KR20080097957A - 직사각형 서셉터의 비대칭 접지 - Google Patents
직사각형 서셉터의 비대칭 접지 Download PDFInfo
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- KR20080097957A KR20080097957A KR1020080041957A KR20080041957A KR20080097957A KR 20080097957 A KR20080097957 A KR 20080097957A KR 1020080041957 A KR1020080041957 A KR 1020080041957A KR 20080041957 A KR20080041957 A KR 20080041957A KR 20080097957 A KR20080097957 A KR 20080097957A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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Abstract
Description
Claims (15)
- 플라즈마 처리 챔버로서,측벽 및 후방벽을 포함하는 전기적으로 접지된 챔버;상기 챔버 내의 제 1 전극;상기 제 1 전극에 연결되고 13MHz 이상의 주파수에서 작동하는 RF 전력 소스;상기 제 1 전극에 대향하고(opposed to the first electrode) 처리되는 직사각형 기판에 병치되도록(juxtaposed) 구성된, 상기 챔버 내의 제 2 전극; 및다수의 전기적 스트랩(electrical straps)으로서, 상기 제 2 전극의 주변부를 상기 챔버에 연결시키고 상기 주변부 주위로 바디에 대해 비대칭 접지 컨덕턴스(asymmetric grounding conductance)를 만드는, 다수의 전기적 스트랩을 포함하는,플라즈마 처리 챔버.
- 제 1 항에 있어서,상기 제 2 전극을 상기 제 1 전극으로부터 멀리 그리고 이를 향해 이동시키도록 상기 제 2 전극에 연결된 이동 메커니즘을 추가로 포함하는,플라즈마 처리 챔버.
- 제 2 항에 있어서,상기 전기적 스트랩이 유연하고(flexible) 상기 제 2 전극의 이동에 응하여 굽어지는,플라즈마 처리 챔버.
- 제 1 항에 있어서,상기 제 2 전극의 주변부에 연결된 상기 전기 스트랩이 다양한 형태를 갖는,플라즈마 처리 챔버.
- 제 1 항에 있어서,상기 제 2 전극이 직사각형이고 1m 이상의 측부를 갖는,플라즈마 처리 챔버.
- 제 1 항에 있어서,상기 제 1 전극이 가스 소스에 연결 가능한 다수의 관통하는 가스 분배 구멍 을 포함하는,플라즈마 처리 챔버.
- 플라즈마 처리 챔버로서,측벽 및 후방벽을 포함하는 챔버;상기 챔버 내의 제 1 전극;상기 제 1 전극에 대향하고 처리되는 기판에 대해 병치되도록 구성된, 상기 챔버 내의 제 2 전극;예정된 전위에서 상기 제 2 전극의 주변부를 상기 챔버로 연결시키는, 다양한 형태의 다수의 전기적 스트랩; 및상기 제 2 전극을 상기 제 1 전극으로부터 멀리 그리고 이를 향해 이동시키도록 상기 제 2 전극에 연결된 이동 메커니즘을 포함하고,상기 전기적 스트랩이 유연하고 상기 제 2 전극의 이동에 응하여 굽어지는,플라즈마 처리 챔버.
- 제 7 항에 있어서,상기 전기적 스트랩이 상기 제 2 전극의 주변부 주위로 균등하게 분포되는,플라즈마 처리 챔버.
- 제 7 항에 있어서,상기 다양한 형태가 상기 전기적 스트랩의 다양한 폭을 포함하는,플라즈마 처리 챔버.
- 플라즈마 강화 CVD 챔버로서,전기적으로 접지된 벽을 포함하는 진공 챔버;샤워헤드 전극으로서, 상기 진공 챔버에 배치되고 다수의 관통하는 가스 분배 홀을 갖는 샤워헤드 전극;13MHz 이상의 주파수에서 작동하고 상기 샤워헤드 전극에 연결된 RF 전력 소스;처리되는 직사각형 패널에 병치되도록 구성되고 상기 챔버에 배치된 직사각형 서셉터;상기 서셉터를 상기 샤워헤드 전극으로부터 멀리 그리고 이를 향해 이동시키기 위한 이동 메커니즘; 및상기 전기적으로 접지된 벽 및 상기 서셉터의 주변부 사이에 연결되고, 상기 주변부 주위로 변하는 상기 벽 및 상기 서셉터 사이의 비대칭 컨덕턴스를 만드는, 다수의 유연한 접지 스트랩을 포함하는,플라즈마 강화 CVD 챔버.
- 제 10 항에 있어서,상기 다수의 스트랩 중 서로 다른 스트랩이 서로 다른 형태로 형성되는,플라즈마 강화 CVD 챔버.
- 제 10 항에 있어서,상기 접지된 벽이 상기 샤워헤드와 대향하는 상기 서셉터의 측부 상의 상기 진공 챔버의 후방벽인,플라즈마 강화 CVD 챔버.
- 플라즈마 강화 CVD 처리로서,플라즈마 챔버를 제공하는 단계;상기 접지된 벽 및 상기 서셉터의 주변부 사이에서 다수의 전기적 스트랩을 연결시키고, 이에 의해 상기 주변부 주위로 변하는 비대칭 컨덕턴스를 만드는 단계;상기 전기적 스트랩이 굽어지도록 상기 샤워헤드 전극으로부터 멀리 그리고 이를 향해 상기 서셉터를 이동시키는 단계;화학 기상 증착을 위한 전구체 가스를 상기 샤워헤드 전극을 통해 상기 진공 챔버로 넣는 단계; 및RF 전력 소스로부터의 RF 전력으로 상기 전구체 가스를 플라즈마로 여기시키고, 이에 의해 상기 전구체 가스로부터의 물질을 상기 패널 상에 화학적으로 기상 증착시키는 단계를 포함하고,상기 플라즈마 챔버가,전기적으로 접지된 벽을 포함하는 진공 챔버;샤워헤드 전극으로서, 상기 진공 챔버에 배치되고 다수의 관통하는 가스 분배 홀을 갖는, 샤워헤드 전극;상기 샤워헤드 전극에 연결된 상기 RF 전력 소스; 및처리되는 직사각형 패널에 대해 병치하도록 구성되고 상기 챔버에 배치된 직사각형 서셉터를 포함하는,플라즈마 강화 CVD 처리.
- 제 13 항에 있어서,상기 다수의 스트랩 중 서로 다른 스트랩이 서로 다른 형태를 갖는,플라즈마 강화 CVD 처리.
- 제 13 항에 있어서,상기 비대칭 컨덕턴스가 증착의 균일성을 향상시키는 변화를 갖도록 선택되는,플라즈마 강화 CVD 처리.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US91583307P | 2007-05-03 | 2007-05-03 | |
US60/915,833 | 2007-05-03 | ||
US11/775,359 | 2007-07-10 | ||
US11/775,359 US7972470B2 (en) | 2007-05-03 | 2007-07-10 | Asymmetric grounding of rectangular susceptor |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020100072406A Division KR101274659B1 (ko) | 2007-05-03 | 2010-07-27 | 직사각형 서셉터의 비대칭 접지 |
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KR20080097957A true KR20080097957A (ko) | 2008-11-06 |
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KR1020100072406A KR101274659B1 (ko) | 2007-05-03 | 2010-07-27 | 직사각형 서셉터의 비대칭 접지 |
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JP (1) | JP5427367B2 (ko) |
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KR101127757B1 (ko) * | 2009-12-02 | 2012-03-23 | 주식회사 테스 | 서셉터 접지유닛, 이를 이용하여 서셉터 접지의 가변방법 및 이를 갖는 공정챔버 |
KR20180131643A (ko) * | 2016-06-21 | 2018-12-10 | 어플라이드 머티어리얼스, 인코포레이티드 | Rf 리턴 스트랩 차폐 커버 |
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KR101274659B1 (ko) | 2013-06-17 |
US8877301B2 (en) | 2014-11-04 |
CN101906621A (zh) | 2010-12-08 |
TWI376763B (en) | 2012-11-11 |
CN101298670B (zh) | 2012-02-01 |
JP2008274437A (ja) | 2008-11-13 |
TWI377638B (en) | 2012-11-21 |
KR101011407B1 (ko) | 2011-01-28 |
TW200910497A (en) | 2009-03-01 |
US20110236599A1 (en) | 2011-09-29 |
TW201042724A (en) | 2010-12-01 |
KR20100090675A (ko) | 2010-08-16 |
US20080274297A1 (en) | 2008-11-06 |
CN101298670A (zh) | 2008-11-05 |
JP5427367B2 (ja) | 2014-02-26 |
CN101906621B (zh) | 2012-10-31 |
US7972470B2 (en) | 2011-07-05 |
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