TWI348735B - Integrated method for removal of halogen residues from etched substrates by thermal process - Google Patents

Integrated method for removal of halogen residues from etched substrates by thermal process

Info

Publication number
TWI348735B
TWI348735B TW096140350A TW96140350A TWI348735B TW I348735 B TWI348735 B TW I348735B TW 096140350 A TW096140350 A TW 096140350A TW 96140350 A TW96140350 A TW 96140350A TW I348735 B TWI348735 B TW I348735B
Authority
TW
Taiwan
Prior art keywords
removal
thermal process
integrated method
etched substrates
halogen residues
Prior art date
Application number
TW096140350A
Other languages
English (en)
Chinese (zh)
Other versions
TW200837828A (en
Inventor
Naoshi Mark Kawaguchi
Kin Pong Lo
Brett Christian Hoogensen
Sandy M Wen
Steven H Kim
Kenneth J Bahng
Matthew Fenton Davis
Thorsten B Lill
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/553,132 external-priority patent/US7655571B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200837828A publication Critical patent/TW200837828A/zh
Application granted granted Critical
Publication of TWI348735B publication Critical patent/TWI348735B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/963—Removing process residues from vertical substrate surfaces
TW096140350A 2006-10-26 2007-10-26 Integrated method for removal of halogen residues from etched substrates by thermal process TWI348735B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/553,132 US7655571B2 (en) 2006-10-26 2006-10-26 Integrated method and apparatus for efficient removal of halogen residues from etched substrates
US11/676,161 US7846845B2 (en) 2006-10-26 2007-02-16 Integrated method for removal of halogen residues from etched substrates in a processing system

Publications (2)

Publication Number Publication Date
TW200837828A TW200837828A (en) 2008-09-16
TWI348735B true TWI348735B (en) 2011-09-11

Family

ID=38969782

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096140350A TWI348735B (en) 2006-10-26 2007-10-26 Integrated method for removal of halogen residues from etched substrates by thermal process

Country Status (7)

Country Link
US (1) US7846845B2 (https=)
EP (1) EP1916703A3 (https=)
JP (1) JP2008109136A (https=)
KR (1) KR101010419B1 (https=)
CN (1) CN102243989B (https=)
SG (2) SG142270A1 (https=)
TW (1) TWI348735B (https=)

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Also Published As

Publication number Publication date
SG176425A1 (en) 2011-12-29
KR20080037565A (ko) 2008-04-30
US20080099040A1 (en) 2008-05-01
EP1916703A3 (en) 2009-05-06
CN102243989B (zh) 2015-05-20
EP1916703A2 (en) 2008-04-30
SG142270A1 (en) 2008-05-28
KR101010419B1 (ko) 2011-01-21
JP2008109136A (ja) 2008-05-08
TW200837828A (en) 2008-09-16
CN102243989A (zh) 2011-11-16
US7846845B2 (en) 2010-12-07

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