KR100823718B1 - 전자파 차폐층 제조시 무전해도금에 대한 촉매 전구체수지조성물, 이를 이용한 금속패턴 형성방법 및 이에 따라제조된 금속패턴 - Google Patents

전자파 차폐층 제조시 무전해도금에 대한 촉매 전구체수지조성물, 이를 이용한 금속패턴 형성방법 및 이에 따라제조된 금속패턴 Download PDF

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KR100823718B1
KR100823718B1 KR1020070035607A KR20070035607A KR100823718B1 KR 100823718 B1 KR100823718 B1 KR 100823718B1 KR 1020070035607 A KR1020070035607 A KR 1020070035607A KR 20070035607 A KR20070035607 A KR 20070035607A KR 100823718 B1 KR100823718 B1 KR 100823718B1
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South Korea
Prior art keywords
resin composition
catalyst
silver
catalyst precursor
complex
Prior art date
Application number
KR1020070035607A
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English (en)
Korean (ko)
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KR20070101785A (ko
Inventor
김민균
고민진
최범규
이상철
노정임
Original Assignee
주식회사 엘지화학
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Publication date
Application filed by 주식회사 엘지화학 filed Critical 주식회사 엘지화학
Priority to PCT/KR2007/001779 priority Critical patent/WO2007119966A1/en
Priority to JP2009505299A priority patent/JP5234290B2/ja
Priority to CN2007800132352A priority patent/CN101421311B/zh
Priority to TW096113065A priority patent/TWI364626B/zh
Priority to US11/785,080 priority patent/US7682774B2/en
Publication of KR20070101785A publication Critical patent/KR20070101785A/ko
Application granted granted Critical
Publication of KR100823718B1 publication Critical patent/KR100823718B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/02—Homopolymers or copolymers of acids; Metal or ammonium salts thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/04—Acids; Metal salts or ammonium salts thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/02—Acids; Metal salts or ammonium salts thereof, e.g. maleic acid or itaconic acid
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C08L33/10—Homopolymers or copolymers of methacrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/54—Electroplating of non-metallic surfaces
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/54—Electroplating of non-metallic surfaces
    • C25D5/56—Electroplating of non-metallic surfaces of plastics
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/0285—Silver salts, e.g. a latent silver salt image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
    • H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemically Coating (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Materials For Photolithography (AREA)
  • Polymerisation Methods In General (AREA)
  • Laminated Bodies (AREA)
KR1020070035607A 2006-04-13 2007-04-11 전자파 차폐층 제조시 무전해도금에 대한 촉매 전구체수지조성물, 이를 이용한 금속패턴 형성방법 및 이에 따라제조된 금속패턴 KR100823718B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
PCT/KR2007/001779 WO2007119966A1 (en) 2006-04-13 2007-04-12 Resin composition comprising catalyst precursor for electroless plating to form electromagnetic wave shielding layer, methods for forming metal patterns using the resin composition and metal patterns formed by the methods
JP2009505299A JP5234290B2 (ja) 2006-04-13 2007-04-12 電磁波遮蔽用触媒前駆体樹脂組成物、金属パターンの形成方法、金属パターン、電磁波遮蔽材
CN2007800132352A CN101421311B (zh) 2006-04-13 2007-04-12 用于化学镀以形成电磁波屏蔽层的含有催化剂前体的树脂组合物、使用该树脂组合物形成金属图案的方法以及通过该方法形成的金属图案
TW096113065A TWI364626B (en) 2006-04-13 2007-04-13 Resin composition comprising catalyst precursor for electroless plating to form electromagnetic wave shielding layer, methods for forming metal patterns using the resin composition and metal patterns formed by the methods
US11/785,080 US7682774B2 (en) 2006-04-13 2007-04-13 Resin composition comprising catalyst precursor for electroless plating to form electromagnetic wave shielding layer, methods for forming metal patterns using the resin composition and metal patterns formed by the methods

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20060033757 2006-04-13
KR1020060033757 2006-04-13

Publications (2)

Publication Number Publication Date
KR20070101785A KR20070101785A (ko) 2007-10-17
KR100823718B1 true KR100823718B1 (ko) 2008-04-21

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KR1020070035607A KR100823718B1 (ko) 2006-04-13 2007-04-11 전자파 차폐층 제조시 무전해도금에 대한 촉매 전구체수지조성물, 이를 이용한 금속패턴 형성방법 및 이에 따라제조된 금속패턴

Country Status (4)

Country Link
JP (1) JP5234290B2 (ja)
KR (1) KR100823718B1 (ja)
CN (1) CN101421311B (ja)
TW (1) TWI364626B (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101009733B1 (ko) * 2007-05-15 2011-01-20 주식회사 엘지화학 전자파 차폐층 제조시 무전해도금에 대한 촉매 전구체수지조성물, 이를 이용한 금속패턴 형성방법 및 이에 따라제조된 금속패턴
KR100964962B1 (ko) * 2007-07-03 2010-06-21 주식회사 엘지화학 그라비아 인쇄법을 이용한 촉매 패턴 형성에 사용되는 촉매전구체 수지 조성물, 이를 이용한 금속패턴 형성방법 및이에 따라 형성된 금속패턴
KR100958289B1 (ko) * 2007-07-09 2010-05-19 주식회사 엘지화학 전자파 차폐용 촉매 전구체 수지 조성물, 이를 이용한 금속패턴 형성방법 및 이에 따라 형성된 금속패턴
KR20110071805A (ko) * 2009-12-21 2011-06-29 삼성전기주식회사 금속 박막 형성용 유기 금속 착물, 이를 포함하는 잉크 및 이를 이용한 금속 박막의 형성방법
US9176377B2 (en) 2010-06-01 2015-11-03 Inpria Corporation Patterned inorganic layers, radiation based patterning compositions and corresponding methods
KR101114256B1 (ko) * 2010-07-14 2012-03-05 한국과학기술원 패턴 제조 방법
CN106519740B (zh) * 2012-10-26 2019-01-11 比亚迪股份有限公司 白色涂料组合物、绝缘基材表面选择性金属化的方法及复合制品
US9310684B2 (en) 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
TW201543977A (zh) * 2014-05-07 2015-11-16 Daxin Materials Corp 形成含銀之導電圖案層的方法
US11383543B2 (en) * 2017-03-07 2022-07-12 Toray Industries, Inc. Method for producing printed matter and printing machine
CN110922429B (zh) * 2018-09-20 2023-11-03 北京夏禾科技有限公司 含有辅助配体的有机发光材料
EP3648161A1 (en) * 2018-11-05 2020-05-06 Heraeus Deutschland GmbH & Co KG Method of manufacturing an electromagnetic interference shielding layer
CN109881497B (zh) * 2019-02-25 2021-12-03 普宁市鸿骏纺织有限公司 一种防水面料及其制备方法
CN110010337B (zh) * 2019-05-07 2021-08-31 深圳市金泰德五金电子有限公司 一种高效的扁平状漆包线去漆皮方法
CN111234099B (zh) * 2020-03-12 2021-09-03 扬州大学 一种高性能防辐射含铅有机玻璃及其制备方法
KR102642598B1 (ko) * 2022-03-30 2024-03-04 재단법인대구경북과학기술원 투명 전극 및 광열층의 동시 패터닝 방법 및 이를 통하여 제조된 투명 전극 구조체

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JPH02223954A (ja) * 1989-02-24 1990-09-06 Nippon Synthetic Chem Ind Co Ltd:The 感光性樹脂組成物
KR100221485B1 (ko) 1990-08-23 1999-09-15 하세가와 마세후이 친전자적 극성을 가진 재료의 무전해 도금 방법

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KR100878236B1 (ko) * 2002-06-12 2009-01-13 삼성전자주식회사 금속 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터기판의 제조 방법
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KR100529371B1 (ko) * 2003-07-29 2005-11-21 주식회사 엘지화학 촉매전구체 수지조성물 및 이를 이용한 투광성 전자파차폐재 제조방법

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Publication number Priority date Publication date Assignee Title
JPH02223954A (ja) * 1989-02-24 1990-09-06 Nippon Synthetic Chem Ind Co Ltd:The 感光性樹脂組成物
KR100221485B1 (ko) 1990-08-23 1999-09-15 하세가와 마세후이 친전자적 극성을 가진 재료의 무전해 도금 방법

Also Published As

Publication number Publication date
TW200801799A (en) 2008-01-01
CN101421311B (zh) 2012-05-30
JP5234290B2 (ja) 2013-07-10
KR20070101785A (ko) 2007-10-17
TWI364626B (en) 2012-05-21
CN101421311A (zh) 2009-04-29
JP2009533521A (ja) 2009-09-17

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