JP3573869B2 - Method for manufacturing photovoltaic device - Google Patents

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for manufacturing a photovoltaic device.
[0002]
[Prior art]
In a conventional method for manufacturing a photovoltaic device, a power generation region including a stacked body of a first electrode layer, a semiconductor photoactive layer, and a second electrode layer arranged in a central portion on a substrate and an outer peripheral portion on a substrate For example, a manufacturing method and a structure for dividing a non-power-generating region are disclosed in Japanese Patent Application Laid-Open No. 7-231015. The manufacturing method disclosed herein includes a step of forming a first conductive film constituting a first electrode layer on an insulating substrate, and a step of forming a lower outer peripheral groove for dividing the first conductive film inside the entire outer periphery of the substrate. Forming the first electrode layer in a divided manner, arranging an outer peripheral insulating member in the lower outer peripheral groove inside the entire outer periphery of the substrate, and forming a semiconductor photoactive layer on substantially the entire surface of the first conductive film. Forming a stacked body of the semiconductor film and the second conductive film forming the second electrode layer, and irradiating the outer peripheral insulating member with an energy beam from the direction in which the second electrode layer is exposed; Removing the semiconductor film and the second conductive film, forming an upper peripheral groove reaching the peripheral insulating member, and dividing and forming the semiconductor photoactive layer and the second electrode layer. In particular, the upper outer peripheral groove is formed immediately above the outer peripheral insulating member arranged in the lower outer peripheral groove.
[0003]
[Problems to be solved by the invention]
In this conventional manufacturing method, in the step of irradiating the energy beam onto the outer peripheral insulating member, the upper portion is not used due to an accidental excessive output of the energy beam or an uneven thickness of the semiconductor film and the second conductive film. The outer peripheral groove may penetrate the outer peripheral insulating member and reach the first electrode layer in the power generation area. In this case, the second electrode layer and the first electrode layer are brought into conduction, and a cell short occurs. Furthermore, moisture penetrates through the outer peripheral insulating member and passes through the upper outer peripheral groove reaching the first electrode layer, and the first electrode layer is corroded.
[0004]
The present invention has been made to solve such a problem. Even if the upper outer peripheral groove penetrates the outer peripheral insulating member, no cell short occurs and the photovoltaic device has high moisture resistance. It is an object of the present invention to provide a method for producing the same.
[0005]
[Means for Solving the Problems]
The main configuration of the method for manufacturing a photovoltaic device of the present invention is a method for manufacturing a photovoltaic device including a stacked body of a first electrode layer, a semiconductor photoactive layer, and a second electrode layer,
Forming a first conductive film constituting the first electrode layer on substantially the entire surface of the substrate having an insulating surface;
Forming a lower outer peripheral groove for dividing the first conductive film inside the entire outer periphery of the substrate on the insulating surface, and forming the first electrode layer separately;
A step of disposing an outer peripheral insulating member extending from the lower outer peripheral groove to the outer peripheral side of the substrate inside the entire outer periphery of the substrate;
Forming a laminate of a semiconductor film forming the semiconductor photoactive layer and a second conductive film forming a second electrode layer on substantially the entire surface of the first conductive film;
An energy beam is irradiated from a direction in which the second conductive film is exposed to a portion located on the outer peripheral side of the substrate from the lower outer peripheral groove on the outer peripheral insulating member, and the irradiated portion of the semiconductor film and the second conductive film are irradiated with the energy beam. Removing the film, forming an upper peripheral groove reaching the peripheral insulating member, and dividing and forming the semiconductor photoactive layer and the second electrode layer.
[0006]
【Example】
Hereinafter, a first embodiment of a method for manufacturing a photovoltaic device according to the present invention will be described in detail with reference to FIGS.
[0007]
First, in FIG. 1, reference numeral 10 denotes a substrate made of a flexible metal sheet such as stainless steel or aluminum and an insulating resin film such as polyimide formed thereon, or a film substrate made of a resin such as polyimide. . The substrate 10 is rectangular and may be translucent or non-translucent. Reference numerals 20a to 20c denote a power generation region formed of a laminate of a first electrode layer, a semiconductor photoactive layer, and a second electrode layer described later. Also, 20at and 20ct are left end and right end output terminal areas for taking out the output from the photovoltaic device.
[0008]
In the step shown in FIG. 1, conductive pastes 30ab and 30bc made of a silver paste or the like are arranged in parallel between the power generation regions 20a to 20c and the sides of the substrate 10. Then, also in the left and right output terminal regions 20at and 20ct, the strip-shaped conductive pastes 31 and 32 are arranged parallel to the side of the substrate 10. Here, the conductive pastes 30ab, 30bc, 31, 32 are powders of silver, nickel, aluminum or the like (particle diameter: about 3 to 7 μm) in a polyimide or phenolic binder, and are patterned by screen printing. It is fired at 250 to 300 ° C. and formed to have a height of about 10 to 50 μm and a width of about 0.2 to 0.6 mm.
[0009]
Next, a first conductive film 40 having a thickness of about 0.1 to 1.0 μm is formed on the entire surface of the substrate 10 including the conductive paste. As the first conductive film 40, a metal such as aluminum, titanium, and nickel is used.
[0010]
In the step shown in FIG. 2, first, the inside of each side of the substrate 10 is irradiated with an energy beam such as a laser beam or an electron beam to remove the irradiated portion of the first conductive film, and the lower peripheral groove 50 (width About 50 μm). In addition, the left side of the conductive pastes 30ab and 30bc and the left side of the conductive paste 32 between the respective power generation regions are irradiated with an energy beam such as a laser beam or an electron beam to remove the first conductive film in the irradiated portion. Grooves 51, 51 and terminal portion grooves 52 (width about 50 μm) are formed. As a result, the first electrode layers 40a to 40c corresponding to each power generation region are divided and formed.
[0011]
Next, the outer peripheral insulating member 60 extending from the lower outer peripheral groove 50 to the outer peripheral side of the substrate 10 is disposed inside the entire outer periphery of the substrate 10. Then, the inter-region insulating members 61, 61 and the insulating member 62 are also arranged in the inter-region grooves 51, 51 and the terminal portion groove 52, respectively. In addition, at the left end of each of the first electrode layers 40a to 40c, a divided insulating member 63 is arranged on each of them. These insulating members 61, 62 and 63 are made of polyimide or phenolic binder containing powder of an inorganic material such as silicon dioxide (particle diameter of about 1.5 to 7.0 μm). After the lining, it is dried at 250 to 300 ° C. to form a height of about 10 to 50 μm and a width of about 0.2 to 0.6 mm.
[0012]
The adhesion between the surface of the insulating resin and the first conductive film 40 made of a metal film is relatively small and easily peeled off. In this embodiment, since the outer peripheral insulating member 60 having good adhesion to the substrate 10 is formed directly on the substrate 10 by the lower outer peripheral groove 50 and is formed to extend outside the substrate 10, the power generation region The outer first conductive film is prevented from peeling off from the substrate 10.
[0013]
Then, a semiconductor film 70 (thickness of about 0.3 to 1.0 μm) in which amorphous silicon, amorphous silicon carbide, amorphous silicon germanium, or the like is laminated on pn or pin on almost the entire surface above the substrate 10 on the first electrode layer. And a second conductive film 80 (thickness of about 0.3 to 1.0 μm) made of a transparent conductive film such as zinc oxide (ZnO), indium tin oxide (ITO), and tin oxide (SnO ₂ ). .
[0014]
Next, in the step shown in FIG. 3, a portion of the outer peripheral insulating member 60 located on the outer peripheral side of the substrate 10 from the lower peripheral groove 50 on the outer peripheral insulating member 60 in the direction in which the second conductive film 80 is exposed, The semiconductor film 70 and the second conductive film 80 in the irradiated portion are removed by irradiating an energy beam to form an upper outer peripheral groove 90 (about 50 μm in width) reaching the outer peripheral insulating member 60. Similarly, from the direction in which the second conductive film 80 is exposed, a portion located above the divided insulating members 63... Is irradiated with an energy beam such as a laser beam or an electron beam, and the irradiated portion of the semiconductor film 70 is irradiated. Then, the second conductive film 80 is removed, and an upper groove 91 (about 50 μm in width) reaching the divided insulating member 63 is formed. The upper peripheral groove 90 and the upper groove 91 are divided into the semiconductor photoactive layers 70a to 70c and the second electrode layers 80a to 80c corresponding to the respective power generation regions. In addition, in the left end output terminal region 20at, a semiconductor layer 70at made of a semiconductor film material and a second electrode pad 80at made of a second conductive film material are formed separately. On the other hand, in the right end output terminal region 20ct, a semiconductor layer 70ct extending from the semiconductor photoactive layer 70c and a second electrode extension 80ct extending from the second electrode layer 80c are formed.
[0015]
Further, an energy beam such as a laser beam or an electron beam is applied to the portions located on the conductive pastes 30ab, 30bc, 31, and 32 from the exposed side of the second conductive film. Thereby, the conductive pastes 30ab, 30bc and the second electrode layers 80a, 80b are respectively welded and electrically connected, and the power generation regions 20a to 20c are connected in series. Further, in the left end output terminal region 20at, the conductive paste 31 and the second electrode pad 80at are electrically connected, so that the output from the first electrode layer 20a can be derived. Further, in the right end output terminal region 20ct, the conductive paste 32 is electrically connected to the second electrode extension 80ct, and the conductive paste 32 reduces the electric resistance at the output terminal and improves the current collection efficiency. I do.
[0016]
In the process shown in FIG. 4, a collector electrode 100 composed of a plurality of branch portions 101 parallel to the upper and lower sides of the substrate 10 and a trunk portion 102 continuous at the right end of the branch portions 101 is formed into a second electrode layer 80a. To 80c. The trunk portions 102 of these collector electrodes 100 are located above the conductive pastes 30ab, 30bc, and 32, respectively, and are arranged in parallel to the sides of the substrate 10 and have a band shape. Here, the trunk portion 102 of the collector electrode 100 located in the right end output terminal region 20ct functions as the output terminal 104. Further, in the left end output terminal region 20at, a band-shaped output terminal 103 made of a conductive paste is formed on the second electrode pad 80at above the conductive paste 31.
[0017]
Then, a copper paste (not shown) is arranged on one end on the output terminals 103 and 104 to facilitate soldering, and then solder-plated rectangular copper foils 105 and 106 are soldered.
[0018]
Next, a protective film of a thermoplastic resin having a thickness of about 25 to 1000 μm made of a light-transmitting polyethylene terephthalate film, a fluorine-based film, or the like is formed on substantially the entire surface above the substrate 10 on the second electrode layers 80 a to 80 c. 110 is formed via an adhesive layer (not shown) made of a thermoplastic resin. Then, a soldering iron is applied to the protective film 110 located on the copper foils 105 and 106 to melt the solder, so that holes 111 and 111 are opened in the protective film by heat, and solder is placed on the copper foils 105 and 106. Form a layer (not shown). The lead wires 120, 120 are soldered via this solder layer to complete the photovoltaic device.
[0019]
FIG. 5 shows a photovoltaic device manufactured according to a second embodiment of the present invention. The major difference from the first embodiment is that a circular substrate 15 is used, and has a similar manufacturing process. The components having the same names as those in the first embodiment indicate the same materials and the same manufacturing method, and a detailed description thereof will be omitted.
[0020]
On the circular substrate 15, power generation regions 25a to 25d arranged in the left-right direction, and approximately crescent-shaped left and right output terminal regions 21at and 21dt are arranged at the left and right ends in the arrangement direction.
[0021]
First, strip-shaped conductive pastes 35ab, 35bc, and 35cd are arranged between the power generation regions 25a to 25d in a direction orthogonal to the arrangement direction of the power generation regions. Then, strip-shaped conductive pastes 36 and 37 are similarly arranged in the left and right output terminal regions 25at and 25dt. Thereafter, a first conductive film 45 is formed on the entire surface above the substrate 15 including the conductive paste.
[0022]
In the next step, first, the inside of the outer periphery of the substrate 15 is irradiated with an energy beam to remove the irradiated portion of the first conductive film 45 and form the lower outer peripheral groove 55. In addition, an energy beam is irradiated to the left side of the conductive pastes 35ab, 35bc, 35cd and the left side of the conductive paste 37 between the power generation regions to remove the irradiated portions of the first conductive film. A terminal groove 57 is formed. Thereby, the first electrode layers 45a to 45d corresponding to the respective power generation regions are formed separately.
[0023]
Then, the outer peripheral insulating member 65 extending from the lower outer peripheral groove 55 to the outer peripheral side of the substrate 15 is disposed inside the entire outer periphery of the substrate 15. Then, the inter-region insulating members 66, 66, and the insulating member 67 are also arranged in the inter-region grooves 56, 56 and the terminal portion groove 57, respectively. In addition, at the left end of each of the first electrode layers 45a to 45d, a divided insulating member 68 is arranged on each of them. After that, the semiconductor film 75 and the second conductive film 85 are formed on substantially the entire surface above the substrate 15.
[0024]
In the next step, a part of the outer peripheral insulating member 65 located on the outer peripheral side of the substrate 15 from the lower outer peripheral groove 55 is irradiated with an energy beam from the direction in which the second conductive film 85 is exposed. The film 75 and the second conductive film 85 are removed, and an upper peripheral groove 95 reaching the peripheral insulating member 65 is formed. Similarly, from the direction in which the second conductive film 85 is exposed, a portion located above the divided insulating members 68... Is irradiated with an energy beam, so that the irradiated portions of the semiconductor film 75 and the second conductive film 85 are exposed. By removing, the upper groove 96 reaching the divided insulating member 68 is formed. Then, the upper peripheral groove 95 and the upper groove 96 divide and form the semiconductor photoactive layers 75a to 75d and the second electrode layers 85a to 85d corresponding to the respective power generation regions. In addition, in the left end output terminal region 25at, a semiconductor layer 75at made of a semiconductor film material and a second electrode pad 85at made of a second conductive film material are formed separately. On the other hand, in the right end output terminal region 25dt, a semiconductor layer 75dt extending from the semiconductor photoactive layer 75d and a second electrode extension 85dt extending from the second electrode layer 85d are formed.
[0025]
Further, from the exposed side of the second conductive film, the portions located on the conductive pastes 35ab, 35bc, 35cd, 36, 37 are irradiated with an energy beam. Thereby, the conductive pastes 35ab, 35bc, 35cd and the second electrode layers 85a, 85b, 85c are respectively welded and electrically connected, and the power generation regions 25a to 25d are connected in series. In the left end output terminal region 25at, the conductive paste 36 and the second electrode pad 85at are electrically connected, and the output from the first electrode layer 25a can be derived. Further, in the right end output terminal region 25dt, the conductive paste 37 is electrically connected to the second electrode extension portion 85dt, and the conductive paste 37 reduces the electric resistance in the output terminal region, thereby improving the current collection efficiency. improves.
[0026]
In the next step, a collector electrode 105 composed of a plurality of branch portions 106 parallel to the direction of arrangement of the power generation regions and a trunk portion 107 continuous at the right end of the branch portions 106 is formed into second electrode layers 85a to 85d. Formed on each. Here, the trunk portion of the collector 105 located in the right end output terminal region 25dt functions as the output terminal 109. In the left end output terminal region 25at, an output terminal 108 made of a conductive paste is formed on the second electrode pad 85at on the conductive paste 36.
[0027]
Then, a copper paste (not shown) is arranged at the center of the output terminals 108 and 109 to facilitate soldering, and then solder-plated rectangular copper foils 115 and 116 are soldered.
[0028]
Further, a protective film 120 made of a translucent thermoplastic resin film is provided on substantially the entire surface above the substrate 11 on the second electrode layers 85a to 85d via an adhesive layer (not shown) made of a thermoplastic resin. Form. Then, a soldering iron is applied to the protective film 120 located on the copper foils 115 and 116 to melt the solder, thereby opening holes 121 and 121 in the protective film by heat, and soldering on the copper foils 115 and 116. Form a layer (not shown). The lead wires 130, 130 are soldered via this solder layer, and the photovoltaic device is completed.
[0029]
FIG. 6 is a diagram showing the shape of the upper outer peripheral groove 95 when a pulse oscillation YAG laser is used as an energy beam in the second embodiment. As shown in the figure, a circular removal can be performed by one pulse, and a circular upper peripheral groove 95 is formed by scanning a YAG laser beam in a circular shape. Here, when the YAG laser beam is scanned in a circular shape, the scanning speed is reduced as compared with the case of linearly scanning, and the area of a portion where each pulse overlaps is increased. As described above, when the area of the portion where the pulse overlaps increases, the area receiving the pulsed laser irradiation more than twice increases, so that the upper outer peripheral groove 95 can penetrate the outer insulating member 65 accordingly. More. Therefore, when the upper peripheral groove is formed by circularly scanning the pulse oscillation YAG laser, it is particularly important to prevent the cell short using the configuration of the present invention.
[0030]
In both of the above embodiments, since the film is disposed on the surface of the photovoltaic device, in the case of actual long-term use, moisture enters from between the layers (or films) on the outer peripheral portion of the substrate. . However, in the present invention, since the outer peripheral insulating member has a wide shape extending from the lower outer peripheral groove to the outer peripheral side of the substrate, moisture from the outer periphery of the substrate reaches the first electrode layer in the power generation region. Can be sufficiently prevented.
[0031]
Further, the outer peripheral insulating member is obtained by mixing a powder made of an insulating material into a binder and firing after arranging the pattern on the substrate. After firing, it is a porous member when viewed microscopically. Therefore, in long-term use, moisture may enter into the porous outer insulating member located below the upper outer circumferential groove and reach the power generation region. However, the upper peripheral groove is formed on the outer peripheral side of the substrate from the first electrode layer in the power generation region, and the outer peripheral insulating member has a wide shape extending from the lower outer peripheral groove to the outer peripheral side of the substrate. In addition, it is possible to sufficiently prevent moisture entering from the upper peripheral groove from reaching the first electrode layer in the power generation region.
[0032]
In both embodiments, the second electrode layer and the protective film are transparent and light is incident from this side. However, the first electrode layer and the substrate are transparent and light is incident from this side. Is also good.
[0033]
【The invention's effect】
The method for manufacturing a photovoltaic device according to the present invention has the above configuration. In the step of irradiating the outer peripheral insulating member with the energy beam, an accidental excess of the energy beam output or a film thickness of the semiconductor film and the second conductive film is generated. Even if the upper outer peripheral groove penetrates the outer peripheral insulating member due to non-uniformity or the like, since the upper outer peripheral groove is formed on the outer peripheral side of the substrate from the first electrode layer in the power generation area, The first electrode layer and the second electrode layer do not become conductive.
[0034]
Since the upper outer peripheral groove is formed on the outer peripheral side of the substrate with respect to the first electrode layer in the power generation region, moisture entering through the upper outer peripheral groove does not directly reach the first electrode layer. Is improved.
[0035]
Further, since the outer peripheral insulating member has a wide shape extending from the lower outer peripheral groove to the outer peripheral side of the substrate, moisture from the outer periphery of the substrate or from the upper outer peripheral groove reaches the first electrode layer in the power generation region. Can be sufficiently prevented.
[0036]
Further, since the outer peripheral insulating member is formed directly on the substrate by filling the lower outer peripheral groove, and is formed so as to extend to the outer peripheral side of the substrate, the first conductive film outside the power generation region is separated from the substrate. Can be prevented. Along with this, it is possible to prevent water from entering the power generation region caused by peeling of the first electrode film outside the power generation region.
[Brief description of the drawings]
1A and 1B are diagrams showing a first step in one embodiment of the present invention, wherein FIG. 1A is a plan view, FIG. 1B is a cross-sectional view taken along the line AA in FIG. It is -B sectional drawing.
2 (a) is a plan view, FIG. 2 (b) is a sectional view taken along the line AA in FIG. 2 (a), and FIG. It is -B sectional drawing.
3A and 3B are views showing a third step in one embodiment of the present invention, wherein FIG. 3A is a plan view, FIG. 3B is a cross-sectional view taken along the line AA in FIG. It is -B sectional drawing.
4A and 4B are diagrams showing a fourth step in one embodiment of the present invention, wherein FIG. 4A is a plan view, FIG. 4B is a cross-sectional view taken along line AA in FIG. It is -B sectional drawing.
5A and 5B are diagrams showing a photovoltaic device manufactured according to another embodiment of the present invention, wherein FIG. 5A is a plan view, FIG. 5B is a cross-sectional view taken along the line AA in FIG. It is BB sectional drawing in a).
FIG. 6 is an enlarged view of the outer peripheral portion of the substrate of FIG.
[Explanation of symbols]
Reference Signs List 10 substrate 20a to 20c power generation region 40 first conductive film 40a to 40c first electrode layer 50 lower outer peripheral groove 51 inter-region groove 60 outer peripheral insulating member 63 divided insulating member 70 semiconductor films 70a to 70c semiconductor optical active layer 80 second conductive film 80a to 80c Second electrode layer 90 Upper peripheral groove 91 Upper groove

Claims (3)

A method for manufacturing a photovoltaic device comprising a laminate of a first electrode layer, a semiconductor photoactive layer, and a second electrode layer,
Forming a first conductive film constituting the first electrode layer on substantially the entire surface of the substrate having an insulating surface;
Forming a lower outer peripheral groove for dividing the first conductive film inside the entire outer periphery of the substrate on the insulating surface, and forming the first electrode layer separately;
A step of disposing an outer peripheral insulating member extending from the lower outer peripheral groove to the outer peripheral side of the substrate inside the entire outer periphery of the substrate;
Forming a laminate of a semiconductor film forming the semiconductor photoactive layer and a second conductive film forming a second electrode layer on substantially the entire surface of the first conductive film;
An energy beam is irradiated from a direction in which the second conductive film is exposed to a portion located on the outer peripheral side of the substrate from the lower outer peripheral groove on the outer peripheral insulating member, and the irradiated portion of the semiconductor film and the second conductive film are irradiated with the energy beam. Removing the film, forming an upper peripheral groove reaching the peripheral insulating member, and dividing and forming the semiconductor photoactive layer and the second electrode layer. Method. A method for manufacturing a photovoltaic device in which a plurality of power generation regions including a stacked body of a first electrode layer, a semiconductor photoactive layer, and a second electrode layer are electrically connected,
Forming a first conductive film constituting the first electrode layer on substantially the entire surface of the substrate having an insulating surface;
On the insulating surface, a lower peripheral groove for dividing the first conductive film is formed inside the entire outer periphery of the substrate, and an inter-region groove for dividing the first conductive film is formed between the power generation regions. A step of dividing and forming a first electrode layer corresponding to each power generation region;
A step of disposing an outer peripheral insulating member extending from the lower outer peripheral groove to the outer peripheral side of the substrate inside the entire outer periphery of the substrate, and disposing a divided insulating member on the first electrode layer in parallel with the inter-region groove;
Forming a laminate of a semiconductor film forming the semiconductor photoactive layer and a second conductive film forming the second electrode layer on substantially the entire surface of the first conductive film;
From the exposure direction of the second conductive film, irradiating an energy beam to a portion located on the outer peripheral side of the substrate from the lower outer peripheral groove on the outer peripheral insulating member and a portion located on the inter-region insulating member, The semiconductor film and the second conductive film in an irradiated portion are removed, and an upper peripheral groove reaching the peripheral insulating member and an upper groove reaching the inter-region insulating member are formed, and the semiconductor corresponding to each power generation region is formed. Dividing the photoactive layer and the second electrode layer and electrically connecting the adjacent first and second electrode layers to electrically connect the plurality of power generation regions. A method for manufacturing a photovoltaic device, comprising: A method for manufacturing a photovoltaic device in which a plurality of power generation regions including a stacked body of a first electrode layer, a semiconductor photoactive layer, and a second electrode layer are provided on a substrate having an insulating surface, and the stacked bodies are electrically connected. And
Forming a first conductive film constituting a first electrode layer on substantially the entire surface of the insulating surface;
On the insulating surface, a lower outer peripheral groove for dividing the first conductive film is formed inside the outer periphery of the substrate along the arrangement direction of the plurality of power generation regions, and the first conductive groove is formed between the power generation regions. Forming an inter-region groove for dividing the film, and forming a first electrode layer corresponding to each of the power generation regions;
Disposing an outer peripheral insulating member extending from the lower outer peripheral groove to the outer peripheral side of the substrate inside the entire outer periphery of the substrate, and disposing a divided insulating member on the first electrode layer in parallel with the inter-region groove; ,
Forming a laminate of a semiconductor film forming the semiconductor photoactive layer and a second conductive film forming the second electrode layer on substantially the entire surface of the first conductive film;
From the exposure direction of the second conductive film, irradiating an energy beam to a portion located on the outer peripheral side of the substrate from the lower outer peripheral groove on the outer peripheral insulating member and a portion located on the inter-region insulating member, The exposed portion of the semiconductor photoactive layer and the second conductive film were removed, and an upper peripheral groove reaching the peripheral insulating member and an upper groove reaching the inter-region insulating member were formed to correspond to each power generation region. Dividing the semiconductor photoactive layer and the second electrode layer; and electrically connecting the adjacent first and second electrode layers to electrically connect the plurality of power generation regions. A method for manufacturing a photovoltaic device, comprising:

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