JPH03124067A - Photovoltaic device and its manufacture - Google Patents
Photovoltaic device and its manufactureInfo
- Publication number
- JPH03124067A JPH03124067A JP1262639A JP26263989A JPH03124067A JP H03124067 A JPH03124067 A JP H03124067A JP 1262639 A JP1262639 A JP 1262639A JP 26263989 A JP26263989 A JP 26263989A JP H03124067 A JPH03124067 A JP H03124067A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode layer
- conductive
- laser beam
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000000956 alloy Substances 0.000 claims abstract description 7
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 7
- 238000010248 power generation Methods 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000000059 patterning Methods 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000011230 binding agent Substances 0.000 claims description 2
- 239000000945 filler Substances 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 238000002844 melting Methods 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 2
- 230000005611 electricity Effects 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 8
- 239000011521 glass Substances 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000003869 coulometry Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、太陽電池や光センサ等に用いられる光起電力
装置に係り、特に薄いフィルム状の複数個の発電区域な
直列接続した光起電力装置およびその製造方法に関する
。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a photovoltaic device used for solar cells, optical sensors, etc. The present invention relates to a power device and its manufacturing method.
従来、太陽電池や光センサ等として用いられているフィ
ルム状半導体導電性モジュールは限られたスペース内で
より多くの光線を受けて、それを電気エネルギーに変換
するために、多数の発電区域をもつ素子を平面状に配置
し、これら多数の発電区域を直列接続した薄いフィルム
状のものが利用されている。Conventionally, film-type semiconductor conductive modules used as solar cells, optical sensors, etc. have a large number of power generation areas in order to receive as much light as possible within a limited space and convert it into electrical energy. A thin film-like device is used in which elements are arranged in a plane and a large number of power generation areas are connected in series.
第３図は、絶縁性基板上に透明電量層、非晶質半導体層
としての非晶質シリコン（以下ａ−３ｉと記す）層及び
裏面電極層としての導電性印刷電極層を積層してなる単
位太陽電池素子が直列接続されたａ−３ｉ太陽電池の構
成図である。このａＳｉ太陽電池は、１枚のカラス基板
１上に透明電極層２（２１〜２３）、ａ−８ｉ層３（３
１〜３３）、導電性印刷電極層４（４１〜４３）が積層
されて複数の単位太陽電池素子が形成されており、この
単位太陽電池素子は当該素子の導電性印刷電極層を隣接
素子の透明電極層に接触するようにして直列接続されて
いる。Figure 3 shows a structure in which a transparent coulometric layer, an amorphous silicon (hereinafter referred to as a-3i) layer as an amorphous semiconductor layer, and a conductive printed electrode layer as a back electrode layer are laminated on an insulating substrate. FIG. 2 is a configuration diagram of an a-3i solar cell in which unit solar cell elements are connected in series. This aSi solar cell has transparent electrode layers 2 (21 to 23), a-8i layer 3 (3
1 to 33), conductive printed electrode layers 4 (41 to 43) are stacked to form a plurality of unit solar cell elements, and this unit solar cell element connects the conductive printed electrode layer of the element to the adjacent element. They are connected in series so as to be in contact with the transparent electrode layer.
この種の太ＩＩ％電池は、先ずガラス基板１上に■Ｔ○
（インジウムスズ酸化物）、５ｎＯｚ（酸化スズ）等の
透明電導膜を電子ビーム蒸着、スパッタリングあるいは
熱ＣＶＤ法で５００−１００００八程度の厚さに一面に
形成する。そして、透明ｔｉ層２は透明電導膜をレーザ
ビームを用いてパターニングするか、あるいはフォトリ
ングラフィ法を用いてフォトレジストパターンを形成し
、エツチングすることにより形成される。This type of thick II% battery is manufactured by first placing ■T○ on a glass substrate 1.
A transparent conductive film of 5 nOz (indium tin oxide), 5 nOz (tin oxide), etc. is formed over one surface by electron beam evaporation, sputtering, or thermal CVD to a thickness of about 500 to 10,000 mm. The transparent Ti layer 2 is formed by patterning a transparent conductive film using a laser beam or by forming a photoresist pattern using a photolithography method and etching it.
次に、ａ−８ｉ層は１、透明型（々１層２側から、例え
ばｐ形ａ−３ｉ層を厚さ約２００＾、ノンドーフ゛ａＳ
ｉ層を厚さ０ 、２−１ μｍ、■〕形ａ−８ｉＪｔ４
を厚さ約５０ＯＡにシランガスのプラズマ放電分解で成
長させて形成する。なお、ｎ形はほう素、炭素、ｎ形は
燐をぞれぞれ添加する。このａ−３ｉ層をレーザビーム
によりパターニングして領域３１．３２．３３に分割す
る。次いで、印刷法によりパターン化された導電性裏面
電極層４を印刷して太陽電池を形成する。Next, the a-8i layer is 1, a transparent type (from the layer 2 side, for example, a p-type a-3i layer with a thickness of about 200^, and a non-doped aS
The thickness of the i layer is 0, 2-1 μm, ■] type a-8iJt4
is grown to a thickness of about 50 OA by plasma discharge decomposition of silane gas. Note that boron and carbon are added to the n-type, and phosphorus is added to the n-type. This a-3i layer is patterned with a laser beam and divided into regions 31, 32, and 33. Next, a patterned conductive back electrode layer 4 is printed by a printing method to form a solar cell.
透明電導膜のパターニングの際に使用している波長１．
０６μｍのＹＡＧレザービームを用いてａ−３ｉ層をパ
ターニングしようとすると、ａ −８ｉ層の吸収率が低
いためレーザパワーを大きくする必要があり、このため
ａ−３ｉ層がパターン化された時、第３図に示す透明電
極層のレーザ露光部２６．２７の部分で損傷を受ける。Wavelengths used in patterning transparent conductive films1.
When attempting to pattern the a-3i layer using a 06 μm YAG laser beam, it is necessary to increase the laser power because the absorption rate of the a-8i layer is low, so when the a-3i layer is patterned, The laser exposed portions 26 and 27 of the transparent electrode layer shown in FIG. 3 are damaged.
これを解決するため、従来の方法ではａ−３ｉ層がよく
吸収する波長０．５３μｍのＹＡＧレーザを用いていた
。したがって、従来のパターニングにおいては、透明電
導膜とａ−８ｉ層に適した波長か出力できるよう構成し
なければならず、装置が複雑化になると共に、ａ−３ｉ
ｌの表面状態によっても反射率が異なるため、再現性が
よくないという問題があった。To solve this problem, the conventional method uses a YAG laser with a wavelength of 0.53 μm, which is well absorbed by the a-3i layer. Therefore, in conventional patterning, a structure must be configured to output a wavelength suitable for the transparent conductive film and the A-8i layer, which complicates the equipment and also
Since the reflectance varies depending on the surface condition of l, there is a problem in that reproducibility is poor.
本発明の目的は、透明電極層と導電性印刷電極層とを接
続する導電性通路を、ａ−９ｉ層の表面状態および膜厚
に影響されることなく形成することができる光起電力装
置の製造方法を提供することにある。An object of the present invention is to provide a photovoltaic device in which a conductive path connecting a transparent electrode layer and a conductive printed electrode layer can be formed without being affected by the surface condition and film thickness of the a-9i layer. The purpose is to provide a manufacturing method.
また他の目的は、信頼性が高くかつ安定した特性をもつ
光起電力装置を提供することにある。Another object is to provide a photovoltaic device with high reliability and stable characteristics.
上記の目的を達成するために、本発明の光起電力装置の
製造方法は、絶縁性透明基板上に間隔を介して複数の透
明電極層を設け、その上に非晶質半導体層、パターン化
された導電性印刷電極層を積層して複数の発電区域を形
成した後、レーザビームを基板側から照射して前記透明
電極層、非結晶半導体及び導電性印刷電極層を加熱溶融
して得られる合金層からなる導電性通路を形成し、前記
各発電区域を直列接続するものである。In order to achieve the above object, the method for manufacturing a photovoltaic device of the present invention includes providing a plurality of transparent electrode layers at intervals on an insulating transparent substrate, and forming an amorphous semiconductor layer and a patterned layer on the transparent electrode layer. After laminating the conductive printed electrode layers to form a plurality of power generation areas, a laser beam is irradiated from the substrate side to heat and melt the transparent electrode layer, the amorphous semiconductor, and the conductive printed electrode layer. A conductive path made of an alloy layer is formed to connect the power generation sections in series.
上記導電性通路は、導電性印刷電極層を非貫通状態に形
成されている。The conductive path is formed so as not to penetrate the conductive printed electrode layer.
上記透明゛電導膜のパターニングおよび導電性通路の形
成には同一波長のレーザビームを用いられる。このレー
ザビームの波長は１．０６７１ｍである。A laser beam of the same wavelength is used for patterning the transparent conductive film and forming the conductive paths. The wavelength of this laser beam is 1.0671 m.
また本発明の光起電力装置は、絶縁性透明基板上に間隔
を介して設けられた複数の透明電極層と、透明電（支）
層を覆って設けられた非晶質半導体層と、非晶質半導体
層に積層され、かつ一部が隣接する透明電極層に非晶質
半導体層を介して重合するようにパターン化された導電
性印刷電極層とから成る複数の発電区域を有し、前記基
板側からレーザビームを照射して前記透明電極層、非結
晶半導体層および導電性印刷電極層を加熱溶融して得ら
れた合金層からなる導電性通路を、導電性印刷電極層を
非貫通状態で設け、該導電性通路により各発電区域が直
列接続されたものである。Further, the photovoltaic device of the present invention includes a plurality of transparent electrode layers provided at intervals on an insulating transparent substrate, and a transparent electrode (support).
an amorphous semiconductor layer provided to cover the layer, and a conductive layer laminated on the amorphous semiconductor layer and patterned so as to partially overlap with the adjacent transparent electrode layer via the amorphous semiconductor layer. the transparent electrode layer, the amorphous semiconductor layer, and the conductive printed electrode layer are heated and melted by irradiating a laser beam from the substrate side; A conductive passage consisting of a conductive printed electrode layer is provided without penetrating the conductive printed electrode layer, and each power generation area is connected in series by the conductive passage.
レーザビームを基板側から照射すると、各発電区域の透
明型ｔｆｉ層、ａ−３ｉ層及び隣接発電区域の導電性印
刷電極層まで加熱され、溶融した透明電極層と導電性印
刷裏面電極層から得られる合金層により導電性通路が形
成される。この導電性通路により各発電区域の透明電極
層と隣接発電区域の導電性印刷電極層とが一体的に結合
された太陽電池が構成される。上記方法でレーザビーム
を照射することにより、ａ−３ｉ層の表面状態および膜
厚に影響されることなく導電性通路を形成することかで
きる。また導電性印刷型ｔ４ｉＭが充分な厚みをもって
いるため、導電性通路はレーザビームのパワー調節によ
って導電性印刷電極層を貫通させないで形成することで
きるから、光起電力装置が再現性よく製造することがで
きる。更にレーザビームの波長として透明電極層のパタ
ーニングに適した１、０６μｍのみを用いているため、
装置構成が簡単になる。When the laser beam is irradiated from the substrate side, the transparent TFI layer and A-3I layer of each power generation area and the conductive printed electrode layer of the adjacent power generation area are heated, and the molten transparent electrode layer and the conductive printed back electrode layer are heated. A conductive path is formed by the alloy layer. This conductive path constitutes a solar cell in which the transparent electrode layer of each power generation area and the conductive printed electrode layer of the adjacent power generation area are integrally combined. By irradiating the laser beam with the above method, a conductive path can be formed without being affected by the surface condition and film thickness of the a-3i layer. Furthermore, since the conductive printed t4iM has a sufficient thickness, a conductive path can be formed without penetrating the conductive printed electrode layer by adjusting the power of the laser beam, so that the photovoltaic device can be manufactured with good reproducibility. I can do it. Furthermore, since only 1.06 μm, which is suitable for patterning the transparent electrode layer, is used as the wavelength of the laser beam,
Device configuration becomes simple.
第１図（ａ）−（ｄ）は本発明の光起電力装置の一実施
例として非晶質シリコン太陽電池の製造に関する工程図
である。なお、第３１．／Ｉに共通の部分には同一符号
が付されている。先ず、図（ａ）に示すように、ガラス
基板１上には熱ＣＶＤにより厚さ８００Ａに形成された
Ｓｎ○２からなる透明電導膜を波長が１．０６μｍのＹ
ＡＧレーザビームによりパターニングして透明電極層２
（２１〜２３）を形成する。次いで、図（ｂ）に示すよ
うにρｉ ｎ接合を有するａ−９ｉ層３をプラズマＣＶ
Ｄ法を用いて約０．８μｎ１の厚さに形成し、更に図（
ｃ）に示すように印刷法により導電性印刷電極層４（４
１〜４３）を１０〜３０μｍの厚さに形成する。この導
電性印刷電極屑４は隣接する透明電極層２に一部がａ−
３ｉ層３を介して重なるように形成されている。この重
なっている画電極層部分において単位太陽電池素子間の
接続か行われる。すなわち、この画電極層部分のガラス
基板側から１，０６波長のレーザビームを照射すると、
第２図に示すように、各発電区域の透明電極層２、ａ−
３ｉ層３及び隣接発電区域の導電性印刷電極層４が加熱
溶融して得られる合金層６からなる導電性通路５（５１
，５２）が形成される。この導電性通路５により導電性
印刷電極１１４１．４２がそれぞれ透明電極層２２．２
３と接続され、単位太陽電池素子を直列接続したａ−３
ｉ太陽電池が構成される。FIGS. 1(a) to 1(d) are process diagrams for manufacturing an amorphous silicon solar cell as an embodiment of the photovoltaic device of the present invention. In addition, No. 31. Components common to /I are given the same reference numerals. First, as shown in FIG.
The transparent electrode layer 2 is patterned with an AG laser beam.
(21-23) are formed. Next, as shown in FIG.
It was formed to a thickness of about 0.8μn1 using the D method, and further as shown in the figure (
As shown in c), a conductive printed electrode layer 4 (4
1 to 43) to a thickness of 10 to 30 μm. A portion of this conductive printed electrode scrap 4 is attached to the adjacent transparent electrode layer 2.
They are formed so as to overlap with each other with the 3i layer 3 in between. Connections between unit solar cell elements are made in this overlapping picture electrode layer portion. That is, when a laser beam of 1.06 wavelength is irradiated from the glass substrate side of this picture electrode layer part,
As shown in FIG. 2, the transparent electrode layer 2, a-
Conductive passages 5 (51
, 52) are formed. This electrically conductive path 5 connects the electrically conductive printed electrodes 1141.42 to the transparent electrode layer 22.2, respectively.
a-3, which is connected to 3 and has unit solar cell elements connected in series.
i A solar cell is constructed.
導電性印刷電極層の材質は、Ｎｉ粒を充填材、樹脂をバ
インダーとした１５０〜２００℃の低温で焼成できるペ
ーストが用いられる。The material used for the conductive printed electrode layer is a paste that can be fired at a low temperature of 150 to 200° C., which contains Ni particles as a filler and a resin as a binder.
本発明の光起電力装置を応用した太陽電池では、２００
１ｕｘの入射光に対して出力が７％以上の高効率が得ら
れた。In a solar cell to which the photovoltaic device of the present invention is applied, 200
High efficiency with an output of 7% or more was obtained for 1ux of incident light.
上述のとおり、本発明によれば、各発電区域を接続する
導電性通路を形成するのに、レーザビームを絶縁性透明
基板を通して照射するので、レーザビームのパワーが多
少大きくしても導電性印刷電極層に悪影響を与えること
なく、ａ−３ｉ層の表面状態および膜厚による反射率の
違いを解決でき、再現性よく光起電力装置を製造するこ
とができる。As described above, according to the present invention, a laser beam is irradiated through an insulating transparent substrate to form a conductive path connecting each power generation area, so even if the power of the laser beam is increased somewhat, conductive printing will not occur. Differences in reflectance due to the surface condition and film thickness of the a-3i layer can be resolved without adversely affecting the electrode layer, and a photovoltaic device can be manufactured with good reproducibility.
また単位太陽電池素子間を接続する導電性通路が基板側
からの照射によって得られた合金層で形成され、かつ外
部と接触しないため、光起電力装置の信頼性が向上する
と共に、安定がつ高効率の出力特性が得られる。In addition, the conductive paths connecting unit solar cell elements are formed of an alloy layer obtained by irradiation from the substrate side and do not come into contact with the outside, which improves the reliability and stability of the photovoltaic device. Highly efficient output characteristics can be obtained.
更に導電性通路の形成に透明電導膜のパターニングに適
した波長のレーザビームを使用するので、装置構成が簡
単になり、製造コストの低減が図れ第
■
図
る。Furthermore, since a laser beam with a wavelength suitable for patterning the transparent conductive film is used to form the conductive paths, the device configuration is simplified and manufacturing costs can be reduced.
第１図（ａ）〜（ｄ）は、本発明の光起電力装置の製造
方法の工程図、第２図は第１図（ｄ）の導電性通路部分
を拡大した断面図、第３図は従来の太陽電池の構成図で
ある。
１・・・ガラス基板、３・・・透明電極層、２（２１〜
２２ ） 、、、透明電極層、３ ・ａ −Ｓ ｉ層、
４（４１〜４３）・・・導電性印刷電極層、５（５１，
５２）・・導電性通路、６・・・合金層。1(a) to 1(d) are process diagrams of the method for manufacturing a photovoltaic device of the present invention, FIG. 2 is an enlarged sectional view of the conductive passage portion of FIG. 1(d), and FIG. 3 is a configuration diagram of a conventional solar cell. DESCRIPTION OF SYMBOLS 1... Glass substrate, 3... Transparent electrode layer, 2 (21-
22) , , transparent electrode layer, 3 ・a-Si layer,
4(41-43)...Conductive printed electrode layer, 5(51,
52)... Conductive path, 6... Alloy layer.
Claims (6)
層を設け、その上に非晶質半導体層、パターン化された
導電性印刷電極層を積層して複数の発電区域を形成した
後、レーザビームを基板側から照射して前記透明電極、
非結晶半導体及び導電性印刷電極を加熱溶融して得られ
る合金層からなる導電性通路を形成し、前記各発電区域
を直列接続する光起電力装置の製造方法。(1) A plurality of transparent electrode layers are provided at intervals on an insulating transparent substrate, and an amorphous semiconductor layer and a patterned conductive printed electrode layer are laminated thereon to form a plurality of power generation areas. After that, the transparent electrode is irradiated with a laser beam from the substrate side.
A method for manufacturing a photovoltaic device, which comprises forming a conductive path made of an alloy layer obtained by heating and melting an amorphous semiconductor and a conductive printed electrode, and connecting the power generation sections in series.
成されていることを特徴とする請求項１記載の製造方法
。(2) The manufacturing method according to claim 1, wherein the conductive path is formed so as not to penetrate the conductive printed electrode layer.
ンダーとしたペーストにより形成されていることを特徴
とする請求項１記載の製造方法。(3) The manufacturing method according to claim 1, wherein the conductive printed electrode layer is formed of a paste containing Ni particles as a filler and a resin as a binder.
成に同一波長のレーザビームを用いることを特徴とする
請求項１記載の製造方法。(4) The manufacturing method according to claim 1, wherein a laser beam having the same wavelength is used for patterning the transparent conductive film and forming the conductive path.
特徴とする請求項４記載の製造方法。(5) The manufacturing method according to claim 4, wherein the wavelength of the laser beam is 1.06 μm.
の透明電極層と、透明電極層を覆って設けられた非晶質
半導体層と、非晶質半導体層に積層され、かつ一部が隣
接する透明電極層に非晶質半導体層を介して重合するよ
うにパターニングされた導電性印刷電極層とから成る複
数の発電区域を有し、前記基板側からレーザビームを照
射して前記透明電極層、非結晶半導体層および導電性印
刷電極層を加熱溶融して得られた合金層からなる導電性
通路を、導電性印刷電極層を非貫通状態で設け、該導電
性通路により各発電区域が直列接続された光起電力装置
。(6) a plurality of transparent electrode layers provided at intervals on an insulating transparent substrate; an amorphous semiconductor layer provided covering the transparent electrode layer; The section has a plurality of power generation areas consisting of a conductive printed electrode layer patterned so as to be polymerized with an adjacent transparent electrode layer through an amorphous semiconductor layer, and a laser beam is irradiated from the substrate side to generate the electricity. A conductive path made of an alloy layer obtained by heating and melting a transparent electrode layer, an amorphous semiconductor layer, and a conductive printed electrode layer is provided without penetrating the conductive printed electrode layer, and each power generation is performed using the conductive path. A photovoltaic device with zones connected in series.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1262639A JPH03124067A (en) | 1989-10-07 | 1989-10-07 | Photovoltaic device and its manufacture |
| US07/593,838 US5133809A (en) | 1989-10-07 | 1990-10-05 | Photovoltaic device and process for manufacturing the same |
| DE69016910T DE69016910T2 (en) | 1989-10-07 | 1990-10-05 | Photovoltaic device and its manufacturing process. |
| EP90119098A EP0422511B1 (en) | 1989-10-07 | 1990-10-05 | Photovoltaic device and process for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1262639A JPH03124067A (en) | 1989-10-07 | 1989-10-07 | Photovoltaic device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03124067A true JPH03124067A (en) | 1991-05-27 |
Family
ID=17378579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1262639A Pending JPH03124067A (en) | 1989-10-07 | 1989-10-07 | Photovoltaic device and its manufacture |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5133809A (en) |
| EP (1) | EP0422511B1 (en) |
| JP (1) | JPH03124067A (en) |
| DE (1) | DE69016910T2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002527910A (en) * | 1998-10-12 | 2002-08-27 | パシフィック ソーラー ピー ティ ワイ リミテッド | Melt-through contact formation method |
| JP2010287800A (en) * | 2009-06-12 | 2010-12-24 | Tokki Corp | Apparatus and method for manufacturing organic device |
Families Citing this family (72)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4594471A (en) * | 1983-07-13 | 1986-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| JPH02268472A (en) * | 1989-04-10 | 1990-11-02 | Showa Shell Sekiyu Kk | Photovoltaic device and its manufacture |
| SE501723C2 (en) * | 1993-09-10 | 1995-05-02 | Ellemtel Utvecklings Ab | Optical amplification device and use of the device |
| SE501721C2 (en) * | 1993-09-10 | 1995-05-02 | Ellemtel Utvecklings Ab | Laser device with an optical cavity connected in series laser structures |
| SE501722C2 (en) * | 1993-09-10 | 1995-05-02 | Ellemtel Utvecklings Ab | Surface emitting laser device with vertical cavity |
| JPH11103079A (en) * | 1997-09-26 | 1999-04-13 | Sanyo Electric Co Ltd | Manufacture of laminated photovoltaic device |
| US6468828B1 (en) | 1998-07-14 | 2002-10-22 | Sky Solar L.L.C. | Method of manufacturing lightweight, high efficiency photovoltaic module |
| AU757536B2 (en) * | 1998-10-12 | 2003-02-27 | Csg Solar Ag | Melt through contact formation method |
| NL1012961C2 (en) * | 1999-09-02 | 2001-03-05 | Stichting Energie | A method of manufacturing a semiconductor device. |
| US20050247340A1 (en) * | 2004-04-19 | 2005-11-10 | Zeira Eitan C | All printed solar cell array |
| CN100536148C (en) * | 2004-06-04 | 2009-09-02 | 新南创新私人有限公司 | Thin-film solar cell interconnection |
| US8017860B2 (en) | 2006-05-15 | 2011-09-13 | Stion Corporation | Method and structure for thin film photovoltaic materials using bulk semiconductor materials |
| US9105776B2 (en) * | 2006-05-15 | 2015-08-11 | Stion Corporation | Method and structure for thin film photovoltaic materials using semiconductor materials |
| US8071179B2 (en) * | 2007-06-29 | 2011-12-06 | Stion Corporation | Methods for infusing one or more materials into nano-voids if nanoporous or nanostructured materials |
| US7919400B2 (en) * | 2007-07-10 | 2011-04-05 | Stion Corporation | Methods for doping nanostructured materials and nanostructured thin films |
| JP5458485B2 (en) * | 2007-09-25 | 2014-04-02 | 三洋電機株式会社 | Method for manufacturing solar cell and method for manufacturing solar cell module |
| US8287942B1 (en) | 2007-09-28 | 2012-10-16 | Stion Corporation | Method for manufacture of semiconductor bearing thin film material |
| US20090087939A1 (en) * | 2007-09-28 | 2009-04-02 | Stion Corporation | Column structure thin film material using metal oxide bearing semiconductor material for solar cell devices |
| US8058092B2 (en) | 2007-09-28 | 2011-11-15 | Stion Corporation | Method and material for processing iron disilicide for photovoltaic application |
| US8759671B2 (en) | 2007-09-28 | 2014-06-24 | Stion Corporation | Thin film metal oxide bearing semiconductor material for single junction solar cell devices |
| US8614396B2 (en) * | 2007-09-28 | 2013-12-24 | Stion Corporation | Method and material for purifying iron disilicide for photovoltaic application |
| US7998762B1 (en) | 2007-11-14 | 2011-08-16 | Stion Corporation | Method and system for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration |
| US8440903B1 (en) | 2008-02-21 | 2013-05-14 | Stion Corporation | Method and structure for forming module using a powder coating and thermal treatment process |
| US8772078B1 (en) | 2008-03-03 | 2014-07-08 | Stion Corporation | Method and system for laser separation for exclusion region of multi-junction photovoltaic materials |
| US8075723B1 (en) | 2008-03-03 | 2011-12-13 | Stion Corporation | Laser separation method for manufacture of unit cells for thin film photovoltaic materials |
| US7939454B1 (en) | 2008-05-31 | 2011-05-10 | Stion Corporation | Module and lamination process for multijunction cells |
| US8642138B2 (en) | 2008-06-11 | 2014-02-04 | Stion Corporation | Processing method for cleaning sulfur entities of contact regions |
| US9087943B2 (en) | 2008-06-25 | 2015-07-21 | Stion Corporation | High efficiency photovoltaic cell and manufacturing method free of metal disulfide barrier material |
| US8003432B2 (en) | 2008-06-25 | 2011-08-23 | Stion Corporation | Consumable adhesive layer for thin film photovoltaic material |
| US8207008B1 (en) | 2008-08-01 | 2012-06-26 | Stion Corporation | Affixing method and solar decal device using a thin film photovoltaic |
| TWI478359B (en) * | 2008-09-05 | 2015-03-21 | Semiconductor Energy Lab | Photoelectric conversion device |
| US7855089B2 (en) | 2008-09-10 | 2010-12-21 | Stion Corporation | Application specific solar cell and method for manufacture using thin film photovoltaic materials |
| US8501521B1 (en) | 2008-09-29 | 2013-08-06 | Stion Corporation | Copper species surface treatment of thin film photovoltaic cell and manufacturing method |
| US8394662B1 (en) | 2008-09-29 | 2013-03-12 | Stion Corporation | Chloride species surface treatment of thin film photovoltaic cell and manufacturing method |
| US8476104B1 (en) | 2008-09-29 | 2013-07-02 | Stion Corporation | Sodium species surface treatment of thin film photovoltaic cell and manufacturing method |
| US8008110B1 (en) | 2008-09-29 | 2011-08-30 | Stion Corporation | Bulk sodium species treatment of thin film photovoltaic cell and manufacturing method |
| US8008112B1 (en) | 2008-09-29 | 2011-08-30 | Stion Corporation | Bulk chloride species treatment of thin film photovoltaic cell and manufacturing method |
| US8236597B1 (en) | 2008-09-29 | 2012-08-07 | Stion Corporation | Bulk metal species treatment of thin film photovoltaic cell and manufacturing method |
| US8026122B1 (en) | 2008-09-29 | 2011-09-27 | Stion Corporation | Metal species surface treatment of thin film photovoltaic cell and manufacturing method |
| US7910399B1 (en) | 2008-09-30 | 2011-03-22 | Stion Corporation | Thermal management and method for large scale processing of CIS and/or CIGS based thin films overlying glass substrates |
| US8383450B2 (en) | 2008-09-30 | 2013-02-26 | Stion Corporation | Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials |
| US7863074B2 (en) | 2008-09-30 | 2011-01-04 | Stion Corporation | Patterning electrode materials free from berm structures for thin film photovoltaic cells |
| US7947524B2 (en) | 2008-09-30 | 2011-05-24 | Stion Corporation | Humidity control and method for thin film photovoltaic materials |
| US8425739B1 (en) | 2008-09-30 | 2013-04-23 | Stion Corporation | In chamber sodium doping process and system for large scale cigs based thin film photovoltaic materials |
| US8741689B2 (en) | 2008-10-01 | 2014-06-03 | Stion Corporation | Thermal pre-treatment process for soda lime glass substrate for thin film photovoltaic materials |
| US20110018103A1 (en) | 2008-10-02 | 2011-01-27 | Stion Corporation | System and method for transferring substrates in large scale processing of cigs and/or cis devices |
| US8435826B1 (en) | 2008-10-06 | 2013-05-07 | Stion Corporation | Bulk sulfide species treatment of thin film photovoltaic cell and manufacturing method |
| US8003430B1 (en) | 2008-10-06 | 2011-08-23 | Stion Corporation | Sulfide species treatment of thin film photovoltaic cell and manufacturing method |
| USD625695S1 (en) | 2008-10-14 | 2010-10-19 | Stion Corporation | Patterned thin film photovoltaic module |
| US8168463B2 (en) | 2008-10-17 | 2012-05-01 | Stion Corporation | Zinc oxide film method and structure for CIGS cell |
| US8344243B2 (en) | 2008-11-20 | 2013-01-01 | Stion Corporation | Method and structure for thin film photovoltaic cell using similar material junction |
| FR2939239B1 (en) | 2008-12-03 | 2010-12-31 | Ecole Polytech | PHOTOVOLTAIC MODULE COMPRISING A TRANSPARENT CONDUCTIVE ELECTRODE OF VARIABLE THICKNESS AND METHODS OF MANUFACTURING SUCH A MODULE |
| USD662040S1 (en) | 2009-06-12 | 2012-06-19 | Stion Corporation | Pin striped thin film solar module for garden lamp |
| USD628332S1 (en) | 2009-06-12 | 2010-11-30 | Stion Corporation | Pin striped thin film solar module for street lamp |
| USD632415S1 (en) | 2009-06-13 | 2011-02-08 | Stion Corporation | Pin striped thin film solar module for cluster lamp |
| USD652262S1 (en) | 2009-06-23 | 2012-01-17 | Stion Corporation | Pin striped thin film solar module for cooler |
| USD662041S1 (en) | 2009-06-23 | 2012-06-19 | Stion Corporation | Pin striped thin film solar module for laptop personal computer |
| US8507786B1 (en) | 2009-06-27 | 2013-08-13 | Stion Corporation | Manufacturing method for patterning CIGS/CIS solar cells |
| USD627696S1 (en) | 2009-07-01 | 2010-11-23 | Stion Corporation | Pin striped thin film solar module for recreational vehicle |
| US8398772B1 (en) | 2009-08-18 | 2013-03-19 | Stion Corporation | Method and structure for processing thin film PV cells with improved temperature uniformity |
| US8809096B1 (en) | 2009-10-22 | 2014-08-19 | Stion Corporation | Bell jar extraction tool method and apparatus for thin film photovoltaic materials |
| US8859880B2 (en) | 2010-01-22 | 2014-10-14 | Stion Corporation | Method and structure for tiling industrial thin-film solar devices |
| US8263494B2 (en) | 2010-01-25 | 2012-09-11 | Stion Corporation | Method for improved patterning accuracy for thin film photovoltaic panels |
| US9096930B2 (en) | 2010-03-29 | 2015-08-04 | Stion Corporation | Apparatus for manufacturing thin film photovoltaic devices |
| KR101807333B1 (en) | 2010-05-28 | 2017-12-08 | 프리솜 에이쥐 | Method and apparatus for thin film module with dotted interconnects and vias |
| US8563351B2 (en) * | 2010-06-25 | 2013-10-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for manufacturing photovoltaic device |
| US8461061B2 (en) | 2010-07-23 | 2013-06-11 | Stion Corporation | Quartz boat method and apparatus for thin film thermal treatment |
| US8628997B2 (en) | 2010-10-01 | 2014-01-14 | Stion Corporation | Method and device for cadmium-free solar cells |
| US8728200B1 (en) | 2011-01-14 | 2014-05-20 | Stion Corporation | Method and system for recycling processing gas for selenization of thin film photovoltaic materials |
| US8998606B2 (en) | 2011-01-14 | 2015-04-07 | Stion Corporation | Apparatus and method utilizing forced convection for uniform thermal treatment of thin film devices |
| US8436445B2 (en) | 2011-08-15 | 2013-05-07 | Stion Corporation | Method of manufacture of sodium doped CIGS/CIGSS absorber layers for high efficiency photovoltaic devices |
| WO2015114498A1 (en) | 2014-01-31 | 2015-08-06 | Flisom Ag | Method for thin-film via segments in photovoltaic device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US467567A (en) * | 1892-01-26 | Window-shade | ||
| JPS6289368A (en) * | 1985-10-16 | 1987-04-23 | Matsushita Electric Ind Co Ltd | Manufacture of solar cell device |
| JPS6450476A (en) * | 1987-08-20 | 1989-02-27 | Mitsubishi Electric Corp | Manufacture of thin film solar cell |
| JPS6454769A (en) * | 1987-08-26 | 1989-03-02 | Fuji Electric Res | Manufacture of amorphous silicon solar cell |
| JPH01124270A (en) * | 1987-11-09 | 1989-05-17 | Fuji Electric Co Ltd | Thin-film solar cell |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4517403A (en) * | 1983-05-16 | 1985-05-14 | Atlantic Richfield Company | Series connected solar cells and method of formation |
| US4724011A (en) * | 1983-05-16 | 1988-02-09 | Atlantic Richfield Company | Solar cell interconnection by discrete conductive regions |
| US4697041A (en) * | 1985-02-15 | 1987-09-29 | Teijin Limited | Integrated solar cells |
| JPS61280680A (en) * | 1985-05-10 | 1986-12-11 | Sanyo Electric Co Ltd | Manufacture of semiconductor device |
| US4675467A (en) * | 1986-04-05 | 1987-06-23 | Chronar Corp. | Directed energy conversion of semiconductor materials |
| US4936924A (en) * | 1987-08-20 | 1990-06-26 | Mitsubishi Denki Kabushiki Kaisha | Thin-film solar battery and its manufacturing method |
| JPS6461963A (en) * | 1987-09-02 | 1989-03-08 | Fuji Electric Co Ltd | Manufacture of solar cell |
| US4968354A (en) * | 1987-11-09 | 1990-11-06 | Fuji Electric Co., Ltd. | Thin film solar cell array |
-
1989
- 1989-10-07 JP JP1262639A patent/JPH03124067A/en active Pending
-
1990
- 1990-10-05 US US07/593,838 patent/US5133809A/en not_active Expired - Fee Related
- 1990-10-05 DE DE69016910T patent/DE69016910T2/en not_active Expired - Fee Related
- 1990-10-05 EP EP90119098A patent/EP0422511B1/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US467567A (en) * | 1892-01-26 | Window-shade | ||
| JPS6289368A (en) * | 1985-10-16 | 1987-04-23 | Matsushita Electric Ind Co Ltd | Manufacture of solar cell device |
| JPS6450476A (en) * | 1987-08-20 | 1989-02-27 | Mitsubishi Electric Corp | Manufacture of thin film solar cell |
| JPS6454769A (en) * | 1987-08-26 | 1989-03-02 | Fuji Electric Res | Manufacture of amorphous silicon solar cell |
| JPH01124270A (en) * | 1987-11-09 | 1989-05-17 | Fuji Electric Co Ltd | Thin-film solar cell |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002527910A (en) * | 1998-10-12 | 2002-08-27 | パシフィック ソーラー ピー ティ ワイ リミテッド | Melt-through contact formation method |
| JP2010287800A (en) * | 2009-06-12 | 2010-12-24 | Tokki Corp | Apparatus and method for manufacturing organic device |
Also Published As
| Publication number | Publication date |
|---|---|
| DE69016910D1 (en) | 1995-03-23 |
| US5133809A (en) | 1992-07-28 |
| EP0422511A2 (en) | 1991-04-17 |
| EP0422511B1 (en) | 1995-02-15 |
| DE69016910T2 (en) | 1995-07-20 |
| EP0422511A3 (en) | 1991-07-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH03124067A (en) | Photovoltaic device and its manufacture | |
| US4517403A (en) | Series connected solar cells and method of formation | |
| US4754544A (en) | Extremely lightweight, flexible semiconductor device arrays | |
| US6011215A (en) | Point contact photovoltaic module and method for its manufacture | |
| CN102971865A (en) | Solar cell module and method of manufacturing thereof | |
| EP0201312A2 (en) | Solar cell interconnection by discrete conductive regions | |
| US20110023962A1 (en) | Solar Cell Element and Solar Cell Module | |
| WO1994027327A1 (en) | Series interconnected photovoltaic cells and method for making same | |
| EP0189976A2 (en) | Extremely lightweight, flexible semiconductor device arrays and method of making same | |
| JP5377101B2 (en) | Solar cell element, solar cell module, and solar power generation device | |
| JPH04118975A (en) | Photovoltaic device and manufacture thereof | |
| JPH0476227B2 (en) | ||
| JP2000223728A (en) | Thin film solar battery module | |
| JP2598967B2 (en) | Method for manufacturing photovoltaic device | |
| JPS62242371A (en) | Manufacture of photovoltaic device | |
| JPH03196679A (en) | Manufacture of thin film solar battery | |
| JP3573869B2 (en) | Method for manufacturing photovoltaic device | |
| JP2726045B2 (en) | Light power generator | |
| JPS6265480A (en) | Thin film solar battery | |
| JP2001036104A (en) | Solar battery module | |
| JPH0669104B2 (en) | Photovoltaic device manufacturing method | |
| JP2819538B2 (en) | Method for manufacturing photovoltaic device | |
| JPH02106978A (en) | Manufacture of integrated type solar cell | |
| CN116471857A (en) | Perovskite laminated cell structure and production process thereof | |
| JPS63202078A (en) | Manufacture of photovoltaic device |