TWI370844B - Polishing composition - Google Patents

Polishing composition

Info

Publication number
TWI370844B
TWI370844B TW094142196A TW94142196A TWI370844B TW I370844 B TWI370844 B TW I370844B TW 094142196 A TW094142196 A TW 094142196A TW 94142196 A TW94142196 A TW 94142196A TW I370844 B TWI370844 B TW I370844B
Authority
TW
Taiwan
Prior art keywords
polishing composition
polishing
composition
Prior art date
Application number
TW094142196A
Other languages
English (en)
Chinese (zh)
Other versions
TW200621967A (en
Inventor
Shigeo Fujii
Kenichi Suenaga
Original Assignee
Kao Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kao Corp filed Critical Kao Corp
Publication of TW200621967A publication Critical patent/TW200621967A/zh
Application granted granted Critical
Publication of TWI370844B publication Critical patent/TWI370844B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
TW094142196A 2004-11-30 2005-11-30 Polishing composition TWI370844B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004347212A JP4836441B2 (ja) 2004-11-30 2004-11-30 研磨液組成物

Publications (2)

Publication Number Publication Date
TW200621967A TW200621967A (en) 2006-07-01
TWI370844B true TWI370844B (en) 2012-08-21

Family

ID=35580228

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094142196A TWI370844B (en) 2004-11-30 2005-11-30 Polishing composition

Country Status (6)

Country Link
US (2) US20060112647A1 (ja)
JP (1) JP4836441B2 (ja)
CN (1) CN1781971B (ja)
GB (1) GB2421244B (ja)
MY (1) MY144163A (ja)
TW (1) TWI370844B (ja)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4577296B2 (ja) * 2006-10-27 2010-11-10 富士電機デバイステクノロジー株式会社 磁気記録媒体用非金属基板の再生方法
JP2009013046A (ja) * 2007-06-05 2009-01-22 Asahi Glass Co Ltd ガラス基板表面を加工する方法
JP2008307676A (ja) * 2007-06-18 2008-12-25 Kao Corp ハードディスク基板用研磨液組成物
JP5063339B2 (ja) * 2007-12-28 2012-10-31 花王株式会社 ハードディスク基板用研磨液組成物、並びにこれを用いた研磨方法及びハードディスク基板の製造方法
JP5576634B2 (ja) * 2008-11-05 2014-08-20 山口精研工業株式会社 研磨剤組成物及び磁気ディスク基板の研磨方法
JP5657247B2 (ja) * 2009-12-25 2015-01-21 花王株式会社 研磨液組成物
JP5940278B2 (ja) * 2010-10-27 2016-06-29 花王株式会社 ガラスハードディスク基板の製造方法
JP5925454B2 (ja) 2010-12-16 2016-05-25 花王株式会社 磁気ディスク基板用研磨液組成物
JP5979872B2 (ja) * 2011-01-31 2016-08-31 花王株式会社 磁気ディスク基板の製造方法
CN103403109B (zh) * 2011-02-23 2015-12-23 大日精化工业株式会社 水性液态组合物、水性涂布液、功能性涂布膜、及复合材料
JP5933950B2 (ja) * 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅または銅合金用エッチング液
WO2014030208A1 (ja) 2012-08-21 2014-02-27 大日精化工業株式会社 水性液状組成物、水性塗工液、機能性塗工膜、及び複合材料
KR20150065757A (ko) * 2012-10-03 2015-06-15 가부시키가이샤 후지미인코퍼레이티드 연마 방법 및 합금 재료의 제조 방법
JP6286566B2 (ja) * 2014-09-17 2018-02-28 Hoya株式会社 磁気ディスク用基板の製造方法
JP6659449B2 (ja) * 2016-05-09 2020-03-04 山口精研工業株式会社 無電解ニッケル−リンめっきされたアルミニウム磁気ディスク基板用研磨剤組成物
JP6734146B2 (ja) * 2016-08-23 2020-08-05 山口精研工業株式会社 磁気ディスク基板用研磨剤組成物
CN108148507B (zh) * 2017-12-18 2020-12-04 清华大学 一种用于熔石英的抛光组合物

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639394A (en) * 1985-04-01 1987-01-27 Ppg Industries, Inc. Non-aqueous dispersions prepared with styrene polymer dispersion stabilizers
US5209816A (en) * 1992-06-04 1993-05-11 Micron Technology, Inc. Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing
US5350788A (en) * 1993-03-11 1994-09-27 E. I. Du Pont De Nemours And Company Method for reducing odors in recycled plastics and compositions relating thereto
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5362784A (en) * 1993-05-28 1994-11-08 E. I. Du Pont De Nemours And Company Aldehyde scavenging compositions and methods relating thereto
DE60034474T2 (de) * 1999-08-13 2008-01-10 Cabot Microelectronics Corp., Aurora Poliersystem und verfahren zu seiner verwendung
US6855266B1 (en) * 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
JP4264781B2 (ja) * 1999-09-20 2009-05-20 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
JP3575750B2 (ja) * 2000-05-12 2004-10-13 花王株式会社 研磨液組成物
JP3768401B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP2002164307A (ja) * 2000-11-24 2002-06-07 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US7323416B2 (en) * 2001-03-14 2008-01-29 Applied Materials, Inc. Method and composition for polishing a substrate
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US6755721B2 (en) * 2002-02-22 2004-06-29 Saint-Gobain Ceramics And Plastics, Inc. Chemical mechanical polishing of nickel phosphorous alloys
JP2003347247A (ja) * 2002-05-28 2003-12-05 Hitachi Chem Co Ltd 半導体絶縁膜用ｃｍｐ研磨剤及び基板の研磨方法
JP3875155B2 (ja) * 2002-07-31 2007-01-31 花王株式会社 ロールオフ低減剤
GB2393186B (en) * 2002-07-31 2006-02-22 Kao Corp Polishing composition
JP4446371B2 (ja) * 2002-08-30 2010-04-07 花王株式会社 研磨液組成物
GB2393447B (en) * 2002-08-07 2006-04-19 Kao Corp Polishing composition
JP2004193495A (ja) * 2002-12-13 2004-07-08 Toshiba Corp 化学的機械的研磨用スラリーおよびこれを用いた半導体装置の製造方法
JP2004311484A (ja) * 2003-04-02 2004-11-04 Sumitomo Bakelite Co Ltd 研磨用組成物
TW200517478A (en) * 2003-05-09 2005-06-01 Sanyo Chemical Ind Ltd Polishing liquid for CMP process and polishing method
JP2004335978A (ja) * 2003-05-12 2004-11-25 Jsr Corp 化学機械研磨方法
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers

Also Published As

Publication number Publication date
JP2006150534A (ja) 2006-06-15
JP4836441B2 (ja) 2011-12-14
US20060112647A1 (en) 2006-06-01
GB2421244B (en) 2009-03-18
MY144163A (en) 2011-08-15
GB0523438D0 (en) 2005-12-28
TW200621967A (en) 2006-07-01
US20080280538A1 (en) 2008-11-13
CN1781971A (zh) 2006-06-07
CN1781971B (zh) 2010-05-05
GB2421244A (en) 2006-06-21

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees