CN102243989B - 通过热处理从所蚀刻的衬底去除卤素残余物的集成方法 - Google Patents

通过热处理从所蚀刻的衬底去除卤素残余物的集成方法 Download PDF

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Publication number
CN102243989B
CN102243989B CN201110160247.6A CN201110160247A CN102243989B CN 102243989 B CN102243989 B CN 102243989B CN 201110160247 A CN201110160247 A CN 201110160247A CN 102243989 B CN102243989 B CN 102243989B
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China
Prior art keywords
substrate
chamber
vacuum
exchange chamber
halogen
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CN201110160247.6A
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Chinese (zh)
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CN102243989A (zh
Inventor
马克·纳什·卡瓦吉奇
洛金庞
布雷特·克里斯琴·胡金森
桑迪·M·温
史蒂文·H·金
肯尼恩·J·巴恩基
马修·芬顿·戴维斯
索斯藤·莱尔
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Applied Materials Inc
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Applied Materials Inc
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Priority claimed from US11/553,132 external-priority patent/US7655571B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/963—Removing process residues from vertical substrate surfaces

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  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN201110160247.6A 2006-10-26 2007-10-26 通过热处理从所蚀刻的衬底去除卤素残余物的集成方法 Active CN102243989B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/553,132 2006-10-26
US11/553,132 US7655571B2 (en) 2006-10-26 2006-10-26 Integrated method and apparatus for efficient removal of halogen residues from etched substrates
US11/676,161 2007-02-16
US11/676,161 US7846845B2 (en) 2006-10-26 2007-02-16 Integrated method for removal of halogen residues from etched substrates in a processing system

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2007101653397A Division CN101170055B (zh) 2006-10-26 2007-10-26 通过热处理从所蚀刻的衬底去除卤素残余物的集成方法

Publications (2)

Publication Number Publication Date
CN102243989A CN102243989A (zh) 2011-11-16
CN102243989B true CN102243989B (zh) 2015-05-20

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Country Status (7)

Country Link
US (1) US7846845B2 (https=)
EP (1) EP1916703A3 (https=)
JP (1) JP2008109136A (https=)
KR (1) KR101010419B1 (https=)
CN (1) CN102243989B (https=)
SG (2) SG142270A1 (https=)
TW (1) TWI348735B (https=)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2668551T3 (es) 2005-09-26 2018-05-18 Lifecell Corporation Composición seca de plaquetas
US7946759B2 (en) * 2007-02-16 2011-05-24 Applied Materials, Inc. Substrate temperature measurement by infrared transmission
JP4952375B2 (ja) * 2007-05-23 2012-06-13 株式会社明電舎 レジスト除去方法及びその装置
KR101214643B1 (ko) * 2007-12-04 2012-12-21 메이덴샤 코포레이션 레지스트 제거방법 및 그를 위한 장치
KR100912965B1 (ko) * 2007-12-24 2009-08-20 주식회사 하이닉스반도체 수직 채널 트랜지스터를 구비한 반도체 소자의 제조 방법
US8525139B2 (en) * 2009-10-27 2013-09-03 Lam Research Corporation Method and apparatus of halogen removal
US8616224B2 (en) 2010-04-30 2013-12-31 Applied Materials, Inc. Methods and apparatus for providing a gas mixture to a pair of process chambers
KR101132568B1 (ko) * 2010-05-06 2012-04-05 주식회사 테스 흄 발생없이 패턴을 형성하는 방법
US20110304078A1 (en) * 2010-06-14 2011-12-15 Applied Materials, Inc. Methods for removing byproducts from load lock chambers
KR101895307B1 (ko) 2011-03-01 2018-10-04 어플라이드 머티어리얼스, 인코포레이티드 듀얼 로드락 구성의 저감 및 스트립 프로세스 챔버
US11171008B2 (en) 2011-03-01 2021-11-09 Applied Materials, Inc. Abatement and strip process chamber in a dual load lock configuration
WO2012148568A1 (en) 2011-03-01 2012-11-01 Applied Materials, Inc. Method and apparatus for substrate transfer and radical confinement
US8845816B2 (en) 2011-03-01 2014-09-30 Applied Materials, Inc. Method extending the service interval of a gas distribution plate
US8992689B2 (en) 2011-03-01 2015-03-31 Applied Materials, Inc. Method for removing halogen-containing residues from substrate
JP6545460B2 (ja) 2012-02-29 2019-07-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ロードロック構成内の除害・剥離処理チャンバ
CN103572253B (zh) * 2012-07-30 2016-02-10 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室和具有它的半导体设备
US20150211114A1 (en) * 2014-01-30 2015-07-30 Applied Materials, Inc. Bottom pump and purge and bottom ozone clean hardware to reduce fall-on particle defects
CN106298581B (zh) * 2015-05-13 2020-10-13 盛美半导体设备(上海)股份有限公司 光辐射加热刻蚀装置及方法
KR20160141244A (ko) * 2015-05-29 2016-12-08 피에스케이 주식회사 기판 처리 장치 및 방법
CN107919298B (zh) * 2016-10-08 2021-01-29 北京北方华创微电子装备有限公司 气相刻蚀装置及设备
US10867843B2 (en) * 2016-12-05 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for fabrication semiconductor device
TWI700750B (zh) * 2017-01-24 2020-08-01 美商應用材料股份有限公司 用於介電薄膜的選擇性沉積之方法及設備
KR102790075B1 (ko) * 2017-02-24 2025-04-04 삼성전자주식회사 잔류 가스 제거 장치 및 이를 포함하는 기판 처리 설비
US10903065B2 (en) * 2017-05-12 2021-01-26 Lam Research Corporation Halogen removal module and associated systems and methods
US20190051540A1 (en) * 2017-08-08 2019-02-14 Lam Research Corporation Systems and methods for plasma-less de-halogenation
KR101981738B1 (ko) * 2017-09-19 2019-05-27 무진전자 주식회사 기판 처리 방법 및 장치
KR102003361B1 (ko) * 2017-09-19 2019-07-24 무진전자 주식회사 인시튜 건식 세정 방법 및 장치
KR102869765B1 (ko) * 2019-05-17 2025-10-13 삼성전자주식회사 소스 용기용 잔류물 제거 장치, 소스 용기 및 극자외선 노광장치
KR102325772B1 (ko) 2019-10-28 2021-11-12 세메스 주식회사 기판처리장치
JP7422531B2 (ja) * 2019-12-17 2024-01-26 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
WO2021141806A1 (en) * 2020-01-07 2021-07-15 Lam Research Corporation Automated cleaning of robot arms of substrate processing systems
KR102603680B1 (ko) * 2020-12-28 2023-11-20 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US11921422B2 (en) * 2021-04-09 2024-03-05 Applied Materials, Inc. Single-volume baking chamber for mask clean
US12384045B2 (en) * 2022-06-06 2025-08-12 GM Global Technology Operations LLC Supplemental and targeted heating of vehicle body-in-white interior components/areas for paint ovens

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0416774A1 (en) * 1989-08-28 1991-03-13 Hitachi, Ltd. A method of treating a sample of aluminium-containing material

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5071714A (en) 1989-04-17 1991-12-10 International Business Machines Corporation Multilayered intermetallic connection for semiconductor devices
KR0155158B1 (ko) * 1989-07-25 1998-12-01 카자마 젠쥬 종형 처리 장치 및 처리방법
GB2238868A (en) * 1989-11-22 1991-06-12 Res Corp Technologies Inc Silicon wafer temperature measurement by optical transmission monitoring.
JPH04268728A (ja) * 1991-02-25 1992-09-24 Hitachi Ltd エッチング方法および装置
US5188979A (en) 1991-08-26 1993-02-23 Motorola Inc. Method for forming a nitride layer using preheated ammonia
JPH05326477A (ja) * 1992-05-26 1993-12-10 Ulvac Japan Ltd 半導体基板表面のハロゲン除去方法
JP3263132B2 (ja) * 1992-07-09 2002-03-04 株式会社東芝 半導体装置の製造方法
JPH0685173A (ja) 1992-07-17 1994-03-25 Toshiba Corp 半導体集積回路用キャパシタ
US5337207A (en) 1992-12-21 1994-08-09 Motorola High-permittivity dielectric capacitor for use in a semiconductor device and process for making the same
JPH06252143A (ja) * 1993-02-25 1994-09-09 Sumitomo Metal Ind Ltd Ａｌ合金膜の処理方法及びその装置
US5356833A (en) 1993-04-05 1994-10-18 Motorola, Inc. Process for forming an intermetallic member on a semiconductor substrate
JP3080834B2 (ja) * 1994-03-30 2000-08-28 株式会社東芝 半導体基板洗浄処理装置
JPH08274072A (ja) * 1995-03-31 1996-10-18 Toshiba Corp 表面処理装置および表面処理方法
US6933182B1 (en) * 1995-04-20 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device and manufacturing system thereof
JPH0969525A (ja) * 1995-08-31 1997-03-11 Mitsubishi Electric Corp 金属配線の処理方法
KR100413649B1 (ko) 1996-01-26 2004-04-28 마츠시타 덴끼 산교 가부시키가이샤 반도체장치의제조방법
US6148072A (en) * 1997-01-03 2000-11-14 Advis, Inc Methods and systems for initiating video communication
JPH1154721A (ja) 1997-07-29 1999-02-26 Nec Corp 半導体装置の製造方法および製造装置
US6136211A (en) 1997-11-12 2000-10-24 Applied Materials, Inc. Self-cleaning etch process
KR100275754B1 (ko) 1998-05-15 2000-12-15 윤종용 커패시터 하부전극의 반구형 그레인 형성전 전처리방법
JP2000012526A (ja) * 1998-06-25 2000-01-14 Mitsubishi Electric Corp プラズマ処理装置およびプラズマ処理方法
US6211035B1 (en) 1998-09-09 2001-04-03 Texas Instruments Incorporated Integrated circuit and method
JP2000286200A (ja) * 1999-03-31 2000-10-13 Kokusai Electric Co Ltd 熱処理方法および熱処理装置
US6379574B1 (en) 1999-05-03 2002-04-30 Applied Materials, Inc. Integrated post-etch treatment for a dielectric etch process
US6319730B1 (en) 1999-07-15 2001-11-20 Motorola, Inc. Method of fabricating a semiconductor structure including a metal oxide interface
US6270568B1 (en) 1999-07-15 2001-08-07 Motorola, Inc. Method for fabricating a semiconductor structure with reduced leakage current density
US6479801B1 (en) * 1999-10-22 2002-11-12 Tokyo Electron Limited Temperature measuring method, temperature control method and processing apparatus
US6485988B2 (en) 1999-12-22 2002-11-26 Texas Instruments Incorporated Hydrogen-free contact etch for ferroelectric capacitor formation
AU3084101A (en) * 2000-01-05 2001-07-16 Tokyo Electron Limited A method of wafer band-edge measurement using transmission spectroscopy and a process for controlling the temperature uniformity of a wafer
GB0000901D0 (en) 2000-01-14 2000-03-08 Isis Innovation Antiparasitic agent
US6514378B1 (en) * 2000-03-31 2003-02-04 Lam Research Corporation Method for improving uniformity and reducing etch rate variation of etching polysilicon
US6184072B1 (en) 2000-05-17 2001-02-06 Motorola, Inc. Process for forming a high-K gate dielectric
US6300202B1 (en) 2000-05-18 2001-10-09 Motorola Inc. Selective removal of a metal oxide dielectric
US6444512B1 (en) 2000-06-12 2002-09-03 Motorola, Inc. Dual metal gate transistors for CMOS process
US6297095B1 (en) 2000-06-16 2001-10-02 Motorola, Inc. Memory device that includes passivated nanoclusters and method for manufacture
US6440864B1 (en) * 2000-06-30 2002-08-27 Applied Materials Inc. Substrate cleaning process
KR20020009332A (ko) 2000-07-26 2002-02-01 주승기 강유전체 박막의 결정화 방법
US6204141B1 (en) 2000-09-13 2001-03-20 Taiwan Semiconductor Mfg. Co. Ltd. Method of manufacturing a deep trench capacitor
US6326261B1 (en) 2001-01-05 2001-12-04 United Microelectronics Corp. Method of fabricating a deep trench capacitor
US6348386B1 (en) 2001-04-16 2002-02-19 Motorola, Inc. Method for making a hafnium-based insulating film
US6806095B2 (en) 2002-03-06 2004-10-19 Padmapani C. Nallan Method of plasma etching of high-K dielectric materials with high selectivity to underlying layers
US6902681B2 (en) 2002-06-26 2005-06-07 Applied Materials Inc Method for plasma etching of high-K dielectric materials
US20040007561A1 (en) 2002-07-12 2004-01-15 Applied Materials, Inc. Method for plasma etching of high-K dielectric materials
JP2005109030A (ja) * 2003-09-29 2005-04-21 Toshiba Corp 電子デバイス製造方法
US7094613B2 (en) * 2003-10-21 2006-08-22 Applied Materials, Inc. Method for controlling accuracy and repeatability of an etch process
JP2006261157A (ja) * 2005-03-15 2006-09-28 Ricoh Co Ltd 半導体装置の製造方法及び半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0416774A1 (en) * 1989-08-28 1991-03-13 Hitachi, Ltd. A method of treating a sample of aluminium-containing material

Also Published As

Publication number Publication date
SG176425A1 (en) 2011-12-29
KR20080037565A (ko) 2008-04-30
US20080099040A1 (en) 2008-05-01
EP1916703A3 (en) 2009-05-06
EP1916703A2 (en) 2008-04-30
SG142270A1 (en) 2008-05-28
KR101010419B1 (ko) 2011-01-21
JP2008109136A (ja) 2008-05-08
TW200837828A (en) 2008-09-16
TWI348735B (en) 2011-09-11
CN102243989A (zh) 2011-11-16
US7846845B2 (en) 2010-12-07

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