TWI373796B - - Google Patents

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Publication number
TWI373796B
TWI373796B TW097103498A TW97103498A TWI373796B TW I373796 B TWI373796 B TW I373796B TW 097103498 A TW097103498 A TW 097103498A TW 97103498 A TW97103498 A TW 97103498A TW I373796 B TWI373796 B TW I373796B
Authority
TW
Taiwan
Prior art keywords
hydrogen peroxide
sulfuric acid
substrate
mixing
substrate cleaning
Prior art date
Application number
TW097103498A
Other languages
English (en)
Chinese (zh)
Other versions
TW200845159A (en
Inventor
Koukichi Hiroshiro
Takayuki Toshima
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200845159A publication Critical patent/TW200845159A/zh
Application granted granted Critical
Publication of TWI373796B publication Critical patent/TWI373796B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning By Liquid Or Steam (AREA)
TW097103498A 2007-01-31 2008-01-30 Substrate cleaning apparatus and method TW200845159A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007022004A JP4863897B2 (ja) 2007-01-31 2007-01-31 基板洗浄装置、基板洗浄方法及び基板洗浄プログラム

Publications (2)

Publication Number Publication Date
TW200845159A TW200845159A (en) 2008-11-16
TWI373796B true TWI373796B (enExample) 2012-10-01

Family

ID=39341364

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097103498A TW200845159A (en) 2007-01-31 2008-01-30 Substrate cleaning apparatus and method

Country Status (6)

Country Link
US (1) US20080178910A1 (enExample)
EP (1) EP1952899B1 (enExample)
JP (1) JP4863897B2 (enExample)
KR (1) KR20080071945A (enExample)
DE (1) DE602008000514D1 (enExample)
TW (1) TW200845159A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4762822B2 (ja) 2006-08-03 2011-08-31 東京エレクトロン株式会社 薬液混合方法および薬液混合装置
JP2011129651A (ja) * 2009-12-16 2011-06-30 Renesas Electronics Corp 半導体装置の製造方法、基板処理装置、および、プログラム
CN102834182B (zh) * 2010-04-27 2016-11-02 泰尔Fsi公司 在邻近基板表面处的受控流体混合情况下的微电子基板的湿处理
JP5474840B2 (ja) * 2011-01-25 2014-04-16 東京エレクトロン株式会社 液処理装置および液処理方法
JP6016093B2 (ja) * 2012-09-12 2016-10-26 株式会社Ｓｃｒｅｅｎホールディングス 薬液供給装置、基板処理システム、および基板処理方法
CN108431929B (zh) 2015-11-14 2023-03-31 东京毅力科创株式会社 使用稀释的tmah处理微电子基底的方法
JP6779701B2 (ja) * 2016-08-05 2020-11-04 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理方法を実行させるプログラムが記録された記憶媒体
CN110520965B (zh) * 2017-04-06 2023-06-02 东京毅力科创株式会社 供液装置和供液方法
JP7403320B2 (ja) 2020-01-07 2023-12-22 東京エレクトロン株式会社 基板処理装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2576050A (en) * 1948-02-24 1951-11-20 Merle A Soden Milk temperature conditioning vessel
US2960382A (en) * 1955-05-13 1960-11-15 Armstrong Cork Co Method of bleaching linoleum using hydrogen peroxide bleach
US3640916A (en) * 1968-12-16 1972-02-08 Johnson & Son Inc S C Foam producing compositions
GB8701759D0 (en) * 1987-01-27 1987-03-04 Laporte Industries Ltd Processing of semi-conductor materials
DE3782044T2 (de) * 1987-04-10 1993-03-25 Chugoku Kayaku Mischapparat.
US5395649A (en) * 1992-02-04 1995-03-07 Sony Corporation Spin coating apparatus for film formation over substrate
JP3277404B2 (ja) * 1993-03-31 2002-04-22 ソニー株式会社 基板洗浄方法及び基板洗浄装置
US5950645A (en) 1993-10-20 1999-09-14 Verteq, Inc. Semiconductor wafer cleaning system
JPH07161674A (ja) * 1993-12-08 1995-06-23 Mitsubishi Electric Corp 半導体ウエハの処理装置およびその処理方法
JPH08316190A (ja) * 1995-05-18 1996-11-29 Dainippon Screen Mfg Co Ltd 基板処理装置
JPH0969509A (ja) * 1995-09-01 1997-03-11 Matsushita Electron Corp 半導体ウェーハの洗浄・エッチング・乾燥装置及びその使用方法
JP3164048B2 (ja) * 1997-12-16 2001-05-08 日本電気株式会社 半導体製造装置
EP1134020B1 (en) * 1998-10-26 2008-08-20 Matrix Global Technology Ltd. Mixing element body for stationary type mixer
JP3212958B2 (ja) * 1998-12-11 2001-09-25 九州日本電気株式会社 薬液濃度制御装置
US6494219B1 (en) * 2000-03-22 2002-12-17 Applied Materials, Inc. Apparatus with etchant mixing assembly for removal of unwanted electroplating deposits
US6299697B1 (en) * 1999-08-25 2001-10-09 Shibaura Mechatronics Corporation Method and apparatus for processing substrate
KR100740311B1 (ko) * 2000-07-14 2007-07-26 에이비 이니티오 엘씨 산화제 합성방법 및 그의 응용
US20040159335A1 (en) * 2002-05-17 2004-08-19 P.C.T. Systems, Inc. Method and apparatus for removing organic layers
US20040154641A1 (en) 2002-05-17 2004-08-12 P.C.T. Systems, Inc. Substrate processing apparatus and method
US20040000322A1 (en) * 2002-07-01 2004-01-01 Applied Materials, Inc. Point-of-use mixing with H2SO4 and H2O2 on top of a horizontally spinning wafer
JP4494840B2 (ja) * 2003-06-27 2010-06-30 大日本スクリーン製造株式会社 異物除去装置、基板処理装置および基板処理方法
KR100734669B1 (ko) 2003-08-08 2007-07-02 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법 및 그 장치
JP2005183937A (ja) * 2003-11-25 2005-07-07 Nec Electronics Corp 半導体装置の製造方法およびレジスト除去用洗浄装置
US7632756B2 (en) * 2004-08-26 2009-12-15 Applied Materials, Inc. Semiconductor processing using energized hydrogen gas and in combination with wet cleaning
JP2006108304A (ja) * 2004-10-04 2006-04-20 Nec Electronics Corp 基板処理装置
US20060254616A1 (en) * 2005-05-11 2006-11-16 Brian Brown Temperature control of a substrate during wet processes
US7432177B2 (en) * 2005-06-15 2008-10-07 Applied Materials, Inc. Post-ion implant cleaning for silicon on insulator substrate preparation
JP4672487B2 (ja) * 2005-08-26 2011-04-20 大日本スクリーン製造株式会社 レジスト除去方法およびレジスト除去装置
JP4986566B2 (ja) * 2005-10-14 2012-07-25 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
US20080060682A1 (en) * 2006-09-13 2008-03-13 Taiwan Semiconductor Manufacturing Co., Ltd. High temperature spm treatment for photoresist stripping

Also Published As

Publication number Publication date
JP4863897B2 (ja) 2012-01-25
EP1952899B1 (en) 2010-01-13
EP1952899A1 (en) 2008-08-06
TW200845159A (en) 2008-11-16
US20080178910A1 (en) 2008-07-31
KR20080071945A (ko) 2008-08-05
JP2008183550A (ja) 2008-08-14
DE602008000514D1 (de) 2010-03-04

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees