JPS6289368A - Manufacture of solar cell device - Google Patents
Manufacture of solar cell deviceInfo
- Publication number
- JPS6289368A JPS6289368A JP60230155A JP23015585A JPS6289368A JP S6289368 A JPS6289368 A JP S6289368A JP 60230155 A JP60230155 A JP 60230155A JP 23015585 A JP23015585 A JP 23015585A JP S6289368 A JPS6289368 A JP S6289368A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- amorphous
- layer
- solar cell
- alloy layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 6
- 238000009751 slip forming Methods 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 14
- 229910052751 metal Inorganic materials 0.000 abstract description 12
- 239000002184 metal Substances 0.000 abstract description 12
- 239000000956 alloy Substances 0.000 abstract description 8
- 229910045601 alloy Inorganic materials 0.000 abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- 229910003437 indium oxide Inorganic materials 0.000 abstract description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001887 tin oxide Inorganic materials 0.000 abstract description 3
- 229910052719 titanium Inorganic materials 0.000 abstract description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 3
- 230000007547 defect Effects 0.000 abstract 1
- 238000003466 welding Methods 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は複数個の太陽電池素子の接続法に関するもので
、特に同一基板上に形成した複数個の独立した太陽電池
を電気的に直列に接続した太陽電２ペーノ
池装置の製造法に関するものである。[Detailed Description of the Invention] Industrial Application Field The present invention relates to a method for connecting a plurality of solar cell elements, and particularly relates to a method for connecting a plurality of independent solar cells formed on the same substrate in electrical series. The present invention relates to a method for manufacturing a solar cell device.
従来の技術
従来の、この種の電気的当接法を、第２図に示す太陽電
池の斜視図により説明する。透光性絶縁基板２１の上面
に、第１電極として酸化インジウム又は酸化錫などの透
光性導電膜２２を形成し、その上に金属電極２６を設け
、その上にアモルファスＳｉを主成分とする半導体膜２
３を連続して形成し、更にその上に第２電極としてアル
ミニウム又はチタンからなる金属膜２４を設ける。２５
はこの金属膜２４の延長部分で、この延長部分２５と透
光性導電膜２２とは金属電極２６を介して圧接により電
気的に当接されている。BACKGROUND OF THE INVENTION A conventional electrical contact method of this type will be explained with reference to a perspective view of a solar cell shown in FIG. A transparent conductive film 22 made of indium oxide or tin oxide is formed as a first electrode on the upper surface of a transparent insulating substrate 21, a metal electrode 26 is provided on top of the metal electrode 26, and the metal electrode 26 is made of amorphous Si as a main component. Semiconductor film 2
3 are continuously formed, and a metal film 24 made of aluminum or titanium is further provided thereon as a second electrode. 25
is an extended portion of this metal film 24, and this extended portion 25 and the transparent conductive film 22 are electrically abutted by pressure contact via a metal electrode 26.
発明が解決しようとする問題点
このような従来の直列接続の場合、第１電極２２に金属
電極２６を介して金属膜２４の延長部分２５を圧接する
ことにより、アモルファスＳｉ半導体２３の直列接続は
これらの圧接部分を構成する２２゜２５．２６の各間を
唯単に圧接のみによる接続であるために、外部よりの衝
撃により、この圧接部３ベー／゛
分がずれ接続不良を招くという問題があった。Problems to be Solved by the Invention In the case of such a conventional series connection, the series connection of the amorphous Si semiconductors 23 is achieved by press-contacting the extended portion 25 of the metal film 24 to the first electrode 22 via the metal electrode 26. Since the connections between the 22°, 25, and 26 angles that make up these pressure welding parts are made solely by pressure welding, there is a problem in that external shocks can cause the pressure welding parts to shift by 3 bases per inch, resulting in poor connections. there were.
本発明は、第１電極と第２電極との重なり部分をレーザ
ー溶接することによりこれらの間の確実な電気的接続を
図ることを目的とするものである。An object of the present invention is to establish a reliable electrical connection between a first electrode and a second electrode by laser welding the overlapping portion of the electrodes.
問題点を解決するための手段
本発明はアモルファスＳｉ半導体を介して、透光性導電
膜よりなる第１電極と金属膜よりなる第２電極との重な
り部分に、レーザー照射し、これらの三要素よりなる合
金層を形成して太陽電池相互間を直列接続したものであ
る。Means for Solving the Problems The present invention irradiates a laser through an amorphous Si semiconductor to the overlapping portion of a first electrode made of a transparent conductive film and a second electrode made of a metal film, and removes these three elements. The solar cells are connected in series by forming an alloy layer consisting of the following.
作用
このように第２電極の金属膜とアモルファス８１半導体
と第１電極の透光性導電膜の重なり部分にレーザーを照
射し合金層とすることにより、外部よりのこの部分に対
する衝撃力に対しても、従来の圧接による電気的接続の
場合に生じたような電気的接続不良を起こすことは十分
に解決できる。In this way, by irradiating the overlapping part of the metal film of the second electrode, the amorphous 81 semiconductor, and the transparent conductive film of the first electrode with a laser to form an alloy layer, it is able to withstand external impact forces on this part. However, it is possible to sufficiently solve the problem of electrical connection failures that occur in the case of electrical connections by conventional pressure welding.
以下、本発明を実施例で詳述する。Hereinafter, the present invention will be explained in detail with reference to Examples.
実施例
第１図は本発明による太陽電池装置を示す図であって、
ａは平面図、ｂは断面図を示す。図において第１電極２
と第２電極４は、それぞれメタルマスクを用いて複数個
独立に形成する。第１電極２としては絶縁基板１上に透
光性導電膜として酸化インジウムや酸化錫などを電子ビ
ーム蒸着やスパッタ蒸着により約１０ｏｏ人の厚みに形
成する。Embodiment FIG. 1 is a diagram showing a solar cell device according to the present invention,
A shows a plan view, and b shows a cross-sectional view. In the figure, the first electrode 2
A plurality of the second electrodes 4 and 4 are formed independently using metal masks. The first electrode 2 is formed by forming indium oxide, tin oxide, or the like as a transparent conductive film on the insulating substrate 1 to a thickness of about 10 Å by electron beam evaporation or sputter evaporation.
第２電極４としてアルミニウムやチタンなどを電子ビー
ム蒸着やスパッタ蒸着により約数千人に形成する。第１
電極２上の非晶質半導体としてはアモルファスＳｉをプ
ラズマＣｖＤ法により順次ｐ型アモルファスＳｉ、ｉ型
アモルファスＳｉ 、 ｎ型アモルファスＳｉをそれぞ
れの膜厚が約１００Ａ。The second electrode 4 is made of aluminum, titanium, or the like to a thickness of about several thousand by electron beam evaporation or sputter evaporation. 1st
As the amorphous semiconductor on the electrode 2, amorphous Si was sequentially formed into p-type amorphous Si, i-type amorphous Si, and n-type amorphous Si by a plasma CVD method, each having a film thickness of about 100 Å.
約５０００人、約４００人となるよう形成する。The number of participants will be approximately 5,000 and approximately 400.
このアモルファスＳ１３は第１電極上で共通に連続して
形成する。第１電極２と互いに隣接する第２電極４との
アモルファスＳ１３を介しての端部での重なり部分５は
、波長１．０６６ミフロンＱスイツチ１周波数１０〜３
０ＫＨｚ、数十ミクロン径のスポット、平均出力数十ワ
ットのＹＡＧレーザーを照射することにより、第１電極
２．アモルファス／゛
ファスＳ１３．第２電極４０３層が溶着して、電気的に
直列状態に接続される。すなわちこれらの３層により、
数ミクロン幅の合金層をつくり電気的に確実な導通状態
がこの合金層により形成される。This amorphous S13 is commonly and continuously formed on the first electrode. The overlapping portion 5 at the end of the first electrode 2 and the mutually adjacent second electrode 4 via the amorphous S13 has a wavelength of 1.066 microfron Q switch 1 and a frequency of 10 to 3
The first electrode 2. Amorphous/゛Fus S13. The second electrode 403 layer is welded and electrically connected in series. In other words, with these three layers,
An alloy layer with a width of several microns is created, and a reliable electrical conduction state is formed by this alloy layer.
発明の詳細
な説明した如く本発明は、アモルファスＳｉ層を介して
第１電極端部と隣接する第２電極端部の重なり部をレー
ザー照射により溶着することで電気的に直列接続するこ
とができ、確実な太陽電池相互間の接続状態が保てると
いう利点がある。As described in detail, the present invention enables electrical series connection by welding the overlapping portion of a first electrode end and an adjacent second electrode end through laser irradiation via an amorphous Si layer. This has the advantage that a reliable connection between the solar cells can be maintained.
第１図ａは本発明における太陽電池装置を示す平面図、
同図すはその断面図、第２図は従来の太陽電池装置を示
す斜視構造図である。
１・・・・・絶縁基板、２ ・・第１電極、３・・・・
非晶質半導体、４・・・・・第２電極、５・・・・・・
アモルファスＳ１層を介した第１電極と第２電極との合
金部分。FIG. 1a is a plan view showing a solar cell device according to the present invention,
FIG. 2 is a sectional view thereof, and FIG. 2 is a perspective structural view showing a conventional solar cell device. 1... Insulating substrate, 2... First electrode, 3...
Amorphous semiconductor, 4...second electrode, 5...
An alloy portion of the first electrode and the second electrode with an amorphous S1 layer interposed therebetween.
Claims (1)
、前記第１電極上に非晶質半導体を連続して形成し、つ
いでこの連続した非晶質半導体上に前記第１電極と対応
する複数個の電気的に独立した第２電極を設けて第１、
第２電極により非晶質半導体を複数個に区画した太陽電
池装置の製造法であって、前記非晶質半導体を介して、
前記第１電極の端部と第２電極の端部の相重なる部分を
レーザー加工により接続し、個々の太陽電池が互いに電
気的に直列関係になるようにしたことを特徴とする太陽
電池装置の製造法。A plurality of electrically independent first electrodes are provided on an insulating substrate, an amorphous semiconductor is continuously formed on the first electrode, and then the first electrode and the first electrode are formed on the continuous amorphous semiconductor. a plurality of corresponding electrically independent second electrodes;
A method for manufacturing a solar cell device in which an amorphous semiconductor is divided into a plurality of parts by a second electrode, the method comprising:
A solar cell device characterized in that the overlapping portions of the ends of the first electrode and the ends of the second electrode are connected by laser processing so that the individual solar cells are electrically connected in series with each other. Manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60230155A JPS6289368A (en) | 1985-10-16 | 1985-10-16 | Manufacture of solar cell device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60230155A JPS6289368A (en) | 1985-10-16 | 1985-10-16 | Manufacture of solar cell device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6289368A true JPS6289368A (en) | 1987-04-23 |
Family
ID=16903454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60230155A Pending JPS6289368A (en) | 1985-10-16 | 1985-10-16 | Manufacture of solar cell device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6289368A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2639475A1 (en) * | 1988-11-18 | 1990-05-25 | Sanyo Electric Co | METHOD FOR MANUFACTURING A PHOTOVOLTAIC DEVICE |
| EP0422511A2 (en) * | 1989-10-07 | 1991-04-17 | Showa Shell Sekiyu Kabushiki Kaisha | Photovoltaic device and process for manufacturing the same |
-
1985
- 1985-10-16 JP JP60230155A patent/JPS6289368A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2639475A1 (en) * | 1988-11-18 | 1990-05-25 | Sanyo Electric Co | METHOD FOR MANUFACTURING A PHOTOVOLTAIC DEVICE |
| JPH02224278A (en) * | 1988-11-18 | 1990-09-06 | Sanyo Electric Co Ltd | Manufacture of photovoltaic device |
| US5041391A (en) * | 1988-11-18 | 1991-08-20 | Sanyo Electric Co., Ltd. | Method of manufacturing a photovoltaic device |
| EP0422511A2 (en) * | 1989-10-07 | 1991-04-17 | Showa Shell Sekiyu Kabushiki Kaisha | Photovoltaic device and process for manufacturing the same |
| JPH03124067A (en) * | 1989-10-07 | 1991-05-27 | Showa Shell Sekiyu Kk | Photovoltaic device and its manufacture |
| EP0422511A3 (en) * | 1989-10-07 | 1991-07-31 | Showa Shell Sekiyu Kabushiki Kaisha | Photovoltaic device and process for manufacturing the same |
| US5133809A (en) * | 1989-10-07 | 1992-07-28 | Showa Shell Sekiyu K.K. | Photovoltaic device and process for manufacturing the same |
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