TWI340294B - Radiation sensitive resin composition, manufacturing method thereof and fabricating method of semiconductor device using the same - Google Patents

Radiation sensitive resin composition, manufacturing method thereof and fabricating method of semiconductor device using the same

Info

Publication number
TWI340294B
TWI340294B TW093102993A TW93102993A TWI340294B TW I340294 B TWI340294 B TW I340294B TW 093102993 A TW093102993 A TW 093102993A TW 93102993 A TW93102993 A TW 93102993A TW I340294 B TWI340294 B TW I340294B
Authority
TW
Taiwan
Prior art keywords
manufacturing
semiconductor device
resin composition
same
sensitive resin
Prior art date
Application number
TW093102993A
Other languages
English (en)
Other versions
TW200422777A (en
Inventor
Kenichi Murakami
Suguru Sassa
Katsuhiro Yoshikawa
Masato Nishikawa
Ken Kimura
Yoshiaki Kinoshita
Original Assignee
Az Electronic Materials Japan
Spansion Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Japan, Spansion Llc filed Critical Az Electronic Materials Japan
Publication of TW200422777A publication Critical patent/TW200422777A/zh
Application granted granted Critical
Publication of TWI340294B publication Critical patent/TWI340294B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00—Compositions of unspecified macromolecular compounds
    • C08L101/02—Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW093102993A 2003-02-10 2004-02-10 Radiation sensitive resin composition, manufacturing method thereof and fabricating method of semiconductor device using the same TWI340294B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003032339A JP4222850B2 (ja) 2003-02-10 2003-02-10 感放射線性樹脂組成物、その製造法並びにそれを用いた半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200422777A TW200422777A (en) 2004-11-01
TWI340294B true TWI340294B (en) 2011-04-11

Family

ID=32844335

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093102993A TWI340294B (en) 2003-02-10 2004-02-10 Radiation sensitive resin composition, manufacturing method thereof and fabricating method of semiconductor device using the same

Country Status (7)

Country Link
US (1) US20070160927A1 (zh)
JP (1) JP4222850B2 (zh)
KR (1) KR20050109483A (zh)
CN (1) CN100568098C (zh)
DE (1) DE112004000257B4 (zh)
TW (1) TWI340294B (zh)
WO (1) WO2004070473A1 (zh)

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KR101348607B1 (ko) * 2006-02-14 2014-01-07 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 박막 패터닝 방법과 이를 이용한 액정 표시 패널의 제조 방법
KR101585274B1 (ko) * 2007-08-09 2016-01-13 제이에스알 가부시끼가이샤 감방사선성 수지 조성물
KR101120177B1 (ko) * 2008-03-06 2012-02-27 주식회사 하이닉스반도체 반도체 소자 제조 방법
US8822347B2 (en) * 2009-04-27 2014-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Wet soluble lithography
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US11675267B2 (en) * 2020-03-23 2023-06-13 Sumitomo Chemical Company, Limited Resist composition and method for producing resist pattern

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Also Published As

Publication number Publication date
TW200422777A (en) 2004-11-01
CN100568098C (zh) 2009-12-09
WO2004070473A1 (ja) 2004-08-19
DE112004000257B4 (de) 2022-08-11
CN1748181A (zh) 2006-03-15
US20070160927A1 (en) 2007-07-12
KR20050109483A (ko) 2005-11-21
DE112004000257T5 (de) 2006-02-23
JP4222850B2 (ja) 2009-02-12
JP2004264352A (ja) 2004-09-24

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