TWI345137B - Positive photosensitive resin composition and curable film forming method using the same - Google Patents

Positive photosensitive resin composition and curable film forming method using the same Download PDF

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Publication number
TWI345137B
TWI345137B TW097137302A TW97137302A TWI345137B TW I345137 B TWI345137 B TW I345137B TW 097137302 A TW097137302 A TW 097137302A TW 97137302 A TW97137302 A TW 97137302A TW I345137 B TWI345137 B TW I345137B
Authority
TW
Taiwan
Prior art keywords
group
resin composition
photosensitive resin
forming
electronic component
Prior art date
Application number
TW097137302A
Other languages
English (en)
Chinese (zh)
Other versions
TW200928587A (en
Inventor
Satoshi Takita
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of TW200928587A publication Critical patent/TW200928587A/zh
Application granted granted Critical
Publication of TWI345137B publication Critical patent/TWI345137B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/202—LCD, i.e. liquid crystal displays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/206—Organic displays, e.g. OLED
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW097137302A 2007-09-28 2008-09-26 Positive photosensitive resin composition and curable film forming method using the same TWI345137B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007256203 2007-09-28
JP2008246883A JP4637221B2 (ja) 2007-09-28 2008-09-25 ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法

Publications (2)

Publication Number Publication Date
TW200928587A TW200928587A (en) 2009-07-01
TWI345137B true TWI345137B (en) 2011-07-11

Family

ID=40511499

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097137302A TWI345137B (en) 2007-09-28 2008-09-26 Positive photosensitive resin composition and curable film forming method using the same

Country Status (7)

Country Link
US (2) US9034440B2 (https=)
EP (1) EP2196852A4 (https=)
JP (1) JP4637221B2 (https=)
KR (1) KR101021187B1 (https=)
CN (1) CN101809503B (https=)
TW (1) TWI345137B (https=)
WO (1) WO2009041619A1 (https=)

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JP4637209B2 (ja) 2007-06-05 2011-02-23 富士フイルム株式会社 ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法
JP4718623B2 (ja) * 2008-03-28 2011-07-06 富士フイルム株式会社 ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法
TWI461848B (zh) 2008-03-28 2014-11-21 富士軟片股份有限公司 正型感光性樹脂組成物及使用它的硬化膜形成方法
EP2309332A4 (en) 2008-07-15 2012-01-25 Jsr Corp RADIATION-SENSITIVE POSITIVE COMPOSITION AND METHOD FOR FORMING A RESISTANCE STRUCTURE
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JP5538039B2 (ja) * 2009-05-01 2014-07-02 富士フイルム株式会社 ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法
JP5452102B2 (ja) * 2009-07-02 2014-03-26 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP5520590B2 (ja) * 2009-10-06 2014-06-11 富士フイルム株式会社 パターン形成方法、化学増幅型レジスト組成物及びレジスト膜
JP5451570B2 (ja) * 2009-10-16 2014-03-26 富士フイルム株式会社 感光性樹脂組成物、硬化膜の形成方法、硬化膜、有機ｅｌ表示装置、及び、液晶表示装置
JP5425031B2 (ja) * 2009-10-16 2014-02-26 富士フイルム株式会社 感光性樹脂組成物、硬化膜の形成方法、硬化膜、有機ｅｌ表示装置、及び、液晶表示装置
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JP5623896B2 (ja) * 2010-01-15 2014-11-12 富士フイルム株式会社 感光性樹脂組成物、硬化膜の形成方法、硬化膜、有機ｅｌ表示装置、及び、液晶表示装置
KR101618897B1 (ko) * 2010-01-20 2016-05-09 후지필름 가부시키가이샤 경화막의 제조 방법, 감광성 수지 조성물, 경화 막, 유기 ｅｌ 표시 장치, 및 액정 표시 장치
JP5528314B2 (ja) * 2010-01-20 2014-06-25 富士フイルム株式会社 硬化膜の製造方法、感光性樹脂組成物、硬化膜、有機ｅｌ表示装置、及び、液晶表示装置
CN102741752B (zh) * 2010-02-02 2014-08-20 日产化学工业株式会社 正型感光性树脂组合物和拒液性被膜
JP4591625B1 (ja) * 2010-04-01 2010-12-01 Ｊｓｒ株式会社 ポジ型感放射線性組成物、層間絶縁膜及びその形成方法
JP5454321B2 (ja) 2010-04-14 2014-03-26 Ｊｓｒ株式会社 ポジ型感放射線性組成物、層間絶縁膜及びその形成方法
JP5625460B2 (ja) * 2010-04-15 2014-11-19 Jsr株式会社 ポジ型感放射線性組成物、層間絶縁膜及びその形成方法
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CN102870047B (zh) * 2010-04-28 2016-03-02 Jsr株式会社 正型感射线性组合物、显示元件用层间绝缘膜及其形成方法
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JP5771377B2 (ja) * 2010-10-05 2015-08-26 株式会社ジャパンディスプレイ 表示装置の製造方法
JP5536625B2 (ja) * 2010-12-15 2014-07-02 富士フイルム株式会社 感光性樹脂組成物、硬化膜の形成方法、硬化膜、有機ｅｌ表示装置、及び、液晶表示装置
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KR101909072B1 (ko) * 2011-08-31 2018-10-18 후지필름 가부시키가이샤 감광성 수지 조성물, 경화막, 경화막의 형성 방법, 유기 ｅｌ 표시 장치, 및, 액정 표시 장치
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WO2009041619A1 (ja) 2009-04-02
US20110229661A1 (en) 2011-09-22
EP2196852A4 (en) 2011-08-10
CN101809503A (zh) 2010-08-18
CN101809503B (zh) 2012-09-05
KR20100055508A (ko) 2010-05-26
JP2009098673A (ja) 2009-05-07
US20150212406A1 (en) 2015-07-30
EP2196852A1 (en) 2010-06-16
US9964848B2 (en) 2018-05-08

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