TWI376763B - Asymmetric grounding of rectangular susceptor - Google Patents
Asymmetric grounding of rectangular susceptor Download PDFInfo
- Publication number
- TWI376763B TWI376763B TW099112068A TW99112068A TWI376763B TW I376763 B TWI376763 B TW I376763B TW 099112068 A TW099112068 A TW 099112068A TW 99112068 A TW99112068 A TW 99112068A TW I376763 B TWI376763 B TW I376763B
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- Taiwan
- Prior art keywords
- electrode
- chamber
- ground
- grounding
- base
- Prior art date
Links
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US91583307P | 2007-05-03 | 2007-05-03 | |
| US11/775,359 US7972470B2 (en) | 2007-05-03 | 2007-07-10 | Asymmetric grounding of rectangular susceptor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201042724A TW201042724A (en) | 2010-12-01 |
| TWI376763B true TWI376763B (en) | 2012-11-11 |
Family
ID=39939727
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099112068A TWI376763B (en) | 2007-05-03 | 2008-05-01 | Asymmetric grounding of rectangular susceptor |
| TW097116076A TWI377638B (en) | 2007-05-03 | 2008-05-01 | Asymmetric grounding of rectangular susceptor |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097116076A TWI377638B (en) | 2007-05-03 | 2008-05-01 | Asymmetric grounding of rectangular susceptor |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7972470B2 (enExample) |
| JP (1) | JP5427367B2 (enExample) |
| KR (2) | KR101011407B1 (enExample) |
| CN (2) | CN101906621B (enExample) |
| TW (2) | TWI376763B (enExample) |
Families Citing this family (70)
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| KR101374583B1 (ko) * | 2007-03-01 | 2014-03-17 | 어플라이드 머티어리얼스, 인코포레이티드 | Ｒｆ 셔터 |
| US7972470B2 (en) * | 2007-05-03 | 2011-07-05 | Applied Materials, Inc. | Asymmetric grounding of rectangular susceptor |
| US7988815B2 (en) * | 2007-07-26 | 2011-08-02 | Applied Materials, Inc. | Plasma reactor with reduced electrical skew using electrical bypass elements |
| CN101889325B (zh) * | 2007-12-06 | 2014-05-07 | 因特瓦克公司 | 用于衬底的两侧溅射蚀刻的系统和方法 |
| KR101166988B1 (ko) * | 2007-12-25 | 2012-07-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마 챔버의 전극에 대한 비대칭 ｒｆ 구동 |
| WO2010044895A2 (en) * | 2008-01-31 | 2010-04-22 | Applied Materials, Inc | Multiple phase rf power for electrode of plasma chamber |
| US20100136261A1 (en) * | 2008-12-03 | 2010-06-03 | Applied Materials, Inc. | Modulation of rf returning straps for uniformity control |
| WO2010065474A2 (en) * | 2008-12-03 | 2010-06-10 | Applied Materials, Inc. | Modulation of rf returning straps for uniformity control |
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| US8466697B2 (en) * | 2009-04-28 | 2013-06-18 | Lam Research Corporation | Arrangements for detecting discontinuity of flexible connections for current flow and methods thereof |
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| KR101127757B1 (ko) * | 2009-12-02 | 2012-03-23 | 주식회사 테스 | 서셉터 접지유닛, 이를 이용하여 서셉터 접지의 가변방법 및 이를 갖는 공정챔버 |
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| JP5375763B2 (ja) * | 2010-07-27 | 2013-12-25 | 三菱電機株式会社 | プラズマ装置およびこれを用いた半導体薄膜の製造方法 |
| CN102810770B (zh) * | 2011-05-31 | 2015-03-04 | 中微半导体设备(上海)有限公司 | 实现等离子体刻蚀腔体与阴极之间电连接的接地器件 |
| JP5824330B2 (ja) * | 2011-11-07 | 2015-11-25 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| US9083182B2 (en) | 2011-11-21 | 2015-07-14 | Lam Research Corporation | Bypass capacitors for high voltage bias power in the mid frequency RF range |
| US9263240B2 (en) * | 2011-11-22 | 2016-02-16 | Lam Research Corporation | Dual zone temperature control of upper electrodes |
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| KR102101192B1 (ko) * | 2012-07-27 | 2020-04-21 | 어플라이드 머티어리얼스, 인코포레이티드 | 조면화된 기판 지지부 |
| KR102017744B1 (ko) | 2012-12-12 | 2019-10-15 | 삼성디스플레이 주식회사 | 증착 장치, 이를 이용한 박막 형성 방법 및 유기 발광 표시 장치 제조 방법 |
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|---|---|
| CN101906621B (zh) | 2012-10-31 |
| CN101298670B (zh) | 2012-02-01 |
| US8877301B2 (en) | 2014-11-04 |
| JP2008274437A (ja) | 2008-11-13 |
| TWI377638B (en) | 2012-11-21 |
| JP5427367B2 (ja) | 2014-02-26 |
| US7972470B2 (en) | 2011-07-05 |
| US20110236599A1 (en) | 2011-09-29 |
| KR101011407B1 (ko) | 2011-01-28 |
| TW200910497A (en) | 2009-03-01 |
| US20080274297A1 (en) | 2008-11-06 |
| CN101298670A (zh) | 2008-11-05 |
| KR20100090675A (ko) | 2010-08-16 |
| KR101274659B1 (ko) | 2013-06-17 |
| CN101906621A (zh) | 2010-12-08 |
| KR20080097957A (ko) | 2008-11-06 |
| TW201042724A (en) | 2010-12-01 |
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