙酸，该二官能羧酸为马来酸、酒石酸或邻苯二甲酸，该三官能羧酸为柠檬酸，该羟基酸为乳酸，并且该磺酸为甲磺酸。
优选的实施方案中，该化学清洁步骤包括将该钇基喷涂涂层浸入该清洁液中以将该涂层从其表面溶解到至少0.01μm的深度，以由此将该涂层表面上的300nm以下的大小的颗粒除去。
本发明的有利效果
本发明的钇基喷涂涂层在腐蚀性卤素系气体等离子体气氛中处理过程中显示出高耐腐蚀性，并且防止起灰，该起灰是半导体器件制造工艺中蚀刻或类似处理过程中钇基颗粒剥落的结果，其对于改善半导体器件的制造产量有效。因此该钇基喷涂涂层适合用作暴露于腐蚀性等离子体气氛的部件和物品上的低起灰涂层。
附图说明
图1、2、3和4分别为实施例1、2、3和4中的钇基喷涂涂层的表面的SEM像。
图5和6分别为比较例1和2中的钇基喷涂涂层的表面的SEM像。
具体实施方式
通过将选自氧化钇、氟化钇和氧氟化钇中的一种或多种化合物热喷涂而形成本发明的钇基喷涂涂层。
对基材的热喷涂优选为大气等离子体喷涂或真空等离子体喷涂。在此使用的等离子体气体可以为氮/氢、氩/氢、氩/氦、氩/氮、氩单独、或氮气单独，但并不限于此。考虑半导体制造设备的部件或组件时，进行热喷涂的基材的实例包括，但并不限于，不锈钢、铝、镍、铬、锌、及其合金、金属硅、氧化铝、氮化铝、氮化硅、碳化硅、和石英玻璃的基材。对热喷涂氧化钇、氟化钇或氧氟化钇的条件并无特别限制。可取决于基材的种类、颗粒大小和喷涂材料的组成、以及得到的喷涂组件的具体用途来适当地确定热喷涂条件。
例如，在金属铝基材上形成氧化钇涂层时，可通过使用具有约20μm的平均粒径D50的氧化钇粉末和40L/min的氩和5L/min的氢的气体混合物的氩/氢大气等离子体喷涂来将其沉积。可取决于喷涂组件的具体用途来适当地确定热喷涂条件，该热喷涂条件包括喷射距离、电流值和电压值。同样，可适当地调节氩气和氢气的供给速率。
喷涂涂层，即钇基喷涂涂层应具有10-500μm的厚度。小于10μm厚的涂层可能耐腐蚀性较低或者在下述的清洁步骤中使基材表面部分地暴露。由于耐腐蚀性的进一步改善不可预期，因此大于500μm厚的涂层可能仅仅增加成本。该涂层的厚度优选为80-400μm，更优选为100-400μm，进一步优选为100-300μm。
根据本发明，然后用预选的清洁液对该钇基喷涂涂层的表面进行清洁以除去固定于表面的钇基颗粒直至该涂层表面上具有300nm以下的大小的钇基颗粒的粒数(或数目)成为不多于5个颗粒/平方毫米(mm2)。当然，最优选该涂层表面上具有300nm以下的大小的钇基颗粒的粒数为0。只要该粒数不多于5个颗粒/mm2，在半导体器件制造工艺中蚀刻处理过程中就不会发生导致生产产量显著损失的程度的起灰。本文中使用的钇基颗粒的“大小”是指在扫描电子显微镜(SEM)等下通过显微镜检查所测定的各个颗粒的最大直径。由图5和6的图像可以看到，在喷涂涂层表面上不存在或只存在少许大小超过300nm的颗粒。具有300nm以下的大小的颗粒的去除意味着基本上全部抑制颗粒的除去。
该清洁液为有机酸的含水溶液、无机酸的含水溶液或有机酸和无机酸混合的含水溶液。对该有机酸并无特别限制，只要其为水溶性。适合的有机酸包括，但并不限于，单官能羧酸例如甲酸和乙酸，二官能羧酸例如马来酸、酒石酸和邻苯二甲酸，三官能羧酸例如柠檬酸，羟基酸例如乳酸，和磺酸例如甲磺酸。其中，优选酒石酸和柠檬酸，原因在于它们可食用、无毒并且容易处理。对无机酸并无特别限制，只要其为水溶性。适合的无机酸包括硝酸、硫酸、碳酸、氢氟酸、和酸式氟化铵。
对清洁技术并无特别限制。优选地，将其表面上形成有钇基喷涂涂层的基材的形式的部件或组件全部浸入该清洁液中，原因在于该技术有效并且高效。对于容易在酸中溶解的金属铝和硅的那些基材，在将强酸用于清洁时，优选地用树脂带或树脂片将应避免被酸腐蚀的基材的区域掩蔽。将弱的有机酸，例如羧酸或羟基酸例如邻苯二甲酸、酒石酸或柠檬酸用于清洁时，可以没有掩蔽地进行清洁。对于那些耐酸性的石英玻璃或Al2O3陶瓷的基材，即使使用强酸溶液例如硝酸也可以没有掩蔽地进行清洁。一些情况下，可将基于酸和盐的组合的缓冲溶液用作清洁液。
用清洁液对钇基喷涂涂层进行化学清洁以从该涂层表面溶解薄层，以除去成为起灰源的具有300nm以下的大小的颗粒。溶解深度优选为距离最初涂层表面的至少0.01μm。尽管溶解深度的上限并不严格，但溶解深度优选为20μm以下。更优选地，该溶解深度为距离涂层表面的1-20μm。小于0.01μm的溶解深度可能不足以除去具有300nm以下的尺寸的颗粒并且无法达到不多于5个颗粒/mm2的粒数。超过20μm的溶解深度可能仅仅使涂层更薄而没有进一步改善颗粒的去除。
清洁后，用超纯水对该涂层进行冲洗以彻底地除去酸并且在真空中或在大气压下干燥。
在SEM下观察干涂层表面的二次电子像(放大倍率×10,000或更大)时，可检测到该涂层表面上具有300nm以下的大小的钇基颗粒。根据本发明，通过该清洁步骤将钇基颗粒从该涂层表面除去直至在表面上颗粒的粒数达到不多于5个颗粒/mm2。
实施例
以下通过例示而非通过限制来给出实施例。
实施例1-4和比较例1和2
喷涂涂层的制备
通过将表1中所示的涂覆材料热喷涂到表1中所示的材料的基材的表面上，将该涂覆的基材浸入清洁液中以清洁该涂层表面，用超纯水充分地冲洗，并且真空干燥，从而得到钇基喷涂涂层，该清洁液为表1中所示的清洁剂的含水溶液。在SEM下观察这样得到的钇基涂层的表面，并且对该表面上具有300nm以下的大小的钇基颗粒进行检查和计数。将结果示于表1中并且将SEM像示于图1-6中。应指出地是，通过使用40L/min的氩和8L/min的氢的气体混合物的大气等离子体喷涂，形成了该钇基喷涂涂层。
表1
由表1和图1-6可以看到，实施例1-4中的钇基喷涂涂层在它们的表面上不带有颗粒，而大量的颗粒出现在省略了用酸的含水溶液或清洁剂清洁的比较例1和2中的钇基喷涂涂层上。容易推测这些颗粒在蚀刻处理过程中引起灰尘产生。使用其上沉积有实施例1-4的钇基喷涂涂层的部件或组件时，基本上防止起灰，该起灰是半导体器件制造工艺中蚀刻处理过程中钇基颗粒剥落的结果。这会最终改善半导体器件的制造产量。
通过引用将日本专利申请No.2015-151568并入本文中。
尽管已对一些优选的实施方案进行了说明，但根据上述教导可对其进行许多变形和改变。因此可理解，在不脱离所附权利要求的范围的情况下可在具体说明以外实施本发明。
Claims (3)
1.制备钇基喷涂涂层的方法，包括下述步骤：
向容易在酸中溶解的基材上喷涂喷涂材料以形成具有10-500μm的厚度的钇基喷涂涂层，其中，所述喷涂材料包括选自由氧化钇、氟化钇和氧氟化钇组成的组中的至少一种的颗粒，用有机酸含水溶液对所述钇基喷涂涂层的表面进行化学清洁直至每平方毫米的所述涂层表面具有300nm以下的大小的颗粒的粒数为不多于5个颗粒，
所述有机酸含水溶液为选自由单官能羧酸、二官能羧酸、三官能羧酸、羟基酸和磺酸组成的组中的一种的含水溶液或者两种以上的混合含水溶液。
2.根据权利要求1所述的制备钇基喷涂涂层的方法，其中，所述容易在酸中溶解的基材选自由不锈钢、铝、镍、铬、锌、及其合金、以及金属硅组成的组。
3.根据权利要求1或2所述的制备钇基喷涂涂层的方法，其中，所述单官能羧酸为甲酸或乙酸，所述二官能羧酸为马来酸、酒石酸或邻苯二甲酸，所述三官能羧酸为柠檬酸，所述羟基酸为乳酸，并且所述磺酸为甲磺酸。
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| CN114250436B (zh) * | 2020-09-25 | 2024-03-29 | 中微半导体设备(上海)股份有限公司 | 耐腐蚀涂层制备方法、半导体零部件和等离子体反应装置 |
| KR102266658B1 (ko) * | 2020-12-10 | 2021-06-18 | 주식회사 미코 | 용사용 이트륨계 과립 분말 및 이를 이용한 용사 피막 |
| KR102266655B1 (ko) * | 2020-12-10 | 2021-06-18 | (주)코미코 | 이트륨계 과립 분말을 이용한 용사 피막의 제조 방법 및 이를 이용하여 제조된 이트륨계 용사 피막 |
| CN114649179A (zh) * | 2020-12-18 | 2022-06-21 | 中微半导体设备(上海)股份有限公司 | 半导体零部件、等离子处理装置及耐腐蚀涂层的形成方法 |
| CN112831744A (zh) * | 2020-12-31 | 2021-05-25 | 沈阳富创精密设备股份有限公司 | 一种应用于半导体设备的陶瓷涂层的制备方法 |
| WO2022259983A1 (ja) * | 2021-06-07 | 2022-12-15 | 株式会社新菱 | イットリウム系薄膜の密着性を改善する方法 |
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| KR101084553B1 (ko) * | 2003-10-17 | 2011-11-17 | 토소가부시키가이샤 | 진공장치용 부품과 그 제조방법 및 그것을 이용한 장치 |
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| JP5521184B2 (ja) * | 2012-01-17 | 2014-06-11 | トーカロ株式会社 | フッ化物溶射皮膜被覆部材の製造方法 |
| US8734907B2 (en) * | 2012-02-02 | 2014-05-27 | Sematech, Inc. | Coating of shield surfaces in deposition systems |
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| JP5939084B2 (ja) * | 2012-08-22 | 2016-06-22 | 信越化学工業株式会社 | 希土類元素オキシフッ化物粉末溶射材料の製造方法 |
| US20160254125A1 (en) * | 2015-02-27 | 2016-09-01 | Lam Research Corporation | Method for coating surfaces |
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| US20170029628A1 (en) | 2017-02-02 |
| KR20210114371A (ko) | 2021-09-23 |
| KR20230011461A (ko) | 2023-01-20 |
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| KR20170015236A (ko) | 2017-02-08 |
| TW201718912A (zh) | 2017-06-01 |
| US20170253955A1 (en) | 2017-09-07 |
| KR102602620B1 (ko) | 2023-11-16 |
| JP6500681B2 (ja) | 2019-04-17 |
| KR20210009410A (ko) | 2021-01-26 |
| JP2017031457A (ja) | 2017-02-09 |
| US20240043983A1 (en) | 2024-02-08 |
| CN106399896A (zh) | 2017-02-15 |
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