JP7358655B2 - プラズマ処理装置用保護皮膜の洗浄方法 - Google Patents
プラズマ処理装置用保護皮膜の洗浄方法 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims description 103
- 238000000034 method Methods 0.000 title claims description 61
- 238000004140 cleaning Methods 0.000 title claims description 50
- 230000001681 protective effect Effects 0.000 title claims description 27
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 38
- 229910017604 nitric acid Inorganic materials 0.000 claims description 38
- 238000010828 elution Methods 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 22
- 229910052727 yttrium Inorganic materials 0.000 claims description 20
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 19
- 230000007423 decrease Effects 0.000 claims description 16
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000011253 protective coating Substances 0.000 claims 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 21
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- 239000007789 gas Substances 0.000 description 17
- 238000007689 inspection Methods 0.000 description 13
- 239000011148 porous material Substances 0.000 description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 238000001020 plasma etching Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 238000007750 plasma spraying Methods 0.000 description 6
- 230000003746 surface roughness Effects 0.000 description 6
- 239000003463 adsorbent Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 4
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- 238000005520 cutting process Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
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- 230000003247 decreasing effect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 238000007751 thermal spraying Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- CHBIYWIUHAZZNR-UHFFFAOYSA-N [Y].FOF Chemical compound [Y].FOF CHBIYWIUHAZZNR-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
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- 230000005611 electricity Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- -1 oxo yttrium Chemical compound 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229940105963 yttrium fluoride Drugs 0.000 description 1
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/3151—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Engineering & Computer Science (AREA)
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- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
電子デバイスなどの製造工程では、プラズマエッチングが適用される場合がある。プラズマエッチングに用いられるプラズマ処理装置の処理室は、真空容器内部に配置されるため、アルミニウム、ステンレス等の金属から構成されている。プラズマ処理装置の処理室内壁はエッチングプロセス時に高周波プラズマとエッチングガスに曝されるため、内壁表面には耐プラズマ性に優れた皮膜を形成し保護する。このような保護皮膜としては、酸化イットリウム製の皮膜が用いられることが考えられる。
本発明の実施の形態に係るプラズマ処理装置の構成を、図1および図2を用いて説明する。図1は、本発明の実施の形態に係るプラズマ処理装置の構成の概略を模式的に示す縦断面図である。本図に示すプラズマ処理装置は、真空容器内部の処理室内にプラズマを形成して当該処理室内に配置された半導体ウエハなどの試料の表面に予め形成されたマスク層およびその下方の処理対象の膜層とを有する膜構造をプラズマを用いてエッチング処理するプラズマエッチング装置である。
次に、本実施の形態に関し、皮膜(溶射皮膜)の形成から、皮膜形成後の後処理を行う工程について、図3~図5を用いて説明する。
4 ウエハ
15 プラズマ
40 アース電極
41 側壁部材
42 皮膜
42a 狭弱部
42b 薄部
42c 気孔
43a 水吸着物
43b 静電吸着物
43c 応力固定物
100 プラズマ処理装置
Claims (6)
- 真空容器内部に配置された処理室内に載置された処理対象のウエハを当該処理室内に形成したプラズマを用いて処理するプラズマ処理装置の処理室内部に配置された基材の表面に形成され、前記プラズマに対する耐性を有する材料を含むプラズマ処理装置用保護皮膜の洗浄方法であって、
(a)表面にイットリウムを含むプラズマ処理装置用保護皮膜を備えた前記基材を用意する工程、
(b)前記基材を希硝酸液に浸漬し、前記プラズマ処理装置用保護皮膜に対し超音波照射を行うことで洗浄を行う工程、
を有し、
前記(b)工程では、前記超音波照射を開始してからのイットリウムの溶出速度が、順に第1減少、第1増加、第2減少を経た後であって、第2増加が起きる前に洗浄を停止する、プラズマ処理装置用保護皮膜の洗浄方法。 - 請求項1記載のプラズマ処理装置用保護皮膜の洗浄方法において、
前記希硝酸液の希硝酸濃度は、0.05mol/リットル以下である、プラズマ処理装置用保護皮膜の洗浄方法。 - 請求項1記載のプラズマ処理装置用保護皮膜の洗浄方法において、
前記希硝酸液の希硝酸濃度は、0.001mol/リットル以上である、プラズマ処理装置用保護皮膜の洗浄方法。 - 請求項1記載のプラズマ処理装置用保護皮膜の洗浄方法において、
前記希硝酸液の希硝酸濃度は、0.001mol/リットル以上、0.05mol/リットル以下である、プラズマ処理装置用保護皮膜の洗浄方法。 - 請求項1記載のプラズマ処理装置用保護皮膜の洗浄方法において、
前記(b)工程では、前記超音波照射を開始してから60分経過前に洗浄を停止する、プラズマ処理装置用保護皮膜の洗浄方法。 - 請求項5記載のプラズマ処理装置用保護皮膜の洗浄方法において、
前記(b)工程では、前記超音波照射を開始してから10分経過後に洗浄を停止する、プラズマ処理装置用保護皮膜の洗浄方法。
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JP (1) | JP7358655B2 (ja) |
KR (1) | KR20230031187A (ja) |
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WO (1) | WO2023026331A1 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2007007782A1 (ja) | 2005-07-14 | 2007-01-18 | Tohoku University | 多層構造体及びその洗浄方法 |
JP2009174000A (ja) | 2008-01-24 | 2009-08-06 | Shin Etsu Chem Co Ltd | セラミックス溶射部材及びその製造方法ならびにセラミックス溶射部材用研磨メディア |
JP2019519091A (ja) | 2016-04-01 | 2019-07-04 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | オキシフッ化物を沈殿させるクリーニングプロセス |
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JP2009176787A (ja) | 2008-01-22 | 2009-08-06 | Hitachi High-Technologies Corp | エッチング処理装置及びエッチング処理室用部材 |
JP6500681B2 (ja) * | 2015-07-31 | 2019-04-17 | 信越化学工業株式会社 | イットリウム系溶射皮膜、及びその製造方法 |
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- 2021-08-23 CN CN202180017270.1A patent/CN116018669A/zh active Pending
- 2021-08-23 US US17/802,639 patent/US20240203708A1/en active Pending
- 2021-08-23 KR KR1020227029775A patent/KR20230031187A/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2007007782A1 (ja) | 2005-07-14 | 2007-01-18 | Tohoku University | 多層構造体及びその洗浄方法 |
JP2009174000A (ja) | 2008-01-24 | 2009-08-06 | Shin Etsu Chem Co Ltd | セラミックス溶射部材及びその製造方法ならびにセラミックス溶射部材用研磨メディア |
JP2019519091A (ja) | 2016-04-01 | 2019-07-04 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | オキシフッ化物を沈殿させるクリーニングプロセス |
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US20240203708A1 (en) | 2024-06-20 |
WO2023026331A1 (ja) | 2023-03-02 |
JPWO2023026331A1 (ja) | 2023-03-02 |
KR20230031187A (ko) | 2023-03-07 |
CN116018669A (zh) | 2023-04-25 |
TW202309976A (zh) | 2023-03-01 |
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