TWI364814B - Edge removal of silicon-on-insulator transfer wafer - Google Patents

Edge removal of silicon-on-insulator transfer wafer Download PDF

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Publication number
TWI364814B
TWI364814B TW094141169A TW94141169A TWI364814B TW I364814 B TWI364814 B TW I364814B TW 094141169 A TW094141169 A TW 094141169A TW 94141169 A TW94141169 A TW 94141169A TW I364814 B TWI364814 B TW I364814B
Authority
TW
Taiwan
Prior art keywords
wafer
transfer
circumferential lip
grinding
transfer wafer
Prior art date
Application number
TW094141169A
Other languages
English (en)
Chinese (zh)
Other versions
TW200629469A (en
Inventor
Raymond John Donohoe
Krishna Vepa
Paul V Miller
Ronald Rayandayan
Hong Wang
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200629469A publication Critical patent/TW200629469A/zh
Application granted granted Critical
Publication of TWI364814B publication Critical patent/TWI364814B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/16—Preparing bulk and homogeneous wafers by reclaiming or re-processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/974—Substrate surface preparation

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
TW094141169A 2004-11-26 2005-11-23 Edge removal of silicon-on-insulator transfer wafer TWI364814B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/998,289 US7402520B2 (en) 2004-11-26 2004-11-26 Edge removal of silicon-on-insulator transfer wafer

Publications (2)

Publication Number Publication Date
TW200629469A TW200629469A (en) 2006-08-16
TWI364814B true TWI364814B (en) 2012-05-21

Family

ID=36113834

Family Applications (2)

Application Number Title Priority Date Filing Date
TW094141169A TWI364814B (en) 2004-11-26 2005-11-23 Edge removal of silicon-on-insulator transfer wafer
TW097114902A TWI333259B (en) 2004-11-26 2005-11-23 Edge removal of silicon-on-insulator transfer wafer

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW097114902A TWI333259B (en) 2004-11-26 2005-11-23 Edge removal of silicon-on-insulator transfer wafer

Country Status (4)

Country Link
US (3) US7402520B2 (https=)
EP (2) EP1662560B1 (https=)
JP (2) JP5455282B2 (https=)
TW (2) TWI364814B (https=)

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Also Published As

Publication number Publication date
US20080138987A1 (en) 2008-06-12
JP2006179887A (ja) 2006-07-06
EP1662560A3 (en) 2009-07-22
TWI333259B (en) 2010-11-11
EP1662560B1 (en) 2019-06-05
TW200629469A (en) 2006-08-16
EP2048701A2 (en) 2009-04-15
US7951718B2 (en) 2011-05-31
EP1662560A2 (en) 2006-05-31
JP2009283964A (ja) 2009-12-03
EP2048701A3 (en) 2009-04-29
TW200915477A (en) 2009-04-01
US7402520B2 (en) 2008-07-22
JP5455282B2 (ja) 2014-03-26
US20090061545A1 (en) 2009-03-05
US7749908B2 (en) 2010-07-06
US20060115986A1 (en) 2006-06-01

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