CN101906621B - 矩形基座的不对称接地 - Google Patents

矩形基座的不对称接地 Download PDF

Info

Publication number
CN101906621B
CN101906621B CN2010102514389A CN201010251438A CN101906621B CN 101906621 B CN101906621 B CN 101906621B CN 2010102514389 A CN2010102514389 A CN 2010102514389A CN 201010251438 A CN201010251438 A CN 201010251438A CN 101906621 B CN101906621 B CN 101906621B
Authority
CN
China
Prior art keywords
electrode
chamber
periphery
ground
sides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2010102514389A
Other languages
English (en)
Chinese (zh)
Other versions
CN101906621A (zh
Inventor
古田学
崔寿永
崔永镇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN101906621A publication Critical patent/CN101906621A/zh
Application granted granted Critical
Publication of CN101906621B publication Critical patent/CN101906621B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
CN2010102514389A 2007-05-03 2008-04-30 矩形基座的不对称接地 Active CN101906621B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US91583307P 2007-05-03 2007-05-03
US60/915,833 2007-05-03
US11/775,359 US7972470B2 (en) 2007-05-03 2007-07-10 Asymmetric grounding of rectangular susceptor
US11/775,359 2007-07-10

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2008100944949A Division CN101298670B (zh) 2007-05-03 2008-04-30 矩形基座的不对称接地

Publications (2)

Publication Number Publication Date
CN101906621A CN101906621A (zh) 2010-12-08
CN101906621B true CN101906621B (zh) 2012-10-31

Family

ID=39939727

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2010102514389A Active CN101906621B (zh) 2007-05-03 2008-04-30 矩形基座的不对称接地
CN2008100944949A Active CN101298670B (zh) 2007-05-03 2008-04-30 矩形基座的不对称接地

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2008100944949A Active CN101298670B (zh) 2007-05-03 2008-04-30 矩形基座的不对称接地

Country Status (5)

Country Link
US (2) US7972470B2 (enExample)
JP (1) JP5427367B2 (enExample)
KR (2) KR101011407B1 (enExample)
CN (2) CN101906621B (enExample)
TW (2) TWI376763B (enExample)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101374583B1 (ko) * 2007-03-01 2014-03-17 어플라이드 머티어리얼스, 인코포레이티드 Ｒｆ 셔터
US7972470B2 (en) * 2007-05-03 2011-07-05 Applied Materials, Inc. Asymmetric grounding of rectangular susceptor
US7988815B2 (en) * 2007-07-26 2011-08-02 Applied Materials, Inc. Plasma reactor with reduced electrical skew using electrical bypass elements
CN101889325B (zh) * 2007-12-06 2014-05-07 因特瓦克公司 用于衬底的两侧溅射蚀刻的系统和方法
KR101166988B1 (ko) * 2007-12-25 2012-07-24 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 챔버의 전극에 대한 비대칭 ｒｆ 구동
WO2010044895A2 (en) * 2008-01-31 2010-04-22 Applied Materials, Inc Multiple phase rf power for electrode of plasma chamber
US20100136261A1 (en) * 2008-12-03 2010-06-03 Applied Materials, Inc. Modulation of rf returning straps for uniformity control
WO2010065474A2 (en) * 2008-12-03 2010-06-10 Applied Materials, Inc. Modulation of rf returning straps for uniformity control
KR101534024B1 (ko) * 2008-12-10 2015-07-08 주성엔지니어링(주) 기판처리장치
WO2010094002A2 (en) * 2009-02-13 2010-08-19 Applied Materials, Inc. Rf bus and rf return bus for plasma chamber electrode
US8466697B2 (en) * 2009-04-28 2013-06-18 Lam Research Corporation Arrangements for detecting discontinuity of flexible connections for current flow and methods thereof
US9758869B2 (en) * 2009-05-13 2017-09-12 Applied Materials, Inc. Anodized showerhead
JP2010287639A (ja) * 2009-06-10 2010-12-24 Hitachi High-Technologies Corp プラズマ処理装置
US8360003B2 (en) 2009-07-13 2013-01-29 Applied Materials, Inc. Plasma reactor with uniform process rate distribution by improved RF ground return path
KR200476124Y1 (ko) * 2009-09-29 2015-01-30 어플라이드 머티어리얼스, 인코포레이티드 Ｒｆ­전력공급 샤워헤드를 위한 편심 접지 복귀
KR101127757B1 (ko) * 2009-12-02 2012-03-23 주식회사 테스 서셉터 접지유닛, 이를 이용하여 서셉터 접지의 가변방법 및 이를 갖는 공정챔버
JP5782226B2 (ja) * 2010-03-24 2015-09-24 東京エレクトロン株式会社 基板処理装置
CN102884610A (zh) * 2010-05-12 2013-01-16 应用材料公司 局限工艺空间的pecvd腔室
JP5375763B2 (ja) * 2010-07-27 2013-12-25 三菱電機株式会社 プラズマ装置およびこれを用いた半導体薄膜の製造方法
CN102810770B (zh) * 2011-05-31 2015-03-04 中微半导体设备(上海)有限公司 实现等离子体刻蚀腔体与阴极之间电连接的接地器件
JP5824330B2 (ja) * 2011-11-07 2015-11-25 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US9083182B2 (en) 2011-11-21 2015-07-14 Lam Research Corporation Bypass capacitors for high voltage bias power in the mid frequency RF range
US9263240B2 (en) * 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
US8898889B2 (en) 2011-11-22 2014-12-02 Lam Research Corporation Chuck assembly for plasma processing
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
US9396908B2 (en) 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
CN104024477B (zh) * 2011-11-23 2016-05-18 朗姆研究公司 多区域气体注入上电极系统
WO2013078434A1 (en) * 2011-11-24 2013-05-30 Lam Research Corporation Plasma processing chamber with flexible symmetric rf return strap
CN102543641B (zh) * 2012-01-20 2015-07-08 中微半导体设备(上海)有限公司 实现等离子体刻蚀腔体弹性接触的连接器件
WO2013122954A1 (en) * 2012-02-13 2013-08-22 Applied Materials, Inc. Linear pecvd apparatus
US8911588B2 (en) * 2012-03-19 2014-12-16 Lam Research Corporation Methods and apparatus for selectively modifying RF current paths in a plasma processing system
US9245720B2 (en) * 2012-06-12 2016-01-26 Lam Research Corporation Methods and apparatus for detecting azimuthal non-uniformity in a plasma processing system
KR102101192B1 (ko) * 2012-07-27 2020-04-21 어플라이드 머티어리얼스, 인코포레이티드 조면화된 기판 지지부
KR102017744B1 (ko) 2012-12-12 2019-10-15 삼성디스플레이 주식회사 증착 장치, 이를 이용한 박막 형성 방법 및 유기 발광 표시 장치 제조 방법
TW201437423A (zh) 2013-02-21 2014-10-01 Applied Materials Inc 用於注射器至基板的空隙控制之裝置及方法
WO2014164743A1 (en) * 2013-03-11 2014-10-09 Applied Materials, Inc. High temperature process chamber lid
CN103474319B (zh) * 2013-09-12 2015-11-18 武汉新芯集成电路制造有限公司 一种减少晶圆葡萄球状缺陷的离子注入机
US20150211114A1 (en) * 2014-01-30 2015-07-30 Applied Materials, Inc. Bottom pump and purge and bottom ozone clean hardware to reduce fall-on particle defects
JP6233209B2 (ja) * 2014-06-30 2017-11-22 豊田合成株式会社 サセプターとその製造方法
CN104368288A (zh) * 2014-11-25 2015-02-25 三明学院 低真空低温射频感性耦合等离子体反应器及其使用方法
TW201629264A (zh) 2015-01-22 2016-08-16 應用材料股份有限公司 用於間隙偵測的智能止動器及控制機制
CN104947072B (zh) * 2015-05-14 2017-12-05 昆山龙腾光电有限公司 在基板上制作氧化硅薄膜的方法以及薄膜晶体管阵列基板的制作方法
US10597779B2 (en) 2015-06-05 2020-03-24 Applied Materials, Inc. Susceptor position and rational apparatus and methods of use
TWI723024B (zh) 2015-06-26 2021-04-01 美商應用材料股份有限公司 用於改良的氣體分配的遞迴注入設備
KR102099382B1 (ko) * 2015-10-07 2020-04-13 주식회사 원익아이피에스 기판처리장치
US20170365449A1 (en) * 2016-06-21 2017-12-21 Applied Materials, Inc. Rf return strap shielding cover
JP6972131B2 (ja) * 2016-12-27 2021-11-24 エヴァテック・アーゲー 真空プラズマ加工対象物処理装置
KR102399343B1 (ko) * 2017-05-29 2022-05-19 삼성디스플레이 주식회사 화학기상 증착장치
EP3588533A1 (en) * 2018-06-21 2020-01-01 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Plasma source and method of operating the same
CN111326389B (zh) * 2018-12-17 2023-06-16 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
CN111326387B (zh) 2018-12-17 2023-04-21 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
KR102700366B1 (ko) * 2019-01-29 2024-08-30 주성엔지니어링(주) 샤워헤드 및 이를 포함하는 기판처리장치
US12467139B2 (en) * 2019-03-29 2025-11-11 Applied Materials Inc. Multizone flow distribution system
JP7446335B2 (ja) * 2019-04-29 2024-03-08 アプライド マテリアルズ インコーポレイテッド 接地用ストラップアセンブリ
US11549183B2 (en) * 2019-05-24 2023-01-10 Applied Materials, Inc. Showerhead with inlet mixer
CN110289235B (zh) * 2019-07-09 2021-07-09 北京北方华创微电子装备有限公司 开盖装置和半导体加工设备
CN112447475B (zh) * 2019-09-05 2023-09-29 中微半导体设备(上海)股份有限公司 一种具有柔性电介质薄片的等离子体处理装置
JP7401279B2 (ja) 2019-12-06 2023-12-19 株式会社アドバンテック 対象物を加熱及び冷却するためのステージ
JP7413099B2 (ja) * 2020-03-16 2024-01-15 東京エレクトロン株式会社 成膜方法および成膜装置
US11443921B2 (en) * 2020-06-11 2022-09-13 Applied Materials, Inc. Radio frequency ground system and method
KR20220031849A (ko) * 2020-09-04 2022-03-14 삼성디스플레이 주식회사 증착 장치
CN114203506B (zh) * 2020-09-18 2024-03-12 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及其方法
CN114678247B (zh) * 2020-12-24 2025-09-09 中微半导体设备(上海)股份有限公司 一种接地环及其调节方法及等离子体处理装置
JP7458337B2 (ja) 2021-02-09 2024-03-29 株式会社アドバンテック 対象物を加熱及び冷却するためのステージ
JP7560214B2 (ja) * 2021-03-11 2024-10-02 東京エレクトロン株式会社 着火方法及びプラズマ処理装置
JP7610034B2 (ja) * 2021-04-01 2025-01-07 アプライド マテリアルズ インコーポレイテッド プラズマを使用した薄膜形成のグランドリターン
US12378669B2 (en) 2022-01-28 2025-08-05 Applied Materials, Inc. Ground return for thin film formation using plasma
TWI817606B (zh) * 2022-07-13 2023-10-01 友威科技股份有限公司 雙電極連續式電漿製程系統
USD1080812S1 (en) 2022-08-29 2025-06-24 Applied Materials, Inc. Gas mixer
CN120824211A (zh) * 2024-04-09 2025-10-21 中微半导体设备(广州)有限公司 半导体处理设备及其工作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6024044A (en) * 1997-10-09 2000-02-15 Applied Komatsu Technology, Inc. Dual frequency excitation of plasma for film deposition
US6857387B1 (en) * 2000-05-03 2005-02-22 Applied Materials, Inc. Multiple frequency plasma chamber with grounding capacitor at cathode
CN1752281A (zh) * 2004-09-21 2006-03-29 应用材料股份有限公司 制程处理室中阴极的射频接地
CN1826679A (zh) * 2003-06-12 2006-08-30 应用材料公司 用于大面积衬底等离子体反应器的rf电流回路

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US602404A (en) * 1898-04-12 John mueller
JPH08306670A (ja) 1995-05-09 1996-11-22 Sony Corp プラズマアッシング装置
JPH1079350A (ja) * 1996-09-04 1998-03-24 Kokusai Electric Co Ltd プラズマ処理装置
US6358376B1 (en) 2000-07-10 2002-03-19 Applied Materials, Inc. Biased shield in a magnetron sputter reactor
WO2004040629A1 (ja) * 2002-10-29 2004-05-13 Mitsubishi Heavy Industries, Ltd. プラズマ化学蒸着装置における高周波プラズマの大面積均一化方法及び装置
US7354288B2 (en) * 2005-06-03 2008-04-08 Applied Materials, Inc. Substrate support with clamping electrical connector
US20070221128A1 (en) * 2006-03-23 2007-09-27 Soo Young Choi Method and apparatus for improving uniformity of large-area substrates
US8004293B2 (en) * 2006-11-20 2011-08-23 Applied Materials, Inc. Plasma processing chamber with ground member integrity indicator and method for using the same
US8381677B2 (en) * 2006-12-20 2013-02-26 Applied Materials, Inc. Prevention of film deposition on PECVD process chamber wall
US8076247B2 (en) * 2007-01-30 2011-12-13 Applied Materials, Inc. Plasma process uniformity across a wafer by controlling RF phase between opposing electrodes
KR101374583B1 (ko) * 2007-03-01 2014-03-17 어플라이드 머티어리얼스, 인코포레이티드 Ｒｆ 셔터
US7972470B2 (en) * 2007-05-03 2011-07-05 Applied Materials, Inc. Asymmetric grounding of rectangular susceptor
US7964430B2 (en) * 2007-05-23 2011-06-21 Applied Materials, Inc. Silicon layer on a laser transparent conductive oxide layer suitable for use in solar cell applications
US20080289686A1 (en) * 2007-05-23 2008-11-27 Tae Kyung Won Method and apparatus for depositing a silicon layer on a transmitting conductive oxide layer suitable for use in solar cell applications
US20080302303A1 (en) * 2007-06-07 2008-12-11 Applied Materials, Inc. Methods and apparatus for depositing a uniform silicon film with flow gradient designs
US8142606B2 (en) * 2007-06-07 2012-03-27 Applied Materials, Inc. Apparatus for depositing a uniform silicon film and methods for manufacturing the same
US20090107955A1 (en) * 2007-10-26 2009-04-30 Tiner Robin L Offset liner for chamber evacuation
CN101978473B (zh) * 2008-03-20 2015-11-25 应用材料公司 具有滚轧成型表面的基座和制造所述基座的方法
WO2010042860A2 (en) * 2008-10-09 2010-04-15 Applied Materials, Inc. Rf return path for large plasma processing chamber
CN102308675B (zh) * 2009-02-04 2016-01-13 应用材料公司 用于等离子体工艺的接地回流路径
WO2013078434A1 (en) * 2011-11-24 2013-05-30 Lam Research Corporation Plasma processing chamber with flexible symmetric rf return strap

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6024044A (en) * 1997-10-09 2000-02-15 Applied Komatsu Technology, Inc. Dual frequency excitation of plasma for film deposition
US6857387B1 (en) * 2000-05-03 2005-02-22 Applied Materials, Inc. Multiple frequency plasma chamber with grounding capacitor at cathode
CN1826679A (zh) * 2003-06-12 2006-08-30 应用材料公司 用于大面积衬底等离子体反应器的rf电流回路
CN1752281A (zh) * 2004-09-21 2006-03-29 应用材料股份有限公司 制程处理室中阴极的射频接地

Also Published As

Publication number Publication date
CN101298670B (zh) 2012-02-01
US8877301B2 (en) 2014-11-04
JP2008274437A (ja) 2008-11-13
TWI377638B (en) 2012-11-21
JP5427367B2 (ja) 2014-02-26
US7972470B2 (en) 2011-07-05
US20110236599A1 (en) 2011-09-29
KR101011407B1 (ko) 2011-01-28
TW200910497A (en) 2009-03-01
US20080274297A1 (en) 2008-11-06
CN101298670A (zh) 2008-11-05
KR20100090675A (ko) 2010-08-16
KR101274659B1 (ko) 2013-06-17
TWI376763B (en) 2012-11-11
CN101906621A (zh) 2010-12-08
KR20080097957A (ko) 2008-11-06
TW201042724A (en) 2010-12-01

Similar Documents

Publication Publication Date Title
CN101906621B (zh) 矩形基座的不对称接地
US8883269B2 (en) Thin film deposition using microwave plasma
US10373809B2 (en) Grooved backing plate for standing wave compensation
US20090197015A1 (en) Method and apparatus for controlling plasma uniformity
US8381677B2 (en) Prevention of film deposition on PECVD process chamber wall
US20060228496A1 (en) Plasma uniformity control by gas diffuser curvature
TWI840341B (zh) 用於基板支撐件的處理套組
US20100189921A1 (en) Plasma generating method, plasma generating apparatus, and plasma processing apparatus
US20080268173A1 (en) Pecvd process chamber backing plate reinforcement
CN101018886A (zh) 通过气体分散器的等离子体均匀度控制
KR20240107361A (ko) 고밀도 플라즈마 강화 프로세스 챔버
TW202312221A (zh) 混合電漿源陣列
TWI770144B (zh) 電漿處理裝置
TWI890674B (zh) 接地帶組件
EP1789605A2 (en) Plasma uniformity control by gas diffuser curvature
CN101855707B (zh) 等离子处理装置
WO2008079742A2 (en) Prevention of film deposition on pecvd process chamber wall
JP2001003174A (ja) 薄膜の形成方法及び誘導結合型プラズマｃｖｄ装置
CN103871819A (zh) 用于高均匀性hjt形成的大尺寸腔室
KR20250060290A (ko) 고밀도 플라즈마 강화 처리 챔버를 위한 대칭 안테나 어레이들
TW202427537A (zh) 用於基板支撐件的處理套組

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C53 Correction of patent of invention or patent application
CB02 Change of applicant information

Address after: American California

Applicant after: Applied Materials Inc.

Address before: American California

Applicant before: Applied Materials Inc.

C14 Grant of patent or utility model
GR01 Patent grant