HK1063881A1 - Semiconductor package and method of fabricating the same - Google Patents
Semiconductor package and method of fabricating the sameInfo
- Publication number
- HK1063881A1 HK1063881A1 HK04106657A HK04106657A HK1063881A1 HK 1063881 A1 HK1063881 A1 HK 1063881A1 HK 04106657 A HK04106657 A HK 04106657A HK 04106657 A HK04106657 A HK 04106657A HK 1063881 A1 HK1063881 A1 HK 1063881A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- fabricating
- same
- semiconductor package
- package
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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- H01L2924/01004—Beryllium [Be]
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- H01L2924/01006—Carbon [C]
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- H01L2924/01013—Aluminum [Al]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H01L2924/01078—Platinum [Pt]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01082—Lead [Pb]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/014—Solder alloys
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12043—Photo diode
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
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- H01L2924/14—Integrated circuits
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002274807A JP4126389B2 (en) | 2002-09-20 | 2002-09-20 | Manufacturing method of semiconductor package |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1063881A1 true HK1063881A1 (en) | 2005-01-14 |
Family
ID=31986967
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK04106657A HK1063881A1 (en) | 2002-09-20 | 2004-09-03 | Semiconductor package and method of fabricating the same |
Country Status (6)
Country | Link |
---|---|
US (1) | US6888209B2 (en) |
JP (1) | JP4126389B2 (en) |
KR (1) | KR100576775B1 (en) |
CN (1) | CN100383964C (en) |
HK (1) | HK1063881A1 (en) |
TW (1) | TWI248143B (en) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3829325B2 (en) | 2002-02-07 | 2006-10-04 | 日本電気株式会社 | Semiconductor element, manufacturing method thereof, and manufacturing method of semiconductor device |
JP3614840B2 (en) * | 2002-11-28 | 2005-01-26 | 沖電気工業株式会社 | Semiconductor device |
JP4269806B2 (en) * | 2003-06-30 | 2009-05-27 | カシオ計算機株式会社 | Semiconductor device and manufacturing method thereof |
JP4398305B2 (en) * | 2004-06-02 | 2010-01-13 | カシオ計算機株式会社 | Semiconductor device and manufacturing method thereof |
JP4537793B2 (en) * | 2004-07-30 | 2010-09-08 | 大日本印刷株式会社 | Sensor unit and manufacturing method thereof |
JP2006128625A (en) * | 2004-09-30 | 2006-05-18 | Oki Electric Ind Co Ltd | Semiconductor device and its manufacturing method |
JP4537828B2 (en) * | 2004-10-29 | 2010-09-08 | 大日本印刷株式会社 | Sensor package and manufacturing method thereof |
JP4990492B2 (en) * | 2004-11-19 | 2012-08-01 | 株式会社テラミクロス | Semiconductor device |
KR20060087273A (en) | 2005-01-28 | 2006-08-02 | 삼성전기주식회사 | Semiconductor package and method of fabricating the same |
KR100616670B1 (en) * | 2005-02-01 | 2006-08-28 | 삼성전기주식회사 | Image sensor module of chip scale and method of fabricating the same |
JP4752280B2 (en) * | 2005-02-08 | 2011-08-17 | カシオ計算機株式会社 | Chip-type electronic component and manufacturing method thereof |
CN102174296A (en) | 2005-07-05 | 2011-09-07 | 日立化成工业株式会社 | Adhesive composition, adhesive film, adhesive sheet, semiconductor wafer and semiconductor device |
JP4486005B2 (en) | 2005-08-03 | 2010-06-23 | パナソニック株式会社 | Semiconductor imaging device and manufacturing method thereof |
JP4289335B2 (en) * | 2005-08-10 | 2009-07-01 | セイコーエプソン株式会社 | Electronic components, circuit boards and electronic equipment |
JP2007142058A (en) | 2005-11-17 | 2007-06-07 | Matsushita Electric Ind Co Ltd | Semiconductor imaging element and manufacturing method thereof, and semiconductor imaging apparatus and manufacturing method thereof |
JP2007299929A (en) * | 2006-04-28 | 2007-11-15 | Matsushita Electric Ind Co Ltd | Optical device, and optical device module employing it |
US7615474B2 (en) * | 2006-11-22 | 2009-11-10 | Seiko Epson Corporation | Method for manufacturing semiconductor device with reduced damage to metal wiring layer |
JP5330697B2 (en) * | 2007-03-19 | 2013-10-30 | 株式会社リコー | Functional element package and manufacturing method thereof |
US7675131B2 (en) * | 2007-04-05 | 2010-03-09 | Micron Technology, Inc. | Flip-chip image sensor packages and methods of fabricating the same |
US8829663B2 (en) * | 2007-07-02 | 2014-09-09 | Infineon Technologies Ag | Stackable semiconductor package with encapsulant and electrically conductive feed-through |
JP4921286B2 (en) * | 2007-08-24 | 2012-04-25 | キヤノン株式会社 | Imaging device and photoelectric conversion element package holding unit |
JP5089336B2 (en) * | 2007-10-29 | 2012-12-05 | 新光電気工業株式会社 | Silicon substrate for package |
JP5690466B2 (en) * | 2008-01-31 | 2015-03-25 | インヴェンサス・コーポレイション | Manufacturing method of semiconductor chip package |
JP2009283503A (en) * | 2008-05-19 | 2009-12-03 | Panasonic Corp | Semiconductor device and method for manufacturing the same |
KR100990945B1 (en) | 2008-11-10 | 2010-11-01 | 주식회사 하이닉스반도체 | Image sensor module and method of manufacturing the same |
US8759949B2 (en) | 2009-04-30 | 2014-06-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer backside structures having copper pillars |
TW201113962A (en) * | 2009-10-14 | 2011-04-16 | Advanced Semiconductor Eng | Chip having metal pillar structure |
TWI445147B (en) * | 2009-10-14 | 2014-07-11 | Advanced Semiconductor Eng | Semiconductor device |
CN101877332B (en) * | 2010-06-13 | 2012-03-28 | 江阴市赛英电子有限公司 | Novel plate pressure welding type multichip packaging ceramic package |
US8552517B1 (en) * | 2010-09-14 | 2013-10-08 | Amkor Technology, Inc. | Conductive paste and mold for electrical connection of photovoltaic die to substrate |
TWI478303B (en) | 2010-09-27 | 2015-03-21 | Advanced Semiconductor Eng | Chip having metal pillar and package having the same |
TWI451546B (en) | 2010-10-29 | 2014-09-01 | Advanced Semiconductor Eng | Stacked semiconductor package, semiconductor package thereof and method for making a semiconductor package |
JP2012256675A (en) * | 2011-06-08 | 2012-12-27 | Shinko Electric Ind Co Ltd | Wiring board, semiconductor device, and manufacturing method of semiconductor device |
US8901730B2 (en) | 2012-05-03 | 2014-12-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for package on package devices |
US8884443B2 (en) | 2012-07-05 | 2014-11-11 | Advanced Semiconductor Engineering, Inc. | Substrate for semiconductor package and process for manufacturing |
US8686568B2 (en) | 2012-09-27 | 2014-04-01 | Advanced Semiconductor Engineering, Inc. | Semiconductor package substrates having layered circuit segments, and related methods |
JP6102941B2 (en) | 2012-11-30 | 2017-03-29 | パナソニック株式会社 | Optical device and manufacturing method thereof |
CN105575825A (en) * | 2015-12-24 | 2016-05-11 | 合肥祖安投资合伙企业(有限合伙) | Chip packaging method and packaging assembly |
JP7150632B2 (en) * | 2019-02-13 | 2022-10-11 | キオクシア株式会社 | Semiconductor device manufacturing method |
CN110473792B (en) * | 2019-09-02 | 2021-04-02 | 电子科技大学 | Reconstruction method for integrated circuit wafer level packaging |
JP2023147595A (en) * | 2022-03-30 | 2023-10-13 | 浜松ホトニクス株式会社 | Method for manufacturing optical semiconductor package |
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JPH01220477A (en) * | 1988-02-29 | 1989-09-04 | Kyocera Corp | Photoelectric conversion device |
JPH04246852A (en) | 1991-02-01 | 1992-09-02 | Nec Corp | Package for semiconductor device |
JP3317740B2 (en) * | 1993-05-07 | 2002-08-26 | 浜松ホトニクス株式会社 | Semiconductor energy ray detector and method of manufacturing the same |
US5962810A (en) | 1997-09-09 | 1999-10-05 | Amkor Technology, Inc. | Integrated circuit package employing a transparent encapsulant |
JP3346320B2 (en) * | 1999-02-03 | 2002-11-18 | カシオ計算機株式会社 | Semiconductor device and manufacturing method thereof |
JP3465617B2 (en) * | 1999-02-15 | 2003-11-10 | カシオ計算機株式会社 | Semiconductor device |
US6348728B1 (en) * | 2000-01-28 | 2002-02-19 | Fujitsu Limited | Semiconductor device having a plurality of semiconductor elements interconnected by a redistribution layer |
JP2002158312A (en) * | 2000-11-17 | 2002-05-31 | Oki Electric Ind Co Ltd | Semiconductor package for three-dimensional mounting, its manufacturing method and semiconductor device |
US6740950B2 (en) * | 2001-01-15 | 2004-05-25 | Amkor Technology, Inc. | Optical device packages having improved conductor efficiency, optical coupling and thermal transfer |
JP3767398B2 (en) * | 2001-03-19 | 2006-04-19 | カシオ計算機株式会社 | Semiconductor device and manufacturing method thereof |
JP3939504B2 (en) * | 2001-04-17 | 2007-07-04 | カシオ計算機株式会社 | Semiconductor device, method for manufacturing the same, and mounting structure |
TW503496B (en) * | 2001-12-31 | 2002-09-21 | Megic Corp | Chip packaging structure and manufacturing process of the same |
US6673698B1 (en) * | 2002-01-19 | 2004-01-06 | Megic Corporation | Thin film semiconductor package utilizing a glass substrate with composite polymer/metal interconnect layers |
US6770971B2 (en) * | 2002-06-14 | 2004-08-03 | Casio Computer Co., Ltd. | Semiconductor device and method of fabricating the same |
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2002
- 2002-09-20 JP JP2002274807A patent/JP4126389B2/en not_active Expired - Fee Related
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2003
- 2003-09-15 US US10/663,043 patent/US6888209B2/en not_active Expired - Lifetime
- 2003-09-19 KR KR1020030064954A patent/KR100576775B1/en not_active IP Right Cessation
- 2003-09-19 CN CNB031586538A patent/CN100383964C/en not_active Expired - Fee Related
- 2003-09-19 TW TW092125841A patent/TWI248143B/en not_active IP Right Cessation
-
2004
- 2004-09-03 HK HK04106657A patent/HK1063881A1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2004111792A (en) | 2004-04-08 |
JP4126389B2 (en) | 2008-07-30 |
KR100576775B1 (en) | 2006-05-08 |
CN1492503A (en) | 2004-04-28 |
TWI248143B (en) | 2006-01-21 |
CN100383964C (en) | 2008-04-23 |
TW200414380A (en) | 2004-08-01 |
US20040056340A1 (en) | 2004-03-25 |
KR20040030303A (en) | 2004-04-09 |
US6888209B2 (en) | 2005-05-03 |
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