TWI342038B - - Google Patents
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- Publication number
- TWI342038B TWI342038B TW096113599A TW96113599A TWI342038B TW I342038 B TWI342038 B TW I342038B TW 096113599 A TW096113599 A TW 096113599A TW 96113599 A TW96113599 A TW 96113599A TW I342038 B TWI342038 B TW I342038B
- Authority
- TW
- Taiwan
- Prior art keywords
- exposure
- pattern
- light
- mask
- reticle
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N2021/95676—Masks, reticles, shadow masks
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pathology (AREA)
- Chemical & Material Sciences (AREA)
- Immunology (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006123123 | 2006-04-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200746259A TW200746259A (en) | 2007-12-16 |
TWI342038B true TWI342038B (ja) | 2011-05-11 |
Family
ID=38655378
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096113599A TW200746259A (en) | 2006-04-27 | 2007-04-18 | Measuring and/or inspecting method, measuring and/or inspecting apparatus, exposure method, device manufacturing method, and device manufacturing apparatus |
Country Status (5)
Country | Link |
---|---|
US (1) | US7688436B2 (ja) |
JP (1) | JP5057248B2 (ja) |
KR (1) | KR101357960B1 (ja) |
TW (1) | TW200746259A (ja) |
WO (1) | WO2007125853A1 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5252249B2 (ja) * | 2006-02-17 | 2013-07-31 | 株式会社ニコン | デバイス製造処理方法 |
US8023102B2 (en) * | 2008-04-18 | 2011-09-20 | International Business Machines Corporation | Test method for determining reticle transmission stability |
KR101292570B1 (ko) * | 2008-12-31 | 2013-08-12 | 엘지디스플레이 주식회사 | 액정표시장치의 변형 검사시스템 |
TWI488245B (zh) * | 2009-05-19 | 2015-06-11 | United Microelectronics Corp | 檢測光阻圖案的方法 |
JP5296260B2 (ja) | 2010-03-30 | 2013-09-25 | Hoya株式会社 | マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法及び半導体デバイスの製造方法 |
JP5742370B2 (ja) * | 2011-03-29 | 2015-07-01 | 凸版印刷株式会社 | マスク基板の製造方法 |
NL2009853A (en) | 2011-12-23 | 2013-06-26 | Asml Netherlands Bv | Methods and apparatus for measuring a property of a substrate. |
JP5797582B2 (ja) * | 2012-02-24 | 2015-10-21 | 株式会社アドテックエンジニアリング | 露光描画装置、プログラム及び露光描画方法 |
JP6200224B2 (ja) * | 2012-09-13 | 2017-09-20 | 日本メクトロン株式会社 | フォトマスク、フォトマスク組、露光装置および露光方法 |
JP6310263B2 (ja) * | 2014-01-30 | 2018-04-11 | 株式会社ニューフレアテクノロジー | 検査装置 |
JP6942634B2 (ja) * | 2015-03-03 | 2021-09-29 | レブストック,ルッツ | 点検システム |
US9548274B1 (en) * | 2015-11-20 | 2017-01-17 | Taiwan Semiconductor Manufacturing Company Ltd. | Reticle for non-rectangular die |
KR102450492B1 (ko) * | 2016-10-21 | 2022-09-30 | 에이에스엠엘 네델란즈 비.브이. | 패터닝 프로세스용 보정 결정 방법 |
JP7262939B2 (ja) * | 2018-07-20 | 2023-04-24 | キヤノン株式会社 | クリーニング装置、インプリント装置、リソグラフィ装置、および、クリーニング方法 |
JP2020076609A (ja) * | 2018-11-06 | 2020-05-21 | キヤノン株式会社 | 異物検査装置、処理装置および物品製造方法 |
KR102160170B1 (ko) * | 2018-11-21 | 2020-09-25 | 에스케이실트론 주식회사 | 웨이퍼 표면의 파티클 측정 장치 및 방법 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3615464A (en) * | 1968-11-19 | 1971-10-26 | Ibm | Process of producing an array of integrated circuits on semiconductor substrate |
DE2837590A1 (de) * | 1978-08-29 | 1980-03-13 | Ibm Deutschland | Verfahren zur schattenwurfbelichtung |
JPH0648380B2 (ja) * | 1985-06-13 | 1994-06-22 | 株式会社東芝 | マスク検査方法 |
NL8600639A (nl) * | 1986-03-12 | 1987-10-01 | Asm Lithography Bv | Werkwijze voor het ten opzichte van elkaar uitrichten van een masker en een substraat en inrichting voor het uitvoeren van de werkwijze. |
JPH0528273A (ja) * | 1991-05-13 | 1993-02-05 | Nikon Corp | 画像処理方法および装置 |
DE69223759T2 (de) | 1992-01-31 | 1998-04-23 | Mitsubishi Electric Corp | Phasenverschiebungsmaske und Verfahren zur Erzeugung eines Fotolackmusters unter Verwendung dieser Maske |
US5370975A (en) * | 1992-01-31 | 1994-12-06 | Mitsubishi Denki Kabushiki Kaisha | Method for forming resist pattern |
JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP3409493B2 (ja) * | 1995-03-13 | 2003-05-26 | ソニー株式会社 | マスクパターンの補正方法および補正装置 |
US5838433A (en) * | 1995-04-19 | 1998-11-17 | Nikon Corporation | Apparatus for detecting defects on a mask |
KR100206594B1 (ko) * | 1995-09-27 | 1999-07-01 | 김주용 | 반도체 소자의 공정 결함 검사방법 |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
AU5067898A (en) | 1996-11-28 | 1998-06-22 | Nikon Corporation | Aligner and method for exposure |
JPH10209039A (ja) | 1997-01-27 | 1998-08-07 | Nikon Corp | 投影露光方法及び投影露光装置 |
JPH10223512A (ja) * | 1997-02-10 | 1998-08-21 | Nikon Corp | 電子ビーム投影露光装置 |
EP0900412B1 (en) | 1997-03-10 | 2005-04-06 | ASML Netherlands B.V. | Lithographic apparatus comprising a positioning device having two object holders |
JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
US6757645B2 (en) * | 1997-09-17 | 2004-06-29 | Numerical Technologies, Inc. | Visual inspection and verification system |
JP4210871B2 (ja) | 1997-10-31 | 2009-01-21 | 株式会社ニコン | 露光装置 |
JP4264676B2 (ja) | 1998-11-30 | 2009-05-20 | 株式会社ニコン | 露光装置及び露光方法 |
AU2747999A (en) | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
JP2001047600A (ja) * | 1999-08-10 | 2001-02-20 | Fuji Mach Mfg Co Ltd | マスク印刷方法およびマスク印刷装置 |
JP2001174977A (ja) | 1999-12-20 | 2001-06-29 | Nec Corp | 露光パターン及び露光原版の検査方法 |
US6701004B1 (en) * | 1999-12-22 | 2004-03-02 | Intel Corporation | Detecting defects on photomasks |
JP2001250756A (ja) | 2000-03-03 | 2001-09-14 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US6404481B1 (en) * | 2000-05-25 | 2002-06-11 | Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College | Adaptive lithography membrane masks |
DE10103958C1 (de) * | 2001-01-30 | 2002-05-29 | Infineon Technologies Ag | Verfahren zur Inspektion von Defekten auf einer Maske |
JP4104840B2 (ja) * | 2001-08-23 | 2008-06-18 | 株式会社東芝 | マスクパターン評価システム及びその方法 |
JP2004012779A (ja) * | 2002-06-06 | 2004-01-15 | Sony Corp | マスクの検査方法およびマスク欠陥検査装置 |
JP2004191297A (ja) | 2002-12-13 | 2004-07-08 | Sony Corp | マスク検査方法および検査装置 |
-
2007
- 2007-04-18 TW TW096113599A patent/TW200746259A/zh not_active IP Right Cessation
- 2007-04-20 US US11/785,865 patent/US7688436B2/en not_active Expired - Fee Related
- 2007-04-23 JP JP2008513187A patent/JP5057248B2/ja not_active Expired - Fee Related
- 2007-04-23 KR KR1020087017940A patent/KR101357960B1/ko active IP Right Grant
- 2007-04-23 WO PCT/JP2007/058716 patent/WO2007125853A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
KR20090009773A (ko) | 2009-01-23 |
TW200746259A (en) | 2007-12-16 |
WO2007125853A1 (ja) | 2007-11-08 |
US7688436B2 (en) | 2010-03-30 |
JPWO2007125853A1 (ja) | 2009-09-10 |
US20070259290A1 (en) | 2007-11-08 |
KR101357960B1 (ko) | 2014-02-03 |
JP5057248B2 (ja) | 2012-10-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |