TWI364626B - Resin composition comprising catalyst precursor for electroless plating to form electromagnetic wave shielding layer, methods for forming metal patterns using the resin composition and metal patterns formed by the methods - Google Patents
Resin composition comprising catalyst precursor for electroless plating to form electromagnetic wave shielding layer, methods for forming metal patterns using the resin composition and metal patterns formed by the methods Download PDFInfo
- Publication number
- TWI364626B TWI364626B TW096113065A TW96113065A TWI364626B TW I364626 B TWI364626 B TW I364626B TW 096113065 A TW096113065 A TW 096113065A TW 96113065 A TW96113065 A TW 96113065A TW I364626 B TWI364626 B TW I364626B
- Authority
- TW
- Taiwan
- Prior art keywords
- silver
- complex
- resin composition
- acid
- film layer
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/02—Homopolymers or copolymers of acids; Metal or ammonium salts thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/04—Acids; Metal salts or ammonium salts thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/02—Acids; Metal salts or ammonium salts thereof, e.g. maleic acid or itaconic acid
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/10—Esters
- C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
- C08L33/10—Homopolymers or copolymers of methacrylic acid esters
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/54—Electroplating of non-metallic surfaces
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/54—Electroplating of non-metallic surfaces
- C25D5/56—Electroplating of non-metallic surfaces of plastics
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/0285—Silver salts, e.g. a latent silver salt image
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Electrochemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemically Coating (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Materials For Photolithography (AREA)
- Polymerisation Methods In General (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20060033757 | 2006-04-13 | ||
KR1020070035607A KR100823718B1 (ko) | 2006-04-13 | 2007-04-11 | 전자파 차폐층 제조시 무전해도금에 대한 촉매 전구체수지조성물, 이를 이용한 금속패턴 형성방법 및 이에 따라제조된 금속패턴 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200801799A TW200801799A (en) | 2008-01-01 |
TWI364626B true TWI364626B (en) | 2012-05-21 |
Family
ID=38816954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096113065A TWI364626B (en) | 2006-04-13 | 2007-04-13 | Resin composition comprising catalyst precursor for electroless plating to form electromagnetic wave shielding layer, methods for forming metal patterns using the resin composition and metal patterns formed by the methods |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5234290B2 (ja) |
KR (1) | KR100823718B1 (ja) |
CN (1) | CN101421311B (ja) |
TW (1) | TWI364626B (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101009733B1 (ko) * | 2007-05-15 | 2011-01-20 | 주식회사 엘지화학 | 전자파 차폐층 제조시 무전해도금에 대한 촉매 전구체수지조성물, 이를 이용한 금속패턴 형성방법 및 이에 따라제조된 금속패턴 |
KR100964962B1 (ko) * | 2007-07-03 | 2010-06-21 | 주식회사 엘지화학 | 그라비아 인쇄법을 이용한 촉매 패턴 형성에 사용되는 촉매전구체 수지 조성물, 이를 이용한 금속패턴 형성방법 및이에 따라 형성된 금속패턴 |
KR100958289B1 (ko) * | 2007-07-09 | 2010-05-19 | 주식회사 엘지화학 | 전자파 차폐용 촉매 전구체 수지 조성물, 이를 이용한 금속패턴 형성방법 및 이에 따라 형성된 금속패턴 |
KR20110071805A (ko) * | 2009-12-21 | 2011-06-29 | 삼성전기주식회사 | 금속 박막 형성용 유기 금속 착물, 이를 포함하는 잉크 및 이를 이용한 금속 박막의 형성방법 |
US9176377B2 (en) | 2010-06-01 | 2015-11-03 | Inpria Corporation | Patterned inorganic layers, radiation based patterning compositions and corresponding methods |
KR101114256B1 (ko) * | 2010-07-14 | 2012-03-05 | 한국과학기술원 | 패턴 제조 방법 |
CN106519740B (zh) * | 2012-10-26 | 2019-01-11 | 比亚迪股份有限公司 | 白色涂料组合物、绝缘基材表面选择性金属化的方法及复合制品 |
US9310684B2 (en) | 2013-08-22 | 2016-04-12 | Inpria Corporation | Organometallic solution based high resolution patterning compositions |
TW201543977A (zh) * | 2014-05-07 | 2015-11-16 | Daxin Materials Corp | 形成含銀之導電圖案層的方法 |
US11383543B2 (en) * | 2017-03-07 | 2022-07-12 | Toray Industries, Inc. | Method for producing printed matter and printing machine |
CN110922429B (zh) * | 2018-09-20 | 2023-11-03 | 北京夏禾科技有限公司 | 含有辅助配体的有机发光材料 |
EP3648161A1 (en) * | 2018-11-05 | 2020-05-06 | Heraeus Deutschland GmbH & Co KG | Method of manufacturing an electromagnetic interference shielding layer |
CN109881497B (zh) * | 2019-02-25 | 2021-12-03 | 普宁市鸿骏纺织有限公司 | 一种防水面料及其制备方法 |
CN110010337B (zh) * | 2019-05-07 | 2021-08-31 | 深圳市金泰德五金电子有限公司 | 一种高效的扁平状漆包线去漆皮方法 |
CN111234099B (zh) * | 2020-03-12 | 2021-09-03 | 扬州大学 | 一种高性能防辐射含铅有机玻璃及其制备方法 |
KR102642598B1 (ko) * | 2022-03-30 | 2024-03-04 | 재단법인대구경북과학기술원 | 투명 전극 및 광열층의 동시 패터닝 방법 및 이를 통하여 제조된 투명 전극 구조체 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0823691B2 (ja) * | 1989-02-24 | 1996-03-06 | 日本合成化学工業株式会社 | 感光性樹脂組成物 |
JPH04103771A (ja) | 1990-08-23 | 1992-04-06 | Sankei Giken Kogyo Kk | 求電子的な極性を有する材料の無電解めっき方法 |
JPH10163673A (ja) * | 1996-10-01 | 1998-06-19 | Nisshinbo Ind Inc | 電磁波シールドパネル及びその製造方法 |
DE69807424T2 (de) * | 1997-12-08 | 2003-04-03 | Fuji Photo Film Co Ltd | Thermographische Aufzeichnungsmaterialien |
JP3861462B2 (ja) * | 1998-05-28 | 2006-12-20 | 三菱化学株式会社 | カラーフィルター用光重合性組成物 |
KR100878236B1 (ko) * | 2002-06-12 | 2009-01-13 | 삼성전자주식회사 | 금속 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터기판의 제조 방법 |
CN1238420C (zh) * | 2002-10-22 | 2006-01-25 | 中国科学院化学研究所 | 一种酚醛树脂纳米复合材料的制法及由其制备的产品 |
JP4641719B2 (ja) * | 2002-12-27 | 2011-03-02 | 富士フイルム株式会社 | 透光性電磁波シールド膜の製造方法及び透光性電磁波シールド膜 |
KR100529371B1 (ko) * | 2003-07-29 | 2005-11-21 | 주식회사 엘지화학 | 촉매전구체 수지조성물 및 이를 이용한 투광성 전자파차폐재 제조방법 |
-
2007
- 2007-04-11 KR KR1020070035607A patent/KR100823718B1/ko active IP Right Grant
- 2007-04-12 CN CN2007800132352A patent/CN101421311B/zh active Active
- 2007-04-12 JP JP2009505299A patent/JP5234290B2/ja active Active
- 2007-04-13 TW TW096113065A patent/TWI364626B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW200801799A (en) | 2008-01-01 |
KR100823718B1 (ko) | 2008-04-21 |
CN101421311B (zh) | 2012-05-30 |
JP5234290B2 (ja) | 2013-07-10 |
KR20070101785A (ko) | 2007-10-17 |
CN101421311A (zh) | 2009-04-29 |
JP2009533521A (ja) | 2009-09-17 |
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