JPH01220477A - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPH01220477A JPH01220477A JP63046460A JP4646088A JPH01220477A JP H01220477 A JPH01220477 A JP H01220477A JP 63046460 A JP63046460 A JP 63046460A JP 4646088 A JP4646088 A JP 4646088A JP H01220477 A JPH01220477 A JP H01220477A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- film
- protective film
- semiconductor layer
- solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 83
- 239000002184 metal Substances 0.000 claims abstract description 83
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 230000001681 protective effect Effects 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 12
- 238000004891 communication Methods 0.000 claims description 5
- 229910000679 solder Inorganic materials 0.000 abstract description 32
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract description 6
- 238000005476 soldering Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 91
- 239000010410 layer Substances 0.000 description 44
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 238000000034 method Methods 0.000 description 14
- 229910052759 nickel Inorganic materials 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000005007 epoxy-phenolic resin Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 229920006015 heat resistant resin Polymers 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業の利用分野〕
本発明は光照射を受けると光起電力を発生したり、導電
率の変化を発生したりする光電変換装置、即ち太陽電池
、光センサーに関するものであり、外部リード線を強固
に半田付は可能にしたり、回路基板に接着実装可能なチ
ップ化できる従来にない電極構造を有する光電変換装置
である。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a photoelectric conversion device that generates photovoltaic force or changes in conductivity when irradiated with light, that is, solar cells and optical sensors. This photoelectric conversion device has an unprecedented electrode structure that allows external lead wires to be firmly soldered and can be made into a chip that can be adhesively mounted on a circuit board.
本出願人は、外部リード線を強固に半田付は可能にする
光電変換装置である光起電力装置を既に提案した。The present applicant has already proposed a photovoltaic device, which is a photoelectric conversion device that allows external lead wires to be firmly soldered.
第５図はその断面構造であり、ガラス基板５０上に透明
電極５２、Ｐ−Ｉ−Ｎ接合した非晶質半導体層５３、金
属電極５４及び耐熱保護膜５５が形成されている。FIG. 5 shows its cross-sectional structure, in which a transparent electrode 52, a P-I-N bonded amorphous semiconductor layer 53, a metal electrode 54, and a heat-resistant protective film 55 are formed on a glass substrate 50.
上述の金属電極５４は非晶質半導体層５３とオーミック
コンタクトし、非晶質半導体層５３にダメージを少ない
薄膜技法により形成され、且つ直接半田デイツプ又は半
田付けが可能な材料としてニッケルが使用されている。The metal electrode 54 described above is in ohmic contact with the amorphous semiconductor layer 53, is formed by a thin film technique that causes less damage to the amorphous semiconductor layer 53, and uses nickel as a material that can be directly soldered or soldered. There is.
そして光起電力装置の出力は透明電極５２の延長部５６
上に形成されたニッケルの出力端子５７と、耐熱保護膜
５５から露出した金属電極５４との間から得られる。The output of the photovoltaic device is then an extension 56 of the transparent electrode 52.
It is obtained from between the nickel output terminal 57 formed above and the metal electrode 54 exposed from the heat-resistant protective film 55.
上述の光起電力装置に外部リード線５８を半田５９付け
すると、該外部リード線５８の引っ張り強度としては０
．３〜２．０ｋｇ重の力（平均１．０ｋｇ重の力）の強
度が達成された。 しかしながら、薄膜技法によって形
成されたニッケルの金属電極５４は、膜厚に制限があり
、半田デイツプ時に半田のニッケル食いが生じてしまい
、０．３〜２．０ｋｇ重以上の電極強度が得られず、し
かも引っ張り強度のばらつきが大きいため、回路基板に
接着実装可能なチップ化に若干の信頼性を欠いていた。When the external lead wire 58 is soldered 59 to the photovoltaic device described above, the tensile strength of the external lead wire 58 is 0.
．． Intensities of 3-2.0 kg force (average 1.0 kg force) were achieved. However, the nickel metal electrode 54 formed by the thin film technique has a limited film thickness, and the solder nicks into the nickel during solder dipping, making it impossible to obtain an electrode strength of 0.3 to 2.0 kg or more. Moreover, because of the large variation in tensile strength, there was a slight lack of reliability in making chips that could be adhesively mounted on circuit boards.
本発明は、上述の問題点に鑑み案出されたものであり、
その目的は外部リード線を強固に半田付は可能にしたり
、回路基板に接着実装可能なチップ化できる新規な電極
構造を有する光電変換装置を提供するものである。The present invention was devised in view of the above problems, and
The purpose is to provide a photoelectric conversion device that has a novel electrode structure that allows external lead wires to be firmly soldered and that can be made into a chip that can be adhesively mounted on a circuit board.
〔問題点を解決するだめの具体的な手段〕本発明によれ
ば、上述の問題点を解決するために、基板上に被着され
た非晶質半導体層の光照射によって光起電力または導電
率の変化を発生する光電変換装置において、該非晶質半
導体層上に金属電極、絶縁保護膜、半田接合可能な金属
膜、及び耐熱保護膜を順次形成するとともに、該絶縁保
護膜には金属電極と半田接合可能な金属膜とを導通する
連通部が形成され、該耐熱保護膜には半田接合可能な金
属膜を露出し、半田層が設けられる開口部が形成されて
いる光電変換装置が提供される。[Specific Means for Solving the Problems] According to the present invention, in order to solve the above-mentioned problems, photovoltaic force or conductivity is generated by light irradiation of an amorphous semiconductor layer deposited on a substrate. In a photoelectric conversion device that generates a rate change, a metal electrode, an insulating protective film, a solderable metal film, and a heat-resistant protective film are sequentially formed on the amorphous semiconductor layer, and a metal electrode is formed on the insulating protective film. A photoelectric conversion device is provided, in which a communication portion is formed to conduct electrical connection between the heat-resistant protective film and a solderable metal film, and the heat-resistant protective film has an opening in which the solderable metal film is exposed and a solder layer is provided. be done.
以下、本発明の光電変換装置を図面に基づいて詳細に説
明する。Hereinafter, the photoelectric conversion device of the present invention will be explained in detail based on the drawings.
第１図は本発明の光電変換装置である光起電力装置の構
造を示す断面図である。FIG. 1 is a sectional view showing the structure of a photovoltaic device which is a photoelectric conversion device of the present invention.
本発明の光起電力装置は、透明絶縁基板１、透明電極２
、非晶質シリコンから成る非晶質半導体層３、金属電極
４、絶縁保護膜５、半田接合可能な金属膜６、及び耐熱
保護膜７とから構成され、前記透明電極２には出力端子
４１が形成されている延長部２１が形成されている。The photovoltaic device of the present invention includes a transparent insulating substrate 1, a transparent electrode 2
, an amorphous semiconductor layer 3 made of amorphous silicon, a metal electrode 4, an insulating protective film 5, a solderable metal film 6, and a heat-resistant protective film 7, and the transparent electrode 2 has an output terminal 41. An extension portion 21 is formed.
透明絶縁基板１はガラス、透光性セラミック、などが使
用されている。The transparent insulating substrate 1 is made of glass, translucent ceramic, or the like.
透明電極２は金属酸化物の透明導電膜で、透明絶縁基Ｆ
ｊ、１上に所定形状に形成されている。具体的には、こ
の透明電極２及び延長部２１は透明絶縁基板１の一主面
上にマスクを装着し、酸化錫、酸化インジウム、酸化イ
ンジウム錫などの透明導電膜を被着したり、絶縁基板１
の一主面上に酸化錫、酸化インジウム、酸化インジウム
錫などの透明導電膜を被着した後、レジスト・エツチン
グ処理したりして所定パターンに形成される。The transparent electrode 2 is a transparent conductive film made of metal oxide, and has a transparent insulating group F.
j, is formed in a predetermined shape on 1. Specifically, the transparent electrode 2 and the extension part 21 are formed by attaching a mask to one main surface of the transparent insulating substrate 1 and coating a transparent conductive film such as tin oxide, indium oxide, or indium tin oxide, or by applying an insulating film. Board 1
After a transparent conductive film of tin oxide, indium oxide, indium tin oxide, etc. is deposited on one main surface of the film, a predetermined pattern is formed by resist etching.
非晶質半導体層３は光照射により正孔、電子を発生する
ためにＰ−１−Ｎ接合されている。具体的には、非晶質
半導体層３はシリコン化合物ガスを主原料とするプラズ
マＣｖＤ法や光ＣＶＤ法等で被着される非晶質シリコン
などから成る。The amorphous semiconductor layer 3 is connected to a P-1-N junction in order to generate holes and electrons when irradiated with light. Specifically, the amorphous semiconductor layer 3 is made of amorphous silicon or the like deposited by a plasma CVD method or a photoCVD method using silicon compound gas as the main raw material.
金属電極４は非晶質半導体層とオーミンクコンタクト可
能な金属、例えばニッケル、アルミニウム、クロム、チ
タン等で形成され、非晶質半導体層３に所定形状に形成
されている。また、金属電極４と同時に透明電極の延長
部２１上に出力端子４１が形成されている。具体的には
、金属電極４及び出力端子４１は非晶質半導体層３及び
透明電極２上にマスクを装着し、上述の金属を抵抗加熱
法等の薄膜技法により被着したり、非晶質半導体層３及
び透明電極２の面上にアルニウム、ニッケル、チタン、
クロム等の金属膜を薄膜技法により被着した後、レジス
ト・エツチング処理したりして所定パターンに形成され
る。この金属電極４の膜厚は０．１〜１．０μｍである
。The metal electrode 4 is made of a metal capable of making ohmink contact with the amorphous semiconductor layer, such as nickel, aluminum, chromium, titanium, etc., and is formed in a predetermined shape on the amorphous semiconductor layer 3. Furthermore, an output terminal 41 is formed on the extension portion 21 of the transparent electrode at the same time as the metal electrode 4 . Specifically, the metal electrode 4 and the output terminal 41 are formed by attaching a mask to the amorphous semiconductor layer 3 and the transparent electrode 2, and depositing the above-mentioned metal by a thin film technique such as resistance heating, or Aluminum, nickel, titanium,
After a metal film such as chromium is deposited using a thin film technique, it is formed into a predetermined pattern by resist etching. The film thickness of this metal electrode 4 is 0.1 to 1.0 μm.
絶縁保護膜５は、少なくとも金属電極４及び出力端子４
１の一部を露出して金属膜６とを導通する連通部５１が
形成されるように、非晶質半導体層３、金属電極４及び
出力端子４１上を被い、形成される。具体的には、エポ
キシ樹脂、フェノール樹脂、アクリル樹脂等の絶縁樹脂
がスクリーン印刷法等の厚膜技法によって、膜厚１０〜
１００μｍで形成されたり、酸化シリコン、窒化シリコ
ン等の絶縁膜が薄膜技法によって形成される。The insulating protective film 5 covers at least the metal electrode 4 and the output terminal 4.
The amorphous semiconductor layer 3, the metal electrode 4, and the output terminal 41 are formed so as to expose a portion of the amorphous semiconductor layer 3, the metal electrode 4, and the output terminal 41 so as to form a communication portion 51 that is electrically connected to the metal film 6. Specifically, insulating resins such as epoxy resins, phenolic resins, and acrylic resins are coated with film thicknesses of 10 to 10% using thick film techniques such as screen printing.
The insulating film may be formed to have a thickness of 100 μm or may be made of silicon oxide, silicon nitride, or the like using a thin film technique.
半田接合可能な金属膜６は少なくとも前記絶縁保護膜５
から露出する金属電極４及び出力端子４１上に所定形状
に形成される。金属膜６は後工程の半田形成時に、半田
にこの金属膜６が食われない充分な厚みが必要であり、
且つ製造の容易さからスクリーン印刷法等の厚膜技法が
適している。The metal film 6 that can be soldered is at least the insulating protective film 5.
It is formed in a predetermined shape on the metal electrode 4 and output terminal 41 exposed from the top. The metal film 6 needs to have a sufficient thickness so that the metal film 6 will not be eaten away by solder during solder formation in the subsequent process.
In addition, thick film techniques such as screen printing are suitable for ease of manufacture.
材料として半田接合が可能であり、且つ金属電極４と低
抵抗で接合が可能な金属、例えば銅、銀、ニッケル、錫
等を樹脂溶液に分散させた導電ベーストを用いる。特に
前記絶縁保護膜５に樹脂を用いた場合、この金属膜６と
絶縁保護膜５との接着力が向上するからである。また、
製造上、絶縁保護膜５の硬化工程と金属膜６の硬化工程
とを同時に行え得るからである。該金属膜６は最低２．
３０μｍ程度の厚みと成るように形成することが重要で
ある。As a material, a conductive base is used in which a metal that can be soldered and can be joined to the metal electrode 4 with low resistance, such as copper, silver, nickel, tin, etc., is dispersed in a resin solution. This is because, especially when resin is used for the insulating protective film 5, the adhesive strength between the metal film 6 and the insulating protective film 5 is improved. Also,
This is because the curing process of the insulating protective film 5 and the curing process of the metal film 6 can be performed simultaneously in manufacturing. The metal film 6 has a minimum thickness of 2.
It is important to form it so that it has a thickness of about 30 μm.
耐熱保護膜７は、外部リード線や回路基板（いずれも図
示せず。）の接合を容易にする半田層８を金属膜６上の
所定位置に形成されるように制限するものであり、金属
膜６が所定位置に所定の大きさで露出する開口部７１．
７２が形成されている。具体的には、半田の融点温度で
ある１７０〜１８０°Ｃに耐え、半田と接合しない材料
であればよく、その形成方法も金属膜６や非晶質半導体
層３にダメージを与えない範囲で自由に設定できる。望
ましくは、絶縁保護膜５、金属膜６等と同様に耐熱の樹
脂ペーストでスクリーン印刷性テ形成すれば、製造上、
煩雑になることがなく、金属膜６と接着性が向上する。The heat-resistant protective film 7 restricts the solder layer 8, which facilitates the bonding of external lead wires and circuit boards (none of which are shown), to be formed at a predetermined position on the metal film 6. An opening 71 through which the membrane 6 is exposed at a predetermined position and with a predetermined size.
72 is formed. Specifically, any material that can withstand the melting point temperature of solder, 170 to 180°C, and does not bond with solder may be used, and the method of forming the material may be within a range that does not damage the metal film 6 or the amorphous semiconductor layer 3. Can be set freely. Preferably, if the insulating protective film 5, the metal film 6, etc. are formed using a heat-resistant resin paste with screen printing properties, it will be easier to manufacture.
It does not become complicated and the adhesion to the metal film 6 is improved.
上述の構成により、耐熱保護膜７の開口部７１．７２か
ら露出する金属膜６を出力端子として、外部リード線を
半田付けすることができるが、外部リード線の半田付け
を容易にし、さらにチップ部品として、直接回路基板に
実装できるように、予め該開口部７１．７２に半田層８
を形成することが極めて有益である。With the above-mentioned configuration, the metal film 6 exposed through the openings 71 and 72 of the heat-resistant protective film 7 can be used as an output terminal to which external lead wires can be soldered. A solder layer 8 is applied to the openings 71 and 72 in advance so that the component can be directly mounted on the circuit board.
It is extremely beneficial to form a
半田層８は、溶解した半田浴に上述の光起電力装置を浸
漬すればよく、耐熱保護膜７は半田を弾き、開口部７１
．７２のみに形成される。The solder layer 8 can be formed by immersing the above photovoltaic device in a melted solder bath, and the heat-resistant protective film 7 repels the solder and forms the opening 71.
．． 72 only.
上述の構成をした光起電力装置の半田層８部分に外部リ
ード線を半田付けし、該リード線を引っ張り、電極等の
剥離を調べた。尚、開口部７１．７２の大きさは２ｍｍ
Ｘ２ｍｍである。External lead wires were soldered to the solder layer 8 portion of the photovoltaic device configured as described above, and the lead wires were pulled to examine peeling of electrodes and the like. Furthermore, the size of the openings 71 and 72 is 2 mm.
It is x2mm.
その結果、光起電力装置の構成である透明電極２、非晶
質半導体層３、金属電極４、絶縁保護膜５、半田接合可
能な金属膜６、耐熱保護膜７及び半田層８の各接合界面
の剥離は全く生じず、１゜５〜３．０ｋｇ重の力（平均
２．０ｋｇ重の力）で外部リード線の切断や、半田層８
から抜けが生じるだけであった。しかも絶縁保護膜５の
連通部５１と耐熱保護膜７の開口部７２が重なり合う透
明電極２例の半田層８でも同様の結果が得られた。As a result, each of the transparent electrode 2, amorphous semiconductor layer 3, metal electrode 4, insulating protective film 5, solderable metal film 6, heat-resistant protective film 7, and solder layer 8 that constitute the photovoltaic device is bonded. No peeling occurred at the interface, and a force of 1°5 to 3.0 kg (average force of 2.0 kg) was enough to cut the external lead wire or remove the solder layer 8.
There were only omissions. Furthermore, similar results were obtained for the solder layers 8 of two transparent electrodes in which the communicating portions 51 of the insulating protective film 5 and the openings 72 of the heat-resistant protective film 7 overlapped.
第２図は、耐熱保護膜７の開口部７１を透明電極２例の
開口部７２の近接した金属Ｎ６上に形成した実施例を示
す断面図である。FIG. 2 is a sectional view showing an example in which an opening 71 of a heat-resistant protective film 7 is formed on a metal N6 adjacent to an opening 72 of two transparent electrodes.
これにより、＋側の端子と一側の端子とを近接させるこ
とができ、外部リード線の半田付けが極めて容易となる
光起電力装置が達成される。As a result, a photovoltaic device is achieved in which the + side terminal and the one side terminal can be brought close to each other, and the external lead wire can be extremely easily soldered.
第３図は、金属電極４上に形成される絶縁保護膜５を非
晶質半導体層３又は透明電極２が形成されていない透明
基板１上にまで延出させ、この延出された絶縁保護膜５
上にまで金属層６を形成し、少なくとも非晶質半導体層
３が形成されていない部分で耐熱保護膜７の開口部７１
をした実施例を示す断面図である。FIG. 3 shows that the insulating protection film 5 formed on the metal electrode 4 is extended onto the transparent substrate 1 on which the amorphous semiconductor layer 3 or the transparent electrode 2 is not formed, and this extended insulating protection film 5 is formed on the metal electrode 4. membrane 5
The metal layer 6 is formed up to the top, and the opening 71 of the heat-resistant protective film 7 is formed at least in the part where the amorphous semiconductor layer 3 is not formed.
FIG. 3 is a sectional view showing an example in which
これにより、該耐熱保護膜７の開口部７１に半田層８を
形成する際、溶解した半田浴に非晶質半導体層３が形成
されていない部分だけを浸漬すればよく、非晶質半導体
層３に過剰な熱影響を与えず、迅速に製造可能な光起電
力装置が達成される。As a result, when forming the solder layer 8 in the opening 71 of the heat-resistant protective film 7, it is only necessary to immerse only the part where the amorphous semiconductor layer 3 is not formed in the melted solder bath, and the amorphous semiconductor layer A photovoltaic device is achieved that can be manufactured quickly without excessive thermal effects on the photovoltaic device.
第４図は本発明の光電変換装置である光センサーの断面
図である。尚、第１図の光起電力装置と同一構造部分は
同一符号で示す。FIG. 4 is a sectional view of an optical sensor which is a photoelectric conversion device of the present invention. Note that the same structural parts as those of the photovoltaic device shown in FIG. 1 are designated by the same reference numerals.
本発明の光センサーは、透明絶縁基板１、非晶質シリコ
ンから成る非晶質半導体層３、金属電極４ａ、４ｂ、絶
縁保護膜５、半田接合可能な金属膜６ａ、６ｂ、及び耐
熱保護膜７とから構成されている。The optical sensor of the present invention includes a transparent insulating substrate 1, an amorphous semiconductor layer 3 made of amorphous silicon, metal electrodes 4a and 4b, an insulating protective film 5, a solderable metal film 6a and 6b, and a heat-resistant protective film. It consists of 7.
透明絶縁基板１はガラス、透光性セラミック、などが使
用されている。The transparent insulating substrate 1 is made of glass, translucent ceramic, or the like.
非晶質半導体層３は、光照射の強度に応じて、導電率が
変化するものであり、１層のみの単層であったり、Ｐ−
Ｉ−Ｎ接合、Ｎ−Ｉ−Ｎ接合、Ｉ−Ｎ接合等の多層構造
している。The amorphous semiconductor layer 3 changes its electrical conductivity depending on the intensity of light irradiation, and may be a single layer or a P-
It has a multilayer structure such as an I-N junction, an N-I-N junction, and an I-N junction.
金属電極４ａ、４ｂは非晶質半導体層とオーミックコン
タクト可能な金属で形成され、非晶質半導体層３に所定
形状に形成されている。この金属電極４ａ、４ｂの膜厚
は０． １〜１． ０ｐｒｎである。The metal electrodes 4a and 4b are made of a metal that can make ohmic contact with the amorphous semiconductor layer, and are formed in a predetermined shape on the amorphous semiconductor layer 3. The film thickness of these metal electrodes 4a, 4b is 0. 1-1. It is 0prn.
絶縁保護膜５は、少なくとも金属電極４ａ、４ｂの一部
を露出して金属膜６ａ、６ｂとを導通する連通部５１ａ
、５１ｂが形成されるように、非晶質半導体層３、金属
電極４ａ、４ｂ上を被い、形成される。具体的には、エ
ポキシ樹脂、フェノール樹脂、アクリル樹脂等の絶縁樹
脂がスクリーン印刷法等の厚膜技法によって、膜厚１０
〜１００μｍで形成される。The insulating protective film 5 has a communication portion 51a that exposes at least a part of the metal electrodes 4a, 4b and connects the metal films 6a, 6b.
, 51b are formed so as to cover the amorphous semiconductor layer 3 and the metal electrodes 4a and 4b. Specifically, insulating resins such as epoxy resins, phenolic resins, and acrylic resins are coated with a film thickness of 10 mm using thick film techniques such as screen printing.
It is formed with a thickness of ~100 μm.
半田接合可能な金属膜６ａ、６ｂは、少なくとも前記絶
縁保護膜５から露出する金属電極４ａ。The metal films 6a and 6b that can be soldered are at least the metal electrodes 4a exposed from the insulating protective film 5.
４ｂ上に所定形状に形成される。金属膜６ａ、６ｂは金
属電極４ａ、４ｂと低抵抗で接合が可能な金属、例えば
銅、銀、ニッケル、錫等を樹脂溶液に分散させた導電ペ
ーストによって形成されている。4b in a predetermined shape. The metal films 6a and 6b are formed of a conductive paste in which a metal that can be bonded to the metal electrodes 4a and 4b with low resistance, such as copper, silver, nickel, and tin, is dispersed in a resin solution.
耐熱保護膜７は、回路基板（図示せず。）の接合を容易
にする半田層８を金属膜６ａ、６ｂ上の所定位置に形成
されるように制限するものであり、金属膜６が所定位置
に所定の大きさで露出する開口部７１ ａ、 ７ ｌ
ｂが形成されている。具体的には、半田の融点温度で
ある１７０〜１８０°Ｃに耐え、半田と接合しない材料
で形成される。The heat-resistant protective film 7 restricts the solder layer 8, which facilitates bonding of a circuit board (not shown), to be formed at a predetermined position on the metal films 6a, 6b. Openings 71a, 7l exposed at predetermined positions and with predetermined sizes
b is formed. Specifically, it is made of a material that withstands the melting point temperature of solder, 170 to 180°C, and does not bond with solder.
望ましくは、絶縁保護膜５、金属膜６ａ、６ｂ等と同様
に耐熱の樹脂ペーストでスクリーン印刷法で形成すれば
、製造上、煩雑になることがなく、金属膜６ａ、６ｂと
接着性が向上する。Preferably, if it is formed using a screen printing method using a heat-resistant resin paste in the same way as the insulating protective film 5, metal films 6a, 6b, etc., it will not be complicated in manufacturing and the adhesion to the metal films 6a, 6b will be improved. do.
半田層８は、溶解した半田浴に上述の光センサーを浸漬
すればよく、耐熱保護膜７は半田を弾き、開口部７１ａ
、７１ｂのみに形成される。The solder layer 8 can be formed by immersing the above-mentioned optical sensor in a melted solder bath, and the heat-resistant protective film 7 repels the solder and forms the opening 71a.
, 71b only.
上述の構成により、耐熱保護膜７の開口部７１２．７１
ｂから露出する金属膜６ａ、６ｂをバイアス電圧印加の
電極として、外部リード線を半田付けすることができる
が、特に本発明の光センサーは電子部品として直接回路
基板に実装できるチップ部品として使用でき、電極外の
外部衝撃に対しても極めて有益である。With the above configuration, the openings 712, 71 of the heat-resistant protective film 7
External lead wires can be soldered to the metal films 6a and 6b exposed from the metal films 6a and 6b as electrodes for applying a bias voltage, but in particular, the optical sensor of the present invention cannot be used as a chip component that can be directly mounted on a circuit board as an electronic component. , is also extremely beneficial against external shocks outside the electrode.
尚、上述の光センサーの実施例でも第２図のように耐熱
保護膜７の開口部７１ａ、７１ｂを互いに近接したり、
第３図のように非晶質半導体層３が形成されていない部
分に耐熱保護膜７の開口部７１ａ、７１ｂを形成したり
しても構わない。In addition, in the embodiment of the optical sensor described above, the openings 71a and 71b of the heat-resistant protective film 7 are placed close to each other as shown in FIG.
As shown in FIG. 3, openings 71a and 71b of the heat-resistant protective film 7 may be formed in portions where the amorphous semiconductor layer 3 is not formed.
以上のように、本発明は基板上に被着された非晶質半導
体層の光照射によって光起電力または導電率の変化を発
生する光電変換装置において、該非晶質半導体層上に金
属電極、絶縁保護膜、半田接合可能な金属膜、及び耐熱
保護膜を順次形成するとともに、該絶縁保護膜には金属
電極と半田接合可能な金属膜とを導通する連通部が形成
され、該耐熱保護膜には半田接合可能な金属膜を露出し
、半田層が設けられる開口部が形成されているため、半
田層の形成の際に、金属電極が半田に食われることが全
くなく、透明電極、非晶質半導体層、金属電極、絶縁保
護膜、半田接合可能な金属膜、耐熱保護膜及び半田層の
各接合界面の剥離は全く生じず、外部リード線を強固に
半田付は可能にしたり、回路基板に接着実装可能なチッ
プ部品としての光電変換装置ができる。As described above, the present invention provides a photoelectric conversion device that generates a photovoltaic force or a change in conductivity by irradiating an amorphous semiconductor layer deposited on a substrate with a metal electrode on the amorphous semiconductor layer. An insulating protective film, a solderable metal film, and a heat-resistant protective film are sequentially formed, and a communication portion is formed in the insulating protective film to conduct the metal electrode and the solderable metal film, and the heat-resistant protective film Since the opening is formed to expose the metal film that can be soldered and the solder layer is provided, the metal electrode will not be eaten by the solder when forming the solder layer, and the transparent electrode and non-transparent electrode will not be eaten by the solder. There is no peeling at the bonding interface between the crystalline semiconductor layer, metal electrode, insulating protective film, solderable metal film, heat-resistant protective film, and solder layer. A photoelectric conversion device can be created as a chip component that can be adhesively mounted on a substrate.
第１図は本発明の光電変換装置である光起電力装置の構
造を示す断面図である。第２図及び第３図は本発明の光
電変換装置である光起電力装置の他の実施例を示す部分
断面図である。第４図は本発明の光電変換装置である光
センサーの構造を示す断面図である。
第５図は従来の光起電力装置の構造を示す断面図である
。
１、、、、、、、、透明絶縁基板
２、、、、、、、、透明電極
３、、、、、、、、非晶質半導体層
４：４ａ：４ｂ 、 、 、 、 、金属電極５、、、
、、、、、絶縁保護膜
６：６ａ：６ｂ、、、金属膜
７、．００．、、、耐熱保護膜FIG. 1 is a sectional view showing the structure of a photovoltaic device which is a photoelectric conversion device of the present invention. FIGS. 2 and 3 are partial cross-sectional views showing other embodiments of the photovoltaic device which is the photoelectric conversion device of the present invention. FIG. 4 is a sectional view showing the structure of an optical sensor which is a photoelectric conversion device of the present invention. FIG. 5 is a sectional view showing the structure of a conventional photovoltaic device. 1. Transparent insulating substrate 2 Transparent electrode 3 Amorphous semiconductor layer 4:4a:4b Metal electrode 5 ,,,
, , , insulating protective film 6:6a:6b, ,metal film 7, . 00. ,,,Heat-resistant protective film
Claims (1)
光起電力または導電率の変化を発生する光電変換装置に
おいて、 前記非晶質半導体層上に金属電極、絶縁保護膜、半田接
合可能な金属膜、及び耐熱保護膜を順次形成するととも
に、該絶縁保護膜には金属電極と半田接合可能な金属膜
とを導通する連通部が形成され、該耐熱保護膜には半田
接合可能な金属膜を露出するように開口部が形成されて
いることを特徴とする光電変換装置。[Scope of Claims] A photoelectric conversion device that generates a photovoltaic force or a change in conductivity by light irradiation of an amorphous semiconductor layer deposited on a substrate, further comprising a metal electrode and an insulating layer on the amorphous semiconductor layer. A protective film, a solderable metal film, and a heat-resistant protective film are sequentially formed, and a communication portion is formed in the insulating protective film to connect the metal electrode and the solderable metal film. A photoelectric conversion device characterized in that an opening is formed to expose a metal film that can be soldered.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63046460A JPH01220477A (en) | 1988-02-29 | 1988-02-29 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63046460A JPH01220477A (en) | 1988-02-29 | 1988-02-29 | Photoelectric conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01220477A true JPH01220477A (en) | 1989-09-04 |
Family
ID=12747774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63046460A Pending JPH01220477A (en) | 1988-02-29 | 1988-02-29 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01220477A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04155972A (en) * | 1990-10-19 | 1992-05-28 | Taiyo Yuden Co Ltd | Photovoltaic device |
| US6888209B2 (en) * | 2002-09-20 | 2005-05-03 | Casio Computer Co., Ltd. | Semiconductor package and method of fabricating the same |
| JP2007317840A (en) * | 2006-05-25 | 2007-12-06 | Sanyo Electric Co Ltd | Photovoltaic device, and its manufacturing method |
-
1988
- 1988-02-29 JP JP63046460A patent/JPH01220477A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04155972A (en) * | 1990-10-19 | 1992-05-28 | Taiyo Yuden Co Ltd | Photovoltaic device |
| US6888209B2 (en) * | 2002-09-20 | 2005-05-03 | Casio Computer Co., Ltd. | Semiconductor package and method of fabricating the same |
| JP2007317840A (en) * | 2006-05-25 | 2007-12-06 | Sanyo Electric Co Ltd | Photovoltaic device, and its manufacturing method |
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